Untitled
Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum impedance 536 MHz Rated current ΔT = 20K DC Resistance Type Value Unit Tol. Z 240 Ω ±25% Z 460 Ω typ. IR RDC 200
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Untitled
Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum impedance 536 Rated current ΔT = 20K DC Resistance Type Value Unit Tol. Z 240 Ω ±25% Z 460 Ω typ. IR RDC 200 A max.
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Untitled
Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum impedance 536 MHz Rated current ΔT = 20K DC Resistance Type Value Unit Tol. Z 240 Ω ±25% Z 460 Ω typ. IR RDC 200
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Untitled
Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum impedance 536 MHz Rated current ΔT = 20K DC Resistance Type Value Unit Tol. Z 240 Ω ±25% Z 460 Ω typ. IR RDC 200
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Untitled
Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum impedance 536 MHz Rated current ΔT = 20K DC Resistance Type Value Unit Tol. Z 240 Ω ±25% Z 460 Ω typ. IR RDC 200
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Untitled
Abstract: No abstract text available
Text: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum impedance 536 Rated current ΔT = 20K DC Resistance Type Value Unit Tol. Z 240 Ω ±25% Z 460 Ω typ. IR RDC 200 mA
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M5K4164ANP
Abstract: M5K4164ANP-12 M5K4164ANP12
Text: MITSUBISHI LSIs M5K4164ANP-12, -15 6 5 5 3 6 -B IT 6 5 536-W O R D BY 1-BIT DYNAMIC RAM D ESC RIPTIO N PIN C O N F IG U R A T IO N (TOP VIEW ) This is a fa m ily o f 65 536-word by 1-bit dynamic RAMs, fabricated w ith the high performance N-channel silicongate
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M5K4164ANP-12,
536-word
16-pin
5K4164ANP-12,
M5K4164ANP
M5K4164ANP-12
M5K4164ANP12
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5K4164AND-12, -15 6 5 5 3 6 -B IT 6 5 536-W O R D BY &-BIT DYNAMIC RAM D E S C R IP T IO N P IN C O N F IG U R A T IO N (TO P V IE W ) This is a fa m ily o f 65 536-word by 1-bit dynamic RAMs, fabricated w ith the high performance N-channel silicongate
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M5K4164AND-12,
536-word
18-pin
536-BIT
164AND-12,
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gal programmer
Abstract: TCO-214 isplsi1016 opa 2143
Text: 4LE D LATTICE SEMICO ND UCTOR ispLSr 1016 ü iL a ttic e in*system programmable Large Scale Integration •■■■I Feature 536^4= 1 GQOlShE b « L A T - 7 ^ ? é ~ i? -0 7 7"e73 iiOam
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048x45Â
84-Pin
120-Pin
gal programmer
TCO-214
isplsi1016
opa 2143
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on 2518 transistor
Abstract: transistor BU 536 transistor BC 536 C 3311 transistor 536 transistor T-33-11
Text: TELEFUNKEN ELECTRONIC 17E D • Ô ^ Ü O T b 000e]Liö3 3 ■ ALG6 • BU 536 'ïTifLf FMKdM electronic CreativeTecbnotojpe* T-33-11 Silicon NPN Power Transistor Applications: Switching mode power supply Features: • In triple diffusjon technique • Short switching time
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T-33-11
15A3DIN
on 2518 transistor
transistor BU 536
transistor BC 536
C 3311 transistor
536 transistor
T-33-11
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choke marking nb 03
Abstract: SOT121 Package BLF246
Text: Philips Semiconductors a tiS 3 R 3 1 0 0 5 TRÔD 536 APX Product specification VHF power MOS transistor BLF246 b'ìE i> N AUER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability
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Q05TRÃ
BLF246
OT121
OT121
/CA93V
choke marking nb 03
SOT121 Package
BLF246
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Untitled
Abstract: No abstract text available
Text: DS1986 PRELIMINARY DS1986 64K bit Add-O nly iButton SPECIAL FEATURES COMMON [ B u t t o n FEATURES • 6 5 536-bits Electrically Program m able Read O nly Memory EPROM communicates with the econom y of one signal plus ground • Unique, factory-lasered and tested 6 4 -b it registra
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DS1986
DS1986
536-bits
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD431016L 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT Description The //PD431016L is a high speed, lo w pow er, 1, 048, 576 b its 65, 536 w o rd s by 16 b its CMOS s ta tic RAM. O p e ra tin g s u p p ly vo lta g e is 3.3 V ± 0.3 V.
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PD431016L
64K-WORD
16-BIT
//PD431016L
/iPD431016L
44-pin
431016LLE-A
PD431016LLE-A20
/iPD431016L.
/PD431016LLE:
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K4164
Abstract: 5k4164 block stsu 536-WORD RAC120 M5K4116P msk4164 M5K4164AND-12 M5K4164AND-15 K4164A
Text: M ITSU B ISH I L S Is M5K4164AND-12, -15 6 5 5 3 6 -B IT 6 5 536-W O RD B Y 1-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a fa m ily o f 6 5 5 3 6 -w o rd b y 1-bit d y n a m ic RAM s, fa b ric a te d w ith the high pe rform ance N-channel silicongate
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M5K4164AND-12,
536-BIT
536-WORD
18-pin
M5K4164AND
K4164
5k4164
block stsu
RAC120
M5K4116P
msk4164
M5K4164AND-12
M5K4164AND-15
K4164A
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Untitled
Abstract: No abstract text available
Text: LATTICE SEMIC ON DU CT OR 4bE D 536 ^4=1 aQQlSb2 b » L A T ispLS r 1016 illL a ìtic e in*system programmable Large Scale Integration •■■■I Feature ■ - 7~?é~ff-07 iiOam Functional Block; Diagrarri'»^^- m • In-system programmable HIGH DENSITY LOGIC
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ff-07
44-Pin
68-Pin
T-fO-20
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M5K4164AL-12
Abstract: M5K4164AL-15 CSH120 M5K4164
Text: M ITSUBISHI L SIs M5K4164AL-12, -15 6 5 5 3 6 -B IT 6 5 536-W O RD BY 1-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a fa m ily o f 6 5 5 3 6 -w o rd b y 1 -b it d y n a m ic RAM s, fa b ric a te d w ith th e high p e rfo rm a n ce N -channel silicongate
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M5K4164AL-12,
536-BIT
536-WORD
16-pin
M5K4164AL
M5K4164AL-12
M5K4164AL-15
CSH120
M5K4164
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH6404AD1-15 2 6 2 1 4 4 -B IT 6 5 536-W O RD B Y 4-B IT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M H 6 4 0 4 A D 1 is 65 5 3 6 -w o rd x 4 b it d y n a m ic R A M and consists o f fo u r in d u s try standard 64 K x 1 d y n a m ic R AM s
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MH6404AD1-15
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D431016LE
Abstract: HART3 d431016 IC-3243 MARKING TP NEC 431016LE-1
Text: MOS INTEGRATED CIRCUIT juPD431016 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT Description T h e /JPD431016 is a h ig h speed, lo w p o w e r, 1 048 576 b its 65 536 w o rd s by 16 b its C M O S s ta tic R A M . T h e /iP D 431016 are packed in 4 4 -pin p la s tic SOJ.
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uPD431016
64K-WORD
16-BIT
/JPD431016
041t8
b427525
00b43G3
PD431016
431016LE
00b4304
D431016LE
HART3
d431016
IC-3243
MARKING TP NEC
431016LE-1
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mcm6665
Abstract: mk4564 M5K4164ANP-12 M5K4164ANP-15 mcm-6665 mcm6665 MOTOROLA m5k4164anp mostek mk4564 M5K4116P K4164ANP-15
Text: M IT S U B IS H I LSIs M 5 K 4 1 6 4 A N P -1 2 , -1 5 6 5 5 3 6 - B IT 6 5 5 3 6 -W O R D B Y 1 -B IT D Y N A M IC R A M DESC RIPTIO N PIN C O N F IG U R A T IO N {TOP VIEW ) This is a fa m ily of 65 536-word by 1-bit dynamic RAMs, fabricated w ith the high performance N-channel silicongate
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M5K4164ANP-12,
536-BIT
536-WORD
16-pin
M5K4164ANP
M5K4164AN
mcm6665
mk4564
M5K4164ANP-12
M5K4164ANP-15
mcm-6665
mcm6665 MOTOROLA
mostek mk4564
M5K4116P
K4164ANP-15
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M5K4164
Abstract: M5K4164ANL12 M5K4164ANL-12 recoma M5K4164ANL-15
Text: M IT S U B IS H I LSIs M 5 K 4 164ANL-12, -15 6 5 5 3 6 -B IT 6 5 536-W O R D BY 1-B IT DYNAMIC RAM D ESCRIPTIO N PIN C O N F IG U R A T IO N (TOP VIEW ) This is a fa m ily o f 65 5 3 6 -w o rd b y 1 -b it d y n a m ic RAM s, fa b ric a te d w ith th e high p e rform ance N -channel silicongate
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M5K4164ANL-12,
536-BIT
536-WORD
16-pin
M5K4164ANL
M5K4164
M5K4164ANL12
M5K4164ANL-12
recoma
M5K4164ANL-15
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5K4164ANL-12, -15 « 5 5 3 6 -B IT 6 5 5 36-W O R D BY 1-BIT DYNAMIC RAM D ESCRIPTIO N PIN C O N F IG U R A T IO N (TOP VIEW ) This is a fa m ily o f 65 536-word by 1-bit dynamic RAMs, fabricated w ith the high performance N-channel silicongate
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M5K4164ANL-12,
536-word
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH6408AD-15 5 2 4 2 8 8 -B IT 6 5 536-W O RD BY 8-BIT DYNAMIC RAM D E S C R IP T IO N The MH6408AD is 65536 word x 8 bit dynamic RAM and consists of eight industry standard 64K x 1 dynamic RAMs in leadless chip carrier. The mounting of leadless chip carriers on a ceramic
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MH6408AD-15
MH6408AD
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Untitled
Abstract: No abstract text available
Text: SEC /¿PD27C512G/G 5 2 4 2 8 8 B IT C M O S ONE T IM E PR O M DESCRIPTION The fiP027C512C/G is a 524 288 bit 65 536 x 8 bit one tim e programmable read-oniy memory (OT PROM). It operates from a single +5 V power supply, making it ideal for microprocessor applications. It is fabricated using an
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uPD27C512G/G
fiP027C512C/G
mPD27CS1
28-pin-
PD27C512C/G
28-pin
538-words
MPD27C512C/G--15)
jiP027C512C/G
1001J
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d431016
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /xPD 431016 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT D e s c rip tio n T h e /j P D 431016 is a high sp eed , low pow er, 1 048 576 bits 65 536 w o rd s by 16 b its C M O S static R A M . T h e ¿/PD431016 are packed in 44-pin p lastic S O J .
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64K-WORD
16-BIT
uPD431016
44-pin
091tg
iPD431016.
d431016
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