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    B3A MARK Search Results

    B3A MARK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    B3A MARK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TC58FVM5T3AFT65

    Abstract: No abstract text available
    Text: TC58FVM5 T/B (2/3)A(FT/XB)65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M x 8 BITS/2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM5T2A/B2A/T3A/B3A is a 33554432-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 4194304 × 8 bits or as 2097152 × 16 bits. The TC58FVM5T2A/B2A/T3A/B3A features


    Original     		PDF TC58FVM5 32MBIT TC58FVM5T2A/B2A/T3A/B3A 33554432-bit, TC58FVM5T3AFT65

    ba60

    Abstract: TC58FVM5B2A TC58FVM5T2A TC58FVM5T3AFT65 TC58FVM5
    Text: TC58FVM5 T/B (2/3) A (FT/XB) 65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M x 8 BITS/2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM5T2A/B2A/T3A/B3A is a 33554432-bit, 3.0-V read-only electrically erasable and programmable


    Original     		PDF TC58FVM5 32MBIT TC58FVM5T2A/B2A/T3A/B3A 33554432-bit, ba60 TC58FVM5B2A TC58FVM5T2A TC58FVM5T3AFT65 TC58FVM5

    XB-70

    Abstract: TC58FYM5T2A TC58FVM5B2A TC58FVM5T2A
    Text: TC58FYM5 T/B (2/3) A (FT/XB) 70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M x 8 BITS/2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FYM5T2A/B2A/T3A/B3A is a 33554432-bit, 3.0-V read-only electrically erasable and programmable


    Original     		PDF TC58FYM5 32MBIT TC58FYM5T2A/B2A/T3A/B3A 33554432-bit, XB-70 TC58FYM5T2A TC58FVM5B2A TC58FVM5T2A

    TOSHIBA TC58 cmos memory -NAND

    Abstract: ba60 TC58FVM5B2A TC58FVM5T2A 33554432-BIT TOSHIBA TC58
    Text: TC58FVM5 T/B (2/3) A (FT/XB) 65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M x 8 BITS/2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM5T2A/B2A/T3A/B3A is a 33554432-bit, 3.0-V read-only electrically erasable and programmable


    Original     		PDF TC58FVM5 32MBIT TC58FVM5T2A/B2A/T3A/B3A 33554432-bit, TOSHIBA TC58 cmos memory -NAND ba60 TC58FVM5B2A TC58FVM5T2A 33554432-BIT TOSHIBA TC58

    BA57

    Abstract: CA1113
    Text: TC58FYM5 T/B (2/3) A (FT/XB) 70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M x 8 BITS/2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FYM5T2A/B2A/T3A/B3A is a 33554432-bit, 3.0-V read-only electrically erasable and programmable


    Original     		PDF TC58FYM5 32MBIT TC58FYM5T2A/B2A/T3A/B3A 33554432-bit, BA57 CA1113

    TC58FVM5T2ATG65

    Abstract: TC58FVM5B2ATG65 tc58fvm5t2atg TC58FVM5T3ATG65 tc58fvm5t2at TC58FVM5B2ATG TC58FVM5B3ATG65 TC58FVM5B2A TC58FVM5T2A 007000H-007FFFH
    Text: TC58FVM5 T/B (2/3)A(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M x 8 BITS/2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM5T2A/B2A/T3A/B3A is a 33554432-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 4194304 words × 8 bits or as 2097152 words × 16 bits. The TC58FVM5T2A/B2A/T3A/B3


    Original     		PDF TC58FVM5 32MBIT TC58FVM5T2A/B2A/T3A/B3A 33554432-bit, TC58FVM5T2A/B2A/T3A/B3 TC58FVM5T2ATG65 TC58FVM5B2ATG65 tc58fvm5t2atg TC58FVM5T3ATG65 tc58fvm5t2at TC58FVM5B2ATG TC58FVM5B3ATG65 TC58FVM5B2A TC58FVM5T2A 007000H-007FFFH

    transistor ba47

    Abstract: BA60 2A00 ba37 diode ba63 TC58FVM5B2A TC58FVM5T2A TC58FVM5
    Text: TC58FVM5 T/B (2/3)A(FT/XB)65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M x 8 BITS/2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM5T2A/B2A/T3A/B3A is a 33554432-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 4194304 words × 8 bits or as 2097152 words × 16 bits. The TC58FVM5T2A/B2A/T3A/B3


    Original     		PDF TC58FVM5 32MBIT TC58FVM5T2A/B2A/T3A/B3A 33554432-bit, TC58FVM5T2A/B2A/T3A/B3 transistor ba47 BA60 2A00 ba37 diode ba63 TC58FVM5B2A TC58FVM5T2A

    TC58FVM5B2A

    Abstract: TC58FVM5T2A tc58 flash
    Text: TC58FVM5 T/B (2/3)A(FT/XB)65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M x 8 BITS/2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM5T2A/B2A/T3A/B3A is a 33554432-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 4194304 words × 8 bits or as 2097152 words × 16 bits. The TC58FVM5T2A/B2A/T3A/B3


    Original     		PDF TC58FVM5 32MBIT TC58FVM5T2A/B2A/T3A/B3A 33554432-bit, TC58FVM5T2A/B2A/T3A/B3 TC58FVM5B2A TC58FVM5T2A tc58 flash

    marking sm

    Abstract: multifuse part marking Bourns
    Text: March 31, 2003 Circuit Protection Solutions Bourns Rep District Sales Managers Bourns Rep Distributor Managers Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team e t a d p U IT CTION U C CIRPROTE Bourns Multifuse® MF-SM/33


    Original     		PDF MF-SM/33 MF-SM/33 MF-SM100/33-2 MF-SM150/33-2 marking sm multifuse part marking Bourns

    multifuse

    Abstract: marking sm marking code SM diode B3A marking MARKING B3A General Semiconductor SM marking code mf marking code Sm SM marking code SM10
    Text: March 31, 2003 Circuit Protection Solutions Bourns Rep District Sales Managers Bourns Rep Distributor Managers Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team e t a d p U IT CTION U C CIRPROTE Bourns Multifuse® MF-SM/33


    Original     		PDF MF-SM/33 MF-SM/33 MF-SM100/33-2 MF-SM150/33-2 multifuse marking sm marking code SM diode B3A marking MARKING B3A General Semiconductor SM marking code mf marking code Sm SM marking code SM10

    B3A SOT

    Abstract: B3A sot23-5 AD8605 SOT23-5 B3A RU-14 B3A SOT23 AD8605ACB-REEL AD8605ACB-REEL7 AD8606 AD8608ARZ-REEL71
    Text: Precision, Low Noise, CMOS, Rail-to-Rail, Input/Output Operational Amplifiers AD8605/AD8606/AD8608 FEATURES FUNCTIONAL BLOCK DIAGRAMS TOP VIEW BUMP SIDE DOWN The combination of low offsets, low noise, very low input bias currents, and high speed makes these amplifiers useful in a


    Original     		PDF AD8605/AD8606/AD8608 AD8608 AD8606 AD8605 OT-23 14-Lead B3A SOT B3A sot23-5 SOT23-5 B3A RU-14 B3A SOT23 AD8605ACB-REEL AD8605ACB-REEL7 AD8606 AD8608ARZ-REEL71

    AD8605

    Abstract: AD8608 B3A sot23-5 B3A SOT SOT23-5 B3A AD8606 MS-012-AB RU-14 footprint soic_n 14 narrow
    Text: Precision, Low Noise, CMOS, Rail-to-Rail, Input/Output Operational Amplifiers AD8605/AD8606/AD8608 FEATURES FUNCTIONAL BLOCK DIAGRAMS TOP VIEW BUMP SIDE DOWN The combination of low offsets, low noise, very low input bias currents, and high speed makes these amplifiers useful in a


    Original     		PDF AD8605/AD8606/AD8608 AD8608 AD8606 AD8605 OT-23 14-Lead AD8608 B3A sot23-5 B3A SOT SOT23-5 B3A AD8606 MS-012-AB RU-14 footprint soic_n 14 narrow

    5962-8984106KA

    Abstract: GAL22V10C-10LD 5962-8984105la QPC22V10 GAL22V10D sample ATMEL 5962-8984106KA marking B3A 596289841123a 5962-89841043A 5962-8984104LA
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Added K package. Added 04 device, two suppliers and 05 device, one supplier. Added vendor CAGE 34335 for devices 01L, 013, and 02L. Editorial changes throughout. Added vendor CAGE 34335 for devices 01K, 023, and 02K. Redrawn.


    Original     		PDF 5962-R079-93. 1FN41 1FN41 6S055 5962-8984106KA GAL22V10C-10LD 5962-8984105la QPC22V10 GAL22V10D sample ATMEL 5962-8984106KA marking B3A 596289841123a 5962-89841043A 5962-8984104LA

    PALC22V10D-25DMB

    Abstract: PALC22V10D-20DMB BKA marking code 5962-89841 qml-38535 QPC22V10-20 5962-8984104LA MARKING B3A QPC22V10 596289841123a
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Added K package. Added 04 device, two suppliers and 05 device, one supplier. Added vendor CAGE 34335 for devices 01L, 013, and 02L. Editorial changes throughout. Added vendor CAGE 34335 for devices 01K, 023, and 02K. Redrawn.


    Original     		PDF 5962-R079-93. 1FN41 5962-R263-97 5962-R341-97 1FN41 6S055 PALC22V10D-25DMB PALC22V10D-20DMB BKA marking code 5962-89841 qml-38535 QPC22V10-20 5962-8984104LA MARKING B3A QPC22V10 596289841123a

    AD8605

    Abstract: AD8606 AD8608 SOIC-14 SOIC-8 AD86081
    Text: Precision, Low Noise, CMOS, Rail-to-Rail, Input/Output Operational Amplifiers AD8605/AD8606/AD8608 FEATURES FUNCTIONAL BLOCK DIAGRAMS TOP VIEW BUMP SIDE DOWN The combination of low offsets, low noise, very low input bias currents, and high speed makes these amplifiers useful in a


    Original     		PDF AD8605/AD8606/AD8608 AD8608 AD8606 AD8605 OT-23 RU-14 AD8606 AD8608 SOIC-14 SOIC-8 AD86081

    AD8605

    Abstract: AD8606 AD8608 SOIC-14
    Text: Precision Low Noise CMOS Rail-to-Rail Input/Output Operational Amplifiers AD8605/AD8606/AD8608 FEATURES APPLICATIONS Low offset voltage: 65 µV maximum Low input bias currents: 1 pA maximum Low noise: 8 nV/√Hz Wide bandwidth: 10 MHz High open-loop gain: 120 dB


    Original     		PDF AD8605/AD8606/AD8608 AD8606 OT-23 14-Lead AD8605 AD8606 AD8608 SOIC-14

    AD8605

    Abstract: AD8606 AD8608 SOIC-14 B3A sot23-5 B3A SOT23
    Text: Precision, Low Noise, CMOS, Rail-to-Rail, Input/Output Operational Amplifiers AD8605/AD8606/AD8608 FEATURES APPLICATIONS Low offset voltage: 65 V maximum Low input bias currents: 1 pA maximum Low noise: 8 nV/√Hz Wide bandwidth: 1000 V/mV High open-loop gain: 120 dB


    Original     		PDF AD8605/AD8606/AD8608 AD8605) AD8606) AD8605 AD8606 RU-14 AD8605 AD8606 AD8608 SOIC-14 B3A sot23-5 B3A SOT23

    AD8605

    Abstract: AD8606 AD8608 SOIC-14 MO-187-AA Package B3A sot23-5
    Text: Precision, Low Noise, CMOS, Rail-to-Rail, Input/Output Operational Amplifiers AD8605/AD8606/AD8608 FEATURES FUNCTIONAL BLOCK DIAGRAMS TOP VIEW BUMP SIDE DOWN The combination of low offsets, low noise, very low input bias currents, and high speed makes these amplifiers useful in a


    Original     		PDF AD8605/AD8606/AD8608 AD8608 AD8606 AD8605 OT-23 14-Lead RU-14 AD8606 AD8608 SOIC-14 MO-187-AA Package B3A sot23-5

    "Microphone Preamplifier" 1.5V transistor

    Abstract: AD8606 mark B6A AD8605 AD8608 SOIC-14
    Text: Precision, Low Noise, CMOS, Rail-to-Rail, Input/Output Operational Amplifiers AD8605/AD8606/AD8608 FEATURES FUNCTIONAL BLOCK DIAGRAMS TOP VIEW BUMP SIDE DOWN The combination of low offsets, low noise, very low input bias currents, and high speed makes these amplifiers useful in a


    Original     		PDF AD8605/AD8606/AD8608 AD8608 AD8606 AD8605 OT-23 RU-14 "Microphone Preamplifier" 1.5V transistor AD8606 mark B6A AD8608 SOIC-14

    ad8605

    Abstract: 5v headphone AMPLIFIER CIRCUIT DIAGRAM
    Text: Precision Low Noise, CMOS Rail-to-Rail, Input/Output Operational Amplifiers AD8605/AD8606/AD8608 FEATURES APPLICATIONS Low offset voltage: 65 V maximum Low input bias currents: 1 pA maximum Low noise: 8 nV/√Hz Wide bandwidth: 1000 V/mV High open-loop gain: 120 dB


    Original     		PDF AD8605/AD8606/AD8608 AD8605) AD8606) AD8605, AD8606, AD8608 14-Lead RU-14 ad8605 5v headphone AMPLIFIER CIRCUIT DIAGRAM

    D-10

    Abstract: No abstract text available
    Text: REVISIONS DATE YR-MO-DA DESCRIPTION LTO APPROVED 1987 OCT 7 C o nvert to m i l i t a r y draw ing fo rm a t. Add case o u t lin e Z , change case o u t lin e 3 le a d f i n i s h from C to A f o r vendor p a r t number AM2909A/B3A. Add vendor CAGE number 50088 to d ra w in g ._


    OCR Scan     		PDF AM2909A/B3A. MIL02 7013X AM2909A/B3A TS2909AMEB/C 701ZX 09A/BYA D-10

    D-10

    Abstract: No abstract text available
    Text: REVISIONS DATE YR-MO-DA DESCRIPTION LTO APPROVED 1987 OCT 7 C o nvert to m i l i t a r y draw ing fo rm a t. Add case o u t lin e Z , change case o u t lin e 3 le a d f i n i s h from C to A f o r vendor p a r t number AM2909A/B3A. Add vendor CAGE number 50088 to d ra w in g ._


    OCR Scan     		PDF AM2909A/B3A. 7013X AM2909A/B3A TS2909AMEB/C 701ZX 09A/BYA D-10

    b3a transistor

    Abstract: Transistor Bo 47 MARKING B3A marking b3n
    Text: UMB3N IMB3A Transistor, digitai, dual, PNP, with 1 resistor Features Dimensions Units : mm available in UMT6 (UM6) and SMT6 (IMD, SC-74) package UMB3N (UMT6) 2.0±0.2 |l.3±0Jj package marking: UMB3N and IMB3A; B3 0 .6 5 I w (2 ) («B BBC i t package contains two independent


    OCR Scan     		PDF SC-74) DTA143TKA) SC-70) SC-59) b3a transistor Transistor Bo 47 MARKING B3A marking b3n

    pal20ra10mjs

    Abstract: PAL16C1ML m38510 8506504RA PAL20L10AMJS 8412909LA PAL20L8AMJS PAL12L6MJ 8412906LA 16R8A
    Text: Military PAL Devices JAN 3 8 5 1 0 and Standard M ilitary Drawing Program Advanced Micro Devices and Monolithic Memories are active participants in the JAN 38510 and Standard Military Drawing SMD Program. The idea behind the SMD Program is to stan­ dardize MIL-STD-883, Class B microcircuits where fully qualified


    OCR Scan     		PDF MIL-STD-883, product680301KA 962-86803013A 962-87528012A 5962-8752802RA 962-87528022A 5962-8752802SA 5962-8752803RA 962-87528032A 5962-8752803SA pal20ra10mjs PAL16C1ML m38510 8506504RA PAL20L10AMJS 8412909LA PAL20L8AMJS PAL12L6MJ 8412906LA 16R8A