FZ400R33KF2
Abstract: 68nf b5 diode IGBT FZ 600
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 400 R 33 KF2 B5 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
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FZ400R33KF2
68nf
b5 diode
IGBT FZ 600
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b5 transistor
Abstract: ir igbt FD800R33KF2-K b5 diode
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FD 800 R 33 KF2-K B5 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung
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FD800R33KF2-K
b5 transistor
ir igbt
b5 diode
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FZ800R33KF2
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 33 KF2 B5 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
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FZ800R33KF2
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Hitachi DSA002715
Abstract: No abstract text available
Text: HA1127, HA1127P, HA1127FP 5 Transistor Arrays Ordering Information Application Type No. Package Commercial use HA1127 DP-14 Industrial use HA1127P DP-14 HA1127FP FP-14DA Pin Arrangement C1 1 14 C5 B1 2 13 E5 substrate E1 3 12 B5 B2 4 11 C4 C2 5 10 E4 B2
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HA1127,
HA1127P,
HA1127FP
HA1127
HA1127P
HA1127FP
DP-14
FP-14DA
Hitachi DSA002715
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HA1127
Abstract: Hitachi DSA0076 HA1127P DP-14 FP-14DA HA1127FP
Text: HA1127/P/FP 5 Transistor Arrays ADE-204-062 Z Rev. 0 Dec. 2000 Ordering Information Application Type No. Package Commercial use HA1127 DP-14 Industrial use HA1127P DP-14 HA1127FP FP-14DA Pin Arrangement C1 1 14 C5 B1 2 13 E5 (substrate) E1 3 12 B5 B2 4 11
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HA1127/P/FP
ADE-204-062
HA1127
DP-14
HA1127P
HA1127FP
FP-14DA
HA1127
Hitachi DSA0076
HA1127P
DP-14
FP-14DA
HA1127FP
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Untitled
Abstract: No abstract text available
Text: DMA20402 Silicon PNP epitaxial planar type Unit: mm For general amplification • Features High forward current transfer ratio hFE with excellent linearity Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant Marking Symbol: B5
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DMA20402
UL-94
DSA2002
DMA204020R
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Untitled
Abstract: No abstract text available
Text: B5-8 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)30â V(BR)CBO (V) I(C) Max. (A)2.5 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.
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Freq175M
Code4-28
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diode s6 6d
Abstract: MARKING 6B diode b86g s4si marking EB diode DIODE 4d gv marking 6B 6H MARKING diode IPP023N04N marking a6b
Text: IPP023N04N G Ie]R IPB023N04N G "%&$!"# 3 Power-Transistor Product Summary Features Q & , - 7@B( + :? 8 2 ? 5 . ? :? D6BB EAD:3 = 6 @G6B, EAA= I Q * E2 = :7:65 2 44@B5:? 8 D@ $ )# 7@BD2 B86D2 AA= :42 D:@? C V 9H ,( K R , @? >2 H *&+ Z"
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IPP023N04N
IPB023N04N
diode s6 6d
MARKING 6B diode
b86g
s4si
marking EB diode
DIODE 4d gv
marking 6B
6H MARKING diode
marking a6b
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Untitled
Abstract: No abstract text available
Text: B5-8Z Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)14 V(BR)CBO (V) I(C) Max. (A)2.5 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.
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Freq175M
Code4-28
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HA1127P
Abstract: HA1127 HA1127FP IC503
Text: HA1127, HA1127P, HA1127FP 5 Transistor Arrays Pin Arrangement C1 1 14 C5 B1 2 13 E5 substrate E1 3 12 B5 B2 4 11 C4 C2 5 10 E4 B2 6 9 B4 E2 7 8 C3 (Top view) Note: Use pin 13 as the lowest potential for this IC. 503 HA1127, HA1127P, HA1127FP Absolute Maximum Ratings (Ta = 25°C)
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HA1127,
HA1127P,
HA1127FP
HA1127
HA1127P
HA1127
HA1127FP
IC503
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TLP 527
Abstract: IR5065 transistor TIP 350 TLP-531 ST555 2N6676 IR5061 IR5066 ST-550 TLP 535
Text: kn| I SEnlCONDUCTOR TECHNOLOGY OSE D | fll3bM5fl □ D□ □ B5 *4 M [ 1 ^ * T - 5 S .- 0 / NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTORS Industry Type Power Dissipation @25 "C watts VCEV (volts) 2N6672 2N6673 2N6674 2N6675 2N6676 2N6672 2N6673
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T-53--0/
2N6672
2N6673
2N6674
2N6675
2N6676
TLP 527
IR5065
transistor TIP 350
TLP-531
ST555
IR5061
IR5066
ST-550
TLP 535
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transistor c32
Abstract: TRANSISTOR CATALOGUE itt 2222 BLF348 Philips 809 08003 ITT 2222 A IEC134
Text: b b5 3 ^ 31 Philips S em iconductors 0030055 T 2 7 I B APX Product specification VHF linear push-pull power MOS transistor BLF348 N AMER PHILIPS/DISCRETE t'ÎE D PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability
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OT262
BLF348
MSB008
transistor c32
TRANSISTOR CATALOGUE
itt 2222
BLF348
Philips 809 08003
ITT 2222 A
IEC134
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BUK438-500B
Abstract: No abstract text available
Text: PHILIPS INT ER NA TI O N AL b5 E D WB 711 Dfl2 b Db3 T3 1 Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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711DfiSb
BUK438-500B
7110flSb
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philips ldh
Abstract: BUK101-50GL transistor sr 61
Text: P H ILIP S IN TE RN A TI ON A L b5 E D m 7 1 1 0 0 2 b 0 Gti3 7 T i Philips Semiconductors 7 Tb M P H I N Product Specification PowerMOS transistor BUK101-50GL Logic level DESCRIPTION QUICK REFERENCE DATA
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711002b
BUK101-50GL
Iisi/Iisl25
philips ldh
transistor sr 61
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MOC3021 and applications
Abstract: 8-pin optoisolator MOC3021 APPLICATION CIRCUITS TIP 43c transistor Precision triac control thermostat Opto-isolator MOC3021 amp03
Text: ANALOG DEVICES INC b5 E D ANALOG ► DEVICES FEATURES —55°C to +150°C —60°F to +300°F Operation ±0.5°C Accuracy Over Temperature (typ) Temperature-Proportional Voltage Output User Programmable Temperature Trip Points User Programmable Hysteresis
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100kQ
TMP-01
MOC3021 and applications
8-pin optoisolator
MOC3021 APPLICATION CIRCUITS
TIP 43c transistor
Precision triac control thermostat
Opto-isolator MOC3021
amp03
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Untitled
Abstract: No abstract text available
Text: B5 9 -9 7 2N3954, 2N3955, 2N3956 N-CHANNEL DUAL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • LOW AND MEDIUM FREQUENCY A bsolute m axim um ratin gs at TA = 2 5 'C Reverse Gate Source & Reverse Gate Drain Voltage - 50 V Gate Current 50 mA Total Device Power Dissipation each side
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2N3954,
2N3955,
2N3956
2N3954
2N3955
ProcessNJ16
0GQG725
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10Q4
Abstract: No abstract text available
Text: -u B tÆ iS E A fiiM - big p o w er mmm u PowerTech aao AMPERES PT ‘ S5 D1 PT-B5 Ü2 SILICON IMPN TRANSISTORS M A X IM U M FA T IN G S SYMBOL Col lector-B fise V o lta le PT "6501 PT6502 80V 100 V V CEO
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PT6502
20QJC
TQ-114
10Q4
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BU 450 bdx
Abstract: bux81
Text: TEXAS INSTR COPTO} b5 DFIflTblTab 003bbS7 □ 62C 8 9 6 1 7 2 6 TEXAS INSTR < Ö P T Ü 7 3Ò 657 BUX80 BUX81 N-P-N SILICON POWER TRANSISTORS / ~ J 3 - / 3 OCTOBER 1982 - REVISED OCTOBER 1984 150 W at 2 5 ° C C ase Temperature 10 A Continuous Collector Current
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003bbS7
BUX80
BUX81
T-33-/3
BU 450 bdx
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TIP12B
Abstract: tip127 texas tip 127 TIP127 tip 127 texas instruments 2n6128 TIP120 TIP121 TIP122 TIP125
Text: TEXAS INSTR ÎOPTOÏ 8961726 TEXAS b5 INSTR D E | flTblYSb □ D3fc.cl[]D 4 <OPTO> 62C 36900 TIP125, TIP126, TIP127 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS R E V IS E D O C TO B E R 1 9 8 4 Designed For Complementary use with TIP 120, TIP 121, TIP 122
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TIP125,
TIP126,
TIP127
TIP120,
TIP121,
TIP122
T0-22QAB
T-33-31
TIP125
TIP126
TIP12B
tip127 texas
tip 127
tip 127 texas instruments
2n6128
TIP120
TIP121
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Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO LTD SSE D T'ì'ìDTm 000CH34 2 b5 H S A K J Silicon PN P Epitaxial Planar 2SB1258 ☆ Darlington ☆ Complement to type 2SD 1785 Application Exam ple: • Outline Drawing 4- Driver for Solenoid, Relay and Motor, and General Purpose •FM20
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000CH34
2SB1258
10max
1000min
100typ
T0220)
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C2688
Abstract: c2688 transistor 5257 transistor equivalent transistor TIP2955 br c2688 C-2688 c2688 L L72B tRANSISTOR c2688 TIP2955
Text: TEXAS INSTR {OPTO} 8961726 b5 TEXAS INSTR » F lfiT b lT S b D D 3b 3 62 C 3 6 9 9 8 OPTO TIP2955 P-N-P SILICON POWER TRANSISTOR JAN U ARY 1972 - REVISED OCTOBER 1984 • Designed for Complementary Use with TIP 3055 • 9 0 W at 2 5 ° C C a se Temperature
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TIP2955
TIP3055
t0-218aa
22eoi2
D0370D3
TIP2955
C2688
c2688 transistor
5257 transistor
equivalent transistor TIP2955
br c2688
C-2688
c2688 L
L72B
tRANSISTOR c2688
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RLD2-1
Abstract: MB3752 fujitsu 1988
Text: FUJITSU MICROELECTRONICS 31E D • 3 7 M c]?b5 O O l S â b T I FMI February 1988 Edition 1.0 VOLTAGE REGULATOR The Fujitsu MB3752 Is a monolithic voltage regulator IC. It contains a temperature compensated reference voltage circuit, a surge protected error amplifier and high
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MB3752
14-LEAD
DIP-14C-C01)
D14005S-2C
374T7b2
MB3752
FPT-14P-M01)
0-10i
RLD2-1
fujitsu 1988
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WP02R
Abstract: No abstract text available
Text: ]= POWER fE CONVERTIBLES WP02R SERIES 2 WATTS REGULATED DC/DC C O N V E R T E R S LOW-COST, 2:1 WIDE INPUT RANGE FEATURES APPLICATIONS • • • • • TELECOMMUNICATION APPLICATIONS LOW-COST SMALL DIP PACKAGE SIZE FULL POWER TO +B5°C EXTENDED TEMPERATURE RANGE:
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WP02R
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Untitled
Abstract: No abstract text available
Text: I S 0C0P1 COMPONE NTS LTD 7SC D • 4 fl fl b5 1 0 OOOOllfl 270 ■ ISO 6 N 138, 6 N 139 LOW INPUT CURRENT, HIGH GAIN OPTO ISOLATORS ISOCOM, INC. 274 E. HAMILTON AVE. SUITE F CAMPBELL, CA. 95008 ABSOLUTE MAXIMUM RATINGS 25°C unless otherw ise noted FEATURES
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4flfltiS10
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