B54 MARKING Search Results

B54 MARKING Result Highlights (5)

Part	Manufacturer	Description
MG8097/B	Rochester Electronics LLC	8097 - Math Coprocessor - Dual marked (8506301ZA)
5490/BCA	Rochester Electronics LLC	5490 - Decade Counter - Dual marked (M38510/01307BCA)
5405/BCA	Rochester Electronics LLC	5405 - Gate - Dual marked (M38510/00108BCA)
54AC20/SDA-R	Rochester Electronics LLC	54AC20/SDA-R - Dual marked (M38510R75003SDA)
UHD503R/883	Rochester Electronics LLC	UHD503R/883 - Dual marked (5962-8855101CA)

B54 MARKING Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: MBRS540T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay	Original	MBRS540T3 MBRS540T3/D	PDF
Untitled Abstract: No abstract text available Text: MBRS540T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay	Original	MBRS540T3 MBRS540T3/D	PDF
CJ1H-CPU65H Abstract: CJ1G-CPU42H CJ1G-CPU45H CJ1M-CPU22 CJ1G-CPU43H CJ1M-CPU12 CJ1W-IC101 CJ1G-CPU44H CJ1M-CPU13 cj1w-oc211 Text: CJ1 SERIES Contents Smallest, Most Powerful Solution for Tomorrow’s Advanced Production Systems We shrank our most powerful programmable controller by 40% to fit industry’s most space-confined cabinets. All of Omron’s outstanding performance was retained in the process: That includes the mix of standard and special I/O	Original	B-108 CJ1G-CPU45H, CJ1H-CPU65H CJ1H-CPU66H CJ1G-CPU42H CJ1G-CPU43H CJ1G-CPU44H CJ1G-CPU45H CJ1M-CPU22 CJ1M-CPU12 CJ1W-IC101 CJ1M-CPU13 cj1w-oc211	PDF
TESDV5V0 Abstract: No abstract text available Text: TESDV5V0A Steering Diode Structure ESD Protection Array Small Signal Diode SOT-363 Features Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) Meet IEC61000-4-4 (EFT) rating. 40A (5/50 s) Protects four high speed I/O lines Working Voltage : 5V Pb free version, RoHS compliant, and Halogen free	Original	OT-363 IEC61000-4-2 IEC61000-4-4 OT-363 MIL-STD-202, C/10s TESDV5V0	PDF
MARKING CODE a11 sot363 Abstract: POWER SUPPLY BOARD 94V Text: TESDV5V0A Steering Diode Structure ESD Protection Array Small Signal Diode SOT-363 Features Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) Meet IEC61000-4-4 (EFT) rating. 40A (5/50ήs) Protects four high speed I/O lines Working Voltage : 5V	Original	OT-363 IEC61000-4-2 IEC61000-4-4 5/50s) OT-363 MIL-STD-202, C/10s MARKING CODE a11 sot363 POWER SUPPLY BOARD 94V	PDF
B1C DIODE Abstract: IPB039N10N3 marking 1c marking a5 4r diode Text: IPB039N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C & V 9H ( J R 9H"[Z#$YMc +&1 Y" I9 ).( 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH	Original	IPB039N10N3 B1C DIODE marking 1c marking a5 4r diode	PDF
Untitled Abstract: No abstract text available Text: IPB039N10N3 G 3 Power-Transistor Product Summary Features P฀' 381>>5<฀>?A=1<฀<5E5< P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ & V 9H ( J R 9H"[Z#$YMc +&1 Y I9 ).( 6 P฀.5AH฀<?F฀?> A5B9BC1>35฀R 9H"[Z# P฀"978฀3DAA5>C฀31@129<9CH	Original	IPB039N10N3 381A75à C1A75Cà 931C9? C85AF9B5à	PDF
Untitled Abstract: No abstract text available Text: IPB025N10N3 G 3 Power-Transistor Product Summary Features P฀' 381>>5<฀>?A=1<฀<5E5< P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ & V 9H ( J R 9H"[Z#$YMc *&- Y I9 )0( 6 P฀GCA5=5<H฀<?F฀?> A5B9BC1>35฀R 9H"[Z# P฀"978฀3DAA5>C฀31@129<9CH	Original	IPB025N10N3 381A75à C1A75Cà 931C9? C85AF9B5à	PDF
IPA105N15N3 Abstract: IPA105N15N 81a diode Text: IPA105N15N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C & V 9H -( J R , ? >=1G )(&- Y" +/ I9 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z# P S ? @5A1C9>7 C5=@5A1CDA5	Original	IPA105N15N3 IPA105N15N 81a diode	PDF
IPB025N10N3 Abstract: IPB025 b1c diode marking a5 4r diode marking a5 4r diode b1c Text: IPB025N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C & V 9H ( J R 9H"[Z#$YMc *&- Y" I9 )0( 6 P GCA5=5<H <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH	Original	IPB025N10N3 IPB025 b1c diode marking a5 4r diode marking a5 4r diode b1c	PDF
Untitled Abstract: No abstract text available Text: IPA105N15N3 G TM 3 Power-Transistor Product Summary Features P฀' 381>>5<฀>?A=1<฀<5E5< P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ & V 9H -( J R ,?>=1G฀ )(&- Y I9 +/ 6 P฀.5AH฀<?F฀?> A5B9BC1>35฀R 9H"[Z# P฀ ฀S฀?@5A1C9>7฀C5=@5A1CDA5	Original	IPA105N15N3 381A75à C1A75Cà 931C9? C85AF9B5à	PDF
65A3 Abstract: 5E DIODE marking c-9 Text: IPB037N06N3 G Id\Q IPI040N06N3 G IPP040N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H P 6? ABH>3 A53 C96931C9? > 4A9E5B1>4 43 43 ,& , R , ? >=1G, & P G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C & I9 P ' 3 81>>5< >? A=1<<5E5<	Original	IPB037N06N3 IPI040N06N3 IPP040N06N3 65A3 5E DIODE marking c-9	PDF
Untitled Abstract: No abstract text available Text: Product specification 2SB736A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features High DC Current Gain: hFE = 200 TYP. VCE = -1.0 V, IC = -50 mA 1 0.55 Complementary to 2SD780A. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Micro package. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1	Original	2SB736A OT-23 2SD780A.	PDF
B52 transistor Abstract: MARKING B52 b53 SMD transistor b54 2SB736A B53 transistor PT-200 2SD780A b54 marking B52 MARKING Text: Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SB736A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features High DC Current Gain: hFE = 200 TYP. VCE = -1.0 V, IC = -50 mA 1 0.55 Complementary to 2SD780A. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Micro package.	Original	2SB736A OT-23 2SD780A. B52 transistor MARKING B52 b53 SMD transistor b54 2SB736A B53 transistor PT-200 2SD780A b54 marking B52 MARKING	PDF

65a3 Abstract: be5a IPB025N10N3G V9910 95E-9 Text: IPB025N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C & V 9H ( J R 9H"[Z#$YMc *&- Y" I9 )0( 6 P GCA5=5<H <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH	Original	IPB025N10N3 726-IPB025N10N3G 65a3 be5a IPB025N10N3G V9910 95E-9	PDF
Untitled Abstract: No abstract text available Text: IPB090N06N3 G IPP093N06N3 G Id\Q 3 Power-Transistor Product Summary Features P฀6?A฀BH>3 ฀A53C96931C9?>฀4A9E5B฀1>4฀43 43฀,& , P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ & V 9H .( J R ,?>=1G฀,& 1 Y I9 -(	Original	IPB090N06N3 IPP093N06N3 381A75à A53C96931C9? A1C54 C1A75Cà 931C9? C85AF9B5à	PDF
Untitled Abstract: No abstract text available Text: IPB037N06N3 G Id\Q IPI040N06N3 G IPP040N06N3 G 3 Power-Transistor Product Summary Features V 9H . J P฀6?A฀BH>3 ฀A53C96931C9?>฀4A9E5B฀1>4฀43 43฀,& , R ,?>=1G฀,& +&/ Y P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ (&	Original	IPB037N06N3 IPI040N06N3 IPP040N06N3 A53C96931C9? 381A75à A1C54 C1A75Cà 931C9?	PDF
Untitled Abstract: No abstract text available Text: International k R ectifier HEXFET® Power MOSFET 4655452 0015b04 b54 • INR PD-9.618A IRFPF30 INTERNATIONAL RECTIFIER b5E T> • Dynamic dv/dt Rating • • • • • Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling	OCR Scan	0015b04 IRFPF30 O-247 O-220 O-247	PDF
Untitled Abstract: No abstract text available Text: PNP medium power transistor Die no. B-54 These are epitaxial planar PNP silicon transistors. Features • available in a MPT3 MPT, SOT-89 package, see page 300 • collector-to-emitter breakdown voltage, BVCEO = 80 V (min) at lc = 1 mA • • Dimensions (Units : mm)	OCR Scan	OT-89) BCX53 I70CP-C0LLECT0R	PDF
transistor b54 Abstract: b54 marking Text: PNP medium power transistor Die no. B-54 Dimensions Units : mm These are epitaxial planar PNP silicon transistors. MPT3 Features • • • available in a MPT3 (MPT, SOT-89) package, see page 300 1.6 ± 0 .1 -m collector-to-emitter breakdown voltage, BVCEO = 80 V (min) at	OCR Scan	OT-89) BCX53 BCX56, 170CP-C0LLECT0R transistor b54 b54 marking	PDF
Untitled Abstract: No abstract text available Text: 3rd Angle System Unit : mm Drawing Not to Scale Tsuyama Matsushita Electric Co.,Ltd. Scope Control shown is designed in reference with our specifications. Also see samples attached. Mechanical Specifications : • Knob rotation angle • Knob stopper strength	OCR Scan		PDF
marking g1 Abstract: marking HA 7 sot23 transistor bfs20 BFS20 Text: rZ 7 SGS-THOMSON WiCTOOieS BFS20 SMALL SIGNAL NPN TRANSISTOR Type Marking BFS20 G1 . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . COMMON EMITTER IF AMPLIFIER SOT-23 ABSOLUTE MAXIMUM RATINGS	OCR Scan	BFS20 OT-23 OT-23 marking g1 marking HA 7 sot23 transistor bfs20 BFS20	PDF
BFS55A Abstract: Bfs 60 60dBi transistor b54 Text: SIEMENS BFS 55A NPN Silicon RF Transistor • For low-distortion broadband amplifiers up 1 at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFS 55A BFS 55A Q62702-F454	OCR Scan	Q62702-F454 0Db7431 EHT08056 EHT03057 235fc BFS55A Bfs 60 60dBi transistor b54	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BSP 17 SIPM O S Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • ^GS th = 2-1 4.0 V Type Vbs b f l DS(on) Package Marking BSP 17 50 V 3.2 A 0.1 ß SOT-223 BSP 17 Type BSP 17 Ordering Code Q67000-S220 Tape and Reel Information	OCR Scan	OT-223 Q67000-S220 E6327 fl235b05 235b05	PDF

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B54 MARKING Search Results

B54 MARKING Result Highlights (5)

B54 MARKING Datasheets Context Search

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CJ1H-CPU65H

TESDV5V0

MARKING CODE a11 sot363

B1C DIODE

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IPA105N15N3

IPB025N10N3

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65A3

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B52 transistor

65a3

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transistor b54

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marking g1

BFS55A

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