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    B-35 TRANSISTOR Search Results

    B-35 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    B-35 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IF3602

    Abstract: transistor b35 B-35 transistor NJ3600L 03nv B35 equivalent
    Text: Databook.fxp 1/13/99 2:09 PM Page B-35 B-35 01/99 IF3602 Dual N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier Absolute maximum ratings = TA at 25¡C Reverse Gate Source Voltage & Gate Drain Voltage Continuous Forward Gate Current


    Original     		PDF IF3602 NJ3600L IF3602 transistor b35 B-35 transistor NJ3600L 03nv B35 equivalent

    EIA-530A

    Abstract: RS-449 SP322
    Text: SP322 Programmable V.11/V.35 Transceiver 36 34 35 37 38 39 40 41 42 1 33 2 32 3 31 4 30 5 29 28 6 SP322 7 8 27 26 22 21 20 19 18 17 T1OUT a T1OUT(b) GND VCC T2OUT(a) T2OUT(b) GND VCC T3OUT(a) T3OUT(b) GND V.11/V.35 V.11_TERM SD VCC C1+ VDD C2+ GND C1–


    Original     		PDF SP322 SP322DS/06 SP322 EIA-530A RS-449

    EIA-530A

    Abstract: RS-449 SP322
    Text: SP322 Programmable V.11/V.35 Transceiver 36 34 35 37 38 39 40 41 42 1 33 2 32 3 31 4 30 5 29 28 6 SP322 7 8 27 26 22 21 20 19 18 17 T1OUT a T1OUT(b) GND VCC T2OUT(a) T2OUT(b) GND VCC T3OUT(a) T3OUT(b) GND V.11/V.35 V.11_TERM SD VCC C1+ VDD C2+ GND C1–


    Original     		PDF SP322 SP322DS/06 SP322 EIA-530A RS-449

    ta-12 stancor

    Abstract: B20000 Ta57 stancor
    Text: I M P E D A N C E M A T C H I N G T R A N S F O R M E R S Transistor Transformers Style B STANCOR PART Sec. NUMBER Style A Impedance Ohms Pri. Sec. TAPC-35 B TAPC-38 B 500 C.T. TA-21 C 500 C.T. TA-35 C TA-38 C 500 C.T. B TA-3 A 100 C TA-42 A 500 C.T. TA-52


    Original     		PDF TAPC-35 TAPC-38 TA-21 TA-35 TA-38 TA-42 TA-52 TAPC-52 TAPC-63 TA-39 ta-12 stancor B20000 Ta57 stancor

    MRA1014-35

    Abstract: MRA1014
    Text: MRA1014-35 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .320 SQ 2L FLG The ASI MRA1014-35 is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications From 1.0 GHz to 1.4 GHz. C B FEATURES: • Diffused Ballast Resistors.


    Original     		PDF MRA1014-35 MRA1014-35 28AXIMUM MRA1014

    VN0540

    Abstract: No abstract text available
    Text: VN0540 E – ET L O S B O – VN0535 VN0540 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-39 TO-92 Die† 350V 35Ω 250mA VN0535N2 VN0535N3 VN0535ND 400V 35Ω 250mA —


    Original     		PDF VN0540 VN0535 VN0540 250mA 250mA VN0535N2 VN0535N3 VN0540N3 VN0535ND VN0540ND

    Transistor hFE CLASSIFICATION Marking CE

    Abstract: KTA1505S KTC3876S hFE CLASSIFICATION Marking 24
    Text: SEMICONDUCTOR KTA1505S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ᴌExcellent hFE Linearity ᴌComplementary to KTC3876S. H 1 P Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage


    Original     		PDF KTA1505S KTC3876S. -400m Transistor hFE CLASSIFICATION Marking CE KTA1505S KTC3876S hFE CLASSIFICATION Marking 24

    hFE CLASSIFICATION Marking 24

    Abstract: KTA1505S KTC3876S
    Text: SEMICONDUCTOR KTC3876S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ᴌExcellent hFE Linearity ᴌComplementary to KTA1505S. H 1 P Collector-Base Voltage VCBO 35 V Collector-Emitter Voltage


    Original     		PDF KTC3876S KTA1505S. 400mA. 100mA 400mA 100mA, 25Min. 40Min. hFE CLASSIFICATION Marking 24 KTA1505S KTC3876S

    KTA1505S

    Abstract: KTC3876S
    Text: SEMICONDUCTOR KTA1505S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ・Excellent hFE Linearity ・Complementary to KTC3876S. H 1 P Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage


    Original     		PDF KTA1505S KTC3876S. -400mA. KTA1505S KTC3876S

    PT 1132

    Abstract: LF400A STA335A
    Text: Power Transistor Array STA335A ICBO IEBO VCEO hFE VCE sat Es/b (Ta=25ºC) Unit µA µA V Ratings 10max 10max 35±5 500min 0.5max 150min External Dimensions STA3 (LF400A) 20.2±0.2 V mJ b 9.0±0.2 Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.5A


    Original     		PDF STA335A 10max 500min 150min LF400A) PT 1132 LF400A STA335A

    LF400A

    Abstract: No abstract text available
    Text: Power Transistor Array STA335A ICBO IEBO VCEO hFE VCE sat Es/b (Ta=25ºC) Unit µA µA V Ratings 10max 10max 35±5 500min 0.5max 150min External Dimensions STA3 (LF400A) 20.2±0.2 V mJ b 9.0±0.2 Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.5A


    Original     		PDF STA335A 10max 500min 150min LF400A) LF400A

    transistor BUZ 40

    Abstract: C67078-S1305-A4
    Text: SIPMOS Power Transistor BUZ 40 B ● N channel ● Enhancement mode ● Avalanche-rated Type VDS ID RDS on Package 1) Ordering Code BUZ 40 B 500 V 8.5 A 0.8 Ω TO-220 AB C67078-S1305-A4 Maximum Ratings Parameter Symbol Values Continuous drain current, TC = 35 ˚C


    Original     		PDF O-220 C67078-S1305-A4 transistor BUZ 40 C67078-S1305-A4

    LF400A

    Abstract: STA335A 10T25 IC 122
    Text: Power Transistor Array STA335A ICBO IEBO VCEO hFE VCE sat Es/b (Ta=25ºC) Unit µA µA V Ratings 10max 10max 35±5 500min 0.5max 150min External Dimensions STA3 (LF400A) 20.2±0.2 V mJ b 9.0±0.2 Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.5A


    Original     		PDF STA335A 10max 500min 150min LF400A) LF400A STA335A 10T25 IC 122

    FO-102

    Abstract: ODU microwave PZB16050U
    Text: 70 RF/Microwave Devices M icrow ave Transistors, Continuous Power Package Outline Pi 111 _ Type No. cont. f (GHz) Gp (dB) (%) 8 8.5 8 7 6.8 7 5.6 6 7 45 45 45 45 35 35 35 35 40 tie CLASS B, HIGH POWER (cont.) PZB16035U PZB16050U PLB16012U PLB16030U PZ1721B12U


    OCR Scan     		PDF PZB16035U PZB16050U PLB16012U PLB16030U PZ1721B12U PZ1721B25U PZ2024B10U PZ2024B20U PZ2327B15U FO-57C FO-102 ODU microwave

    Q62702-U112

    Abstract: Q62901-B11-A Q62901-B50 transistor 7g
    Text: Nicht für Neuentwicklung ISIPN-Silizium-Leistungstransistor B U Y 35 BUY 35 ist ein einfachdiffundierter NPN-Silizium-Leistungs-Transistor im Gehäuse 3 A2 DIN 41 872 TO-3 . Der Transistor eignet sich besonders für den Einsatz als Schalter bei höheren Spannungen.


    OCR Scan     		PDF Q62702-U112 Q62901-B11-A Q62901-B50 Q62702-U112 Q62901-B11-A Q62901-B50 transistor 7g

    PN4416

    Abstract: BH RV transistor PN4416A
    Text: Philips Semiconductors B i b b 5 3 ^ 31 □ D 5 0 7 3 b 0 3 M A P X N-channel field-effect transistor PN4416; PN4416A AMER PHIL IPS/DISCRETE FEATURES Product specification b?E QUICK REFERENCE DATA MIN. MAX. UNIT PN4416 - 30 V PN4416A - 35 V Idss drain current


    OCR Scan     		PDF DP5HO73 PN4416; PN4416A PN4416 PN4416 BH RV transistor PN4416A

    BT 816 transistor

    Abstract: PA 1515 transistor 9921 transistor
    Text: Philips Semiconductors bb£ 3 R 31 Q Q 35 Q b b SR? ^ B A P X _ Product specification NPN 9 GHz wideband transistor BFS540 N AMER PHILIPS/DISCRETE FEATURES PINNING PIN CONFIGURATION PIN • High power gain DESCRIPTION _ EL Code: N4 • Low noise figure


    OCR Scan     		PDF BFS540 OT323 OT323 OT323. BT 816 transistor PA 1515 transistor 9921 transistor

    STA5050

    Abstract: STA3878 2n389 2N3054 2N3441 STA3879 STC40250 STC40310 STC40312 STC40324
    Text: Silicon power transistors NPN TO-66 = 1.0 to 7.0 A Type# 2N3054 STC40250 STC40310 STC40312 STC40316 STC40324 Typical Values VcEOISUS Volts) 55 40 35 60(Vcer) 40(Vcer) 35 @ Ic/VcE (Min-Max @ A/V) Vbe @ Ic/VcE (V @ A/V) VcE(SAT) @ Ic/ I b (V @ A/A) fT = 0.75 to 60 MHz


    OCR Scan     		PDF 2N3054 STC40250 STC40310 STC40312 STC4031E 20-1lts) 2N389 2N389A 2N424 STA5050 STA3878 2N3441 STA3879 STC40324

    KD22450510

    Abstract: kd2245 kd221K 3150 transistor
    Text: Z ^ b ¿ l POWEREX INC 50 Amperes 4 5 0 /1 OOO Volts T b P E |7 B ^ b g l 0000^55 1 W ^ r T-33-35 Dual Darlington TRANSISTOR Modules Dim A B C D E F G H K M Inches 3.700 Max 3.150+ .020 .79 1.34 Max 1.06 .315 1.220 Max .256 .571 Millimeters 94 Max 80 ± 0 .5


    OCR Scan     		PDF T-33-35 M5-10 31-Max Applica22450510 KD221K0510 KD22450510 KD22450510 kd2245 kd221K 3150 transistor

    Untitled

    Abstract: No abstract text available
    Text: TABLE OF CONTENTS A ADAPTERS, B N C . 70 ALLIGATOR C L IP S . 35 AUDIO J A C K S . 68 AUTOMOTIVE BLADE FUSE CLIPS & H O LD ERS. 28 B BATTERY CONTACTS & CLIPS


    OCR Scan     		PDF

    BUZ 835

    Abstract: No abstract text available
    Text: SIEMENS BUZ 307 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated BUZ 307 CO Type 800 V b 3A ^bs on 3 Í1 Package Ordering Code TO-218AA C67078-S3100-A2 Maximum Ratings Parameter Symbol Continuous drain current Values b 7C = 35 °C


    OCR Scan     		PDF O-218AA C67078-S3100-A2 O-218AA BUZ 835

    J425

    Abstract: 15J20
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F1002M A M R F1002M B The RF Line M icrowave Pulse Power Transistors . . . designed for Class B and C common base am plifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc


    OCR Scan     		PDF F1002M MRF1002MA MRF1002MB J425 15J20

    Untitled

    Abstract: No abstract text available
    Text: A va ila b le as: VOLTAGE CONTROLLED OSCILLATOR TOM9331 TOM9331, 4 Pin TO-8 T4 TON9331, 4 Pin Surface Mount (SM3) B X09331, Connectorized Housing (H1) 1725-1790 M H z Features • ■ ■ ■ Low Noise Bipolar Transistor Linear Tuning Operating Case Temp. -35 °C to + 60 °C


    OCR Scan     		PDF OM9331 OM9331, ON9331, X09331,

    LAS6330

    Abstract: LAS6331P1 6330 LAS6331 24v to 5V 3A converter LAS6330P1 6331P1 6330A LAS63
    Text: A LAMBDA SWITCHING REGULATORS LAS 6330 SERIES 3 AMP SWITCHING REGULATORS ABSOLUTE MAXIMUM RATINGS PA RA M ET ER SY M B O L M A X IM U M UNITS Volts 35 O utput Collector Voltage C0 35 Volts Power Dissipation Pd Internally Limited Watts I I Control C ircuit Voltage


    OCR Scan     		PDF LAS6330, LAS6330P1, 6331P1 113-Jâ LAS6330 LAS6331 LAS6330P1 LAS6331P1 LAS6330 LAS6331P1 6330 LAS6331 24v to 5V 3A converter LAS6330P1 6331P1 6330A LAS63