751A-02
Abstract: MC74F38 mc74fxxn TTL fast BUFFER
Text: MC74F38 QUAD 2-INPUT NAND BUFFER, OPEN COLLECTOR QUAD 2-INPUT NAND BUFFER, OPEN COLLECTOR FAST SCHOTTKY TTL VCC A B Y A B Y 14 13 12 11 10 9 8 J SUFFIX CERAMIC CASE 632-08 14 1 1 2 3 4 5 6 7 A B Y A B Y GND N SUFFIX PLASTIC CASE 646-06 14 1 14 1 D SUFFIX
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MC74F38
51A-02
MC74FXXJ
MC74FXXN
MC74FXXD
751A-02
MC74F38
mc74fxxn
TTL fast BUFFER
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Untitled
Abstract: No abstract text available
Text: QUAD 2-INPUT NAND BUFFER, OPEN COLLECTOR LIFETIME BUY FAST SCHOTTKY TTL VCC A B Y A B Y 14 13 12 11 10 9 8 J SUFFIX CERAMIC CASE 632-08 14 1 1 2 3 4 5 6 7 A B Y A B Y GND N SUFFIX PLASTIC CASE 646-06 14 1 14 1 D SUFFIX SOIC CASE 751A-02 ORDERING INFORMATION
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51A-02
MC74FXXJ
MC74FXXN
MC74FXXD
MC74F38
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751A-02
Abstract: MC74F37 Y147
Text: MC74F37 QUAD 2-INPUT NAND BUFFER QUAD 2-INPUT NAND BUFFER VCC A B Y A B Y 14 13 12 11 10 9 8 FAST SCHOTTKY TTL J SUFFIX CERAMIC CASE 632-08 1 2 3 4 5 6 7 A B Y A B Y GND 14 1 N SUFFIX PLASTIC CASE 646-06 14 1 14 1 D SUFFIX SOIC CASE 751A-02 ORDERING INFORMATION
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MC74F37
51A-02
MC74FXXJ
MC74FXXN
MC74FXXD
751A-02
MC74F37
Y147
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silicon epitaxial mesa diode
Abstract: BXY10A BXY13A BXY11F bxy14f BXY10 Q60223-Y13-B g5na BXY11 BXY13
Text: BXY10A, 10B , 11 F, 13 A, 13B , 14F Charge storage varactors for frequency multiplication O rd e r n u m b e r ▼ B X Y10A ▼ BX Y 10 B T BXY 11 F BX Y 1 3 A BX Y 13 B BX Y 14 F Q 6 0 2 2 3 -Y 10 -A Q 6 0 2 2 3 -Y 10-B Q 6 0 2 2 3 -Y 11 - F Q 62702-X86 Q 6 0 2 2 3 -Y 13-B
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BXY10A,
BXY10A
Q60223-Y10-A
BXY10
Q60223-Y10-B
Q60223-Y11
BXY13A
Q62702-X86
BXY13
Q60223-Y13-B
silicon epitaxial mesa diode
BXY11F
bxy14f
Q60223-Y13-B
g5na
BXY11
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BXY10
Abstract: BXY13D BXY10C Z6 DIODE BXY13 BXY11 BXY10D BXY11E BXY13C DIODE G06
Text: B X Y 10 C, 10 D, 11 E, 13 C, 13 D, 14 E Charge storage varactors for frequency multiplication Epitaxial silicon mesa diodes in a ceramic microwave case T yp e B X Y 10 C BXY10D BXY11E BXY13C B X Y 13 D B X Y 14 E T h e rm a l r e s is t a n c e Junction to case
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BXY10
BXY10C
BXY10D
BXY11E
BXY13C
BXY13
BXY14
Q60223-Y10-C
Q60223-Y10-D
Q60223-Y11
BXY13D
Z6 DIODE
BXY11
DIODE G06
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tr 324 display
Abstract: LUM2565ML304
Text: F / Light Emitting Diodes LUM-2565ML304 LUM-2565ML304 1 6 X 1 6 Dot Matrix Unit • 9yfiiT r a i l / Dimensions Unit : mm LUM-2565ML304 B 7 ^ 7 7 a : -y \ -, & Î , !B-E?-77 7 < -y ?• £ 5 16 X 16 K -y V - 7 h- Y O t I T 't o U, ± # Îc  ^ B B W iis Ê ij^ ^ T
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LUM-2565ML304
LUM-2565ML304
-2565M
16X16
tr 324 display
LUM2565ML304
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Untitled
Abstract: No abstract text available
Text: MOTOROLA MC74F37 QUAD 2-INPUT NAND BUFFER QUAD 2-INPUT NAND BUFFER Vqc A B Y A B Y FAST SCHOTTKY TTL - i J — i— h ) J SUFFIX CERAMIC CASE 632-08 I 1 A B Y A B Y GND N SUFFIX PLASTIC CASE 646-06 1 D SUFFIX SOIC CASE 751A-02 ORDERING INFORMATION MC74FXXJ
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MC74F37
51A-02
MC74FXXJ
MC74FXXN
MC74FXXD
MC74F37
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Untitled
Abstract: No abstract text available
Text: M MOTOROLA MC74F38 QUAD 2-INPUT NAND BUFFER, OPEN COLLECTOR QUAD 2-INPUT NAND BUFFER, OPEN COLLECTOR FAST SCHOTTKY TTL V cc A B Y nri iiai r ii rrn A B Y îtôi it i i t i J SUFFIX CERAMIC CASE 632-08 □ A LU W LU LU LU üJ B Y A B Y GND N SUFFIX JRpi ¿SE
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MC74F38
MC74FXXJ
MC74FXXN
MC74FXXD
MC74F38
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BZY91-C75R
Abstract: BZY91 BZY91-C75 BZY91-C7V5 BZY91-C7V5R C51 diode
Text: N AMER PHILIPS/DISCRETE 2SE » MAINTENANCE T Y P t n lli :«, ^ 53^31 0022077 1 B b ^ Y y i SfcKltfS A REGULATOR DIODES Also available to B S 9305-F052 A range o f diffused silicon diodes in DO-5 metal envelopes, intended fo r use as voltage regulator and
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bs3131
BS9305-F052
BZY91-C7V5
BZY91-C75.
BZY91-C7V5R
BZY91-C75R.
bb53131
00S2B02
BZY91
BZY91-C75R
BZY91-C75
C51 diode
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JT MARKING
Abstract: No abstract text available
Text: Fully Molded similar to TO-22QAB 3 y —h’t t ì s S B D Cathode common 8 A 8 0 V T ¡w 1 5 0 V FCHS08A08 ta t* Nihon Inter Electronics Corporation Specification '/ a -y h y< ¿r— y F Construction Schottky B arrier Diode Application High Frequency Rectification
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80VTjw150V
O-22QAB
FCHS08A08
FCHS08Ar
UL94V-0
JT MARKING
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Untitled
Abstract: No abstract text available
Text: BYX52 SERIES M A IN T E N A N C E T Y P E _ RECTIFIER DIODES Silicon rectifier diodes in DO-5 metal envelopes, intended for use in power rectifier applications. The series consists of the following types: Normal polarity cathode to stud : B Y X 5 2 -3 0 0 , B Y X 5 2 -6 0 0 , B Y X 5 2 -1 2 0 0 .
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BYX52
7Z78265
7Z78263
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Untitled
Abstract: No abstract text available
Text: —»•ii 7 U y y v At y -iy ^ 'f t - '" L" Low Noise Bridge b Bridge Diode Single In-line Package OUTLINE DIMENSIONS LN4SBD 600V 4A 1# •ey-cx • s ip y ^ y tr - y i § j l FSM •S R B S • t v , mm •O A . affl. FA RATINGS Absolute Maximum Ratings
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iE22t
Ti-25
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BAY41
Abstract: tu 104 BAY42 BAY43
Text: BAY 41 BAY 42 BAY 43 S iliziu m -P lan ar-S ch aitd io d en Die Silizium-Planar-Dioden B A Y 41, B A Y 42 und B A Y 43 im Glasgehäuse 51 A2 DIN 41 880 D O -7 , eignen sich zum Einsatz als schnelle Schaltdioden bei mittleren Strömen. Die Kathode ist durch einen Farbring gekennzeichnet.
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BAY41,
BAY42
BAY43
BAY41
Q60201-Y41
Q60201-Y42
Q60201-Y43
tu 104
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Untitled
Abstract: No abstract text available
Text: g MOTOROLA MC74F38 QUAD 2-INPUT NAND BUFFER, OPEN COLLECTOR QUAD 2-INPUT NAND BUFFER, OPEN COLLECTOR FAST SCHOTTKY TTL Vqc A B V A B Y [m] fisi [ÏÏl Rii fïïl ITI ITI J SUFFIX CERAMIC CASE 632-08 □ LU liJ 111 LU LU Ld A B Y A B Y GND N SUFFIX „
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MC74F38
MC74FXXJ
MC74FXXN
MC74FXXD
MC74F38
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Untitled
Abstract: No abstract text available
Text: - j'j v V ÿ ' C t - F î / y ^ n / ' f y ^ ' f y M Bridge Diode Single In-line Package • ^ ^ H l OUTLINE DIMENSIONS Package : 3S U4SBAD Unit : mm TO 600V 4A 45 £ 1 •» s ü s iP A ’ y ' r - y •UL1SW UL File No,E 14 242 2 •S B Œ * B I fsm
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50HzjE&
-----------------U4SBA20
U4SBA60
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SHAB MARKING
Abstract: FSHS04A045 4A45V
Text: -> B -y b 4 A 4 5 V T jw 1 5 0 V y y ' f - j - — /•• Fully Molded similar to TO-22QAC Schottky B arrierDiode FSHS04A045 tu » Nihon Inter Electronics Corporation Specification a 5/ h Construction f f ljÉ Application ^A E#r High Frequency Rectification
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4A45VTjw150V
O-22QAC
FSHS04A045
50HzjEÂ
20mVRMs
100kHz
FSHS04A045
FSHS04Ar
UL94V-0
SHAB MARKING
4A45V
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AMD Bipolar PROM programming
Abstract: Kontron MPP80S AM27S20 Bipolar PROM programming kontron mpp Am27S180 tv schematic diagram company SHARP MPP80S DARLINGTON TRANSISTOR ARRAY generic prom programming
Text: Bipolar Generic PROM Series a Advanced Micro Devices R E L IA B IL IT Y R E P O R T R E L IA B IL IT Y R E P O R T R E L IA B IL IT Y R E P O R T R E L IA B IL IT Y R E P O R T R E L IA B IL IT Y R E P O R T R E L IA B IL IT Y R E P O R T R E L IA B IL IT Y R E P O R T R E L IA B IL IT Y R E P O R T R E L IA B I
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163S4
CD00986
AMD Bipolar PROM programming
Kontron MPP80S
AM27S20
Bipolar PROM programming
kontron mpp
Am27S180
tv schematic diagram company SHARP
MPP80S
DARLINGTON TRANSISTOR ARRAY
generic prom programming
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LUO 24 N
Abstract: No abstract text available
Text: î / a y b * - J a ils ' m Surface Mount Schottky Barrier Diode Single Diode OUTLINE DIMENSIONS D3FP3 30V 3A >/J\§kSMD > ffiV F=0.4V V K y r 'J - fflg V iit > D C tti*O R ffl >DC/DC Z \ y j { - S > JKV3y ‘ " B IS s RATINGS • lÊ ÎÎ I i^ /Ë fê a
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J515-5
LUO 24 N
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Untitled
Abstract: No abstract text available
Text: GD74F32 PRELIMINARY DATA SHEET QUAD 2-INPUT AND GATE Description Pin Configuration This device contains four independent 2input OR gates, each of w hjch performs the Boolean functions Y = A»B or Y = A+B. Function Table each gate Inputs A Outputs B Y H L
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GD74F32
00415A
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Untitled
Abstract: No abstract text available
Text: Surface Mounting Device v a v f W Æ K£,'i S ch ottk y Barrier Diode y o si Twin Diode OUTLINE DIMENSIONS DE10SC4 40 V 10A •SM D • T j 1 5CTC • P b rs m ~ F I\z> y 'Jx f iS E •SRS1S •D C /D C D V A -? •mm. y-A, 0A«gg • iss. RATINGS A b s o lu te M a x im u m R a tin g s
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DE10SC4
00D33E0
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S1YAK20
Abstract: No abstract text available
Text: DIODE ARRAY F.R.D. Type S 1Y A K 20 ft • F e a tu re s Sk 7 A L ti 'r 3 7 / 2 Y A •X— Y T V A -C-fo x l- A'-icftiU -3 3 • ■7 r x h '*-7 * — -7 > X b '>?]' <<> r X b J: £• j Q . - K L i I / Jo KX " f „ -l • S l Y A K s are diode a rra y s consist of tw o
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Untitled
Abstract: No abstract text available
Text: t.'lE D • bbSB^l QQ2 bS 4Q SSb H A P X A B Y 722 B Y 723 B Y 724 SILICON VERY FAST EHT SOFT-RECOVERY RECTIFIER DIODES* E H T rectifier diodes in glass envelopes intended for use in high-voltage applications e.g. the high-voltage supply of television receivers and monitors, at frequencies in excess o f 30 kHz. The devices feature non
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BY722
BY723
BY724
7Z24327
02b543
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Untitled
Abstract: No abstract text available
Text: S B D 7 U ' y v ^ < ^ - K SBD Bridge Diode Single In-line Package • f lïf ê tf â ll! D4SBS4 OUTLINE DIMENSIONS 40V 4A K ü a •a s J s iP K ^ ir -y • S B D ^ U '^ y •e v F •S R B 3 B •s?a. OA • ilf f l. FA RATINGS M fc fè m •ÌÈfcHl^r/ÈÌS Absolute Maximum Ratings
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GD74F08
Abstract: No abstract text available
Text: GD74F08 PRELIMINARY DATA SHEET QUAD 2-INPUT AND GATE Description Pin Configuration This device contains four independent 2input AND gates, each of which performs the Boolean functions Y = A»B or Y = Â+B. Function Table each gate Inputs A Outputs B Y H
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GD74F08
GD74F08
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