Untitled
Abstract: No abstract text available
Text: Variable Capacitance Diodes #Tuning Diodes Capacitance can be changed linearly and widely as frequency changes. This frequncy response can be used as tuning element on VHF and UHF circuits. Packaged in pin 2 mini for high density mounting application. Electrical characteristics
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1SV223
RN711H
RN719F
RN719D
RN731H
RN739F
RN739D
1SV223
NOOTT11
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Untitled
Abstract: No abstract text available
Text: RSM page 30 I. Le bouchon D S M 96*-B se differencie du D S M 96 *-A par un circlip fnlerdJsant le deverrouilfage. NOTA, 1. DSM 9 6 * -B dustcap is different from D S M 9 6 * * -A by & dip preventing UNLOCKING. NOTE. 1. Die Schutzkappe DSM 96*-B unterscheldet alch von DSM 38*-A durch einen Slcherungsring,
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6-04-A
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RN731H
Abstract: SMD CODE "SMD Code" 1SV223
Text: Variable Capacitance Diodes #Tuning Diodes Capacitance can be changed linearly and widely as frequency changes. This frequncy response can be used as tuning element on VHF and UHF circuits. Packaged in pin 2 mini for high density mounting application. E lectrical characteristics
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1SV223
RN711H
RN719F
RN719D
RN731H
RN739F
RN739D
NOOTT11
SMD CODE
"SMD Code"
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G732
Abstract: MA811 Marconi radiation hard
Text: MARCONI CKT TECHNOLOGY 3GE D • S7Ô3442 0001520 5 ■ 7^75'"'// ' 3 3 Digital Switch Module M @ ïc s a i Electronic Devices FEATURES MA811 DIO [7 DI1 DI2 2| FSP1 [2 27] VDD [3 26] CLK 2| CI1 * Single 5v supply DI3 [4 * Low power CMOS design DI4 [5 ¡3
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0G01S2Ã
MA811
input/256
Std-883C
ESA9000
G732
MA811
Marconi radiation hard
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Untitled
Abstract: No abstract text available
Text: W FLESSE Y Semiconductors. ZN451 3'k DIGIT DVM 1C WITH EXTERNAL AUTO-ZERO The ZN451 is a complete digital voltmeter fabricated on a monolithic chip. A novel charge-balancing conversion technique ensures good linearity. The auto-zero function is completely digital in operation, thus obviating the need for a
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ZN451
ZN451
999mV
ZN451E
ZN451CJ
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ior e78996
Abstract: IR E78996
Text: INTERNATIONAL RECTIFIER bSE D m INR MÖ55452 DDlbEL.^ T74 Bulletin E27104 International 1»] Rectifier IRFK4H150.IRFK4J150 Isolated Base Power H E X -p ak Assembly - Parallel Chip Configuration High Current Capability. UL recognised E78996. Electrically Isolated Base Plate.
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E27104
IRFK4H150
IRFK4J150
E78996.
T0-240
ior e78996
IR E78996
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Untitled
Abstract: No abstract text available
Text: Netz-Thyristoren Phase control thyristors ^TAVM^C V TO (d i/d t)cr rT Q. / i 2d t o Itrmsm Itsm V drm Type < Typ Cl Thyristors pour applications réseau Vgt Rthjc Igt Outline V rrm V dsm = V drm 10 ms, 10 ms, tVJ = tvi max tv. max 180 °el sin '»,= V rsm = V rrm + 100 V
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T869N
T1059
T1050
T1078N
T949N
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d3000 mosfet
Abstract: analogue ohmmeter circuit diagram ZN490 transistor d3000 d3000 TL091 ZN451 ZN451E d3000 fet ZN451CJ
Text: ZN451E ZN451CJ 3% digit DVM 1C with external auto-zero FEATURES DESCRIPTION • External circuits may be included in the auto-zero loop • Full-scale reading '1.999mV or lower • Measures sum or difference of two inputs • Digital auto-zero with guaranteed zero
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ZN451E
ZN451CJ
999mV
ZN451
ZN451E
ZN451CJ
d3000 mosfet
analogue ohmmeter circuit diagram
ZN490
transistor d3000
d3000
TL091
d3000 fet
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20S13
Abstract: No abstract text available
Text: PLESSEY S E M IC O N D U C T O R S 15E D • 7HS0S13 OOCHna T PLESSEY S e m ic o n d u c to r s i* .■ ■. « t t s - t t - o ZNPCM1 SINGLE CHANNEL CODEC FEATURES • • • • • C o n v e rts a d e lta -s ig m a m o d u la te d d ig ita l p u lse s tre a m in to c o m p re s s e d 'A ' la w p cm
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7HS0S13
20S13
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KT784
Abstract: KT207/600 KT207/400 KT774 KT728 KT783 KT728/800 KT728/600 KT773 kt207
Text: Type Typ Maxim um ratings • Grenzdaten 1T A V 1 A It S M UdäM &c A V CC TRIACS IN PLASTIC CASE ; • 3 25 KT205/200 3 25 KT205/400 3 25 KT205/600 U djìm V TRIACS IN PLASTGEHAUSE 100 200 200 400 400 100 100 600 600 I d 2) m ax al bei U dsm tar U cr Iff
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KT205/200
KT205/400
KT205/600
KT207/200
KT207/400
KT207/600
KT772
20Maximum
kt119a
kt120a
KT784
KT774
KT728
KT783
KT728/800
KT728/600
KT773
kt207
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SC146B
Abstract: SC146M SC-146B
Text: NEC TRIAC S C 14 6B ~ S C 14 6M ELECTRON DEVICE The SC146B ~ SC146M are all diffused m old type triac granted Outline Drawing Unitimm RMS On-state current 10 Amps. M AX The glassivation technique applied to pellets’ surface makes this MAX 4 8 series qu ite highly reliable.
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SC146B
SC146M
-220AB
SC146B--
SC146M
SC146B
SC-146B
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ts26
Abstract: DIODE ED 11 T188F TS18 25G30
Text: Fast Thyristors Type Vdrm I trmsm ' tsm V RRM V A kA V dsM~Vdrm, 10 ms, V rsM=V rrm + T v| max ! VT/ I T V TO rT (di/dt) cr (d v /d t)cr V gt ¡GT ^thJC V/kA V m Q A /ps V/|js V mA ° c /w max T ,= Tv¡ = 25°C 25°C 180° el sin °c T vj max DIN IEC 747-6
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Untitled
Abstract: No abstract text available
Text: 2.8 REF, ooooooooooooooooooooo0ooooooooooo0o° Oo0o0o0o0o0o0o0o0o0o0o0o0o0o0o0o0o°o0 OOOO0 o o o o o o o o o o o o o o °o°o0 <DÄG ._ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ °«PUP °0°0° 0°0°0 J3u  °o0o° w©«O o ÄQ jQ « Ä© <DÄ 2.54 TYP. REF. 1.27 TYP. REF.
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EW0050
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hz nec
Abstract: AC10FGM AC10D AC10DGM AC10EGM AC10F6M AC10E AC-10F
Text: NEC T R IA C S ELECTRON DEVICE A G I ODGM to A C 1 0 F G M 10 A MOLD TRIAC The AC10DGM to AC10FGM are all diffused mold typ e triac granted PACKAGE DIMENSIONS 10.5 MAX. , 4 3.6 RMS On-state current 10 Amps, w ith rated voltages up to 600 volts. U n it: mm
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AC10DGM
AC10FGM
AC10FGM
T0-220AB
AC10EGM
J22686
hz nec
AC10D
AC10F6M
AC10E
AC-10F
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NEC 3P4MH
Abstract: nec 3p4m 3P4M 3P2M 3p4mh 3P1MH 3P4M scr 3P1M
Text: NEC GLASS PASSIVATED 3A 4.7Arm s MOLD SCR ELECTRON DEVICE 3P1 M H ,3 P 2 M H ,3 P 4 M H The 3P1MH ~ 3P4MH are P-gate all diffused m old ty p e SCR granted average on-state current 3 Amps (T c = 87°C). O U T L IN E D R A W IN G (Unit : mm) Being applied glassivation
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nec 5p4m
Abstract: nec5p4m 5p4m thyristor motor speed control circuit 5P6M Thyristor NEC thyristor 5P4M nec 5p6m 5p6m 5P6M NEC 5p5m
Text: NEC TH YRISTO RS BfCTRON DEVICE 5P4M, 5P5M, 5P6M 5 A 8 Ar.m .s. THYRISTOR The 5P4M to 5P6M are a P gate all diffused mold type T h yristo r granted PACKAGE D IM ENSIONS 5A m p On-state Average Current (Tc=103 °C) in m illim eters 4.8 MAX. 3.6 FEATURES
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T0-220
NECTOKJ22686
nec 5p4m
nec5p4m
5p4m
thyristor motor speed control circuit 5P6M
Thyristor NEC
thyristor 5P4M
nec 5p6m
5p6m
5P6M NEC
5p5m
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triac control s202se2
Abstract: 11ARMS s202se1 sharp S216SE1 16A260VAC S202SE1
Text: SHARP S202SE1 /S202S E2/S216SE1/S216SE2 S202SE1 /S202SE2 S216SE1/S216SE2 SIP Type SSR for Medium Power Control •Features ■ Outline Dimensions 1. Comforms to European Safety Standard EN60950 (Need of the insulation sheet when mounting external heat sink)
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S202SE1
/S202S
E2/S216SE1/S216SE2
/S202SE2
S216SE1/S216SE2
EN60950)
S202SE2
S216SE1
triac control s202se2
11ARMS
s202se1 sharp
16A260VAC
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T308
Abstract: T930S C122B T188F
Text: Fast Thyristors T yp e V drm V RRM V It r m s m Itsm It a v m ^ c V TO It (d i/d t)cr A kA A 2s A /°C V m il A /p s 10 ms, 10ms, Wj max ^vj max 180° el sin ^vj max ^vj max DIN I EC 747-6 72/85 1,25 1,8 200 V dsm= V drm , V rsm=V rrm+ 100 V T 72 F 200. 800
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F4/61
0QQ2175
000517b
T308
T930S
C122B
T188F
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A190A
Abstract: No abstract text available
Text: C O N V ER T ER G R A D E T H Y R IS T O R Voltage Ratings 500 I J CR 140 U and F Series I t A V 8 5 ° C = 1 5 0 A I 1000 L_ J 1500 L_ J _ L I u 2000 UNIT I— I V rsm V l2t = 7 6 ,0 0 0 A 2s e c V dsm V RATIN GS AND C H A R A C T ER IS T IC S V rrm
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analogue ohmmeter circuit diagram
Abstract: transistor tt 2170 em digital ic cd 4066 BUT18
Text: ZE TE X INC TS » • TÌ70570 DDDbCm 4 ■ 95D 06 0 9 9 T 'S t - t O - e S " ZN451E ZN451CJ 3 y2 digit DVM 1C with external auto-zero DESCRIPTION EATURES External circuits may be included in the auto-zero loop ’ Full-scale reading 1 .9 9 9 m V or lower
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ZN451E
ZN451CJ
Ti7057fl
analogue ohmmeter circuit diagram
transistor tt 2170 em
digital ic cd 4066
BUT18
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PDF
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125RGK
Abstract: No abstract text available
Text: NEC / ELECTRON DEVICE DATA SHEET “ / THYRISTORS . _ /_ 8P4J,8P4J-Z 8 A MOLD THYRISTOR DESCRIPTION The 8P4J and 8P4J-Z are P-gate ail diffu sed m old ty p e T H Y R IS T O R granted average on-state cu rre n t 8 Am ps Tc - 90 cC , w ith rated voltages up to 4 0 0 Volts.
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BTY91-400R
Abstract: BTY91 BTY91 Series DVP 28 sv IBTY91 600R 800R 200A2S bty91 800r
Text: b^E J> N APIER PHILIPS/DISCRETE • b b S B ^ l DDE73T2 TÛT ■ APX _ I I B T Y 9 1 SERIES THYRISTORS Glass-passivated silicon th y ris to rs in m etal envelopes, intended fo r pow er co n tro l and pow er sw itch in g a p p lications.
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IBTY91
BTY91-400R
7Z09370
BTY91
BTY91 Series
DVP 28 sv
600R
800R
200A2S
bty91 800r
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BTW59
Abstract: gt 1436 transistor TO-238AA Mullard gate turn-off Gate Turn-Off Thyristors gate turn off thyristors transistor 1983 GFM 85A
Text: DEVELO PM EN T SAM PLE DATA BTW 59 SERIES T h is in fo r m a tio n is d e riv e d fr o m d e v e lo p m e n t sam ples m ade a v a ilab le f o r e v a lu a tio n . I t does n o t necessarily im p ly th a t th e d evice w ill go in to re g u la r p ro d u c tio n .
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BTW59
238AA
BTW59
1300R
1500R
M83-1436/Y
gt 1436 transistor
TO-238AA
Mullard
gate turn-off
Gate Turn-Off Thyristors
gate turn off thyristors
transistor 1983
GFM 85A
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BTW42
Abstract: BTW42-600R
Text: L.5E D P H I L IP S I N T E R N A T I O N A L B 7 1 1 D ä 2 b DGt.5431 3TD • P H I N Jl BTW42 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes w ith high d V p /d t capabilities. They are intended fo r use in power control circuits and switching systems where high transients can occur e.g. phase
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BTW42
BTW42--600R
1000R.
711002b
BTW38
BTW42-600R
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