Contextual Info: O K I Semiconductor MSM514256B/BL 262,144-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514256B/BL is a new generation dynamic RAM organized as 262,144-word x 4-bit. The technology used to fabricate the MSM514256B/BL is OKI's CMOS silicon gate process technology.

met esso

Contextual Info: O K I Semiconductor MSC2327B-XXYS8/DS8 262,144-Word by 32-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC2327B-xxYS8/ DS8 is a fully decoded 262,144-word x 32-bit CMOS Dynamic Random Access Memory M odule composed of eight 1-Mb DRAMs in SOJ MSM514256B packages mounted with eight

OA71

Abstract: A7137
Contextual Info: O K I Semiconductor MSC23T/DV4720A-xxBS 18 4,194,304-Word x 72-Bit DRA M M O DU LE : FAST PAGE M O DE TYPE DESCRIPTION The OKI MSC23T/ DV4720A-xxBS 18 is a fully decoded 4,194,304-word x 72-bit CMOS Dynamic Random Access Memory Module composed of eighteen 16-Mb DRAMs 4M x 4 in TSOP or SOJ

transistor W2W

Abstract: w2w transistor oki Package SOJ 32-PIN A204 MSM51V17900-70 MSM51V17900-80 uras 14
Contextual Info: O K I Semiconductor MSM51V17900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM51VI7900 is OKI's CMOS silicon gate process technology.