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    AX909 Price and Stock

    Maxim Integrated Products MAX9095AUD+T

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    DigiKey MAX9095AUD+T Reel 5,000 2,500
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    • 10000 $1.33334
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    MAX9095AUD+T Cut Tape 4,933 1
    • 1 $4.2
    • 10 $2.772
    • 100 $1.9843
    • 1000 $1.55575
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    MAX9095AUD+T Digi-Reel 1
    • 1 $4.2
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    • 100 $1.9843
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    Maxim Integrated Products MAX9094ASD+T

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    DigiKey MAX9094ASD+T Reel 2,500 2,500
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    MAX9094ASD+T Cut Tape 1
    • 1 $4.2
    • 10 $2.772
    • 100 $1.9843
    • 1000 $1.55575
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    Maxim Integrated Products MAX9093AKA+T

    IC COMPARATOR 2 GEN PUR SOT23-8
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    DigiKey MAX9093AKA+T Reel 2,500 2,500
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    MAX9093AKA+T Cut Tape 2,079 1
    • 1 $4.48
    • 10 $2.969
    • 100 $2.1353
    • 1000 $1.6817
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    Newark MAX9093AKA+T Cut Tape 1
    • 1 $2.72
    • 10 $2.45
    • 100 $2
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    Maxim Integrated Products MAX9092AKA+T

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    DigiKey MAX9092AKA+T Cut Tape 936 1
    • 1 $2.81
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    • 1000 $1.275
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    ComSIT USA MAX9092AKA+T 32,000
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    Maxim Integrated Products MAX9094AUD+

    IC COMPARATOR 4 GEN PUR 14TSSOP
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    DigiKey MAX9094AUD+ Tube 747 1
    • 1 $4.2
    • 10 $2.772
    • 100 $1.9843
    • 1000 $1.65834
    • 10000 $1.65834
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    Rochester Electronics MAX9094AUD+ 3,873 1
    • 1 $1.59
    • 10 $1.59
    • 100 $1.49
    • 1000 $1.35
    • 10000 $1.35
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    Find more AX909 price and stock on Findchips.com

    AX909 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK2012

    Abstract: No abstract text available
    Text: Ordering number:EN4321A N-Channel Silicon MOSFET 2SK2012 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SK2012]


    Original     		PDF EN4321A 2SK2012 2SK2012] O-220ML 2SK2012

    2SJ306

    Abstract: No abstract text available
    Text: Ordering number:EN4316 P-Channel Silicon MOSFET 2SJ306 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ306]


    Original     		PDF EN4316 2SJ306 2SJ306] O-220ML 2SJ306

    SB10-015C

    Abstract: No abstract text available
    Text: SB10-015C 注文コード No. N 4 4 3 6 B 三洋半導体データシート 半導体ニューズ No. N4436A とさしかえてください。 SB10-015C ショットキバリアダイオード 15V, 1A 整流素子 用途 ・スイッチングレギュレータ , コンバータ , チョッパ等の高周波回路整流用。


    Original     		PDF SB10-015C N4436A 100mA, 100mA 62797GI BX-0698 TB-00000593 AX-9090 ID00418 SB10-015C

    GT 4317

    Abstract: EN4317A 2063A taito 2SJ307 EN4317
    Text: Ordering number:EN4317A P-Channel Silicon MOSFET 2SJ307 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ307]


    Original     		PDF EN4317A 2SJ307 2SJ307] O-220ML 40599TS/53093TH AX-9094 GT 4317 EN4317A 2063A taito 2SJ307 EN4317

    2SJ307

    Abstract: No abstract text available
    Text: Ordering number:EN4317A P-Channel Silicon MOSFET 2SJ307 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ307]


    Original     		PDF EN4317A 2SJ307 2SJ307] O-220ML 2SJ307

    2SJ308

    Abstract: ITR00414 ITR00415 ITR00416 ITR00417
    Text: 注文コード No.N 4 3 1 8 2SJ308 三洋半導体ニューズ No. 4 3 1 8 61499 新 2SJ308 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。


    Original     		PDF 2SJ308 --100V --10V ITR00420 ITR00421 ITR00422 ITR00423 2SJ308 ITR00414 ITR00415 ITR00416 ITR00417

    2SK2011

    Abstract: EN4320
    Text: Ordering number:EN4320A N-Channel Silicon MOSFET 2SK2011 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SK2011]


    Original     		PDF EN4320A 2SK2011 2SK2011] O-220ML 2SK2011 EN4320

    2SJ306

    Abstract: ITR00394 ITR00395 ITR00396 ITR00397 ION210
    Text: 注文コード No.N 4 3 1 6 A 2SJ306 No. 4 3 1 6 A 61599 半導体ニューズ No.4316 とさしかえてください。 2SJ306 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。


    Original     		PDF 2SJ306 --100V --10V ITR00400 ITR00401 ITR00402 ITR00403 2SJ306 ITR00394 ITR00395 ITR00396 ITR00397 ION210

    SB10-015C

    Abstract: 82597 in 4436
    Text: SB10-015C Ordering number : ENN4436B SB10-015C Schottky Barrier Diode 15V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • • • Low forward voltage (VF max=0.55V). Fast reverse recorvery time (trr max=10ns).


    Original     		PDF SB10-015C ENN4436B SB10-015C-applied SB10-015C 82597 in 4436

    GT 4317

    Abstract: EN4317A 2SJ307 EN4317 43171
    Text: Ordering number:EN4317A P-Channel Silicon MOSFET 2SJ307 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ307]


    Original     		PDF EN4317A 2SJ307 2SJ307] O-220ML GT 4317 EN4317A 2SJ307 EN4317 43171

    Untitled

    Abstract: No abstract text available
    Text: s, AP A d va n c e d P e rfo rm a n c e Series V DSs = 2 5 0 V 206 3 N Channel Power M O SFET £4321 F e a tu re s •Low ON resistance. ■Very high-speed switching. • Low-voltage drive. • M icaless package facilitating mounting. A b so lu te M ax im u m R a tin g s a t Ta = 25°C


    OCR Scan     		PDF 2SK2012

    m 43171

    Abstract: 2sj307 43171
    Text: 2SJ307 AP A d v a n c e d P e rfo rm a n c e Series V D3S= 2 5 0 V 2063 P Channel Power M OSFET £ 4 3 17 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •Micaless package facilitating mounting. A bsolute M axim um R atings at Ta = 25°C


    OCR Scan     		PDF 2SJ307 10//S 53093TH AX-9094 m 43171 2sj307 43171

    2SJ306

    Abstract: No abstract text available
    Text: 2SJ306 AP A dvanced Perform ance Series V dss = 2 5 0 V 2063 P Channel Power M O SFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •M icaless package facilitating mounting. b so lu te M axim um R a tin g s a t Ta = 25°C


    OCR Scan     		PDF 2SJ306 --20V O-220ML 53093TII AX-9093 2SJ306

    2SK2010

    Abstract: No abstract text available
    Text: Ordering num ber:EN 4319 _ 2SK2010 No.4319 N -Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • M icaless package facilitating mounting. A b so lu te M axim um R a tin g s at Ta = 25°C


    OCR Scan     		PDF 2SK2010

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN4321A N-Channel Silicon MOSFET _ 2SK2012 m i “ Ultrahigh-Speed Switching Applications Package Dimensions Features •Lo w O N resistance. •Ultrahigh-speed switching. -Low-voltage drive. •Micaless package facilitating mounting.


    OCR Scan     		PDF EN4321A 2SK2012 2SK2012] O-220ML Curren80 0G21b0b

    2SJ307

    Abstract: No abstract text available
    Text: Ordering number:EN4317A P-Channel Silicon MOSFET 2SJ307 s a H yoi Ultrahigh-Speed Switching Applications Features Package Dimensions • L ow O N resistance. umt:mm • U ltrahigh-speed sw itch in g. 2063A • L o w -voltage drive. [2SJ307] • M ica less package facilitatin g m ounting.


    OCR Scan     		PDF EN4317A 2SJ307 2SJ307] O-220ML ET2220D 2SJ307

    43171

    Abstract: EN4317 2SJ307
    Text: Ordering num ber: EN4 3 1 7 _ 2SJ307 P-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • M icaless package facilitating mounting. b so lu te M axim um R a tin g s a t Ta = 25°C


    OCR Scan     		PDF EN4317 2SJ307 100ers 43171 EN4317 2SJ307

    1C00

    Abstract: 2SJ306
    Text: Ordering num ber: E N 4316 2SJ306 No.4316 P-Channel MOS Silicon FET Very High-Speed Switching Applications F eatu re s •Low ON resistance. ■Very high-speed switching. ■Low-voltage drive. ■Micaless package facilitating mounting. A bsolute M axim um R atin g s a t Ta = 25°C


    OCR Scan     		PDF EN4316 2SJ306 1C00 2SJ306

    Diode U160

    Abstract: 2SJ308
    Text: Ordering number : EN 4 3 1 8 2SJ308 No.4318 P-Channel MOS Silicon FET SANYO i Very High-Speed Switching Applications F eatures • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Micaless package facilitating mounting. A bsolute Maximum Ratings at Ta = 25°C


    OCR Scan     		PDF 2SJ308 Diode U160 2SJ308

    9099 dm

    Abstract: No abstract text available
    Text: 2SK2058 AP A d v a n c e d P e rfo rm a n c e Series V DSS= 2 5 0 V 2056 N Channel Power M OSFET F e a tu re s • Low ON resistance. • Very high-speed switching. •Low-voltage drive. A b so lu te M ax im u m R a tin g s a tT a = 25°C D rain to Source Voltage


    OCR Scan     		PDF 2SK2058 51193TH AX-9099 9099 dm

    Transistor gd 907

    Abstract: MAX907CPA
    Text: 19-0129; Rev. 2; 4/93 Single/Dual/Quad High • •Speed, U ltra Low-Power, Single »Supply TTL C om parators Because they are micropower, high-speed compara­ tors that operate from a single +5V supply and include built-in hysteresis, these devices replace a variety of


    OCR Scan     		PDF MAX909 500nV MAX909) P09CPA MAX909CSA MAX909C/D MAX909EPA MAX909ESA MAX909MJA Transistor gd 907 MAX907CPA

    2SK2058

    Abstract: No abstract text available
    Text: Ordering num ber: EN 4315 No.4315 2SK2058 N-Channel MOS Silicon FET Very High-Speed Switching Applications i Features - Low ON resistance. • Very high-speed switching. • Low-voltage drive. Absolute Maximum Ratings at Ta = 25°C Drain-to-Source Voltage


    OCR Scan     		PDF 2SK2058 100/iA

    4436

    Abstract: No abstract text available
    Text: Ordering num ber: E N 4436 SB10-015C No.4436 Schottky B arrier Diode SAXYO i 15V, 1A Rectifier A p p lic a tio n s • H igh frequency rectification sw itching regulators, converters, choppers . F e a tu r e s • Low forw ard voltage (Vp max = 0.55V). •F ast reverse recovery time (trr m ax = XOns).


    OCR Scan     		PDF SB10-015C SB10-015C-applied 4436

    2SJ308

    Abstract: No abstract text available
    Text: 2SJ308 AP A d v a n c e d P e rfo rm a n ce Series 2063 V Ds s = 2 5 0 V P Channel Power M OSFET •£■»318 F e a tu re s ■Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Micaless package facilitating m ounting. b so lu te M ax im u m R a tin g s a t Ta = 25°C


    OCR Scan     		PDF 2SJ308 53093TH AX-9095 2SJ308