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    B3 SMD TRANSISTOR Search Results

    B3 SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    B3 SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking code B9 DG SMD

    Abstract: smd diode B3 SOT23 SMD z6 SMD CODE PACKAGE SOT23 489 MARKING 43 SOT23 REGULATOR SMD EK 742 BZX84C3v6 MARKING CODE SMD s1 sot23 BZX84B5V1 SOT23 NXP power dissipation TO-236AB
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BZX84 series Voltage regulator diodes Product data sheet Supersedes data of 1999 May 18 2003 Apr 10 NXP Semiconductors Product data sheet Voltage regulator diodes BZX84 series FEATURES PINNING • Total power dissipation: max. 250 mW


    Original     		PDF M3D088 BZX84 BZX84-A BZX84-C4V3 BZX84-C4V7 BZX84-C51 BZX84-C56 BZX84-C5V1 BZX84-C5V6 marking code B9 DG SMD smd diode B3 SOT23 SMD z6 SMD CODE PACKAGE SOT23 489 MARKING 43 SOT23 REGULATOR SMD EK 742 BZX84C3v6 MARKING CODE SMD s1 sot23 BZX84B5V1 SOT23 NXP power dissipation TO-236AB

    b3 smd transistor

    Abstract: smd transistor marking B3 SMD transistor b3 smd b3 smd transistor b2 smd transistor B4 SMD transistor B3 SOT23 2SC1621 smd ic marking b3 B3 marking transistor sot-23
    Text: Transistors IC SMD Type NPN Silicon Epitaxial Transistor 2SC1621 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High speed : tstg=20ns MAX. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01


    Original     		PDF 2SC1621 OT-23 -10mA b3 smd transistor smd transistor marking B3 SMD transistor b3 smd b3 smd transistor b2 smd transistor B4 SMD transistor B3 SOT23 2SC1621 smd ic marking b3 B3 marking transistor sot-23

    Zener diode smd marking code S3

    Abstract: SMD CODE MARKING s7 SOT23 Zener diode smd marking code 621 triac 214 215 216 BZX84C5V1 spice smd z70 smd diode B3 SOT23 Z3 marking Zener diode smd marking S4 SMD CODE PACKAGE SOT23 486
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BZX84 series Voltage regulator diodes Product data sheet Supersedes data of 1999 May 18 2003 Apr 10 NXP Semiconductors Product data sheet Voltage regulator diodes BZX84 series FEATURES PINNING • Total power dissipation: max. 250 mW


    Original     		PDF M3D088 BZX84 BZX84-A X84-C5V1 BZX84-C5V6 BZX84-C62 BZX84-C68 BZX84-C6V2 BZX84-C6V8 Zener diode smd marking code S3 SMD CODE MARKING s7 SOT23 Zener diode smd marking code 621 triac 214 215 216 BZX84C5V1 spice smd z70 smd diode B3 SOT23 Z3 marking Zener diode smd marking S4 SMD CODE PACKAGE SOT23 486

    520301006

    Abstract: Table of smd IC marking codes smd transistor marking A2 TRANSISTOR SMD MARKING CODES ESCC 5203/010 2N5154S1 st smd diode marking code NV SMD TRANSISTOR smd diode order marking code stmicroelectronics smd marking codes list
    Text: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Features BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 2 TO-39 TO-257 2 1 3 • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified


    Original     		PDF 2N5154HR O-257 2N5154HR O-257 520301006 Table of smd IC marking codes smd transistor marking A2 TRANSISTOR SMD MARKING CODES ESCC 5203/010 2N5154S1 st smd diode marking code NV SMD TRANSISTOR smd diode order marking code stmicroelectronics smd marking codes list

    STMicroelectronics smd marking code

    Abstract: smd transistor marking A2 TRANSISTOR SMD MARKING CODE A1 smd transistor marking B3 transistor smd marking 94 TRANSISTOR SMD MARKING CODES marking code 51 SMD Transistor st smd IC marking code NPN TRANSISTOR SMD MARKING CODE B2 TRANSISTOR SMD MARKING CODE d2
    Text: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Features BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 2 TO-39 TO-257 2 1 3 • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified


    Original     		PDF 2N5154HR O-257 2N5154HR O-257 STMicroelectronics smd marking code smd transistor marking A2 TRANSISTOR SMD MARKING CODE A1 smd transistor marking B3 transistor smd marking 94 TRANSISTOR SMD MARKING CODES marking code 51 SMD Transistor st smd IC marking code NPN TRANSISTOR SMD MARKING CODE B2 TRANSISTOR SMD MARKING CODE d2

    st smd diode marking code

    Abstract: smd diode order marking code stmicroelectronics TRANSISTOR SMD MARKING CODES ESCC 5204/002 smd transistor A1 2N5153HR marking SMD CODES NV SMD TRANSISTOR smd code book B3 transistor smd marking codes list
    Text: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Features BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 2 3 1 TO-257 TO-39 2 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■ ESCC qualified


    Original     		PDF 2N5153HR O-257 2N5153HR O-257 st smd diode marking code smd diode order marking code stmicroelectronics TRANSISTOR SMD MARKING CODES ESCC 5204/002 smd transistor A1 marking SMD CODES NV SMD TRANSISTOR smd code book B3 transistor smd marking codes list

    Untitled

    Abstract: No abstract text available
    Text: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet − production data Features BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 2 TO-39 3 1 TO-257 2 1 3 • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics


    Original     		PDF 2N5154HR O-257 2N5154HR O-257

    marking code 51 SMD Transistor

    Abstract: STMicroelectronics smd marking code st smd IC marking code smd transistor marking A2 smd transistor marking B3 SMD TRANSISTOR MARKING code TC NPN TRANSISTOR SMD MARKING CODE B2 TRANSISTOR SMD MARKING CODE A1 smd marking code stmicroelectronics ic smd 851
    Text: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet − production data Features BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 2 TO-39 TO-257 2 1 3 • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics


    Original     		PDF 2N5154HR O-257 2N5154HR O-257 marking code 51 SMD Transistor STMicroelectronics smd marking code st smd IC marking code smd transistor marking A2 smd transistor marking B3 SMD TRANSISTOR MARKING code TC NPN TRANSISTOR SMD MARKING CODE B2 TRANSISTOR SMD MARKING CODE A1 smd marking code stmicroelectronics ic smd 851

    Untitled

    Abstract: No abstract text available
    Text: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet − production data Features BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 2 3 1 TO-257 TO-39 2 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics


    Original     		PDF 2N5153HR O-257 2N5153HR O-257

    Untitled

    Abstract: No abstract text available
    Text: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet − production data Features BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 2 3 1 TO-257 TO-39 2 1 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics


    Original     		PDF 2N5153HR O-257 2N5153HR O-257 5204-y

    222259116641

    Abstract: 222259016629 bvc62 AN98013 BD139 transistor circuit diagram BLV589 c38 transistor RG4M UHF amplifier module BLV859
    Text: APPLICATION NOTE BLV859 UHF linear push-pull power transistor AN98013 Philips Semiconductors BLV859 UHF linear push-pull power transistor CONTENTS 1 ABSTRACT 2 INTRODUCTION 2.1 Amplifier Electrical design objectives 3 DESIGN OF THE AMPLIFIER 3.1 3.2 3.3 3.4


    Original     		PDF BLV859 AN98013 SCA57 222259116641 222259016629 bvc62 AN98013 BD139 transistor circuit diagram BLV589 c38 transistor RG4M UHF amplifier module

    TRANSISTOR SMD CODE PACKAGE SOT89

    Abstract: GHz PNP transistor BFQ149 smd transistor code B2 TRANSISTOR SMD CODE PACKAGE SOT89 4
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ149 PNP 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFQ149 PINNING PNP transistor in a SOT89 envelope.


    Original     		PDF BFQ149 MBK514 TRANSISTOR SMD CODE PACKAGE SOT89 GHz PNP transistor BFQ149 smd transistor code B2 TRANSISTOR SMD CODE PACKAGE SOT89 4

    Capacitor Tantal SMD

    Abstract: capacitor 0,1 k 250 mkt philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 1999 Jul 14 Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION


    Original     		PDF M3D427 BLF2048 OT539A) 125108/00/01/pp11 Capacitor Tantal SMD capacitor 0,1 k 250 mkt philips

    742-08-3-103-J-XX

    Abstract: TRANSISTOR SMD a43 B56 smd transistor smd transistor b35 transistor ld12 SmD TRANSISTOR a42 SmD TRANSISTOR a45 smd code book a56 transistor B38 SMD Transistor SmD TRANSISTOR a41
    Text: UM10009_3 ISP1362 PCI Evaluation Board User’s Guide March 2003 User’s Guide Rev. 3.0 Revision History: Rev. Date March 2003 3.0 2.0 July 2002 1.0 June 2002 Descriptions Added 6-page schematics at the end of the document • Updated Table 4-1, Section 4.6, Appendix A and


    Original     		PDF UM10009 ISP1362 10-Apr-2002 030701\Philips\ISP1362\Schematics\1362 0\1362pci 742-08-3-103-J-XX TRANSISTOR SMD a43 B56 smd transistor smd transistor b35 transistor ld12 SmD TRANSISTOR a42 SmD TRANSISTOR a45 smd code book a56 transistor B38 SMD Transistor SmD TRANSISTOR a41

    smd transistor A6 3

    Abstract: 5962R9671901TRC 5962R9671901TXC ACTS245DTR ACTS245KTR ACTS245T b3 smd transistor
    Text: ACTS245T Data Sheet July 1999 Radiation Hardened Octal Non-Inverting Bidirectional Bus Transceiver Intersil’s Satellite Applications FlowTM SAF devices are fully tested and guaranteed to 100kRAD Total Dose. These QML Class T devices are processed to a standard flow intended


    Original     		PDF ACTS245T 100kRAD ACTS245T MIL-PRF-38535 smd transistor A6 3 5962R9671901TRC 5962R9671901TXC ACTS245DTR ACTS245KTR b3 smd transistor

    5962F9862501V9A

    Abstract: 5962F9862501VCC 5962F9862501VXC ACS132HMSR-03 ACS132MS
    Text: ACS132MS Data Sheet Radiation Hardened Quad 2-Input NAND Schmitt Trigger The Radiation Hardened ACS132MS is a Quad 3-Input NAND Gate with Schmitt Trigger inputs. When any input to one of the gates is at a LOW level, the corresponding Y output will be HIGH. A HIGH level on both inputs will cause the output for that


    Original     		PDF ACS132MS ACS132MS 400mV 5962F9862501V9A 5962F9862501VCC 5962F9862501VXC ACS132HMSR-03

    CDFP3-F14

    Abstract: 5962F9863001V9A 5962F9863001VCC 5962F9863001VXC ACS27DMSR-03 ACS27HMSR-03 ACS27KMSR-03 ACS27MS
    Text: ACS27MS Data Sheet July 1999 File Number Radiation Hardened Triple 3-Input NOR Gate Features The Radiation Hardened ACS27MS is a Triple 3-Input NOR Gate. For each gate, a HIGH level on any input results in a LOW level on the Y output. A LOW level on all inputs


    Original     		PDF ACS27MS ACS27MS MIL-PRF-38535 CDFP3-F14 5962F9863001V9A 5962F9863001VCC 5962F9863001VXC ACS27DMSR-03 ACS27HMSR-03 ACS27KMSR-03

    b3 smd transistor

    Abstract: SMD Transistors nc b4 5962F9862401V9A 5962F9862401VCC 5962F9862401VXC ACS32DMSR-03 ACS32HMSR-03 ACS32KMSR-03 ACS32MS y4 smd transistor
    Text: ACS32MS Data Sheet November 1998 File Number Radiation Hardened Quad 2-Input OR Gate Features The Radiation Hardened ACS32MS is a Quad 2-Input OR Gate. For each gate, a HIGH level on either A or B input results in a HIGH level on the Y output. A LOW level on both


    Original     		PDF ACS32MS ACS32MS MIL-PRF-38535 b3 smd transistor SMD Transistors nc b4 5962F9862401V9A 5962F9862401VCC 5962F9862401VXC ACS32DMSR-03 ACS32HMSR-03 ACS32KMSR-03 y4 smd transistor

    5962F9860101V9A

    Abstract: 5962F9860101VCC 5962F9860101VXC ACS02DMSR-03 ACS02MS
    Text: ACS02MS Data Sheet November 1998 File Number Radiation Hardened Quad 2-Input NOR Gate Features The Radiation Hardened ACS02MS is a Quad 2-Input NOR Gate. For each gate, a HIGH level on either A or B input results in a LOW level on the Y output. A LOW level on both


    Original     		PDF ACS02MS ACS02MS MIL-PRF-38535 5962F9860101V9A 5962F9860101VCC 5962F9860101VXC ACS02DMSR-03

    smd transistor A6

    Abstract: SMD TRANSISTOR B7 5962R9671901TRC 5962R9671901TXC ACTS245DTR ACTS245KTR ACTS245T smd transistor A7 smd transistor A6 3
    Text: ACTS245T TM Data Sheet July 1999 Radiation Hardened Octal Non-Inverting Bidirectional Bus Transceiver Intersil’s Satellite Applications FlowTM SAF devices are fully tested and guaranteed to 100kRAD Total Dose. These QML Class T devices are processed to a standard flow intended


    Original     		PDF ACTS245T 100kRAD ACTS245T FN4611 MIL-PRF-38535 smd transistor A6 SMD TRANSISTOR B7 5962R9671901TRC 5962R9671901TXC ACTS245DTR ACTS245KTR smd transistor A7 smd transistor A6 3

    Capacitor Tantal SMD

    Abstract: Tantal SMD transistor SMD 2201
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 1999 Oct 18 Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION


    Original     		PDF M3D427 BLF2048 OT539A) 125108/00/01/pp12 Capacitor Tantal SMD Tantal SMD transistor SMD 2201

    5962F9862201V9A

    Abstract: 5962F9862201VCC 5962F9862201VXC ACS11MS
    Text: ACS11MS Data Sheet Radiation Hardened Triple 3-Input AND Gate The Radiation Hardened ACS11MS is a Triple 3-Input AND Gate. When all three inputs to one of the gates are at a HIGH level, the corresponding Y output will be HIGH. A LOW level on any input will cause the output for that gate to be


    Original     		PDF ACS11MS ACS11MS 5962F9862201V9A 5962F9862201VCC 5962F9862201VXC

    acs08 Transistor

    Abstract: acs08 5962F9565101V9A 5962F9565101VCC 5962F9565101VXC ACS08DMSR ACS08KMSR ACS08MS CDFP4-F14
    Text: ACS08MS Radiation Hardened Quad 2-Input AND Gate July 1998 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened ACS08MS is a Quad 2-Input AND Gate. For each gate, a HIGH level on both the A and B inputs results in a HIGH level on the Y output. A LOW level


    Original     		PDF ACS08MS MIL-PRF-38535 ACS08MS 25Micron acs08 Transistor acs08 5962F9565101V9A 5962F9565101VCC 5962F9565101VXC ACS08DMSR ACS08KMSR CDFP4-F14

    smd transistor ne c2

    Abstract: smd transistor zi capacitor MKT Philips capacitor 400 MKT philips SMD Capacitor symbols transistor smd Catalogue capacitor variable ceramic variable capacitor Tekelec TO aeg b2 60 52 30
    Text: DISCRETE SEMICONDUCTORS E>^m S ln lE E T BLF2048 UHF push-pull power LDMOS transistor Preliminary specification Supersedes data of 1999 Dec 01 Philips Sem iconductors 2000 Feb 17 PHILIPS Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor


    OCR Scan     		PDF BLF2048 OT539A smd transistor ne c2 smd transistor zi capacitor MKT Philips capacitor 400 MKT philips SMD Capacitor symbols transistor smd Catalogue capacitor variable ceramic variable capacitor Tekelec TO aeg b2 60 52 30