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    mtd10n05et

    Abstract: MTD10N05E 369A-10 AN569 MOTOROLA N-Channel MOSFET
    Text: MOTOROLA SC XSTPS/R F bflE b3b72Si4 D DGTfl SEH SSS • M O T b M OTOROLA ■ I SEM ICONDUCTOR TECHNICAL DATA M T D 10N 05E Designer's Data Sheet T M O S IV P o w e r Field E ffe c t T ra n s is to r Motorola Preferred Device TMOS POWER FETs 10 AMPERES RDS(on) = 0 1 OHM


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    PDF MTD10N05E mtd10n05et MTD10N05E 369A-10 AN569 MOTOROLA N-Channel MOSFET

    FLC 100

    Abstract: No abstract text available
    Text: 4bE D • b3b72Si4 GG'iaTO? MO T O R O L A SC □ ■ HOTb XSTRS/R F MOTOROLA SEMICONDUCTOR ■ m h h h h m h m h h TECHNICAL DATA NPN MJ11032HX, HXV PNP MJ11033HX, HXV NPN/PNP Silicon Complementary Power Darlington Transistors DM0 lllllll Discrete M ilitary


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    PDF b3b72Si4 MJ11032HX, MJ11033HX, FLC 100

    JE370

    Abstract: LT 7706 MJE520 Je52 MJE520 MOTOROLA
    Text: MOTOROLA SC 15E 0 I fc,3b?25M ÜOflS331 4 | XSTRS/R F T -3* 3 -ö f MOTOROLA SEMICONDUCTOR MJE520 TECHNICAL DATA 3 AMPERE PLASTIC MEDIUM-POWER NPN SILICON TRANSISTOR POWER TRANSISTOR NPN SILICON 30 V O L T S 25 W A T T S . . .'designed for use in general-purpose amplifier and switching


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    PDF OflS331 MJE520 JE370 JE370 LT 7706 MJE520 Je52 MJE520 MOTOROLA