Untitled
Abstract: No abstract text available
Text: 1140 Cord Sets www.schurter.com/pg07_2 OU T Power Supply Cord with NEMA 5-15 Power Mains Plug 3-pole, Angled North America NEMA 5-15 Description Weblinks Power Supply Cord, Protection class I, Pin temperature 70 °C, Cable Approvals - UL File Number: E45116
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com/pg07
E45116
min/50â
3x18AWG
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NB-DIO-96
Abstract: 63E-1 VXI-DIO-128 AT-MIO-16XE-10 am 9513 timer PC-TIO-10 CBB68 PC-OPDIO-16 Photoelectric proximity sensor SCXI 8-channel LVDT Input Module
Text: Data Acquisition Overview A Guide to Selecting the Appropriate DAQ Products Overview Introduction National Instruments manufactures a wide selection of DAQ products for developing virtual instrument solutions. These solutions measure and control a wide range of signals
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DAQCard-DIO-24
NB-MIO-16
NB-MIO-16X
NB-A2000
NB-A2100/A2150
NB-DIO-32F
NB-DIO-96
NB-DIO-24
NB-TIO-10
NEC-MIO-16E-4
NB-DIO-96
63E-1
VXI-DIO-128
AT-MIO-16XE-10
am 9513 timer
PC-TIO-10
CBB68
PC-OPDIO-16
Photoelectric proximity sensor
SCXI 8-channel LVDT Input Module
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EL34 application notes
Abstract: CIRCUIT WITH EL34 application notes EL34 circuit EL34 DL140 MC100EL34 MC10EL34
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA ÷2, ÷4, ÷8 Clock MC10EL34 Generation Chip MC100EL34 The MC10/100EL34 is a low skew ÷2, ÷4, ÷8 clock generation chip designed explicitly for low skew clock generation applications. The internal dividers are synchronous to each other, therefore, the common
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MC10EL34
MC100EL34
MC10/100EL34
DL140/D)
DL140
MC10EL34/D*
MC10EL34/D
EL34 application notes
CIRCUIT WITH EL34 application notes
EL34 circuit
EL34
MC100EL34
MC10EL34
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Untitled
Abstract: No abstract text available
Text: M383L6423CT1 184pin Registered DDR SDRAM MODULE 512MB DDR SDRAM MODULE 64Mx72(32Mx72*2 bank based on 32Mx8 DDR SDRAM) Registered 184pin DIMM 72-bit ECC/Parity Revision 0.1 Dec. 2001 Rev. 0.2 Jan. 2002 M383L6423CT1 184pin Registered DDR SDRAM MODULE Revision History
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M383L6423CT1
184pin
512MB
64Mx72
32Mx72
32Mx8
72-bit
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M34559G6FP
Abstract: No abstract text available
Text: 4500 07-Dec-07 Evaluation of Subsystem Clock Oscillation Circuit [M34559G6FP-52P] LQFP 10x10 0.65mm pitch Measurement conditions :5.0V,3.0V Model Vcc=1.8V to 5.5V :SP-T2A Frequency :Fo=32.768kHz Frequency tolerance :dF/Fo= +/-20x10-6 Load capacitance :CL=12.5pF
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07-Dec-07
M34559G6FP-52P]
10x10)
768kHz
/-20x10-6
1x10-6W
M34559G6FP
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DL140
Abstract: LVE222 MC100LVE222 MR1040
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Voltage 1:15 Differential ÷1/÷2 ECL/PECL Clock Driver The MC100LVE222 is a low voltage, low skew 1:15 differential ÷1/÷2 ECL fanout buffer designed with clock distribution in mind. The device features fully differential clock paths to minimize both device and system
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MC100LVE222
LVE222
MC100LVE222/D*
MC100LVE222/D
DL140
MR1040
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MAH3080
Abstract: MAH3082
Text: Product Data Sheet Acrich2 – 13W Integrated AC LED Solution Acrich2 – 13W SMJE-XV12W1P3 MacAdam 3-Step RoHS Product Brief Description Features and Benefits • • • • • • • • • • • The Acrich2 series of products are designed to be driven directly off of AC
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SMJE-XV12W1P3
MAH3080
MAH3082
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Untitled
Abstract: No abstract text available
Text: 1008 CHIP INDUCTORS Chip Inductors for Critical Applications ST413RAA • HighSRFandexcellentQvalues • Tighttolerances,manyvaluesat1% • 28inductancevaluesfrom10nHto1µH Current Derating 120
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ST413RAA
CCF858à
ST101-2
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ACRICH DT3001B
Abstract: No abstract text available
Text: Product Data Sheet Acrich2 – 13W Integrated AC LED Solution Acrich2 – 13W SMJE-XV12W2P3 MacAdam 3-Step RoHS Product Brief Description Features and Benefits • • • • • • • • • • • The Acrich2 series of products are designed to be driven directly off of AC
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SMJE-XV12W2P3
ACRICH DT3001B
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Untitled
Abstract: No abstract text available
Text: 1008 CHIP INDUCTORS High-Reliability Chip Inductors MS413RAA Current Derating • High SRF and excellent Q values • Tight tolerances, many values at 1% • 28 inductance values from 10 nH to 1 µH 120 120 100 90 80 70 60 50 40 30 100 20 100 47 nH 10 90
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MS413RAA
MS413RAA
CCF858
MS101-2â
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diode k 1140
Abstract: diode 725 diode e 1140
Text: rilCROPAC IN D U S T R IE S IN C 4EE D Hi b lia m o DOQQIOH fl E l D P I GaAs LIGHT-EMITTING DIODE “ PILL PACK” 62000 TYPE GS 1140 "T H M ! * HIGH INTENSITY GaAIAs VERSIONS AVAILABLE M IN IA T U R E HIG H E F F IC IE N C Y LED G LA S S /C E R A M IC /K O V A R H E R M E T IC PACKAG E
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MIL-S-19500.
diode k 1140
diode 725
diode e 1140
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DIODE REDRESSEMENT 4040
Abstract: RP 8040 X diode RP 4040 la 8040 G 402 rp 402 rp KU 612 RP8040 DRA402 LA 4040
Text: rectifier diodes < 100 A diodes de redressement Types < 100 A T H O M S O N -C S F •o V r MVI I f SM 10 m s vF A (V) (A ) (V) / if max 20 A / T c a s e = 1 5 0 °C 1N 248 B, (R) 1N 249 B ,(R ) 1N 250 B, (R) 1N 1195 A, (R) 1N 1196 A, (R) 1N 1197 A, (R)
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1000A2
2500A2
TNF300
DIODE REDRESSEMENT 4040
RP 8040 X
diode RP 4040
la 8040
G 402 rp
402 rp
KU 612
RP8040
DRA402
LA 4040
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diode RP 4040
Abstract: diode RP 6040 DIODE REDRESSEMENT 4040 DIODE REDRESSEMENT RP 8040 X diode RP 6020 ic 4040 RC snubber circuit ku1010 RP 1240 M
Text: o THOMSON-CSF rectifier diode > 100A selector guide guide de sélection diodes de redressement ^ 100 A 143 new standard single phase all diodes metal stacks nouveaux ponts métalliques standards monophasés tout diodes IHOMSON-CSF T ype A v e ra g e o u tp u t
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TNF300
diode RP 4040
diode RP 6040
DIODE REDRESSEMENT 4040
DIODE REDRESSEMENT
RP 8040 X
diode RP 6020
ic 4040
RC snubber circuit
ku1010
RP 1240 M
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0540B
Abstract: No abstract text available
Text: T H IS COPY IS PROVIDED ON A RESTRICTED B ASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. PANDUIT PART NUMBER PNF14-6FN-3K* PNF14-6F-3K PNF14-8F-3K PNF14- 10FN-3K* PNF14-10F-3K PNF14-14F-3K DI ME NS IO NS in. . ±.03 A w *-01 c *-02 M *'03
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PNF14-6FN-3K*
PNF14-6F-3K
PNF14-8F-3K
PNF14-
10FN-3K*
PNF14-10F-3K
PNF14-14F-3K
CP-851,
CP-860,
CP-861
0540B
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42r2
Abstract: RC snubber circuit BYW 62 Thomson-CSF 22R2 RP 8040 X ku1010 BYW88-600 BYW88-800 RP4040 g4010
Text: rectifier diodes < 100 A o diodes de redressement < 100A THOMSON-CSF Types •o VRRM A (V) ■f sm vF (A) (V) / iF 10 m s max 6 A * / Tease = 125°C G 506,(R) G 1006, (R) G 2006, (R) G 3006,(R) G 4006, (R) G 5006,(R) G 6006,(R) G 8006, (R) G 1106, (R) G 1206, (R)
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200A2s
CB-33)
100A2s
CB-227)
TNF300
42r2
RC snubber circuit
BYW 62
Thomson-CSF 22R2
RP 8040 X
ku1010
BYW88-600
BYW88-800
RP4040
g4010
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low V oltage 1:15 D ifferential + 11+2 ECL/PECL Clock Driver The MC100LVE222 is a low voltage, low skew 1:15 differential -¡-1/+2 ECL fanout buffer designed with clock distribution in mind. The device features fully differential clock paths to minimize both device and system
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MC100LVE222
LVE222
MC100LVE2ce
DL140/D)
LVE222.
BR1333
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RC snubber circuit
Abstract: KU 1004 KU1504R ku 1008 m RP 8040 X 1200C SV2012R KU 1002 M KU 1006
Text: rectifier diodes > 100 A diodes de redressement^ 100 A Types •o Vrrm ■f s m 10 ms Vf A (V) (A ) <V) THOMSON-CSF / If Ir max (A ) (m A) (°C> 20 175 ' Case Ti max 100 A / Tease = 140°C SV SV SV SV SV SV 1016 R 1018 R 1020 R 1022 R 1024 R 1025 R 1002,
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TNF300
RC snubber circuit
KU 1004
KU1504R
ku 1008 m
RP 8040 X
1200C
SV2012R
KU 1002 M
KU 1006
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diode a63
Abstract: ERA22 T460 T930 marking code YK Q03I 40114
Text: ERA22 o .5A : O utline D raw in g s FAST RECOVERY DIODE • t t * : Features • m ' m , 5m m t r ? * a » » A s m ■ IR Ultra smalt package. tjs : M arkin g Possible fo r 5m m pitch autom atic insertion A7 - -3 - K Color code • Green High voltage by mesa design.
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ERA22
19S24^
095t/R89
diode a63
T460
T930
marking code YK
Q03I
40114
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Untitled
Abstract: No abstract text available
Text: ERD31 1.5A : Outline Drawings FAST RECOVERY DIODE : Features • Ü /]v : Marking Large current High voltage by mesa design. DKEnfe: W • S fS H S tt f i ' j — K ?—ÿ High reliability 0 3 1 - 0 4 pi . . . . 1 -1 — : Applications • M H z* D-y !±e : 4=6]. T6;
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ERD31
5tvlZaTS30S3^
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CHN 650
Abstract: chn 825 C1906
Text: ÌH ELX O N E Data Sheet M-976-2C2 MFC Transceiver • Designed for R2 MF signaling transmit and receive lev els used in China input. Each channel can be connected to an analog source using a coder-decoder codec as shown in Figure 1. • Direct A-Law PCM digital input
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M-976-2C2
M-976
M-976-2C2X
M-976-2C2P
40-pin
M-976-2C2PL
22121-20th
CHN 650
chn 825
C1906
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Untitled
Abstract: No abstract text available
Text: Communication ICs Read/Write Amplifier for FDD BH6627FS The BH 6 6 2 7 FS is a 4-mode read/write 1C designed for floppy disk drives. This 1C has an internal active filter that can be set to any of multiple settings according to transfer rate, and internal sw itches for density and inner edge/outer
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BH6627FS
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Untitled
Abstract: No abstract text available
Text: HB56D836IB Series 8,388,608-W ord x 36-Bit High Density Dynamic RAM Module HITACHI The HB56D836IB is a 8M x 36 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM HM5117400AS sealed in SOJ package and 8 pieces of 4-Mbit DRAM (HM514100BS) sealed in SOJ package. An outline of the HB56D836IB is
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HB56D836IB
36-Bit
16-Mbit
HM5117400AS)
HM514100BS)
72-pin
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dsa diodes DSA 401
Abstract: G DSA 908-44 A G dsa 605-23 A DSA 908-44 A G 0/dsa diodes DSA 401 dsa 405-44
Text: A S E A BROUN/ABB Netzdioden Dkxfe DS SA fo D f Typ/type aS"- SEMICON li — — — Diodes de redressement Rectifier diodes V rrm Ifrm s Ifavi Ifavm Tc = V 50° C 100°C D SA J[ £ DS Avalanche Typ - V A °C A A r i □ □ 4 fl3Ufi ft Ifsm OVJM) (10 ms)
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44A------1
dsa diodes DSA 401
G DSA 908-44 A G
dsa 605-23 A
DSA 908-44 A G
0/dsa diodes DSA 401
dsa 405-44
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IOR 5250
Abstract: 1N1183A IN1183 1N212BA IOR 136 1N1183 1N2128A 1N3765 1N11B3 N1190
Text: Data Sheet No. PD-2.087 INTERNATIONAL RECTIFIER llORl 1N11S3, 1N3765, 1N1183A, 1N2128A SERIES 3 5 , 4 0 and 6 0 Amp Power Silicon Rectifier Diodes Description and Features Major Ratings and Characteristics ' f îAVi 1N1183 1N3765 1N1183A 35* 35* 40* 1N2128A Units
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1N11B3,
1N3765,
1N11S3A,
1N212BA
1N1183
1N3765
1N1183A
1N2128A
IOR 5250
IN1183
IOR 136
1N11B3
N1190
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