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    MPQ3904

    Abstract: motorola mpq3904
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad A m plifier Sw itching Transistor M PQ3904 NPN Silicon Motorola Preferred Device ita nin A3 rïïi rari it i rri LA J L rK J NPN r y i~V~" til l i j l i l Lil LLI l i l Lit MAXIMUM RATINGS Rating Collector-Emitter Voltage


    OCR Scan     		PDF PQ3904 b3b7255 132b2 MPQ3904 motorola mpq3904

    C122B

    Abstract: C122 c122D1 C122B1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA C122 1 Series Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled,


    OCR Scan     		PDF 21A-04 CTO-220AB) b3b7E55 3b725S 00T0207 C122B C122 c122D1 C122B1

    Untitled

    Abstract: No abstract text available
    Text: I NOT RECO M M EN D ED FO R NEW D ES IG N S MOTOROLA SC DIODES/OPTO BSE D • b3b72SS 0060*106 T - z S 'I S 2N 4168 thru Silicon Controlled Rectifiers 2N 4174 2N 4184 Reverse Blocking Triode Thyristors . . . multi-purpose PNPN silicon controlled rectifiers suited for industrial, consumer,


    OCR Scan     		PDF b3b72SS ZN4168 2N4174 2N4184 2N4190

    W6 13A Diode

    Abstract: 930 18a motorola zener 2a7 Motorola 581 1A6 Zener 139 v91 T 348 opto marking 314
    Text: M O T O R O L A SC D I ODE S/ OPT O b3b7SSS 0DÔ1337 T 5SE D Order this data sheet by 1.5SMC6.8/D MOTOROLA SEMICONDUCTOR T-//-A 3 TECHNICAL DATA 1.5SMC6.8, A thru 1.5SMC200, A Zener O vervoltage Transient Su p p re ssors . the 1.5SM C6.8 series is designed to protect voltage sensitive com ponents from high


    OCR Scan     		PDF b3b72S5 W6 13A Diode 930 18a motorola zener 2a7 Motorola 581 1A6 Zener 139 v91 T 348 opto marking 314

    WE VQE 24 E

    Abstract: WE VQE 23 F vqe 24 e WE VQE 23 E vqe 14 vqe 13 vqe 14 E VQE 22 VQE 23 E vqe 24 d
    Text: MOTOROLA Order this documenti by MHPM7B25A120B/D SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module Integrated Power Stage for 5 hp Motor Drives MHPM7B25A120B This device is not recommended for new designs (This device is replaced by MHPM7A25S120DC3) 25 AMP, 1200 VOLT


    OCR Scan     		PDF MHPM7B25A120B/D MHPM7A25S120DC3) WE VQE 24 E WE VQE 23 F vqe 24 e WE VQE 23 E vqe 14 vqe 13 vqe 14 E VQE 22 VQE 23 E vqe 24 d

    ZPD 5.1 ITT

    Abstract: ITT ZPD 7.5 ITT ZPD 3.9 ZPD18 ITT zpd 3.3 itt ZPD ITT zener diode 3 3 ITT ZPD 4.3 ZPD13 ITT Zener diode itt diode zener 182
    Text: MOTOROLA SC DIODES/OPTO D • h3b725S 00653^1 bO S ■ Section 4.2.4 Data Sheets Zener Voltage Regulator Diodes Section 4.2.4.1 Axial Leaded SECTION 4.2.4.1.1 500 mW DO-35 GLASS M U L T IP L E P A C K A G E Q U A N T IT Y (M P Q ) R E Q U IR E M E N T S


    OCR Scan     		PDF DO-35 1N746A 1N759A, 1N957B 1N992B, 1N4370A 1N4372A 1N4678 1N4717 ZPD 5.1 ITT ITT ZPD 7.5 ITT ZPD 3.9 ZPD18 ITT zpd 3.3 itt ZPD ITT zener diode 3 3 ITT ZPD 4.3 ZPD13 ITT Zener diode itt diode zener 182

    b6045

    Abstract: DIODE B6045 MOTOROLA
    Text: MOTOROLA Order this document by MBR6045WT/D SEMICONDUCTOR TECHNICAL DATA Advance Information M BR6045W T SW ITCH MODE Pow er R ectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the


    OCR Scan     		PDF MBR6045WT/D BR6045W b3b75SS 340K-01 b6045 DIODE B6045 MOTOROLA

    1N3491

    Abstract: motorola 1n3495 1N3491R 1N3495 1N3493 1N3492 MR327R 1N3494 N349 MR331
    Text: NOTOROLA SC -CDIODES/OPTOJ 1 5 E J> I t,3t?ass 0071533 0 T -— 0 1 — 1 7 , MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a t a S h e e t SILICON RECTIFIERS 25 AMPERE M E D IU M -C U R R E N T S IL IC O N R E C T IF IE R S 50-400 VOLTS DIFFUSED JUNCTION


    OCR Scan     		PDF 1N3491 1N3492 1N3493 1N3494 1N3495 motorola 1n3495 1N3491R MR327R N349 MR331

    WE VQE 23 F

    Abstract: WE VQE 24 E 200 amp 120 V igbt rectifier bridge 300v 30a WE VQE 11 E 50 amp igbt IGBT 50 amp 1000 volt vqe 24 e WE VQE 23 E WE VQE 24
    Text: MOTOROLA Order this documenti by MHPM7B30A60B/D SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module MHPM7B30A60B Integrated Power Stage for 3.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A30E60DC3) This module integrates a 3-phase input rectifier bridge, 3-phase


    OCR Scan     		PDF MHPM7B30A60B/D MHPM7A30E60DC3) 01QD3M3 WE VQE 23 F WE VQE 24 E 200 amp 120 V igbt rectifier bridge 300v 30a WE VQE 11 E 50 amp igbt IGBT 50 amp 1000 volt vqe 24 e WE VQE 23 E WE VQE 24

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MBRB3030CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifier MBRB3030CT Using the Schottky Barrier principle with a proprietary barrier metal. These state-of-the-art devices have the following features: • • •


    OCR Scan     		PDF MBRB3030CT/D MBRB3030CT

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFE T A m p lifie rs BFR30LT1 BFR31LT1 N-Channel 2 SOURCE 1 2 CASE 3 1 8 -0 8 , STYLE 10 S O T -23 TO -236A B MAXIMUM RATINGS Symbol Value Unit D rain-Source Voltage VdS 25 Vdc G a te -S o u rce Voltage vgs 25 Vdc Symbol


    OCR Scan     		PDF BFR30LT1 BFR31LT1 -236A 3b725S