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    BA 10 G 8A Price and Stock

    Micron Technology Inc MT29F2G08ABAEAH4:E

    NAND Flash SLC 2G 256MX8 FBGA M69A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MT29F2G08ABAEAH4:E 10,810
    • 1 $3.47
    • 10 $3.07
    • 100 $2.75
    • 1000 $2.51
    • 10000 $2.41
    		Buy Now

    Micron Technology Inc MT29F4G08ABADAH4-IT:D

    NAND Flash SLC 4G 512MX8 FBGA IT M60A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MT29F4G08ABADAH4-IT:D 9,130
    • 1 $5.35
    • 10 $4.27
    • 100 $4.25
    • 1000 $3.71
    • 10000 $3.71
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    TAIYO YUDEN MBASG168AB7105KTNA01

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 35V 1uF X7R 0603 10%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MBASG168AB7105KTNA01 7,784
    • 1 $0.15
    • 10 $0.097
    • 100 $0.05
    • 1000 $0.032
    • 10000 $0.024
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    Micron Technology Inc MT29F4G08ABADAWP:D TR

    NAND Flash SLC 4G 512MX8 TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MT29F4G08ABADAWP:D TR 4,888
    • 1 $5.05
    • 10 $4.45
    • 100 $4
    • 1000 $3.59
    • 10000 $3.59
    		Buy Now

    Micron Technology Inc MT29F2G08ABAEAH4:E TR

    NAND Flash SLC 2G 256MX8 FBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MT29F2G08ABAEAH4:E TR 3,466
    • 1 $3.3
    • 10 $2.86
    • 100 $2.86
    • 1000 $2.57
    • 10000 $2.43
    		Buy Now
    Find more BA 10 G 8A price and stock on Findchips.com

    BA 10 G 8A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    25C20

    Abstract: C541U A65 SMD BDP 281 od3 tube datasheet PSB 21150 F pin rd-58 S44 SMD sei smd resistors smd code aux n ba
    Text: D at a S h ee t, D S 1, O ct . 20 01 SIUC-BA S in gl e C hi p I S D N U S B Co nt ro ll er - Basic PSB 2155 Version 1.3 Wired C o m m u n i ca t i o n s N e v e r s t o p t h i n k i n g . Edition 2001-10-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53,


    Original     		PDF D-81541 25C20 C541U A65 SMD BDP 281 od3 tube datasheet PSB 21150 F pin rd-58 S44 SMD sei smd resistors smd code aux n ba

    78H68

    Abstract: sj 7ba ba 10 g 8a acgf
    Text: <9.%$7%$5!M <4968<CB""!$9MTDO"=O@LPHPQMO  31'6&5 6/ / $3: 2D@QROD *  ;4 A A 8? '*3 +* M !A ;4 A 68@ 8A F@ B78 *<K"^]# +/. \ B: < 6 ( 8H8? '< +*(- 8 H'LG,0-'- N  BC8D4 F< A : F8@ C8D4 FGD8  H4 ? 4 A 6;8 D4 F87(! 72 S `PbTS/24; =97<&8>77455=>6:<9?= 310,()*.&)&)(


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    8h bm

    Abstract: acgf 4a68 6BAA86F bc8d
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    E78E

    Abstract: 6GDG ABV MARKING marking 4f6 bg marking FG-46 b787
    Text: 3B=* +@6 # <?5" # & E $  & 9 -88& 53: -8 '=-: >5>?;= $ =;0@/?& @9 9 -=D 7MI[\YMZ 9I S  G4? * 6;4AA8? ' 9I"^]#$\Pf S  A;4A68@ 8AF@ B78 S & B: <6 ?8H8?   / D4F87 +( K ) =I / ),( \" ) =I   / *+( $9 %)&- 6 S  -  CDBF86F87 F=%JIEF%. S + G4?<9<87 466BD7<A:    +


    Original     		PDF 466BD E78E 6GDG ABV MARKING marking 4f6 bg marking FG-46 b787

    marking 8d

    Abstract: marking 8E 8d4f marking IBW 8D marking MARKING 3B
    Text: 3B=*'/@6 # <?5" # & E $  & 9 -8 8& 53: -8'=-: >5>?;= $ =;0@/?& @9 9 -=D 7MI[\YMZ 9I S  G4? * 6;4AA8? ' 9I"^]#$\Pf S  A;4A68@ 8AF@ B78 S & B: <6 ?8H8?   / D4F87 %+ K ) =I / 0( \" ) =I   / )+( $9 %*&( 6 S  -  CDBF86F87 F=%JIEF%. S + G4?<9<87 466BD7<A: FB    +


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    78H68

    Abstract: marking 5U MARKING IBW marking A9 62b21
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    BD74

    Abstract: No abstract text available
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    bd 9h

    Abstract: ga6f
    Text: 3CB0 @ c %!$"#% ' : .99' 64;.9 >.;?6?@<> $ ><1 A0@' A: : .>E 7NJ\]ZN[ ) 9H S *  ;4AA8? %*-( J ) " %(&), 6 ' 9H"^]#$\Pf S  A;4A68@ 8AF@ B78 & B: <6 ?8H8? $9 S  H4?4A6;8 D4F87 S * 5 9D88 ?847 C?4F<A:  + B" , 6B@ C?<4AF F=%H8-1 S BBFCD<AF6B@ C4F<5?8 FB , ) - 


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: P0.A<I8EF4?0"ACHG03080D/4 P0 BJ8E046GBE0BEE86G870 P0?B4G<A:07=HFG45?80BHEG;0 HGCHG P0%BJ0)EB9<?80C.0!<:; *<0&5/*70 *,1*276010F440-(&7-326 46GBEL0HGB@4G<BA -8FG020&84FHE8@8AG %<:;G0"A7HFGE<4?0DH<C@8AG 30*0,8E<8F B00GB0CB00 *H470(HGCHG0)BJ8E0,HCC?<8F0


    Original     		PDF ACHG03 46GBE0 BEE86G870 HFG45 276010F440-( 46GBEL0 -8FG020 84FHE8 B00GB0C 84GHE8F04A70

    M5M4V16S30DTP

    Abstract: M5M4V16S40 M5M4V16s30
    Text: SDRAM Rev. 1.03E . «* „ 16M Synchronous DRAM „„ M5M4V1 6S20DTP-7,-8A,-8,-1 0 (2-BANK x 2097152-W ORD x 4-BIT) P relim inary M 5 M 4 V 1 6 S 3 0 D T P - 7 , - 8 A , - 8 , - 1 0 (2-BANK x 1048576-WORD x 8-BIT) M IT S U B IS H I L S Is M 5 M 4 V 1 6 S 4 0 D T P - 7 , - 8 A , - 8 , - 1 0 (2 - b a n k x 5 2 4 2 8 8 - w o r d x 16 -b it)


    OCR Scan     		PDF 6S20DTP-7 097152-W 1048576-WORD M5M4V16S20DTP 152-word M5M4V16S30DTP 576-word M5M4V16S40DTP 288-word 16-bit. M5M4V16S40 M5M4V16s30

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Speo. M it s u b is h i lsis Some contents are subject to change w ithout notice. MH2S64DKD -7,-8A,-8,-10 _ 134217728-BIT 2097152-WORD BY 64-Bm SvnchronousDR AM DESCRIPTION The MH2S64DKD is 2097152-word by 64-bit


    OCR Scan     		PDF MH2S64DKD 134217728-BIT 2097152-WORD 64-Bm 64-bit MIT-DS-0173-0

    AD-009

    Abstract: ta1282
    Text: MITSUBISHI LSIs Preliminary I Some contents are subject to change w ithout notice. MH2S72DMD-7,-8A,-8,-10 150994944-BIT 2097152-WORD BY 72-BIT SynchronousDRAM DESCRIPTION The MH2S72DLD is 2097152-word by 72-bit Synchronous DRAM module. This consists of nine


    OCR Scan     		PDF MH2S72DMD-7 150994944-BIT 2097152-WORD 72-BIT MH2S72DLD 100MHz 125MHz AD-009 ta1282

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs MH32S72AFA -8A,-8,-10 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION The MH32S72AFA is 33554432 - word x 72-bit Synchronous DRAM stacked structural module. This consist


    OCR Scan     		PDF MH32S72AFA 104-BIT 432-WORD 72-BIT MIT-DS-0148-0

    8A550

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs Some contents are subject to change without notice. MH4S72AAPG -8A,-8,-10 301989888-BIT 4194304 - WORD BY 72-BIT SynchronousDRAM DESCRIPTION The MH4S72AAPG is 4194304 - word by 72-bit Synchronous DRAM module. This consists of five industry standard 4Mx16 Synchronous DRAMs in


    OCR Scan     		PDF MH4S72AAPG 301989888-BIT 72-BIT 4Mx16 85pin 94pin 10pin 125MHz 8A550

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs Some contents are subject to change without notice. MH4S64AAPG -8A,-8,-10 268435456-BIT 4194304 - WORD BY 64-BIT SynchronousDRAM DESCRIPTION The MH4S64AAPG is 4194304 - word by 64-bit Synchronous DRAM module. This consists of four industry standard 4Mx16 Synchronous DRAMs in


    OCR Scan     		PDF MH4S64AAPG 268435456-BIT 64-BIT 4Mx16 125MHz 100MHz

    Untitled

    Abstract: No abstract text available
    Text: 128M Synchronous D RA M SDRAM Rev. 0.60E Oct. '98 M2V28S20TP-7,-8Al-8,-10 M2V28S30TP-7,-8A,-8,-10 M2V28S40TP-7,-8A,-8,-10 Preliminary M ITSUBISHI LS Is PRELIM INARY (4-BANK X 8,388,608-WORD x 4-BIT) (4-BANK X 4,194,304-WORD x 8-BIT) (4-BANKx 2,097,152-WORD x 16-BIT)


    OCR Scan     		PDF M2V28S20TP-7 M2V28S30TP-7 M2V28S40TP-7 608-WORD 304-WORD 152-WORD 16-BIT) 2V28S20TP M2V28S30TP

    8L-10L

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs SDRAM Rev.1.3 Mar'98 M5M4V64S40ATP-8A,-8L,-8, -10L, -10 64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM Some of contents are subject to change without notice. PIN CONFIGURATION (TOP VIEW) DESCRIPTION The M5M4V64S40ATP is a 4-bank x 1048576-word x 16-bit


    OCR Scan     		PDF M5M4V64S40ATP-8A 1048576-WORD 16-BIT) M5M4V64S40ATP 16-bit 125MHz, 51ndersea 8L-10L

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs MH4S72DFA -7,-8A,-8,-10 301,989,888-BIT 4,194,304-WORD BY 72-BIT Synchronous DYNAMIC RAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION The MH4S72DFA is 4194304 - word x 72-bit Synchronous DRAM stacked structural module. This consist


    OCR Scan     		PDF MH4S72DFA 888-BIT 304-WORD 72-BIT 72-bit 100MHz 125MHz 100MHzC

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs MH4S72DMD-7,-8A,-8,-10 301989888-BIT 4194304-WORD BY 72-BIT SynchronousDRAM DESCRIPTION The MH4S72DMD is 4194304-word by 72-bit Synchronous DRAM module. This consists of eighteen industry standard 2Mx8 Synchronous DRAMs in TSOP and one industory standard


    OCR Scan     		PDF MH4S72DMD-7 301989888-BIT 4194304-WORD 72-BIT MH4S72DMD 72-bit 100MHz 125MHz

    Untitled

    Abstract: No abstract text available
    Text: 2Q H RHRP870, RHRP880, RHRP890, RHRP8100 A R R IS S E M I C O N D U C T O R 8A, 700V - 1000V Hyperfast Diodes April 1995 Package Features • Hyperfast with Soft Recovery. <60ns JEDEC T0220AC • Operating Temperature. +175°C


    OCR Scan     		PDF RHRP870, RHRP880, RHRP890, RHRP8100 T0220AC RHRP890 TA49060)

    9912E

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs Some contents are subject to change without notice. MH4S64DMD-7,-8A,-8,-10 268435456-BIT 4194304-WQRD BY 64-BIT SynchronousDRAM DESCRIPTION The MH4S64DMD is 4194304-word by 64-bit Synchronous DRAM module. This consists of sixteen industry standard 2Mx8 Synchronous DRAMs in


    OCR Scan     		PDF MH4S64DMD-7 268435456-BIT 4194304-WQRD 64-BIT MH4S64DMD 4194304-word 100MHz 125MHz 9912E

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Speo. MITSUBISHI LSIs Some contents are subject to change w ithout notice. MH4S72AAPG -8A,-8,-10 301989888-BIT 4194304 - WORD BY 72-BIT SynchronousDRAM DESCRIPTION The MH4S72AAPG is 4194304 - word by 72-bit Synchronous DRAM module. This consists of five


    OCR Scan     		PDF MH4S72AAPG 301989888-BIT 72-BIT 72-bit 125MHz 100MHz