A641LE
Abstract: A641/6RT51 A641 A641L A641LA A641LB A641LC A641LD A641LM A641PN
Text: A641 40mm RECTIFIER DIODE 2600V / 1500A The A641 rectifier diode features a nominal 40mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.
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185oC
-40oC
A641LM
A641LE
A641LD
A641L
A641LE
A641/6RT51
A641
A641LA
A641LB
A641LC
A641LD
A641LM
A641PN
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RECTIFIER DIODE D100
Abstract: IFM D100 T75 TYPE 2000 106 35K 721 106 35K 106 35K 045 D748N-2800 DSW27 AL 2450 dv GTO MODULE
Text: IGBT and GCT – Freewheeling Diodes Type V DRM V D 911 SH D 1031 SH D 1331 SH • D 1641 SX ■ D 1181 SX ■ D 1441 SX D 931 SH D 1131 SH D 1951 SH V(D)D *) kV Tc = 25 typ. I(FSM) kA sin, 10 ms Tvj max ∫i2dt A2s • 103 sin, 10 ms Tvj max V(F)/I(FM) V/2,5 kA
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scr kp 1800
Abstract: KS600 KP1000 ctk 15-2 KP3000 KP500 kp4000 KS500 KS800 KS20
Text: Contents 1. Phase Control Thyristors 2. Fast Switching Thyristors 3. Fast Frequency Thyristors 4. High Temperature Thyristors 5. Triacs 6. General Rectifier Diodes 7. Fast Recovery Rectifier Diodes 8. High Temperature Rectifier Diodes 9. Soft 10. Small Recovery Diodes
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rt 2880
Abstract: D170S D1408 D1201S DS25 el 509 DS26 DS29 D271 DS17
Text: Click on outline no. Fast Rectifier Diodes Type VRRM IFRMSM IFSM ∫i²dt IFAVM/tc V VRSM =VRRM + 100V A kA 10 ms, Tvj max A²s 10ms Tvj max *10³ A/°C V TO rT V mΩ Tvj=Tvj max Tvj=Tvj max IRM RthJC Tvj max A °C/W 180° el sin °C Tvj max iF=IFAVM, diF/dt=
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GT 1081
Abstract: T75 TYPE 2000 106 35K 10 35L DIODE RECTIFIER DIODE D100 kuka-2003-inhalt.qxd T75 550 106 35K 045 Eupec Power Semiconductors 588 n 250 f 101
Text: kuka-2003-inhalt.qxd 17.04.2003 10:34 Uhr Seite 35 Pulsed Power Applications Type T 4003 NH T 1503 NH T 2563 NH D 2601 NH VBO kV VRRM kV VTM/ITM V/kA ITSM kA di/dtcr on A/µs 5,2 7,5 … 8 7,5 … 8 9 1,8/6 3,0/4 2,95/6 4,9/4 100 40 56 45 5000 5000 5000 VDRM
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kuka-2003-inhalt
40L/82
26K/86
14suant
GT 1081
T75 TYPE 2000
106 35K
10 35L DIODE
RECTIFIER DIODE D100
kuka-2003-inhalt.qxd
T75 550
106 35K 045
Eupec Power Semiconductors 588 n
250 f 101
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TBS7
Abstract: 130-TB
Text: TBS7 2500A Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Phase Control Thyristor 2500 Amperes/Up to 2600 Volts CATHODE POTENTIAL TERMINAL FOR .187 INCH / 4.75 MM NOM. PUSH-ON TYPE TERMINAL ] Description: Powerex Silicon Controlled Rectifiers
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TBS7262503DataSheet
TBS7
130-TB
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selenium surge suppressor
Abstract: 9rv3a14 H331 transistor Z510LA80B data sheet transistor h331 IEC60099-4 selenium transient supprESSOR 490 Z7L220 selenium rectifier Z275LA20A
Text: SUPPRESSION SURGE SUPPRESSION BENEFITS AND APPLICATIONS Product Features Applications TVSS: • Fast response time, sub picosecond ■ Board mountable ■ High clamping ratio ■ Low standby leakage current ■ ■ ■ ■ Telecommunications Data transmission
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syntron rectifier
Abstract: 2CL2FP SM3F HGUF10 WESTINGHOUSE RECTIFIERS ct 4a05 4a05 Syntron syntron diode 2CL106
Text: B D O O O N TH O T C R O EM P Y O VE Manufacturers of • ■ ■ ■ ■ CAN’T FIND WHAT YOU NEED? CALL US. CUSTOM DESIGN IS OUR SPECIALTY. HIGH VOLTAGE DIODES MOVS TVSS DEVICES SELENIUM SUPPRESSORS SILICON CARBIDE SUPPRESSORS ■ HIGH VOLTAGE HIGH CURRENT ASSEMBLIES
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k3m6
Abstract: K3-M8 b92 diode semikron SKN 71 skn 220 diode skn 71 Semikron SKR 26 /12 Semikron SKR 71 SKR 870 heatsink SKN
Text: Summary of Types continued Avalanche Rectifier Diodes Type VRRM V(BR) VRSM min. V IFRMS A IFSM i2t sin. 10 ms 10 ms 180 25 °C 25 °C A A2s IFAV @ Tcase A °C Case Page SKa 1 1 300 1 700 3 1,15 451) 60 18 E 33 SKa 3 1 300 1 700 6,7 1,8 451) 180 162 E 34
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RUTTONSHA all diodes
Abstract: RUTTONSHA 16 F M 120 VGT350
Text: Ruttonsha International Rectifier Ltd. POWER MODULES RUTTONSHA IRK.170, .230, .250 SERIES High Voltage Thyristor/Diode and Thyristor/Thyristor FEATURES L L L L L L L Electrically isolated base plate. 3000 V RMS isolating voltage. Industrial standard package.
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10ohms;
20ohms
RUTTONSHA all diodes
RUTTONSHA 16 F M 120
VGT350
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SKB c1400
Abstract: b250c1400 B40C1400 40C1500 SKBB500C1400 skb 80 c1400 rectificadores B250c140 b 500 c1400 SKV1/2
Text: High Voltage Rectifiera Hochspannungs-Gleichrichter Redresseurs haute tension A v a U o o h o o h a r o c t# r t $ lio s , ccr&mtc c a s e s tv p «» Va* v Mt V H S K E 2500/1100-0,3 E 3500/1550-0,3 E 6000/2200-0,26 H S K E 3500/1550*0,5 Ë 0000/2200-0,3
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240CC
320CO
400c0
E1000ctf4500-1
240CO
T-23-Ã
SKB c1400
b250c1400
B40C1400
40C1500
SKBB500C1400
skb 80 c1400
rectificadores
B250c140
b 500 c1400
SKV1/2
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Semikron SKBA b 500 c 1400
Abstract: SKB 7 / 12 Semikron SKB L5b SKB 7 /04 SKB 7 02
Text: SEHIKRON INC OLE D | fil3bb?l □□0151b 7 | Ì<lKlKlfcà - (jjj T ’- 2- 3 - High Voltage Rectifiers o sr Hochspannungs-Gleichrichter Redresseurs haute tension Avalanche characteristics, ceramic cases Types VpR) HSKE 2500/1100-0,3 E 3500/1550-0,3 E 5000/2200-0,25
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0151b
SKXA35N
C1400
Semikron SKBA b 500 c 1400
SKB 7 / 12
Semikron SKB L5b
SKB 7 /04
SKB 7 02
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BYS 045 v 72
Abstract: BYS 045 bys 26-45 bys 27-45 DS17 BYS 26-90 BYS 21-45 bys 22-50 SCHOTTKY bys 50 BYS 045 v 75
Text: Overview Diodes in Disk Housings Rectifier Diodes Type V rrm V V rsm Ifrm sm I f SM Ji2d t IFA V M / t c V TO rT A kA A 2s A fC V m fi 10 ms, = V RR!.1 + 100 V (50V) 1) . T "v jm a x — T vj m ax R th J C ° c /w T , m ax o u tlin e °C 180° el sin
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5x103
40x10
BYS 045 v 72
BYS 045
bys 26-45
bys 27-45
DS17
BYS 26-90
BYS 21-45
bys 22-50
SCHOTTKY bys 50
BYS 045 v 75
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d2388
Abstract: D67U D1201 D1401 431lf D368S EUPEC D1201 D1201S
Text: EUPEC Fast rectifier diodes Type If r m s m V rrm A V I f sm ’4^E 5 / i zdt • If a v m ^ c 34D3i?ci7 00D0112 122 ■ V TO rT = 10 ms, 10 ms, tv ,= tvj I v j max tv] max tv j max •vj m ax kA A2s V mQ A/°C Irm R.hjc = t VJ max = I fAVM d i p / d t = 50 A/nS
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34032T?
D1201
D1401
d2388
D67U
431lf
D368S
EUPEC D1201
D1201S
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IFR 740
Abstract: D438 D1201S 14MQ M/LF 5805
Text: Fast rectifier diodes Type If r m s m V rrm V rsm =Vrrm Ifs m ./¡2dt tvj max O utline V TO rT Irm tv] = 1vj = t „ max ¡F = Ifa v M V mQ A °c/w °c 470/ 95 440/100 1,14 0,725 7702) 0,059 150 32 470/ 95 1,14 0,725 7702) 0,059 150 40 Ip A V M ^ C R th J C
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D1201S
Abstract: D1408 D1201 EUPEC D1201
Text: EUPEC Fast rectifier diodes Type V rrm V rsm If r m s m Ifsm / i 2dt 34032*17 0001334 S42 • UPEC blE D Ifavm ^ c V TO It Irm R fh J C = VRRM + 50 V1) 10 ms, 10 ms, tv i = tv i tv , m ax tv j max W) m ax tv j max ¡F A kA A2s V m£2 A = tv j = tv j max = Ifavm
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D1201
38-10s
D1201S
D1408
EUPEC D1201
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Untitled
Abstract: No abstract text available
Text: Diodes International @ ]ReCtifier Fast Recovery 11 0-2 50 Am ps >F A V @ T c Part Number (12) VRRM SD103N02.PV SD103N04.PV SD103N06.PV SD103N08.PV SD103N10.PV SD103N12.PV SD103N14.PV SD103N16.PV SD103N18.PC SD103N20.PC SD103N22.PC SD103N24.PC
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SD103N02.
SD103N04.
SD103N06.
SD103N08.
SD103N10.
SD103N12.
SD103N14.
SD103N16.
SD103N18.
SD103N20.
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d405n
Abstract: D 400 2200 E ic 4580 D1030 D1049 D1809 D1901 0 280 130 037
Text: EUPEC 4TE D 34 03 51 7 [ []D[311D 35T • Rectifier diodes Type ^RRM FRMSM FSM A FAVM^C '/ TO) RthJC T-Ol'O 10 ms, vi = tv ,= vj m a x v] m ax V] m a x 180 “el sin. kA A2S V m£2 K/W °c A/°C Outline vj max vi m ax 10 ms, V fpdt UPEC 7200 76/ 81 60/100
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D0D011D
12-10s
d405n
D 400 2200 E
ic 4580
D1030
D1049
D1809
D1901
0 280 130 037
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1N5480
Abstract: 425SH6AB1 1N5484 1N5481 1N5482 1N5478 Conditioning Semiconductor Devices Corporation 423DB1AB1 1N5485 CI LM 4800
Text: CONDITIONING S E M I C O N D PVC Ï Ë Ï aaSBMAI OOQOllI T'2-3 ' ^ 5 Silicon Rectifier Modules CSác Up to 20,000 Volts Up to 6.0 Amps FEATURES: • • • • • • • All types utilize fully glassivated, non-cavity silicon diode building blocks. Hermetically sealed devices.
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423MD11AH1
423SD14AH1
423ND17AH1
TB-0010
1N5480
425SH6AB1
1N5484
1N5481
1N5482
1N5478
Conditioning Semiconductor Devices Corporation
423DB1AB1
1N5485
CI LM 4800
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tb 4-1250
Abstract: TRIODE itl 2X1600 40216 40626 RS 566 triode TRIODE itl 5-1 preamplificateur 19SI philips kt
Text: PHILIPS TB 4/1250 TRIODE for use as H.P. or L.F. amplifier or oscillator, suitable for grounded grid circuits TRIODE pour utilisation en amplificatrice H.F.ou B.F.ou oscillatrice, propre aux circuits "grounded-grid" TRIODE zur Verwendung als HF- oder NF-Verstärker oder
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7R5I29B
Z1957
6000r
U/1250
7R51227
TB4/1250
tb 4-1250
TRIODE itl
2X1600
40216
40626
RS 566 triode
TRIODE itl 5-1
preamplificateur
19SI
philips kt
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D 368 S 10
Abstract: el 509 D368S
Text: EUPEC Fast rectifier diodes Type V Ifr m s m rrm Ifsm blE » / ¡2dt Ifavm / Î c • 3403817 GDG1333 bDb « U P E C V TO rT tvj = tvj Ir m R.hjc t v j m ax Outline V r s m = V r rm + 50 V 1) A V 10 ms, 10 ms, tv j m ax t ’/j max kA A2s tvj max ¡F ~ Ivj max
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GDG1333
D 368 S 10
el 509
D368S
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skt 230
Abstract: skt 5000 B20s
Text: 5EMIKR0N innovation+service Section 3 1 Thyristors Features • • • • • • • Threaded stud thyristors Hermetic metal cases with glass insulators Glass to metal seal Threaded studs ISO M5.M24 x 1,5, UNF 10 - 32 . " International standard cases
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M16xl
M24xl
skt 230
skt 5000
B20s
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553c
Abstract: international rectifier GTO
Text: Bulletin 12091 rev. A 10/94 International IÖ R Rectifier SD1553C.K SERIES FAST RECOVERY DIODES Hockey Puk Version Features • High power FA ST recovery diode series ■ 2.0 to 3.0 fis recovery lime ■ High voltage ratings up to 3000V 1825A 1650A ■ High current capability
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SD1553C.
D0-200AC
553c
international rectifier GTO
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KT 382
Abstract: pdaat powerex ks powerex kt KT 783
Text: POü ÉREX INC 'ìlD D • TaTMLEÍToOQlñTi T Thyristor Assemblies-Air Cooled Device Assembly Module Typ« PTA6T620_15 _20 _30 PTA6T62S_25 _30 _ 40 PTA7T720 _35 _45 _55 PTA7T7S0_55 _65 _75 PTA9T9G0_ 08 _10 _ 12
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PTA6T620_
PTA6T62S_
PTA7T720
PTAATA20_
KT 382
pdaat
powerex ks
powerex kt
KT 783
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