sot23-6 marking AVW
Abstract: code AVW sot23-6 marking AVY TPS3808G01-Q1
Text: TPS3808 www.ti.com . SBVS050J – MAY 2004 – REVISED AUGUST 2008 Low Quiescent Current, Programmable-Delay
|
Original
|
PDF
|
TPS3808
SBVS050J
TPS3808xxx
TPS3808
sot23-6 marking AVW
code AVW
sot23-6 marking AVY
TPS3808G01-Q1
|
TPS3808G01-Q1
Abstract: No abstract text available
Text: TPS3808 www.ti.com . SBVS050J – MAY 2004 – REVISED AUGUST 2008 Low Quiescent Current, Programmable-Delay
|
Original
|
PDF
|
TPS3808
SBVS050J
TPS3808G01-Q1
|
TPS3808G01-Q1
Abstract: AVW SOT AVW SOT23
Text: TPS3808 www.ti.com . SBVS050J – MAY 2004 – REVISED AUGUST 2008 Low Quiescent Current, Programmable-Delay
|
Original
|
PDF
|
TPS3808
SBVS050J
TPS3808xxx
TPS3808
TPS3808G01-Q1
AVW SOT
AVW SOT23
|
TPS3808G01-Q1
Abstract: TPS3808G19
Text: TPS3808 www.ti.com . SBVS050J – MAY 2004 – REVISED AUGUST 2008 Low Quiescent Current, Programmable-Delay
|
Original
|
PDF
|
TPS3808
SBVS050J
TPS3808G01-Q1
TPS3808G19
|
TPS3808G01-Q1
Abstract: TPS3808G19
Text: TPS3808 www.ti.com . SBVS050J – MAY 2004 – REVISED AUGUST 2008 Low Quiescent Current, Programmable-Delay
|
Original
|
PDF
|
TPS3808
SBVS050J
TPS3808G01-Q1
TPS3808G19
|
TPS3808G01-Q1
Abstract: TPS3808G19
Text: TPS3808 www.ti.com . SBVS050J – MAY 2004 – REVISED AUGUST 2008 Low Quiescent Current, Programmable-Delay
|
Original
|
PDF
|
TPS3808
SBVS050J
TPS3808G01-Q1
TPS3808G19
|
sot23-6 marking AVW
Abstract: marking AVW sot23-6 marking 131 AVO SOT23-6 tps3808g25dbvt marking avq sot23-6 marking AVR MOSFET sot23-6 TPS3808G01DBV sot23 marking AVW AVW SOT23-6
Text: TPS3808 Actual Size 2,15 mm x 2,3 mm www.ti.com SBVS050 – MAY 2004 Low Quiescent Current, Programmable-Delay Supervisory Circuit • • • • • • • • DESCRIPTION Power-On Reset Generator with Adjustable Delay Time: 1ms to 10s Very Low Quiescent Current: 3-µA typ
|
Original
|
PDF
|
TPS3808
SBVS050
TPS3808xxx
sot23-6 marking AVW
marking AVW
sot23-6 marking 131
AVO SOT23-6
tps3808g25dbvt marking avq
sot23-6 marking AVR
MOSFET sot23-6
TPS3808G01DBV
sot23 marking AVW
AVW SOT23-6
|
marking AVW
Abstract: omap 1510 AVS service manual circuits omap1510 datasheet TPS3808G01DBVT TPS3808G09DBVR TPS3808G09DBVT TPS3808G12 TPS3808G12DBVR TPS3808G12DBVT
Text: TPS3808 Actual Size 2,15 mm x 2,3 mm www.ti.com SBVS050A – MAY 2004 – REVISED JUNE 2004 Low Quiescent Current, Programmable-Delay Supervisory Circuit FEATURES • • • • • • • • DESCRIPTION Power-On Reset Generator with Adjustable Delay Time: 1.25ms to 10s
|
Original
|
PDF
|
TPS3808
SBVS050A
marking AVW
omap 1510
AVS service manual circuits
omap1510 datasheet
TPS3808G01DBVT
TPS3808G09DBVR
TPS3808G09DBVT
TPS3808G12
TPS3808G12DBVR
TPS3808G12DBVT
|
marking AVW
Abstract: omap1510 SBVS050B TPS3808 TPS3808G01DBVR TPS3808G01DBVT TPS3808G09DBVR TPS3808G09DBVT TPS3808G12 TPS3808G12DBVR
Text: TPS3808 www.ti.com SBVS050B – MAY 2004 – REVISED OCTOBER 2004 Low Quiescent Current, Programmable-Delay Supervisory Circuit FEATURES • • • • • • • • DESCRIPTION Power-On Reset Generator with Adjustable Delay Time: 1.25ms to 10s Very Low Quiescent Current: 2.4µA typ
|
Original
|
PDF
|
TPS3808
SBVS050B
marking AVW
omap1510
SBVS050B
TPS3808
TPS3808G01DBVR
TPS3808G01DBVT
TPS3808G09DBVR
TPS3808G09DBVT
TPS3808G12
TPS3808G12DBVR
|
Untitled
Abstract: No abstract text available
Text: UF1501/S - UF1507/S 1.5A ULTRA-FAST RECTIFIER Features Diffused Junction Ultra-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 50A Peak Low Reverse Leakage Current Plastic Material: UL Flammability
|
OCR Scan
|
PDF
|
UF1501/S
UF1507/S
DO-41
MIL-STD-202,
DO-41
DO-15
DO-15
DS25006
|
BYT40Y
Abstract: No abstract text available
Text: BYT40Y 1.0A HIGH VOLTAGE GLASS BODY RECTIFIER Features Hermetically Sealed Glass Body Construction High Voltage to 1600V with Low Leakage Surge Overload Rating to 25A Peak — A - ► < i ,-II— T Mechanical Data_ D Case: DOT-30B, Glass
|
OCR Scan
|
PDF
|
BYT40Y
DOT-30B,
MIL-STD-202,
DQT-30B
BYT40Y
DS30032
|
Untitled
Abstract: No abstract text available
Text: ES3A/B - ES3D/B 3.0A SURFACE MOUNT SUPER-FAST RECTIFIER Features Glass Passivated Die Construction Super-Fast Recovery Time For High Efficiency Low Forward Voltage Drop and High Current Capability Surge Overload Rating to 100A Peak Ideally Suited for Automated Assembly
|
OCR Scan
|
PDF
|
DS14003
|
UF1001
Abstract: UF1003 UF1004 UF1005 UF1007 DS25002
Text: r w \T ^ r r I N C O R P O R A T E UF1001 - UF1007 1.0A ULTRA-FAST RECTIFIER D Features Diffused Junction Ultra-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Low Reverse Leakage Current Surge Overload Rating to 30A Peak
|
OCR Scan
|
PDF
|
UF1001
UF1007
MIL-STD-202,
DO-41
UF1004
DS25002
UF1007
UF1003
UF1004
UF1005
|
marking AVW
Abstract: AVW MARKING
Text: PR2001G - PR2007G 2.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 80A Peak Low Reverse Leakage Current
|
OCR Scan
|
PDF
|
PR2001G
PR2007G
DO-15
IL-STD-202,
DS27005
marking AVW
AVW MARKING
|
|
|
D0-201AD
Abstract: PR3001 PR3005
Text: PR3001 - PR3005 rw \T ^ rr I N C O R P O R A T E 3.0A FAST RECOVERY RECTIFIER D Features_ • • • • • • Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 150 A Peak
|
OCR Scan
|
PDF
|
PR3001
PR3005
D0-201AD
MIL-STD-202,
DS26014
PR3005
D0-201AD
|
rjge
Abstract: No abstract text available
Text: bELT/1 APE' 'IFI-l'.-.TION FOR .-.PPF: '\-.L Rev.: C C u s to m e r P a r t No.: Delta P a r t No.: RJGE-12BF5290DR P a r t Name: RJ45 ICM LAN FILTER IN CONNECTER" 12 PORT (RoHS COMPLIANT 4. M ech anical D im ension: G reen/Y ellow LED 0O.45[0O.O18] Unit : m m /in c h
|
OCR Scan
|
PDF
|
RJGE-12BF5290DR
l-40M
40-60M
60-80MHz
t-100M
2250VDC
60Sec
100KHz
350uH
100KHz
rjge
|
potentiometer vishay draloric 61
Abstract: potentiometer draloric 61 draloric cermet potentiometer 10K LIN 61H draloric cermet potentiometer Sternice Potentiometer s62h draloric Potentiometer vishay 10mq vishay draloric Potentiometer PARV6
Text: MODELS PRV6 and PARV6 Potentiometers Cermet PRV6 and Conductive Plastic (PARV6) Fully Sealed FEATURES • • • • • • • • PRV6: 1.5 watt at + 70°C. PARV6: 0.75 watt at + 70°C. Military performance. Low cost. Fully sealed and panel sealed. Compatible RV6 (MIL-R-94).
|
OCR Scan
|
PDF
|
MIL-R-94)
potentiometer vishay draloric 61
potentiometer draloric 61
draloric cermet potentiometer 10K LIN 61H
draloric cermet potentiometer
Sternice Potentiometer
s62h
draloric Potentiometer
vishay 10mq
vishay draloric Potentiometer
PARV6
|
Untitled
Abstract: No abstract text available
Text: DESC. ITEM Q’TY HOUSING TREATMENT MATERIAL THERMOPLASTIC UL 94V-0 RATED MOLDED, BLACK REMARK CONTACT SEE NOTE BELOW PHOSPHOR BRONZE A NICKEL PLATING OVER ALL THICKNESS: 50 u” MIN. B) TIN/LEAD PLATING OVER NICKEL, THICKNESS 150 n ” MIN. C) CONTACT AREA GOLD PLATING,
|
OCR Scan
|
PDF
|
MIL-STD-202F,
MIL-STD-1344A,
HC990326
HC961722
HC961128
HC96371
forll/23
|
Untitled
Abstract: No abstract text available
Text: TDC1141 T R w w TDC1141 Monolithic Digital To Analog Converter 10 Bit, 50Msps, 12ns Settling Time The TDC1141 is an ECL com patible, 10-bit m onolithic D/A converter capable of converting digital data into an analog current or voltage at data rates in excess of 50 Megasamples-per second Msps .
|
OCR Scan
|
PDF
|
TDC1141
TDC1141
50Msps,
10-bit
TDC1141.
|
Untitled
Abstract: No abstract text available
Text: HONE YWEL L / S S E C 3ÖE D 4ssia?a ooddsms a H0 N3 '•■V Military Products 32K X Preliminary 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION OTHER • Fabricated with RICMOS Bulk 0.8 nm Process • Total Dose Hardness through 1x106 rad Si02
|
OCR Scan
|
PDF
|
HC6856
1x106
1x101
1x109
256Kx
|
Untitled
Abstract: No abstract text available
Text: Honeywell HC6364 Military Products 8K x 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 urn Process • Total Dose Hardness through 1x106 rad S i02 • Neutron Hardness through 1x1014cm '2 • Access Time of 25 nsec (typical)
|
OCR Scan
|
PDF
|
HC6364
1x106
1x1014cm
|
Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON 32 M EGx72 • REGISTERED SDRAM DIMM MT36LSDT3272 SYNCHRONOUS DRAM MODULE For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html PIN ASSIGNMENT Front View 168-Pin DIMM FEATURES • JEDEC-standard 168-pin, dual in-line memory module
|
OCR Scan
|
PDF
|
MT36LSDT3272
168-pin,
PC100-
PC133-compliant
256MB
|
Untitled
Abstract: No abstract text available
Text: Military Standard Products UT7156 Radiation-Hardened 32K x 8 SRAM Advanced Data Sheet M I C R O E L E C T R O N I C March 1997 systems FEATURES □ □ □ □ □ □ □ □ □ □ INTRODUCTION 40ns, 55ns, and 70ns maximum address access time Asynchronous operation for compatibility with industrystandard 32K x 8 SRAM
|
OCR Scan
|
PDF
|
UT7156
MIL-STD-883
0E-10
36-pin
50-mil
28-pin
100-rai]
256KSRAM-4-3-1997
|
1000-7227
Abstract: No abstract text available
Text: TDC1141 D/A TDC1141 Monolithic Digital-to-Analog Converter 10-Bit, 50 Msps, 12 ns Settling Time Description Features The TDC1141 is a ECL compatible, 10-bit monolithic ♦ 10-bit resolution D/A converter capable of converting digital data into an ♦ 50 Msps data rate
|
OCR Scan
|
PDF
|
TDC1141
TDC1141
10-Bit,
10-bit
TDC1141.
10H176
TDC1141R3C
1000-7227
|
