2N7218
Abstract: 2N7219 2N7221 2N7222 JANTX2N7218 JANTX2N7219 JANTX2N7221 JANTX2N7222 JANTXV2N7218 JANTXV2N7219
Text: 2N7218, JANTX2N7218, JANTXV2N7218 2N7219, JANTX2N7219, JANTXV2N7219 2N7221, JANTX2N7221, JANTXV2N7221 2N7222, JANTX2N7222, JANTXV2N7222 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/596 100V Thru 500V, Up to 28A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated
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2N7218,
JANTX2N7218,
JANTXV2N7218
2N7219,
JANTX2N7219,
JANTXV2N7219
2N7221,
JANTX2N7221,
JANTXV2N7221
2N7222,
2N7218
2N7219
2N7221
2N7222
JANTX2N7218
JANTX2N7219
JANTX2N7221
JANTX2N7222
JANTXV2N7218
JANTXV2N7219
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JANTXV2N7224
Abstract: 2N7224 JANTXV 2N7228 JANTX mosfet data sheet JANTX2N7224 JANTX2N7225 2N7228 JANTX mosfet JANTX2N7228 2N7224 2N7225 2N7227
Text: 2N7224, JANTX2N7224, JANTXV2N7224 2N7225, JANTX2N7225, JANTXV2N7225 2N7227, JANTX2N7227, JANTXV2N7227 2N7228, JANTX2N7228, JANTXV2N7228 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/592 100V Thru 500V, Up to 34A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated
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2N7224,
JANTX2N7224,
JANTXV2N7224
2N7225,
JANTX2N7225,
JANTXV2N7225
2N7227,
JANTX2N7227,
JANTXV2N7227
2N7228,
JANTXV2N7224
2N7224 JANTXV
2N7228 JANTX mosfet data sheet
JANTX2N7224
JANTX2N7225
2N7228 JANTX mosfet
JANTX2N7228
2N7224
2N7225
2N7227
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2N3033
Abstract: No abstract text available
Text: , One, J. C/ TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N3033 SILICON NPN SWITCHING TRANSISTOR DESCRIPTION: The 2N3033 is Designed for Avalanche-Mode Very Fast Switching Applications. PACKAGE STYLE TO-18
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2N3033
2N3033
200mA
100mA
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2N7261U
Abstract: IRHE7130 2N7261 equivalent IRHE8130 JANSH2N7261U JANSR2N7261U
Text: PD - 91806A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR IRHE7130 IRHE8130 JANSR2N7261U JANSH2N7261U N CHANNEL 100Volt, 0.18Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage
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1806A
IRHE7130
IRHE8130
JANSR2N7261U
JANSH2N7261U
100Volt,
1x106
2N7261U
IRHE7130
2N7261 equivalent
IRHE8130
JANSH2N7261U
JANSR2N7261U
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL POWER MOSFET 2N6849HP • MOSFET Transistor In A Hermetic Metal TO-205AD Package • Single Pulse Avalanche Energy Rated • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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2N6849HP
O-205AD
-100V
-100V
500mJ
O-205AD)
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p-channel mosfet
Abstract: 2N7522 p-channel 200V 2n752 iGSS 80 nA Vgs 0v
Text: Preliminary Data Sheet Repetitive Avalanche and dv/dt Rated MOSFET Transistor P-Channel 2N7522 200Volt, 0.505 Ω , RAD Hard MOSFET Package: SMD-0.5 R5 Product Summary Hex Size Technology BV DSS RDS on ID 3 RAD Hard -200V 0.505 Ω -8.0A Absolute Maximum Ratings
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2N7522
200Volt,
-200V
-160V,
p-channel mosfet
2N7522
p-channel 200V
2n752
iGSS 80 nA Vgs 0v
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL POWER MOSFET 2N6849HP • MOSFET Transistor In A Hermetic Metal TO-205AD Package • Single Pulse Avalanche Energy Rated • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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2N6849HP
O-205AD
-100V
500mJ
O-205AD)
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2N7261
Abstract: 2N7261 equivalent reverse bias diode characterstics IRHF7130 IRHF8130 JANSH2N7261 JANSR2N7261
Text: PD - 90653B IRHF7130 IRHF8130 JANSR2N7261 JANSH2N7261 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL 100Volt, 0.18Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage
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90653B
IRHF7130
IRHF8130
JANSR2N7261
JANSH2N7261
100Volt,
1x106
2N7261
2N7261 equivalent
reverse bias diode characterstics
IRHF7130
IRHF8130
JANSH2N7261
JANSR2N7261
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2SC4832
Abstract: 2SA2151
Text: 2SC6011 Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown
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2SC6011
SSE-23013
2SC4832
2SA2151
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a2151a
Abstract: 2SA2151A SANKEN AUDIO 2SA1668A sanken power audio
Text: 2SA2151A Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown
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2SA2151A
2SC6011A
2SA1668A
a2151a
SANKEN AUDIO
2SA1668A
sanken power audio
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transistor a2151
Abstract: A2151 2SA2151 2sc6011 Sanken Transistor Mt 200 SANKEN AUDIO data A2151 ic pa sanken SC102 YG6260
Text: 2SA2151 Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown
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2SA2151
SSE-23012
transistor a2151
A2151
2SA2151
2sc6011
Sanken Transistor Mt 200
SANKEN AUDIO
data A2151
ic pa sanken
SC102
YG6260
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2SC4832
Abstract: c6011 sanken c6011 2sc6011 Sanken Transistor Mt 200 2SA2151 sanken high power audio amplifier SANKEN AUDIO c6011 transistor 2SA21
Text: 2SC6011 Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown
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2SC6011
SSE-23013
2SC4832
c6011
sanken c6011
2sc6011
Sanken Transistor Mt 200
2SA2151
sanken high power audio amplifier
SANKEN AUDIO
c6011 transistor
2SA21
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Untitled
Abstract: No abstract text available
Text: 2SA2151A Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown
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2SA2151A
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c6011a
Abstract: 2SC6011A SANKEN AUDIO NPN c6011a sanken power transistor
Text: 2SC6011A Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown
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2SC6011A
2SA2151A
2SC4382A
c6011a
SANKEN AUDIO
NPN c6011a
sanken power transistor
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c6011a
Abstract: NPN c6011a
Text: 2SC6011A Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown
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2SC6011A
SSE-23015
c6011a
NPN c6011a
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sanken c6011
Abstract: 2SC4832 c6011 2SC6011 c6011 transistor NPN c6011 2SA2151 sanken audio "Sanken Rectifiers" "Sanken Electric"
Text: 2SC6011 Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown
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2SC6011
2SA2151
2SC4832
sanken c6011
2SC4832
c6011
c6011 transistor
NPN c6011
2SA2151
sanken audio
"Sanken Rectifiers"
"Sanken Electric"
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transistor a2151
Abstract: A2151 2sa2151 equivalent for 2sa1668 sanken a2151 2sc6011 sanken audio sanken transistors mold "Sanken Rectifiers"
Text: 2SA2151 Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown
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2SA2151
2SC6011
2SA1668
transistor a2151
A2151
equivalent for 2sa1668
sanken a2151
2sc6011
sanken audio
sanken transistors mold
"Sanken Rectifiers"
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c6011a
Abstract: 2SC6011A 2sc4382a 2SA2151A c6011 C6011A OR ITS EQUIVALENT SANKEN AUDIO Sanken Transistor Mt 200 NPN c6011a G746
Text: 2SC6011A Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown
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2SC6011A
SSE-23015
c6011a
2SC6011A
2sc4382a
2SA2151A
c6011
C6011A OR ITS EQUIVALENT
SANKEN AUDIO
Sanken Transistor Mt 200
NPN c6011a
G746
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL POWER MOSFET IRFF9130 / 2N6849 • MOSFET Transistor In A Hermetic Metal TO-205AF Package • Single Pulse Avalanche Energy Rated • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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IRFF9130
2N6849
O-205AF
-100V
500mJ
O-205AF)
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diode sg 94
Abstract: GC522 diode sg 64
Text: r Z Z SGS-THOMSON Ä 7# S TD 2 N 50 Raoei ILE gra©M][](£S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TD 2N 50 V dss RDS(on Id 500 V < 5.5Í1 2 A • . . . . TYPICAL Ros(on) = 4.5 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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O-251)
O-252)
O-251
O-252
L681001
diode sg 94
GC522
diode sg 64
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Untitled
Abstract: No abstract text available
Text: S G S - T H O M S O N ¿ 5 S T K 2N 80 ¡m e ra « 7 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V STK2N80 dss 800 V R D S o n Id <7 a 2.1 A • TYPICAL RDS(on) = 5 0 . . AVALANCHE RUGGED TECHNOLOGY ■ . . . . 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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STK2N80
OT-194
P032B
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Untitled
Abstract: No abstract text available
Text: ¿57 SGS-THOMSON ¡m era « STP2N60 STP2N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STP2N60 STP2N60FI V dss RDS on Id 600 V 600 V < 3 .5 Q. < 3 .5 Q. 2.9 A 2.2 A • TYPICAL RDS(on) = 3.2 Q . . AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED
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STP2N60
STP2N60FI
V60/FI
ISQWATT220
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2N7236
Abstract: M6554 mosfet K 1377 IRFM9140 transistor 3et 2sc 1740 transistor 2SC 1384
Text: Data Sheet No. PD-9.495D INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL IRFM914Q 2N 7236 JANS2IM7236 JAIMTX2N723G JANTXV2N7236 R -100 Volt, 0.20 Ohm HEXFET The HEXFET® technology is the key to International
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IRFM914Q
MIL-S-19500/59B]
IRFM9140D
IRFM9140U
O-254
MIL-S-19500
43S54S2
2N7236
M6554
mosfet K 1377
IRFM9140
transistor 3et
2sc 1740 transistor
2SC 1384
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IRFM9240
Abstract: 2N7237 23XT
Text: Data Sheet No. PD-9.497D INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE RATED AND dv/dt RATED IRFM9S40 2N 7237 JANS2N7237 JANTX2N7237 JANTXV2N7237 HEXFET TRANSISTOR : P-CHANNEL REF: M IL -S -1 9 5 0 0 /5 9 5 ] -200 Volt, 0.51 Ohm HEXFET Product Summary
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IRFM9S40
JANS2N7237
JANTX2N7237
JANTXV2N7237
IRFM9240D
IRFM9240U
O-254
MIL-S-19500
I-388
IRFM9240
2N7237
23XT
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