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    B1020A TRANSISTOR Search Results

    B1020A TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    B1020A TRANSISTOR Datasheets Context Search

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    B1020A transistor

    Abstract: No abstract text available
    Text: 2SB1020A TOSHIBA Transistor Silicon PNP Triple Diffused Type Darlington Power 2SB1020A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = −3 V, IC = −3 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A)


    Original     		2SB1020A 2SD1415A B1020A transistor PDF

    B1020A

    Abstract: No abstract text available
    Text: 2SB1020A TOSHIBA Transistor Silicon PNP Triple Diffused Type Darlington Power 2SB1020A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = −3 V, IC = −3 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A)


    Original     		2SB1020A 2SD1415A B1020A PDF

    B1020A

    Abstract: B1020A transistor 2SB1020A 2SD1415A
    Text: 2SB1020A TOSHIBA Transistor Silicon PNP Triple Diffused Type Darlington Power 2SB1020A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = −3 V, IC = −3 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A)


    Original     		2SB1020A 2SD1415A B1020A B1020A transistor 2SB1020A 2SD1415A PDF

    B1020A

    Abstract: 2SB1020A 2SD1415A
    Text: 2SB1020A TOSHIBA Transistor Silicon PNP Triple Diffused Type Darlington Power 2SB1020A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = −3 V, IC = −3 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A)


    Original     		2SB1020A 2SD1415A B1020A 2SB1020A 2SD1415A PDF