B75N75
Abstract: PJB75N75
Text: B75N75 75V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=11mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Converters and Power Motor Controls • Fully Characterized Avalanche Voltage and Current
|
Original
|
PDF
|
PJB75N75
2002/95/EC
O-263
MIL-STD-750
B75N75
B75N75
PJB75N75
|
Untitled
Abstract: No abstract text available
Text: B75N75 75V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=11mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Converters and Power Motor Controls • Fully Characterized Avalanche Voltage and Current
|
Original
|
PDF
|
PJB75N75
2002/95/EC
O-263
MIL-STD-750
B75N75
|
B75N75
Abstract: PJB75N75
Text: B75N75 75V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@30A=11mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Converters and Power Motor Controls • Fully Characterized Avalanche Voltage and Current
|
Original
|
PDF
|
PJB75N75
2002/95/EC
O-263
MIL-STD-750
B75N75
B75N75
PJB75N75
|