B2535L
Abstract: B2535L diode
Text: MBR2535CTL SWITCHMODE Power Rectifier . . . employing the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency
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MBR2535CTL
B2535L
B2535L diode
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b2535l
Abstract: B2535L diode B2535 B2535L 220 MBR2535CTL
Text: MBR2535CTL SWITCHMODE Power Rectifier . . . employing the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency
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MBR2535CTL
r14525
MBR2535CTL/D
b2535l
B2535L diode
B2535
B2535L 220
MBR2535CTL
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B2535LG
Abstract: aka B2535LG B2535L B2535L diode B2535L AKA B2535L 220 SCHOTTKY BARRIER RECTIFIER aka MBR2535CTL MBR2535CTLG
Text: MBR2535CTL SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 150°C Operating Junction Temperature 25 A Total 12.5 A Per Diode Leg Pb−Free Packages are Available*
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MBR2535CTL
B2535LG
aka B2535LG
B2535L
B2535L diode
B2535L AKA
B2535L 220
SCHOTTKY BARRIER RECTIFIER aka
MBR2535CTL
MBR2535CTLG
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b2535l
Abstract: B2535L diode B2535L 220
Text: MBRB2535CTL Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and
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MBRB2535CTL
b2535l
B2535L diode
B2535L 220
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B2535L
Abstract: B2535L diode B2535L 220
Text: MBR2535CTL SWITCHMODE Power Rectifier . . . employing the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency
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MBR2535CTL
1005C
B2535L
B2535L diode
B2535L 220
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B2535L diode
Abstract: b2535l B2535L 220 MBRB2535CTL MBRB2535CTLT4 SMD310
Text: MBRB2535CTL Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and
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MBRB2535CTL
MBRB2535CT/D
B2535L diode
b2535l
B2535L 220
MBRB2535CTL
MBRB2535CTLT4
SMD310
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B2535L diode
Abstract: b2535l
Text: MBRB2535CTL Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal
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MBRB2535CTL
MBRB2535CTL/D
B2535L diode
b2535l
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b2535l
Abstract: B2535 B2535L diode
Text: MBRB2535CTL Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal
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MBRB2535CTL
b2535l
B2535
B2535L diode
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B2535L
Abstract: MBR2535CTL MBR2535CTLG B2535L diode
Text: MBR2535CTL SWITCHMODEt Power Rectifier The MBR2535CTL employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency
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MBR2535CTL
MBR2535CTL
MBR2535CTL/D
B2535L
MBR2535CTLG
B2535L diode
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B2535G
Abstract: b2535 b2535l B2535L diode MBR2535CTL MBR2535CTLG SCHOTTKY BARRIER RECTIFIER aka
Text: MBR2535CTL SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 150°C Operating Junction Temperature 25 A Total 12.5 A Per Diode Leg Pb−Free Packages are Available*
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MBR2535CTL
MBR2535CTL/D
B2535G
b2535
b2535l
B2535L diode
MBR2535CTL
MBR2535CTLG
SCHOTTKY BARRIER RECTIFIER aka
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b2535l
Abstract: B2535L diode B2535L 220 MBRB2535CTL MBRB2535CTLT4 SMD310
Text: MBRB2535CTL Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and
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MBRB2535CTL
r14525
MBRB2535CTL/D
b2535l
B2535L diode
B2535L 220
MBRB2535CTL
MBRB2535CTLT4
SMD310
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B2535LG
Abstract: aka B2535LG b2535l B2535L diode b2535 B2535L AKA MBR2535CTLG MBR2535CTL
Text: MBR2535CTL SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 150°C Operating Junction Temperature 25 A Total 12.5 A Per Diode Leg Pb−Free Packages are Available*
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MBR2535CTL
MBR2535CTL/D
B2535LG
aka B2535LG
b2535l
B2535L diode
b2535
B2535L AKA
MBR2535CTLG
MBR2535CTL
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B2535LG
Abstract: aka B2535LG MBR2535CTLG
Text: MBR2535CTL SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 150°C Operating Junction Temperature 25 A Total 12.5 A Per Diode Leg Pb−Free Packages are Available*
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MBR2535CTL
MBR2535CTL/D
B2535LG
aka B2535LG
MBR2535CTLG
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b2535l
Abstract: B2535L diode MBR2535CTL
Text: MOTOROLA Order this document by MBR2535CTL/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifier MBR2535CTL . . . employing the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide
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MBR2535CTL/D
MBR2535CTL
b2535l
B2535L diode
MBR2535CTL
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aka B2535LG
Abstract: NRVBB2535CTLG
Text: MBRB2535CTLG, NRVBB2535CTLG Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal
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MBRB2535CTLG,
NRVBB2535CTLG
MBRB2535CTL/D
aka B2535LG
NRVBB2535CTLG
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b2535lg
Abstract: aka B2535LG b2535 B2535L B2535L diode MBRB2535CTL MBRB2535CTLG MBRB2535CTLT4 MBRB2535CTLT4G 2CW28
Text: MBRB2535CTL Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal
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MBRB2535CTL
MBRB2535CTL/D
b2535lg
aka B2535LG
b2535
B2535L
B2535L diode
MBRB2535CTL
MBRB2535CTLG
MBRB2535CTLT4
MBRB2535CTLT4G
2CW28
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B2535L
Abstract: B2535L diode B2535 MBRB2535CTL SMD310
Text: MOTOROLA Order this document by MBRB2535CTL/D SEMICONDUCTOR TECHNICAL DATA Data Sheet SWITCHMODE Power Designer's Rectifier MBRB2535CTL D2PAK Surface Mount Power Package Motorola Preferred Device The D2PAK Power Rectifier employs the Schottky Barrier principle in a large
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MBRB2535CTL/D
MBRB2535CTL
B2535L
B2535L diode
B2535
MBRB2535CTL
SMD310
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U840 diode motorola
Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
Text: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000 SCILLC, 2000 Previous Edition 1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in
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DL151/D
Nov-2000
r14525
U840 diode motorola
motorola u860 diode
DIODE u1560
b2045 aka
u1560 DIODE
u860 diode
u1560
diode U3J
U820 diode
fast recovery diode ses5001
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MBR2535CTL/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifier . . . employing the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide
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MBR2535CTL/D
21A-06
O-220AB)
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b2535l
Abstract: B2535
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switchmode Power Rectifier . . . employing the Schottky Barrier principle in a large m e ta i-to -s ilic o n power diode. S ta te -o f-th e -a rt geom etry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage,
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MBR2535CTL
b2535l
B2535
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B2535
Abstract: No abstract text available
Text: M O TO RO LA Order this document by MBR2535CTL/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifier . . employing the Schottky Barrier principle in a large m etal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide
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MBR2535CTL/D
R2535CTL/D
B2535
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Untitled
Abstract: No abstract text available
Text: , _ Ä SEMICONDUCTOR TECHNICAL DATA 1 Or der this document by m b rb 2 5 3 s c tl/d Designer’s Data Sheet SWITCHMODE™ Pow er R e c tifie r MBRB2535CTL D2PAK Surface Mount Power Package Motorola Preferred Device The D2pAK Power Rectifier employs the Schottky Barrier principle in a large
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MBRB2535CTL
MBRB2535CTL/D
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