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    B12 MARKING Search Results

    B12 MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8950303GC Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy
    54HC221AJ/883C Rochester Electronics LLC 54HC221AJ/883C - Dual marked (5962-8780502EA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy

    B12 MARKING Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    C541U

    Abstract: C541U-1E P-SDIP-52
    Text: Microcontrollers Errata Sheet 10 July 2001 / Release 1.5 Device: Stepping Code / Marking: Package: C541U-1E ES-B12 P-LCC-44 P-SDIP-52 This Errata Sheet describes the deviations from the current user documentation. The classification and numbering system is module oriented in a continual ascending sequence


    Original     		C541U-1E ES-B12 P-LCC-44 P-SDIP-52 C541U, C541U C541U-1E P-SDIP-52 PDF

    AXICOM IM03

    Abstract: AXICOM IM06 AXICOM IM02 axicom im07 AXICOM im41 AXICOM im42 axicom im01 IMC03 IM03D IM48I
    Text: THIS DRAWING IS A CONTROLLED DOCUMENT FOR TYCO ELECTRONICS CORPORATION IT IS SUBJECT TO CHANGE AND THE CONTROLLING ENGINEERING ORGANIZATION SHOULD BE CONTACTED FOR THE LATEST REVISION. LOC REVISIONS DIST HJ - P LTR B9 B10 B11 B12 DESCRIPTION DATE New IM48GR


    Original     		IM48GR IM61GR, IM42PNS IM41X, IMF61, IMB41C, IMB42C IM46CGR, IMF68HR 28APR2010 AXICOM IM03 AXICOM IM06 AXICOM IM02 axicom im07 AXICOM im41 AXICOM im42 axicom im01 IMC03 IM03D IM48I PDF

    C541U

    Abstract: C541U-1E
    Text: Semiconductor Group Microcontrollers Errata Sheet Sep 4, 1998 / Release 1.2 Device: Stepping Code / Marking: Package: C541U-1E ES-B12 P-LCC-44 P-SDIP-52 This Errata Sheet describes the deviations from the current user documentation. The classification and numbering system is module oriented in a continual ascending sequence


    Original     		C541U-1E ES-B12 P-LCC-44 P-SDIP-52 C541U, C541U C541U-1E PDF

    C541U

    Abstract: C541U-1E
    Text: Semiconductor Group Microcontrollers Errata Sheet Nov 19, 1998 / Release 1.3 Device: Stepping Code / Marking: Package: C541U-1E ES-B12 P-LCC-44 P-SDIP-52 This Errata Sheet describes the deviations from the current user documentation. The classification and numbering system is module oriented in a continual ascending sequence


    Original     		C541U-1E ES-B12 P-LCC-44 P-SDIP-52 C541U, C541U C541U-1E PDF

    7168-m

    Abstract: IM06D IM48I IM03D IMB03C IMC06C IM03P IMF61 IME06 IM42P
    Text: THIS DRAWING IS A CONTROLLED DOCUMENT FOR TYCO ELECTRONICS CORPORATION IT IS SUBJECT TO CHANGE AND THE CONTROLLING ENGINEERING ORGANIZATION SHOULD BE CONTACTED FOR THE LATEST REVISION. LOC REVISIONS DIST HJ - P LTR B9 B10 B11 B12 DESCRIPTION DATE New IM48GR


    Original     		IM48GR IM61GR, IM42PNS IM41X, IMF61, IMB41C, IMB42C IM46CGR, IMF68HR 28APR2010 7168-m IM06D IM48I IM03D IMB03C IMC06C IM03P IMF61 IME06 IM42P PDF

    Untitled

    Abstract: No abstract text available
    Text: 857217 742.5 MHz SAW filter Applications • • General purpose RF filters For B12/13 DL repeater applications SMP-12, 3.00 x 3.00 x 1.22 mm Product Features • • • • • • • • • • Functional Block Diagram Usable bandwidth 27 MHz High attenuation


    Original     		B12/13 SMP-12, PDF

    OTAX

    Abstract: 280-T001 SD-33476-181 SD-33476-161 MX150 USCAR 5 33486-1601
    Text: =?OUND FOR NNECTOR .EARANCE B23 ADDED DRAFT DIRECTION SYMBOL 088 -25-11 LATCH HEIGHT AT VIEW OF BACK ANGLE B19 ^DDED ¿X 0.8D5 I»IP20 |a|b|AT BASE 088 BLADE TERMINAL5 BLADE TERMINAL5 088 B16 ADDED|-G-| 088 B14 REMOVED SHORTING BAR NOTE -04-10 088 B12 ADDED NOTE 9


    OCR Scan     		280-T001) 20lAlBl K05HY 1-U-11 MX150 OTAX 280-T001 SD-33476-181 SD-33476-161 USCAR 5 33486-1601 PDF

    DIODE B12

    Abstract: B12 diode ERB12-02 Diode Mark B12 DIODE 1.0A 1000V ERB12-10 rectifier diode B12 b12 marking erb12 general purpose diode marking code -06
    Text: ERB12 1.0A (100V to 1000V / 1.0A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Features Marking Compact size, light weight High reliability Cathode mark Abridged type name General purpose rectifier applications N1 N1


    Original     		ERB12 ERB12-01 ERB12-02 ERB12-04 ERB12-06 ERB12-10 ERB12 DIODE B12 B12 diode ERB12-02 Diode Mark B12 DIODE 1.0A 1000V ERB12-10 rectifier diode B12 b12 marking general purpose diode marking code -06 PDF

    Untitled

    Abstract: No abstract text available
    Text: KEY POS. MARKING DATE CODE SEE TABLE #1 ri 1 _ _ j 7 i “ i L_ 1 CONTACT DFTATI NOTE 1. CONTACT PLATING CONTACT AREA: GOLD 0. If/m MIN. OVER PALLDIUM/NICKEL 9:1 1m MIN. TERMINAL AREA: GOLD UNDERPLATING: NICKEL 1 Aim MIN. 2. APPLICABLE CABLE O.D. : 3 - 3 . 5mm


    OCR Scan     		-0001C-B RMC-E15F4S-LC5-M RMC-E15F4S-LC5LG-M RMC-E15F4S-LC5 15MY- 46NYL0N UL94V-0 PDF

    Diode Mark B12

    Abstract: B12 diode DIODE B12 marking B12 diode ERB12-02 ERB12-06 ERB12 B12 mark diode marking code B12 DIODE ERB12
    Text: ERB12 1.0A (100V to 1000V / 1.0A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Features Marking Compact size, light weight High reliability Cathode mark Abridged type name General purpose rectifier applications N1 N1


    Original     		ERB12 ERB12-01 ERB12-02 ERB12-04 ERB12-06 ERB12-10 ERB12 Diode Mark B12 B12 diode DIODE B12 marking B12 diode ERB12-02 ERB12-06 B12 mark diode marking code B12 DIODE ERB12 PDF

    ERB12-02

    Abstract: Diode Mark B12 h2 marking general purpose diode marking code -06 ERB12-10
    Text: ERB12 1.0A (100V to 1000V / 1.0A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Features Marking Compact size, light weight High reliability Cathode mark Abridged type name General purpose rectifier applications N1 N1


    Original     		ERB12 ERB12-01 ERB12-02 ERB12-04 ERB12-06 ERB12-10 ERB12 Diode Mark B12 h2 marking general purpose diode marking code -06 ERB12-10 PDF

    microtherm b12

    Abstract: b12e GB14536 BU103 cantherm U-103 THERMAL MOTOR PROTECTOR UL3398 B12 N 024 L310
    Text: Thermal motor protector Temperature limiter Thermal cut-out B 12 13 Applications - Motors - Transformers - Coils - Electronics, sensors - Process Automation Benefits - Non-sensitive to current - High current rating up to 30A - Manifold executions - Special low current version


    Original     		B1212025AEDCC0E UL3398 microtherm b12 b12e GB14536 BU103 cantherm U-103 THERMAL MOTOR PROTECTOR UL3398 B12 N 024 L310 PDF

    microtherm b12

    Abstract: No abstract text available
    Text: Thermal m otor protector Tem perature lim iter Thermal cut-out Applications - M o to rs - T ra n s fo rm e rs - Coils Benefits - Non-sensitive to c u rre n t - High c u rre n t ratin g up to 3 0 A - M anifold executions - Special low c u rre n t version Technical data


    OCR Scan     		B12A12005AEDCCOE UL3398 2012/DEC microtherm b12 PDF

    AWG20

    Abstract: EN 60730 VDE THERMAL MOTOR PROTECTOR EN 50155 L320 transistor AWG18 L310 L350 L32* MARKING cantherm
    Text: Thermal motor protector Temperature limiter Thermal cut-out B 12 Applications - Motors - Transformers - Coils - Electronics, sensors Benefits - Non-sensitive to current - High current rating up to 30A - Manifold executions CANTHERM Technical data control type


    Original     		AWG20 AWG20 EN 60730 VDE THERMAL MOTOR PROTECTOR EN 50155 L320 transistor AWG18 L310 L350 L32* MARKING cantherm PDF

    DIODE B12

    Abstract: B12 DIODE marking B12 diode N-channel 500V mosfet B12 68 diode MARKING CODE mosfet high power diode 500v TSM8N50 DIODE B12 48 n-channel 250V power mosfet dpak
    Text: TSM8N50 500V N-Channel MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 0.85 @ VGS =10V 7.2 Features Block Diagram ● Low On-Resistance. ● High power and current handing capability.


    Original     		TSM8N50 O-251 O-252 TSM8N50CH 75pcs TSM8N50CP O-252 DIODE B12 B12 DIODE marking B12 diode N-channel 500V mosfet B12 68 diode MARKING CODE mosfet high power diode 500v TSM8N50 DIODE B12 48 n-channel 250V power mosfet dpak PDF

    Untitled

    Abstract: No abstract text available
    Text: P 0 S .1 3 m 1 8 . 6 6 17.07 2 -R 1 .6 i"- NOTE 1.CONTACT SEQUENCE CONTACT POS.No. 1,15 O TH ERS U L 3.8 2.9 &8 NOTHING 1 2 3 B B1 B2 B3 ± 0 ,0 5 . 4 3L3 I I I I A+mv 2 .4 RECOMMENDED P.C.B. LAYOUT 3 LTR. DATE MARKING I NOTE 3 APPLICABLE FEMALE CONNECTOR


    OCR Scan     		E15FBâ RMC-EA15MY-OM03-MB RMC-EA15MY-OM03-MB1 RMC-EA15MY-OM03-MB2 RMC-EA15MY-OM03-MB3 UL94V-0 RMC-EA15MY-OM03-MB( PDF

    U211

    Abstract: 617 connector 7201J1ZQE2 B-23 U213 U411 U415 7401J J92-J93
    Text: 7000 Series Rocker and Lever Handle Switches B 7201J1ZQE2 7101J62ZQE22 7301J1AV2BE2 7201J1V61BE2 models available, see page B-4. Easy Build-A-Switch Below is a complete listing of available options for 7000 SERIES ROCKER AND LEVER HANDLE SWITCHES. Build-A-Switch


    Original     		7201J1ZQE2 7101J62ZQE22 7301J1AV2BE2 7201J1V61BE2 MIL-STD-202F RS-186E U211 617 connector 7201J1ZQE2 B-23 U213 U411 U415 7401J J92-J93 PDF

    mosfet to92

    Abstract: mosfet to92 high current marking B12 diode TSM2N7000KCT-A3 low vgs mosfet to-92 TSM2N7000KCT
    Text: TSM2N7000K 60V N-Channel MOSFET TO-92 PRODUCT SUMMARY Pin Definition: 1. Source 2. Gate 3. Drain VDS V 60 Features RDS(on)(Ω) ID (mA) 5 @ VGS = 10V 100 5.5 @ VGS = 5V 100 Block Diagram ● Low On-Resistance ● ESD Protection ● High Speed Switching ●


    Original     		TSM2N7000K TSM2N7000KCT mosfet to92 mosfet to92 high current marking B12 diode TSM2N7000KCT-A3 low vgs mosfet to-92 PDF

    DIODE B12 51

    Abstract: DIODE B12 B12 DIODE ultra low igss pA mosfet DIODE B12 60 p-CHANNEL MOSFET P-Channel MOSFET code 1A P-Channel mosfet 25v sop8 mosfet marking B12 diode marking code B12
    Text: TSM9434 20V P-Channel MOSFET SOP-8 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain VDS V RDS(on)(mΩ) ID (A) 40 @ VGS = -4.5V -6.4 60 @ VGS = -2.5V -5.1 -20 Features Block Diagram ● Advance Trench Process Technology


    Original     		TSM9434 TSM9434CS DIODE B12 51 DIODE B12 B12 DIODE ultra low igss pA mosfet DIODE B12 60 p-CHANNEL MOSFET P-Channel MOSFET code 1A P-Channel mosfet 25v sop8 mosfet marking B12 diode marking code B12 PDF

    DIODE B12

    Abstract: No abstract text available
    Text: TSM4416D 30V Dual N-Channel MOSFET SOP-8 Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 PRODUCT SUMMARY VDS V 30 Features RDS(on)(mΩ) ID (A) 15 @ VGS = 10V 11 24 @ VGS = 4.5V 10 Block Diagram ●


    Original     		TSM4416D TSM4416DCS DIODE B12 PDF

    CJ1H-CPU65H

    Abstract: CJ1G-CPU42H CJ1G-CPU45H CJ1M-CPU22 CJ1G-CPU43H CJ1M-CPU12 CJ1W-IC101 CJ1G-CPU44H CJ1M-CPU13 cj1w-oc211
    Text: CJ1 SERIES Contents Smallest, Most Powerful Solution for Tomorrow’s Advanced Production Systems We shrank our most powerful programmable controller by 40% to fit industry’s most space-confined cabinets. All of Omron’s outstanding performance was retained in the process: That includes the mix of standard and special I/O


    Original     		B-108 CJ1G-CPU45H, CJ1H-CPU65H CJ1H-CPU66H CJ1G-CPU42H CJ1G-CPU43H CJ1G-CPU44H CJ1G-CPU45H CJ1M-CPU22 CJ1M-CPU12 CJ1W-IC101 CJ1M-CPU13 cj1w-oc211 PDF

    0118 transistor

    Abstract: 385 b12 TSA5888 TSA5888CY
    Text: TSA5888 Low Vcesat PNP Transistor SOT-89 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -50V BVCEO -40V IC -5.5A VCE SAT Features -175mV @ IC / IB = -3.5A / -175mA Ordering Information Adoption of FBET and MBIT processes. High current capacitance.


    Original     		TSA5888 OT-89 -175mV -175mA TSA5888CY OT-89 0118 transistor 385 b12 TSA5888 PDF

    TSM4513D

    Abstract: P-Channel mosfet 25v sop8 mosfet marking B12
    Text: TSM4513D Complementary Enhancement MOSFET SOP-8 MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 N-Channel 20 P-Channel -20 ID (A) 14 @ VGS = 4.5V 6 16 @ VGS = 2.5V


    Original     		TSM4513D TSM4513DCS TSM4513D P-Channel mosfet 25v sop8 mosfet marking B12 PDF

    npn 600v to92

    Abstract: NPN Transistor 600V TSC966 TRANSISTOR 0835 NPN Transistor TO92 300ma NPN 600V transistor NPN Transistor TO92 400V 300ma TSC966cw A3 SOT223 NPN Silicon Epitaxial Planar Transistor to92
    Text: TSC966 NPN Silicon Planar High Voltage Transistor TO-92 SOT-223 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO 600V BVCEO 400V IC 300mA VCE SAT Features ● ● Ordering Information High BVceo, BVcbo High current gain Structure ●


    Original     		TSC966 OT-223 300mA TSC966CT TSC966CW npn 600v to92 NPN Transistor 600V TSC966 TRANSISTOR 0835 NPN Transistor TO92 300ma NPN 600V transistor NPN Transistor TO92 400V 300ma A3 SOT223 NPN Silicon Epitaxial Planar Transistor to92 PDF