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Abstract: No abstract text available
Text: O K I Semiconductor MSM514256B/BL 262,144-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514256B/BL is a new generation dynamic RAM organized as 262,144-word x 4-bit. The technology used to fabricate the MSM514256B/BL is OKI's CMOS silicon gate process technology.
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MSM514256B/BL
144-Word
MSM514256B/BL
cycles/64ms
2424G
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met esso
Abstract: No abstract text available
Text: O K I Semiconductor MSC2327B-XXYS8/DS8 262,144-Word by 32-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC2327B-xxYS8/ DS8 is a fully decoded 262,144-word x 32-bit CMOS Dynamic Random Access Memory M odule composed of eight 1-Mb DRAMs in SOJ MSM514256B packages mounted with eight
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MSC2327B-XXYS8/DS8
144-Word
32-Bit
MSC2327B-xxYS8/DS8
MSM514256B)
72-pin
met esso
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OA71
Abstract: A7137
Text: O K I Semiconductor MSC23T/DV4720A-xxBS 18 4,194,304-Word x 72-Bit DRA M M O DU LE : FAST PAGE M O DE TYPE DESCRIPTION The OKI MSC23T/ DV4720A-xxBS 18 is a fully decoded 4,194,304-word x 72-bit CMOS Dynamic Random Access Memory Module composed of eighteen 16-Mb DRAMs 4M x 4 in TSOP or SOJ
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MSC23T/PV4720A-XXBS18
304-Word
72-Bit
MSC23T/DV4720A-xxBS
16-Mb
168-pin
72-bit
OA71
A7137
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transistor W2W
Abstract: w2w transistor oki Package SOJ 32-PIN A204 MSM51V17900-70 MSM51V17900-80 uras 14
Text: O K I Semiconductor MSM51V17900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM51VI7900 is OKI's CMOS silicon gate process technology.
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MSM51V17900_
152-Word
MSM51V17900
MSM51VI7900
cycles/32ms
32PIN
SOJ32-P-4QO
42PIN
transistor W2W
w2w transistor
oki Package SOJ
32-PIN
A204
MSM51V17900-70
MSM51V17900-80
uras 14
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