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    B*.* TRANSISTOR Search Results

    B*.* TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    B*.* TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sd965 transistor

    Abstract: TRANSISTOR 2341 852 transistor 2SD965
    Text: 2SD965 TRANSISTOR NPN  " $                             !"#   $    )*  *+                   #         )*,&  -).             / 0(    /


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    PDF 2SD965 2sd965 transistor TRANSISTOR 2341 852 transistor 2SD965

    ss8050 TRANSISTOR

    Abstract: SS8050 852 transistor SS8050 equivalent TRANSISTOR ss8050 TRANSISTOR 2341
    Text: SS8050 TRANSISTOR NPN      " $                           !    "      #$%&'    ()  )*                    !'          ()+$  ,(-


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    PDF SS8050 ss8050 TRANSISTOR SS8050 852 transistor SS8050 equivalent TRANSISTOR ss8050 TRANSISTOR 2341

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC Transistors Diodes SMD Type SMD Type Product specification KC846A,B/KC847A,B,C/KC848A,B,C BC846A,B/BC847A,B,C/BC848A,B,C SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Ideally suited for automatic insertion 0.4


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    PDF KC846A B/KC847A C/KC848A BC846A B/BC847A C/BC848A OT-23 KC846 KC847 KC848

    3F smd marking

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification KC856A,B/KC857A,B,C/KC858A,B,C BC856A,B/BC857A,B,C/BC858A,B,C SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 For Switching and AF Amplifier Applications +0.1 1.3-0.1 +0.1 2.4-0.1 Ideally suited for automatic insertion


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    PDF KC856A B/KC857A C/KC858A BC856A B/BC857A C/BC858A OT-23 KC856 KC857 KC858 3F smd marking

    SMD TRANSISTOR MARKING 3B

    Abstract: 3F smd marking SMD Transistors 3f smd transistor marking 3j smd transistor 3j smd transistor marking af KC857B 3F smd transistor smd transistor 3F MARKING SMD PNP TRANSISTOR
    Text: Transistors SMD Type PNP Transistor KC856A,B/KC857A,B,C/KC858A,B,C BC856A,B/BC857A,B,C/BC858A,B,C SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 For Switching and AF Amplifier Applications +0.1 1.3-0.1 +0.1 2.4-0.1 Ideally suited for automatic insertion


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    PDF KC856A B/KC857A C/KC858A BC856A B/BC857A C/BC858A OT-23 KC856 KC857 KC858 SMD TRANSISTOR MARKING 3B 3F smd marking SMD Transistors 3f smd transistor marking 3j smd transistor 3j smd transistor marking af KC857B 3F smd transistor smd transistor 3F MARKING SMD PNP TRANSISTOR

    Transistors smd 1G

    Abstract: SMD TRANSISTOR MARKING 1B smd transistor marking 1j SMD TRANSISTOR MARKING 1F SMD Transistor 1f marking 1A smd transistor 1l smd transistor marking 1L 1F transistor smd MARKING SMD TRANSISTOR 1j
    Text: Transistors SMD Type NPN Transistor KC846A,B/KC847A,B,C/KC848A,B,C BC846A,B/BC847A,B,C/BC848A,B,C SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Ideally suited for automatic insertion 0.4 3 1 0.55 For Switching and AF Amplifier Applications


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    PDF KC846A B/KC847A C/KC848A BC846A B/BC847A C/BC848A OT-23 KC846 KC847 KC848 Transistors smd 1G SMD TRANSISTOR MARKING 1B smd transistor marking 1j SMD TRANSISTOR MARKING 1F SMD Transistor 1f marking 1A smd transistor 1l smd transistor marking 1L 1F transistor smd MARKING SMD TRANSISTOR 1j

    BC546A

    Abstract: BC547A CBC546A BC549A transistor bc548b BC547C A1 transistor bc546A NPN transistor to-92 BC548A NPN Transistor BC548B
    Text: NPN Transistor Preliminary Small Signal Diode DO-92 A B Features G E Epitaxial planar die construction Surface device type mounting Moisture sensitivity level 1 Matte Tin Sn lead finish with Nickel(Ni) underplate


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    PDF BC546-A/B/C BC547-A/B/C BC548-A/B/C BC549-A/B/C BC550-A/B/C DO-92 MIL-STD-202, 19gram C/10s 100mA BC546A BC547A CBC546A BC549A transistor bc548b BC547C A1 transistor bc546A NPN transistor to-92 BC548A NPN Transistor BC548B

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C List List. 1 Package outline. 2


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    PDF BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C 1000hrs 1000hrs 15min 20sec 1000cycle 96hrs

    Untitled

    Abstract: No abstract text available
    Text: Integrated Photosensors CNZ1402A/B, CNZ1403A/B ON1402A/B, ON1403A/B Integrated Photosensors Unit : mm CNZ1402A/B For contactless SW, object detection 0.45±0.1 Overview Mark for indicating LED side 25.0±0.35 13.0 5.0±0.2 A Features Output transistors turn on and off (two types) when light is shined


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    PDF CNZ1402A/B, CNZ1403A/B ON1402A/B, ON1403A/B) CNZ1402A/B CNZ1402A/B CNZ1403A/B

    ITT9014C

    Abstract: itt8050 JC501P jc5010 ITT8050CU ITT9014A ITT9013H BC547B pin configuration jc33725
    Text: NPN Transistors NPN Silicon Transistors -T O -9 2 Plastic Package On special request, these transistors will also be produced with TO-18 pin configuration. Type Pin Config. VcEO hFE at VcE sat V ce/Ic B B B B B B B B B B B B B B B B 45 45 45 25 25 25 65


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    PDF ITT9013HU) ITT9014C itt8050 JC501P jc5010 ITT8050CU ITT9014A ITT9013H BC547B pin configuration jc33725

    transistor BF 258

    Abstract: No abstract text available
    Text: Standard ICs High voltage, high current Darlington transistor array B A 1 2 0 0 1 B /B A 1 2 0 0 2 /B A 1 2 0 0 3 B /B A 1 2 0 0 3 B F / B A 1 2 0 0 4 B The BA12001B, BA12002, BA12003B, BA12003BF, and BA12004B are high current transistor arrays featuring high


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    PDF BA12001B, BA12002, BA12003B, BA12003BF, BA12004B BA12004B) 500mA, transistor BF 258

    so 54 t

    Abstract: BF547B BF751 T143R BFG65
    Text: 54 RF/Microwave Devices RF W ideband Transistors Ratings V ic * Type No. BF547 B F547W BF689K BF747 BF747W BF748 BF751 BF763 B F G 16 A B F G 17 A B FG 25 A /X BFG31 BFG 32 B FG 33 BFG33/X BFG33/XR B FG 34 BFG35 BFG 55 B FG 65 B FG 67 B FG67/X BFG67/XR BFG90A


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    PDF BF547 F547W BF689K BF747 BF747W BF748 BF751 BF763 BFG31 BFG33/X so 54 t BF547B T143R BFG65

    Untitled

    Abstract: No abstract text available
    Text: Standard ICs High voltage, high current Darlington transistor array B A 1 2 0 0 1 B / B A 12002 / B A 1 2 0 0 3 B / B A 1 2 0 0 3 BF / B A 1 2 0 0 4 B The BA12001B, BA12002, BA12003B, BA12003BF, and BA12004B are high current transistor arrays featuring high


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    PDF BA12001B, BA12002, BA12003B, BA12003BF, BA12004B BA12004B) 500mA,

    HPB-R1

    Abstract: HPB-A1 HPB-E1 HPB-R2 AD419 IEC255-5-1977 Yamatake hpb IR 5MM receiver 97 transistor scan
    Text: SR. No. Yamatake Corporation SPECIFICATIONS THROUGH SCAN POLARIZED RETROREFLECTIVE SCAN SET E M IT T E R R E C E IV E R H P B -P 1 H P B -T 1 H P B -E 1 H P B -R 1 H P B -A 1 OPEN COLLECTOR OF NPN TRANSISTOR H P B -P 2 H P B -T 2 H P B -E 1 H P B -R 2 H P B -A 2


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    PDF 30VDC AD41940E HPB-R1 HPB-A1 HPB-E1 HPB-R2 AD419 IEC255-5-1977 Yamatake hpb IR 5MM receiver 97 transistor scan

    c546b

    Abstract: c547b C548C C547 b c547 C546 c548b C546 A c546 B c547c
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC546, B BC547, A, B, C BC548, A, B, C NPN Silicon COLLECTOR 1 2 BASE" 3 EMITTER MAXIMUM RATINGS Sym bol B C546 B C547 B C 548 U nit Collector-Em itter Voltage R ating VCEO 65 45 30 Vdc C o lle c to r-B a s e Voltage


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    PDF BC546, BC547, BC548, BC547/BC548 BC546 c546b c547b C548C C547 b c547 C546 c548b C546 A c546 B c547c

    Untitled

    Abstract: No abstract text available
    Text: • b b S a i a i QQS4h?3 QTT » A P X N AMER PHILIPS/DISCRETE B F720 B F722 b?E » SILICON EPITAXIAL TRANSISTORS NPN transistors in a microminiature plastic envelope intended for class-B video output stages in colour television receivers, and general purpose high voltage circuits.


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    PDF BF721 BF723 BF720 BF722 bbS3T31 0024b75

    CW65

    Abstract: No abstract text available
    Text: BCW65 BCW66 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - AUGUST 1935_ P A R T M A R K IN G D E T A IL S B C W 65A - EA B CW 65A R - BCW 65B - EB B C W 65B R - 4V 5V B CW 65C - EC B C W 65C R - 6V B CW 66F - EF B CW 66FR -


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    PDF BCW65 BCW66 CW65

    BPT-BP314

    Abstract: PT05 DARx KP3A BPX21
    Text: SILICON PHOTO TRANSISTORS MODEL: B P T -B P x21 , B P T -B P x l4 , B P T -K P x A l , B P T -F P x E l , B P T -N P x C l . A PPLICA TIO N S • Remote Control • Sm oke D etector • Automatic Control System - PC Mouse - Optical Encoder A B SO LU T E NAXIMUM R A T IN G S T a=25'C


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    PDF

    cbf420

    Abstract: BC556A BS170 116 BC558A BC549B NPN 2n3904 2N3904 cbf421 BC546A BC338-16
    Text: List of Types Type Page Type Page Small-Signal Transistors NPN Small-Signal Transistors (PNP) 2N3904 2N4124 BC337-16, -25, -40 BC338-16, -25, -40 BC546-A, -B BC547-A, -B, -C BC548-A, -B, -C BC549-B, -C BC817-16, -25, -40 B C 8 1 8 -1 6,-25, -40 BC846-A, -B


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    PDF 2N3904 2N4124 BC337-16, BC338-16, BC546-A, BC547-A, BC548-A, BC549-B, BC817-16, BC846-A, cbf420 BC556A BS170 116 BC558A BC549B NPN 2n3904 cbf421 BC546A BC338-16

    BFG32

    Abstract: No abstract text available
    Text: P h ilip s Sem iconductors b b SB ^ B l O O B im b 7^5 • Product specification APX £ PNP 5 GHz wideband transistor BFG32 N AMER PHILIPS/DISCRETE DESCRIPTION b^E D PINNING PNP transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for application in


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    PDF BFG32 OT103 BFG96. BFG32

    zn1613

    Abstract: NKT0028 BFX84 T018
    Text: NPN Silicon Transistors IMPN S ilicon Transistors fo r high level audio applications Type Characteristics; at T.amb =25 C M a xim um ratings Case B F X 84 B F X 85 T05 T05 B F X 86 B F Y 50 B F Y 51 B FY 52 B F Y 53 N K T 0028 N K T 0128 N K T 10339 N K T 10439


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    PDF 0V/150mA) 150mA/15mA) BFX84 zn1613 NKT0028 T018

    MJ150BX100

    Abstract: DD81S
    Text: 6367254 MOTOROLA SC X STRS/R MOTOROLA ^ F 96D 8 1 5 0 3 I)"I SEMICONDUCTOR D J -5 3 '% > DD81SD3 1 | a B B B S B B B B TECHNICAL DATA MJ150BX100 N P N S ilic o n P o w e r T ra n s is to r M o d u le Energy M anagem ent Series These power transistors are designed for industrial service under practical operating


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    PDF DD81SD3 BX100 MK145BP, J150B 21276-L MJ150BX100 DD81S

    BDX95

    Abstract: BDX93 BDX94 BDX91 BDX96 BDX92 TO3 philips bdx96 philips
    Text: . m b b S B ' m 0050051 ì • N AMER PHILIPS/DISCRETE BDX91 BDX93 BDX95 5SE D T - 23-/3 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in T O -3 envelope for audio output stages and general-amplifier and switching applications. P-N-P complements are B D X 92 , B D X 94 and B D X 96 .


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    PDF BDX91 BDX93 BDX95 t-23-/3 BDX92, BDX94 BDX96. BDX93 BDX95 BDX91 BDX96 BDX92 TO3 philips bdx96 philips

    BCW66

    Abstract: BCW65 BCW65A BCW67 BCW68 bcw66fr
    Text: BCW65 BCW66 SOT23 NPN SILICON PLANAR M EDIUM POWER TRANSISTORS IS S U E 3 - A U G U S T 1995 P A R T M A R K IN G D E T A IL S B C W 6 5 A - EA _ B C W 6 5 A R - 4V B C W 65BR - 5V B C W 6 5 B - EB B C W 6 5 C - EC B C W 6 6 F - EF BC W 65CR - 6V B C W 6 6 G - EG


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    PDF BCW65 BCW66 -BCW65A- BCW65B- BCW65C- BCW66F- BCW66G- BCW66H- -BCW65 BCW67 BCW65A BCW68 bcw66fr