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    AVALANCHE PHOTODIODE 300 NM Search Results

    AVALANCHE PHOTODIODE 300 NM Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    ADPD2140WBCPZN-R7 Analog Devices Discrete Filtered Photodiode Visit Analog Devices Buy
    ADPD2140WBCPZN-RL Analog Devices Discrete Filtered Photodiode Visit Analog Devices Buy
    ADPD2140BCPZN-R7 Analog Devices Discrete Filtered Photodiode Visit Analog Devices Buy
    ADPD2140BCPZN-RL Analog Devices Discrete Filtered Photodiode Visit Analog Devices Buy
    EVAL-CN0272-SDPZ Analog Devices 2MHz photodiode preamp & dark Visit Analog Devices Buy
    DC634A Analog Devices LT1930AES5 - Avalanche Photodi Visit Analog Devices Buy

    AVALANCHE PHOTODIODE 300 NM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DATASHEET Photon Detection C30737LH-300 Series Low Capacitance Silicon Avalanche Photodiode in Leadless Ceramic Carrier SMT Package for High Volume Laser Meter and Range Finding Applications Key Features •      Low capacitance, <1pF, for high


    Original     		PDF C30737LH-300 C30737LH-Rev

    SAE230VX

    Abstract: SAE500VX SAE500VS SAE500 avalanche photodiode
    Text: Silicon Avalanche Photodiode SAE-Series Red-Enhanced DESCRIPTION The SAE500VS epitaxial avalanche photodiode is a general purpose APD with high responsivity and extremely fast rise and fall times through out the 400 to 1000 nm wavelength range. The peak responsivity


    Original     		PDF SAE500VS SAE500VX SAE230VX SAE500 avalanche photodiode

    SAE230VS

    Abstract: No abstract text available
    Text: Detectors Silicon Avalanche Photodiode SAE-Series Red-Enhanced Description The SAE230VS and SAE500VS epitaxial avalanche photodiodes are general purpose APD with high responsivity and extremely fast rise and fall times through out the 400 to 1000 nm wavelength range. The peak responsivity at 650 nm is ideally suited to


    Original     		PDF SAE230VS SAE500VS

    Untitled

    Abstract: No abstract text available
    Text: Silicon Avalanche Photodiode SAE-Series Red-Enhanced DESCRIPTION The SAE500VS epitaxial avalanche photodiode is a general purpose APD with high responsivity and extremely fast rise and fall times through out the 400 to 1000 nm wavelength range. The peak


    Original     		PDF SAE500VS SAE500VX

    Untitled

    Abstract: No abstract text available
    Text: Silicon Avalanche Photodiode SAE-Series Red-Enhanced DESCRIPTION The SAE500VS epitaxial avalanche photodiode is a general purpose APD with high responsivity and extremely fast rise and fall times through out the 400 to 1000 nm wavelength range. The peak


    Original     		PDF SAE500VS SAE500VX

    avalanche photodiode bias and high voltage

    Abstract: SAE500VS SAE500VX photodiode responsivity 1.1 avalanche photodiode bias
    Text: Silicon Avalanche Photodiode SAE-Series Red-Enhanced DESCRIPTION The SAE500VS epitaxial avalanche photodiode is a general purpose APD with high responsivity and extremely fast rise and fall times through out the 400 to 1000 nm wavelength range. The peak


    Original     		PDF SAE500VS SAE500VX avalanche photodiode bias and high voltage SAE500VX photodiode responsivity 1.1 avalanche photodiode bias

    avalanche photodiode bias

    Abstract: sae500vs
    Text: Silicon Avalanche Photodiode SAE-Series Red-Enhanced DESCRIPTION The SAE500VS epitaxial avalanche photodiode is a general purpose APD with high responsivity and extremely fast rise and fall times through out the 400 to 1000 nm wavelength range. The peak responsivity


    Original     		PDF SAE500VS SAE500VX avalanche photodiode bias

    SAE500NX

    Abstract: SAE230NS avalanche photodiode noise factor 0E-07 SAE230NX m8 smd rise time avalanche photodiode
    Text: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.


    Original     		PDF SAE230NS SAE500NS SAE230NX SAE500NX avalanche photodiode noise factor 0E-07 m8 smd rise time avalanche photodiode

    Untitled

    Abstract: No abstract text available
    Text: Detectors Silicon Avalanche Photodiode SAE-Series NIR-Enhanced Description The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range. The responsivity is optimised for 900 nm for use


    Original     		PDF SAE230NS SAE500NS

    . LIDAR

    Abstract: SARF500
    Text: Silicon Avalanche Photodiode SARF-Series DESCRIPTION The SARF-Series is based on a “reach-through“ structure for excellent quantum efficiency and high speed, and has been optimised for 905 nm range finding applications. The device is ideal for low-gain


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.


    Original     		PDF SAE230NS SAE500NS SAE23

    SAT800X

    Abstract: SAT3000 SAT3000x TO-37 avalanche Photodiode 300 nm . LIDAR photodiode SAT3000
    Text: Silicon Avalanche Photodiode SAT-Series DESCRIPTION The SAT-Series is based on a “reach-through” structure for excellent quantum efficiency, high speed and targeted for the 1060 nm detection region. The chip is hermetically sealed in a modified TO-8 / TO-5


    Original     		PDF sat3000x SAT800X SAT3000 TO-37 avalanche Photodiode 300 nm . LIDAR photodiode SAT3000

    Untitled

    Abstract: No abstract text available
    Text: DATASHEET Photon Detection C30985E 25-Element Silicon Avalanche Photodiode Si APD Linear Array The C30985E is a 25-element silicon avalanche photodiode (Si APD) consisting of a double diffused “reach through” structure. This structure provides high responsivity up to 1060 nm incidence radiation and even beyond, as well as


    Original     		PDF C30985E 25-Element C30985E

    Untitled

    Abstract: No abstract text available
    Text: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.


    Original     		PDF SAE230NS SAE500NS SAE23

    C30902EH

    Abstract: C30902SH-DTC PerkinElmer Avalanche Photodiode geiger apd avalanche photodiodes geiger C30902 APD, laser, range, finder avalanche photodiode ghz C30921EH
    Text: High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview PerkinElmer’s C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as


    Original     		PDF C30902EH C30921EH DTS0408 C30902SH-DTC PerkinElmer Avalanche Photodiode geiger apd avalanche photodiodes geiger C30902 APD, laser, range, finder avalanche photodiode ghz

    avalanche photodiode bias

    Abstract: No abstract text available
    Text: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.


    Original     		PDF SAE230NS SAE500NS SAE230NX avalanche photodiode bias

    Untitled

    Abstract: No abstract text available
    Text: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.


    Original     		PDF SAE230NS SAE500NS SAE230NX

    C30902SH-DTC

    Abstract: C30902EH PerkinElmer Avalanche Photodiode APD, laser, range, finder C30902 geiger apd C30902SH PerkinElmer mode a C3092SH-TC PerkinElmer trigger mode
    Text: Introduction PerkinElmer Type C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths. The responsivity of the


    Original     		PDF C30902EH C30921EH C30902SH-DTC PerkinElmer Avalanche Photodiode APD, laser, range, finder C30902 geiger apd C30902SH PerkinElmer mode a C3092SH-TC PerkinElmer trigger mode

    Untitled

    Abstract: No abstract text available
    Text: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.


    Original     		PDF SAE230NS SAE500NS SAE230NX

    SAE500

    Abstract: SAE230NS SAE230NX SAE500NX rangefinding SAE230 SAE500NS
    Text: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.


    Original     		PDF SAE230NS SAE500NS SAE230NX SAE500 SAE230NX SAE500NX rangefinding SAE230

    Untitled

    Abstract: No abstract text available
    Text: Detectors Silicon Avalanche Photodiode SARF-Series Description The SARF-Series is based on a “reach-through“ structure for excellent quantum efficiency and high speed, and has been optimised for 905 nm range finding applications. The device is ideal for low-gain applications with high levels of background light,


    Original     		PDF

    SARF500

    Abstract: No abstract text available
    Text: Silicon Avalanche Photodiode SARF-Series DESCRIPTION The SARF-Series is based on a „reach-through‘‘ structure for excellent quantum efficiency and high speed, and has been optimised for 905 nm range finding applications. The device is ideal for low-gain


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Silicon Avalanche Photodiode SARF-Series DESCRIPTION The SARF-Series is based on a „reach-through‘‘ structure for excellent quantum efficiency and high speed, and has been optimised for 905 nm range finding applications. The device is ideal for low-gain


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Silicon Avalanche Photodiode SARF-Series DESCRIPTION The SARF-Series is based on a “reach-through“ structure for excellent quantum efficiency and high speed, and has been optimised for 905 nm range finding applications. The device is ideal for low-gain


    Original     		PDF