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    B3 SOT23 Search Results

    B3 SOT23 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation

    B3 SOT23 Datasheets Context Search

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    KDS184

    Abstract: 1B31 MARKING b3 MARKING B3 SOT-23 B3 MARKING sot23 01B3
    Text: SEMICONDUCTOR KDS184 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 B3 1 2 Item Marking Description Device Mark B3 KDS184 hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


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    PDF KDS184 OT-23 KDS184 1B31 MARKING b3 MARKING B3 SOT-23 B3 MARKING sot23 01B3

    1SS184

    Abstract: marking code b3 reverse recovery time
    Text: 1SS184 SILICON EPITAXIAL PLANAR DIODE Features 3 • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 1 2 Marking Code: B3 SOT-23 Plastic Package Applications Ultra high speed switching application Absolute Maximum Ratings Tj = 25OC


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    PDF 1SS184 OT-23 1SS184 marking code b3 reverse recovery time

    MARKING b3

    Abstract: 1SS184
    Text: 1SS184 Switching Diodes SOT-23 1.ANODE 2. ANODE 3. CATHODE Features — — Low forward voltage : VF 3 =0.9V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) MARKING: B3 Dimensions in inches and (millimeters) Maximum Ratings @TA=25℃ Parameter Symbol Limits


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    PDF 1SS184 OT-23 100mA MARKING b3 1SS184

    marking code b3

    Abstract: 1SS184
    Text: 1SS184 SILICON EPITAXIAL PLANAR DIODE Features 3 • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 1 2 Marking Code: B3 SOT-23 Plastic Package Applications Ultra high speed switching application Absolute Maximum Ratings Tj = 25OC


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    PDF 1SS184 OT-23 marking code b3 1SS184

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS184 SOT-23 Switching Diode FEATURES y Low forward voltage y Fast reverse recovery time MARKING: B3 1 3 2 Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage


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    PDF OT-23 1SS184 OT-23

    ISS184

    Abstract: MARKING b3 MARKING B3 SOT-23 1SS184
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS184 Switching DIODES SOT-23 FEATURES y Low forward voltage : VF 3 =0.9V(typ.) y Fast reverse recovery time : trr=1.6ns(typ.) 1.ANODE MARKING: B3 2. ANODE 3. CATHODE Maximum Ratings @TA=25℃


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    PDF OT-23 1SS184 OT-23 100mA ISS184 ISS184 MARKING b3 MARKING B3 SOT-23 1SS184

    2SC1018

    Abstract: sk3024 2S01664 2S01526 2N3925 2N3818 2S01005 bly14 PTC144 2N3718
    Text: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 25 30 2N3444 ZTX451 2N2404 2N2404 2N3818 2SC777 ZTX452 2SC1517AK :iK3024 SK3024 ZTX453 PTC144 2S01005 2S01005 B2-8Z B3-12 S01574 40450 ~~9~~0 35 40 TP3253 2N3253 BFX51 BFX61 BlY14 2SC140 TP3252


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    PDF 2S01280 2SC1568 2SC1518 ZTX449 2S01664 2S01225M 2SC1018 sk3024 2S01526 2N3925 2N3818 2S01005 bly14 PTC144 2N3718

    ISS184

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS184 Switching Diode SOT-23 FEATURES y Low forward voltage : VF 3 =0.9V(typ.) y Fast reverse recovery time : trr=1.6ns(typ.) 1.ANODE MARKING: B3 2. ANODE 3. CATHODE Maximum Ratings @TA=25℃


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    PDF OT-23 1SS184 OT-23 100mA ISS184 ISS184

    CBVK741B019

    Abstract: F63TNR L86Z MMPQ2907 NDM3000 NDM3001 SOIC-16
    Text: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*


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    PDF MMPQ2907 SOIC-16 CBVK741B019 F63TNR L86Z MMPQ2907 NDM3000 NDM3001 SOIC-16

    Untitled

    Abstract: No abstract text available
    Text: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*


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    PDF MMPQ2907 SOIC-16

    MMPQ2907

    Abstract: SOIC-16
    Text: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*


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    PDF MMPQ2907 SOIC-16 MMPQ2907 SOIC-16

    33272

    Abstract: 33262 33272 -8 ceramic capacitor 22nf 25SC47M DO5022P EC31 KSH30 LMK212BJ105MG LMK325BJ106MN
    Text: C4 1uF 10V 10V to 14V VIN D1 CMPSH-3 C3 2.2nF 9 R1 120k 2 16 VP 15 VL ILIM BST COMP DH 13 LX DL VL GND U1 MAX1864T R2 100k 11 C5 0.1uF R3 3.3 R4 3.3 POK FB B2 4 5 R5 220 0.25W 6 R8 10.0k B3 C7 4.7uF 25V X5R L1 3.3uH DO5022P -332HC D2 EC31 QS03L 3 C10 47nF


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    PDF MAX1864T DO5022P -332HC QS03L 820uF KSH30 150mA TMK325BJ475MN 820uF 6MV820EXR 33272 33262 33272 -8 ceramic capacitor 22nf 25SC47M DO5022P EC31 KSH30 LMK212BJ105MG LMK325BJ106MN

    IC 7403

    Abstract: MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A
    Text: MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E1 B1 SOIC-16 E2 B2 E3 B3 E4 NMT2222 B4 C2 E1 C1 pin #1 C1 C2 C1 C3 C2 C4 C4 C3 B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch


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    PDF MMBT2222A PZT2222A OT-23 OT-223 MMPQ2222 SOIC-16 NMT2222 IC 7403 MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A

    Schottky Diode 5V 6A

    Abstract: Schottky Diode 40V 6A 1k ohm resistor FDS6690A resistor 15k 15k resistor resistor r7 1K 10MV1200AX capacitors 22nf 0805 10V CAPACITOR X7R 4.7UF
    Text: C3 4.7uF 10V +5V INPUT C5 1200uF 10V MV-AX D1 CMPSH-3 9 R1 15k C1 22nF 2 16 VP 15 VL BST ILIM COMP DH LX DL +5V GND 11 C4 0.1uF R3 4.7 R4 4.7 10 OUT 1 POK 3 R5 10.0k FB 4 B2 5 FB2 6 +1.24V B3 FB3 7 R7 220 C9 330pF R8 22.1k R9 22.1k +5V C8 1uF 10V Q3 CMPT 3906


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    PDF 1200uF 330pF QS03L FDS6690A DO5022P MAX1864T 1000pF Schottky Diode 5V 6A Schottky Diode 40V 6A 1k ohm resistor FDS6690A resistor 15k 15k resistor resistor r7 1K 10MV1200AX capacitors 22nf 0805 10V CAPACITOR X7R 4.7UF

    surface mount transistor A55

    Abstract: surface mount transistor A48 c60 equivalent CR0805 irf150 rd sot23 sn74ls574 sot223, 31 64 sot23 a36 AD30
    Text: P3V VIO P2 P1 NDA # VDD_PCI A1 1 P3V VIO VIO 1 B1 VDD_PCI A2 2 +12V_PCI A3 3 TCK A4 4 2 B2 TOOL1 3 B3 TMS X8 TDI X9 1 TDO 1 1 4 B4 A6 6 X7 A8 8 A9 9 X11 A10 10 1 X12 1 X10 7 B7 1 X50 12 B12 A13 13 13 B13 A14 14 14 B14 GNT# 18 B18 REQ# A19 19 19 B19 AD30 AD26


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    PDF CC0805 CR0805 NDT451AN CR1206 OT223 LM393M IRF150 surface mount transistor A55 surface mount transistor A48 c60 equivalent CR0805 irf150 rd sot23 sn74ls574 sot223, 31 64 sot23 a36 AD30

    2n2222 sot23

    Abstract: Z117 Z123 Diode diode z104 a105 transistor Z16 SOT23 2n2222 sot-23 c60 equivalent transistor z5 b49 diode
    Text: P3V VDD VIO VDD P2 P1 NDA # P3V A1 1 VIO VIO 1 B1 TRST# A2 2 TCK A3 3 A4 4 2 B2 TOOL1 3 B3 TMS TDO A5 5 C52 10 16V 2 7227 6 B6 INTA# A7 7 7 B7 X28 A8 8 A9 9 9 B9 10 B10 A11 11 11 B11 A12 12 12 B12 A13 13 13 B13 A14 14 14 B14 GNT# A19 19 19 B19 AD30 AD26 25 B25


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    PDF CC0805 2n2222 sot23 Z117 Z123 Diode diode z104 a105 transistor Z16 SOT23 2n2222 sot-23 c60 equivalent transistor z5 b49 diode

    surface mount transistor A48

    Abstract: CR0805 diode b26 8q diode sot23 AD11 AD30 MAGIC R30
    Text: P3V VIO P2 P1 NDA # VDD_PCI A1 1 P3V VIO VIO 1 B1 VDD_PCI A2 2 +12V_PCI A3 3 TCK A4 4 2 B2 TOOL1 3 B3 TMS X8 TDI X9 1 TDO 1 1 4 B4 A6 6 X7 A8 8 A9 9 X11 A10 10 C20 10 16V 2 7227 6 B6 INTA# A7 7 1 X12 1 X10 7 B7 1 X50 1 1 C19 5 B5 A5 5 1 C54 10 16V 2 7227 C53


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    PDF CC0805 AD250805 CR0805 NDT451AN OT223 surface mount transistor A48 CR0805 diode b26 8q diode sot23 AD11 AD30 MAGIC R30

    MAX5222

    Abstract: MAX5222EKA-T 8-pin DIN power supply
    Text: 19-1720; Rev 0; 4/00 Dual, 8-Bit, Voltage-Output Serial DAC in 8-Pin SOT23 The MAX5222’s ultra-low power consumption and tiny 8-pin SOT23 package make it ideal for portable and battery-powered applications. Supply current is less than 1mA and drops below 1µA in shutdown mode. In


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    PDF MAX5222 25MHz, MAX5222 MAX5222EKA-T 8-pin DIN power supply

    MAX5222

    Abstract: MAX5222EKA-T la sot23-8 analog b62r 300 ub3
    Text: 19-1720; Rev 0; 4/00 Dual, 8-Bit, Voltage-Output Serial DAC in 8-Pin SOT23 The MAX5222’s ultra-low power consumption and tiny 8-pin SOT23 package make it ideal for portable and battery-powered applications. Supply current is less than 1mA and drops below 1µA in shutdown mode. In


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    PDF MAX5222 25MHz, MAX5222 MAX5222EKA-T la sot23-8 analog b62r 300 ub3

    Untitled

    Abstract: No abstract text available
    Text: 19-1720; Rev 0; 4/00 Dual, 8-Bit, Voltage-Output Serial DAC in 8-Pin SOT23 The device uses a 3-wire serial interface, which operates at clock rates up to 25MHz and is compatible with SPI , QSPI™, and MICROWIRE™ interface standards. The serial input shift register is 16 bits long and consists of 8 bits of DAC input data and 8 bits for DAC


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    PDF 25MHz MAX5222â MAX5222

    bta 03

    Abstract: sa92
    Text: M OTO RO LA SC XSTRS/R 15E O I b3 b?2 S4 F QOâbüül T MAXIMUM RATINGS t Sym bol Rating MMBTA92L MMBTA93L Unit Coliector-Emitter Voltage VcEO 300 200 Vdc Collector-Base Voltage VCBO 300 200 Vdc Emitter-Base Voltage Veb o 5.0 Collector Current — Continuous


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    PDF MMBTA92L MMBTA93L MMBTA93L OT-23 O-236AB) BTA93L bta 03 sa92

    2N6426

    Abstract: No abstract text available
    Text: “Tb MOTOROLA SC -CXSTRS/R F3- 6367254 M OTO RO LA SC CXSTRS/R D if J b3 t ,7 2S H OGflEDSl S 96D F i 82051 7 21 5 - M A XIM U M RATINGS I i » I Sym bol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage


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    PDF MMBT6427 OT-23 O-236AA/AB) 2N6426

    BC846BL

    Abstract: BC847AL BC847CL 25CC BC846 BC846AL BC847 BC847BL BC848 BC848AL
    Text: I 15 E D M A X IM U M RATINGS b3 b? as 4 QOflSöflM 1 I Sym bol BC846 BC847 BC848 Unit Collector-Emitter Voltage VCEO 65 45 30 V Collector-Base Voltage V cB O 80 50 30 V Ve b o 6.0 6.0 5.0 V ic 100 100 100 mAdc Rating Emitter-Base Voltage Collector Current — Continuous


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    PDF BC846 BC847 BC848 BC848CL BC846BL BC847AL BC847CL 25CC BC846AL BC847BL BC848AL

    marking wh sot-23

    Abstract: BSR56 BSR56L BSR57 BSR57L BSR58 BSR58L BSR67 DIODES MARKING M5
    Text: M O T O R O L A SC XSTRS/R F 12E 0 | b3 t ? a S M O G a t t a ? 4 | M A X IM U M RATINGS Rating BSR56L' Symbol Value U nit Drain-Source Voltage —VDS 40 V Drain-Gate Voltage V dg 40 V thru Gate-Source Voltage Vg s 40 V Forward Gate Current 'G f 50 mA BSR58L


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    PDF BSR56L' BSR58L OT-23 O-236AB) BSR56L BSR67L BSR58L BSR56; marking wh sot-23 BSR56 BSR57 BSR57L BSR58 BSR67 DIODES MARKING M5