Untitled
Abstract: No abstract text available
Text: T> m b2E N E C bM27SHS 0Q374Ö3 EL ECTRONI CS T71 W N E C E LASER DIODE INC / N D L5084 1 3 1 0 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE D E SC RIPTIO N N D L 5 0 8 4 is a 1 3 1 0 nm laser diode especially designed fo r optic a l data com m unications. The M esa-type DC-PBH Double
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bM27SHS
0Q374
L5084
b427525
DQ37M
NDL5084
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NL1031
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿ P D 4 8 8 3 0 L 8M-BIT Rambus DRAM 1M-WORD X 8-BIT X 1-BANK Description The 8-Megabit Ram bus DRAM RD R A M ™ is an extremely-high-speed C M O S DRAM organized as 1M w ords by 8 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Ram bus Signaling
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IPD48830L
P32G6-65A
NL1031
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Untitled
Abstract: No abstract text available
Text: CHAPTER 12 INSTRUCTIONS Table 12-1 Operand Type Identifier reg,reg' reg8 regi 6 mem mem 8 mem 16 mem32 dmem imm imm3 inun4 imm8 imml6 acc sreg src-table src-block dst-block near-proc far-proc near-label short-label far-label Description 8 - or 16-bit general-purpose register
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mem32
16-bit
32-bit
256-byte
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AD427
Abstract: No abstract text available
Text: b ME7 SES 004E775 T17 «NECE NEC NEC Electronics Inc. #iPD78002Y Family pPD78001 BY/002BY/P014Y 8-Bit, K-Series Microcontrollers General Purpose W ith I2C Bus Preliminary_ September 1993 Description Features The ¿(PD78001 BY, ¿/PD78002BY, and pPD78P014Y* are
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004E775
iPD78002Y
pPD78001
BY/002BY/P014Y)
PD78001
/PD78002BY,
pPD78P014Y*
/JPD78002Y
pPD78002
JPD78P014Y
AD427
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Untitled
Abstract: No abstract text available
Text: A / f 6427525 N E C ELECTRONICS. INC E Y * 09m o t l TE DE I b M E ? S H S T - Wt f l DDD^m D | NEC Electronics Inc. K NEPOC SERIES Absolute Maximum Ratings D escription Ta = +25°C_ 40mA Forward Current, Ip 5V Reverse Voltage, V r Storage Temperature, TSTG
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SY405D
SY405T
100mW
405D/luminous
SY405T.
bM27SHS
SY405D/T
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