Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    B772 PNP Search Results

    B772 PNP Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73128RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency PNP Transistor Array Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096EHVX Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    B772 PNP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    B772Y

    Abstract: B772-Y B772-GR B772O
    Text: MCC TM Micro Commercial Components B772-R B772-O B772-Y B772-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Capable of 1.25Watts of Power Dissipation. Collector-current 3.0A


    Original     		PDF B772-R B772-O B772-Y B772-GR 25Watts -55OC -10mAdc, -100uAdc, B772Y B772-GR B772O

    br b772

    Abstract: TRANSISTOR b772 TRANSISTOR br b772 b772 p B772 b772 transistor pnp b772 B772 equivalent b772 pnp TRANSISTOR b772 br
    Text: B772 B772 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM: 625 mW (Tamb=25℃) 2. COLLECTOR Collector current ICM: -3 A Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original     		PDF -100mA 10MHz br b772 TRANSISTOR b772 TRANSISTOR br b772 b772 p B772 b772 transistor pnp b772 B772 equivalent b772 pnp TRANSISTOR b772 br

    b772

    Abstract: TRANSISTOR b772
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors B772 TRANSISTOR PNP TO-252 FEATURES •Low speed switching MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF O-252 O-252 10MHz b772 TRANSISTOR b772

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors TO-251 B772 TRANSISTOR PNP FEATURES 1. EMITTER Low Speed Switching 2. COLLECTOR 3 BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit


    Original     		PDF O-251 O-251 -10mA 10MHz

    B772 TO-252

    Abstract: br b772 TRANSISTOR b772 B772 TRANSISTOR br b772 B772 TRANSISTOR b772 pnp B772 datasheet B772 equivalent pnp b772
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors TO-252 B772 TRANSISTOR PNP FEATURES 1. BASE •Low speed switching 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units


    Original     		PDF O-252 O-252 -100A 10MHz B772 TO-252 br b772 TRANSISTOR b772 B772 TRANSISTOR br b772 B772 TRANSISTOR b772 pnp B772 datasheet B772 equivalent pnp b772

    TO-251 B772

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors B772 TO-251 TRANSISTOR PNP FEATURES 1. EMITTER •Low speed switching 2. COLLECTOR 3 BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units


    Original     		PDF O-251 O-251 10MHz TO-251 B772

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors B772 TO- 126C TRANSISTOR（ PNP ） FEATURES •Low Speed Switching 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS* Ta=25 ℃ unless otherwise noted Symbol Parameter


    Original     		PDF O-126C -100mA 10MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors B772 TO-252 TRANSISTOR PNP FEATURES 1. BASE Low Speed Switching 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit


    Original     		PDF O-252 O-252 -10mA 10MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TO-126 B772 TRANSISTOR PNP FEATURES 1. EMITTER Low speed switching 2. COLLECTOR Value Units VCBO Collector-Base Voltage Parameter -40 V VCEO Collector-Emitter Voltage


    Original     		PDF O-126 O-126

    TO-251 B772

    Abstract: br b772 TRANSISTOR b772 B772 TRANSISTOR br b772 B772 equivalent B772 PNP b772 transistor transistors b772
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors TO-251 B772 TRANSISTOR PNP FEATURES 1. EMITTER •Low speed switching 2. COLLECTOR 3 BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units


    Original     		PDF O-251 O-251 -100A 10MHz TO-251 B772 br b772 TRANSISTOR b772 B772 TRANSISTOR br b772 B772 equivalent B772 PNP b772 transistor transistors b772

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors TO-251 B772 TRANSISTOR PNP FEATURES 1. EMITTER •Low speed switching 2. COLLECTOR 3 BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units


    Original     		PDF O-251 O-251 10MHz

    b772 p

    Abstract: C01A TRANSISTOR B772 sot-89 br b772 TRANSISTOR b772 transistors b772 b772 pnp b772 B772 TRANSISTOR SOT-89
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors B772 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLETOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current -3 A ICM: Collector-base voltage


    Original     		PDF OT-89 OT-89 -100mA 10MHz b772 p C01A TRANSISTOR B772 sot-89 br b772 TRANSISTOR b772 transistors b772 b772 pnp b772 B772 TRANSISTOR SOT-89

    b772

    Abstract: BR B772
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors B772 TRANSISTOR PNP TO-252 FEATURES •Low speed switching MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF O-252 O-252 10MHz b772 BR B772

    TRANSISTOR b772

    Abstract: B772 equivalent B772 B772 PNP pnp b772 B772 datasheet b772 transistor transistor PNP b772
    Text: PNP TRANSISTOR B772 3.0A z z z AF OUTPUT AMPLIFIER FOR DC-DC CONVERTER FOR CAMERA MOTOR DRIVER MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETERS SYMBOL Collector-Emitter Breakdown Voltage BVceo Collector-Base Breakdown Voltage BVcbo Emitter-Base Breakdown Voltage


    Original     		PDF

    b772

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR（ PNP ） TO—126 FEATURES •Low speed switching 1. EMITTER 2.COLLECTOR 3.BASE 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter


    Original     		PDF O-126 specified-100 -100mA 10MHz b772

    TRANSISTOR b772

    Abstract: br b772 B772 PNP B772 TRANSISTOR br b772 TO-251 B772 R/SmD transistor b772
    Text: B772 PNP TO-251 Transistor TO-251 1. EMITTER 2. COLLECTOR 3 BASE 1 2 3 Features Low speed switching MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO


    Original     		PDF O-251 O-251 -100A -10mA -100A 10MHz TRANSISTOR b772 br b772 B772 PNP B772 TRANSISTOR br b772 TO-251 B772 R/SmD transistor b772

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TO-126 B772 TRANSISTOR PNP FEATURES 1. EMITTER Low Speed Switching 2. COLLECTOR 3 BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Value Unit VCBO Collector-Base Voltage


    Original     		PDF O-126 O-126 -10mA 10MHz

    TRANSISTOR b772 p

    Abstract: No abstract text available
    Text: B772 YOUDA TRANSISTOR Si PNP TRANSISTOR—B772 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= -40V *Collector current up to -3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage


    Original     		PDF

    B772 PNP

    Abstract: b772 p B772 SPECIFICATION br b772 B772 B772 equivalent B772 C S H B772 B772 E pnp b772
    Text: B772 PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-126 Features 2.7±0.2 7.6±0.2 * Low speed switching 1.3±0.2 4.0±0.1 10.8±0.2 O 3.1± 0.1 MAXIMUM RATINGS* TA=25 C unless otherwise noted


    Original     		PDF O-126 01-Jun-2004 B772 PNP b772 p B772 SPECIFICATION br b772 B772 B772 equivalent B772 C S H B772 B772 E pnp b772

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR（ PNP ） TO—126 FEATURES Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : -3 A Collector-base voltage V BR CBO : -40 V Operating and storage junction temperature range


    Original     		PDF O-126 290TYP 090TYP

    B772

    Abstract: TRANSISTOR br b772 TRANSISTOR B772 sot-89
    Text: SOT-89 Plastic-Encapsulate Transistors B772 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLETOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current -3 A ICM: Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF OT-89 OT-89 -100mA 10MHz B772 TRANSISTOR br b772 TRANSISTOR B772 sot-89

    br b772

    Abstract: b772 transistor TRANSISTOR br b772 b772 pnp b772 TRANSISTOR b772 transistors b772 b772 pnp
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR PNP TO-126 FEATURES Power dissipation 1. EMITTER 1.25 PCM: W (Tamb=25℃) 2. COLLECTOR Collector current -3 A ICM: Collector-base voltage -40 V V(BR)CBO:


    Original     		PDF O-126 O-126 -100mA 10MHz br b772 b772 transistor TRANSISTOR br b772 b772 pnp b772 TRANSISTOR b772 transistors b772 b772 pnp

    b772 p

    Abstract: BR B772
    Text: TO-126C Plastic-Encapsulate Transistors B772 TRANSISTOR（ PNP ） TO—126C FEATURES •Low speed switching 1. EMITTER 2.COLLECTOR 3.BASE 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO


    Original     		PDF O-126C 10MHz b772 p BR B772

    b772 p

    Abstract: br b772 TRANSISTOR b772 B772 transistors b772 pnp b772 b772 transistor b772 pnp TRANSISTOR br b772 DSA0026811
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors B772 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM: 625 mW (Tamb=25℃) 2. COLLECTOR Collector current -3 A ICM: Collector-base voltage -40 V V(BR)CBO:


    Original     		PDF -100mA 10MHz b772 p br b772 TRANSISTOR b772 B772 transistors b772 pnp b772 b772 transistor b772 pnp TRANSISTOR br b772 DSA0026811