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    BU1508DX

    Abstract: SOT166
    Text: N AMFR PHILIPS/DISCRETE b^E 3> • bbSB^l DÜ2Ô333 33T ■ APX Philips Semiconductors Product specification Silicon diffused power transistor BU1508DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated


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    PDF BU1508DX OT186A; OT186 BU1508DX SOT166

    BLV103

    Abstract: MRA363
    Text: bb53131 Philips Semiconductors DOSASSE 5 bT M i APX Produc^pecification BLV103 UHF power transistor N AMER P H I L I P S / D I S C R E T E b'ìE D QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit. FEATURES • Internal matching for an optimum


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    PDF BLV103 OT171 OT171 MRA363 BLV103 MRA363