MAX1932
Abstract: No abstract text available
Text: 19-4557; Rev 1; 3/11 76V, APD, Bias Output Stage with Current Monitoring The DS1842 integrates the discrete high-voltage components necessary for avalanche photodiode APD bias and monitor applications. A switch FET is used in conjunction with an external DC-DC controller to create
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DS1842
14-ease
DS1842
MAX1932
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high voltage current mirror
Abstract: DS1842 avalanche photodiode bias MAX1932 14 TDFN-EP GPON block diagram Current Mirror FET current mirror rise time apd
Text: 19-4557; Rev 0; 4/09 76V, APD, Bias Output Stage with Current Monitoring The DS1842 integrates the discrete high-voltage components necessary for avalanche photodiode APD bias and monitor applications. A switch FET is used in conjunction with an external DC-DC controller to create
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DS1842
14-Pin
DS1842
T1433
high voltage current mirror
avalanche photodiode bias
MAX1932
14 TDFN-EP
GPON block diagram
Current Mirror FET
current mirror
rise time apd
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DS1875
Abstract: GPON APD DS1842 JESD51-7 MAX1932
Text: 19-4557; Rev 1; 3/11 76V, APD, Bias Output Stage with Current Monitoring The DS1842 integrates the discrete high-voltage components necessary for avalanche photodiode APD bias and monitor applications. A switch FET is used in conjunction with an external DC-DC controller to create
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DS1842
14-Pin
DS1842
DS1875
GPON APD
JESD51-7
MAX1932
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GPON block diagram
Abstract: ds1875 high voltage current mirror side mirror control DS1842
Text: 19-4994; Rev 0; 10/09 KIT ATION EVALU LE B A IL A AV 76V, APD, Bias Output Stage with Current Monitoring The DS1842A integrates the discrete high-voltage components necessary for avalanche photodiode APD bias and monitor applications. A switch FET and precision voltage-divider network are used in conjunction with an external DC-DC controller to create a boost
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DS1842A
T1433
GPON block diagram
ds1875
high voltage current mirror
side mirror control
DS1842
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APD500-LCC
Abstract: No abstract text available
Text: APD500-LCC v 1.1 05.03.2014 Description APD500-LCC is a silicon semiconductor avalanche photodiode with an active area of 500 µm. It features extremely fast rise time of 0.6 ns, high gain at low bias voltage, and low capacitance. APD500-LCC is typically used for Laser Range Finding and LIDAR applications.
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APD500-LCC
APD500-LCC
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APD230-LCC
Abstract: No abstract text available
Text: APD230-LCC v 1.1 05.03.2014 Description APD230-LCC is a silicon semiconductor avalanche photodiode with an active area of 230 µm. It features extremely fast rise time of 250 ps, high gain at low bias voltage, and low capacitance. APD230-LCC is typically used for Laser Range Finding and LIDAR applications.
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APD230-LCC
APD230-LCC
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Untitled
Abstract: No abstract text available
Text: 19-4994; Rev 1; 9/11 KIT ATION EVALU LE B A IL A AV 76V, APD, Dual Output Current Monitor The DS1842A integrates the discrete high-voltage components necessary for avalanche photodiode APD bias and monitor applications. A precision voltage-divider network is used in conjunction with an
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DS1842A
DS1842A
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DS4830
Abstract: JESD51-7 OLT block diagram GPON high voltage current mirror GPON APD
Text: 19-4994; Rev 1; 9/11 KIT ATION EVALU LE B A IL A AV 76V, APD, Dual Output Current Monitor The DS1842A integrates the discrete high-voltage components necessary for avalanche photodiode APD bias and monitor applications. A precision voltage-divider network is used in conjunction with an
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DS1842A
DS1842A
DS4830
JESD51-7
OLT block diagram GPON
high voltage current mirror
GPON APD
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Si apd photodiode
Abstract: parameter vk 45 Si apd photodiode 700 nm 2SC3138Y apd 400- 700 nm 2SC3138-Y S8328 420nm quadrant avalanche photodiode Photodiode apd high sensitivity
Text: US Patent Pending APD Si APD S8328 Quadrant APD with high bluish-violet sensitivity S8328 is a quadrant APD Avalanche Photodiode having a gain of 2-100. The peak gain lies at 420 nm and creates a high sensitivity for blue to violet minor signals. An on-chip bias control circuit gives the most stable output from low to high temperature.
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S8328
S8328
SE-171
KAPD1006E01
Si apd photodiode
parameter vk 45
Si apd photodiode 700 nm
2SC3138Y
apd 400- 700 nm
2SC3138-Y
420nm
quadrant avalanche photodiode
Photodiode apd high sensitivity
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Si apd photodiode
Abstract: Si apd photodiode rangefinder photodiode Avalanche photodiode APD FOR POWER APD Ghz apd photodetector C5658 SE-171 is 53 APD photodiode 8 Ghz
Text: MODULE APD module C5658 Detects optical signals at 1 GHz, with high sensitivity APD module C5658 is a highly sensitive photodetector consisting of a Si APD avalanche photodiode , a bias power supply and a low-noise amplifier, all integrated into a compact case. The APD used has an effective active area of φ0.5 mm to allow efficient coupling to a light beam in
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C5658
C5658
C5658)
SE-171
KACC1023E01
Si apd photodiode
Si apd photodiode rangefinder
photodiode Avalanche photodiode APD FOR POWER
APD Ghz
apd photodetector
is 53
APD photodiode 8 Ghz
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Si apd photodiode
Abstract: Si apd photodiode rangefinder APD, applications, bias supply C5658 SE-171
Text: MODULE APD module C5658 Detects optical signals at 1 GHz, with high sensitivity APD module C5658 is a highly sensitive photodetector consisting of a Si APD avalanche photodiode , a bias power supply and a low-noise amplifier, all integrated into a compact case. The APD used has an effective active area of φ0.5 mm to allow efficient coupling to a light beam in
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C5658
C5658
C5658)
SE-171
KACC1023E03
Si apd photodiode
Si apd photodiode rangefinder
APD, applications, bias supply
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C56-58
Abstract: hamamatsu low dark current APD
Text: MODULE APD module C5658 Detects optical signals at 1 GHz, with high sensitivity APD module C5658 is a highly sensitive photodetector consisting of a Si APD avalanche photodiode , a bias power supply and a low-noise amplifier, all integrated into a compact case. The APD used has an effective active area of φ0.5 mm to allow efficient coupling to a light beam in
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C5658
C5658
C5658)
SE-171
KACC1023E02
C56-58
hamamatsu low dark current APD
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Photodiode
Abstract: avalanche photodiode bias simple Photodiode APP4122 MAX4007 MAX4008 MAX4037 MAX6007 Photodiode apd photodiode bias circuit
Text: Maxim > App Notes > Amplifier and Comparator Circuits Optoelectronics Keywords: MAX4007, Current Monitor, Current monitoring, current regulator, current mirror, photodiode current Dec 21, 2007 APPLICATION NOTE 4122 Simple Regulator Provides Constant Voltage for High-Side Current
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MAX4007,
com/an4122
MAX4007:
MAX4008:
MAX4037:
AN4122,
APP4122,
Appnote4122,
Photodiode
avalanche photodiode bias
simple Photodiode
APP4122
MAX4007
MAX4008
MAX4037
MAX6007
Photodiode apd
photodiode bias circuit
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avalanche photodiode bias
Abstract: No abstract text available
Text: PRELIMINARY TECHNICAL DATA Avalanche Photodiode Bias Controller and Wide-range 5 nA - 5 mA Current Monitor ADL5317 FEATURES Accurately sets avalanche photodiode bias voltage Wide bias range from 6 V to 75 V set Using 3V-compatible control interface Monitors photodiode current (5:1 ratio) over 6 decades
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ADL5317
16-lead
ADL5317
ADL5317XCP
ADL5317-EVAL
CP-16
PR05456-0-2/05
avalanche photodiode bias
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ADL5317
Abstract: for APD bias high-voltage
Text: PRELIMINARY TECHNICAL DATA Avalanche Photodiode Bias Controller and Wide-range 5 nA - 5 mA Current Monitor ADL5317 FEATURES Accurately sets avalanche photodiode bias voltage Wide bias range from 6 V to 75 V set Using 3V-compatible control interface Monitors photodiode current (5:1 ratio) over 6 decades
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ADL5317
16-lead
ADL5317
ADL5317XCP
ADL5317-EVAL
PR05456-0-2/05
CP-16
for APD bias high-voltage
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10G APD chip
Abstract: PSS-AD230 Photodiode apd amplifier apd model 10G APD photodiode Avalanche photodiode avalanche photodiode receiver AD230-2.3G-TO5 apd 850 nm 130 ps PSS-AD230-2
Text: Pacific Silicon Sensor Inc. Data Sheet PSS-AD230-2.3G-TO5 OPTICAL DATA RECEIVER USING AN AVALANCHE PHOTODIODE AND A 2.3 GHz AMPLIFIER PSS-AD230-2.3G-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a
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PSS-AD230-2
10G APD chip
PSS-AD230
Photodiode apd amplifier
apd model
10G APD
photodiode Avalanche photodiode
avalanche photodiode receiver
AD230-2.3G-TO5
apd 850 nm 130 ps
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10G APD chip
Abstract: Photodiode apd amplifier 500 watts amplifier schematic diagram PSS-AD500-1 10G APD photodiode Avalanche photodiode APD photodiode Avalanche photodiode APD FOR POWER avalanche photodiode receiver AD500 PSS-AD500
Text: Pacific Silicon Sensor Inc. Data Sheet PSS-AD500-1.3G-TO5 OPTICAL DATA RECEIVER USING AN AVALANCHE PHOTODIODE AND A 1.3 GHz AMPLIFIER PSS-AD500-1.3G-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a
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PSS-AD500-1
10G APD chip
Photodiode apd amplifier
500 watts amplifier schematic diagram
10G APD
photodiode Avalanche photodiode APD
photodiode Avalanche photodiode APD FOR POWER
avalanche photodiode receiver
AD500
PSS-AD500
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Untitled
Abstract: No abstract text available
Text: P RE L I M I NARY Detectors UV-Enhanced Silicon Avalanche Photodiode SUR-Series Description The SUR-Series is based on a silicon “reach-through” structure with high sensitivity in the DUV/UV wavelength range . Many applications particularly in the medical and
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SAE500NX
Abstract: SAE230NS avalanche photodiode noise factor 0E-07 SAE230NX m8 smd rise time avalanche photodiode
Text: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.
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SAE230NS
SAE500NS
SAE230NX
SAE500NX
avalanche photodiode noise factor
0E-07
m8 smd
rise time avalanche photodiode
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TO-59 Package
Abstract: No abstract text available
Text: Detectors Silicon Avalanche Photodiode SAR-/SARP-Series Description The SAR500-Series is based on a “reach-through” structure for excellent quantum efficiency and high speed. The peak sensitivity in the NIR region enables rangefinding applications with pulsed laser diodes. A variety of package options is available.
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SAR500-Series
SARP500-Series
SAR500
SARP500
TO-59 Package
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Untitled
Abstract: No abstract text available
Text: Detectors Silicon Avalanche Photodiode SAR-/SARP-Series Description The SAR500-Series is based on a “reach-through” structure for excellent quantum efficiency and high speed. The peak sensitivity in the NIR region enables rangefinding applications with pulsed laser diodes. A variety of package options is available.
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SAR500-Series
SARP500-Series
SAR500
SARP500
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pyroelectric amplifier circuit
Abstract: "Pyroelectric Detectors" pyroelectric detector P4488
Text: Applicable Equipments APD Modules The APD Module series are high-sensitivity photodetectors that integrate an APD avalanche photodiode and a fast-response, low-noise current-to-voltage conversion amplifier circuit, along with the bias power supply. The following 4 types are available
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C5331
C5460
C5658
C5658.
H4741,
H3651,
H4018
P4488
pyroelectric amplifier circuit
"Pyroelectric Detectors"
pyroelectric detector
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S4753
Abstract: Photodiode apd amplifier S4751 photodiode 10Ghz PIN APD, applications, bias supply PIN photodiode 5ghz rise time apd APD 10ghz S4752
Text: C APD MODULES An APD high-speed amplifier and power supply on a compact board The APD Module series are high-sensitivity photodetectors that integrate an APD avalanche photodiode and a fast-response, low-noise current-to-voltage conversion amplifier circuit, along with the bias power supply. The follow
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C5331
C5460
C5658
C4890
C4890
S4753
Photodiode apd amplifier
S4751
photodiode 10Ghz PIN
APD, applications, bias supply
PIN photodiode 5ghz
rise time apd
APD 10ghz
S4752
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f0pf
Abstract: KPDB0001EA C0002EA photodiode PN S4753 GaAsP Laser Diode
Text: Characteristics and Use of Photodiodes INTRODUCTION Photodiodes are sem iconductor light sensors that generate a current or voltage when the P-N junction in the sem iconductor is illum inated by light. The term photodiode can be broadly defined to include even solar batteries, but it usually refers to sensors used to
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780nm
B0020EA
B0016EA
f0pf
KPDB0001EA
C0002EA
photodiode PN
S4753
GaAsP Laser Diode
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