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    AVALANCHE DIODE CROSS REFERENCE Search Results

    AVALANCHE DIODE CROSS REFERENCE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    AVALANCHE DIODE CROSS REFERENCE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TVS diode MELF

    Abstract: MELF Dioden 5kp microsemi tvs diode sma MOTOROLA p6ke schaltungen DIODES CROSS tvs DO-213A BZW04-5V8 BZW06-5V8
    Text: TVS diodes - Überspannungs-Schutzdioden unidirektional – bidirektional Through-hole mount - Bedrahtete Ausführung Typ Type Referencevoltage Bezugsspg. VBR / VWM DO-15 6.3 Ø 0.8 DO-201 Ø3 Stand-off: 5.8 V . 376 V P4KE6.8. P4KE440CA Break down: 6.8 V .


    Original     		PDF DO-15 BZW04-5V8. BZW04-376B 5KP110A DO-201 BZW06-5V8. BZW06-376B 5KE440CA P6KE440CA P4KE440CA TVS diode MELF MELF Dioden 5kp microsemi tvs diode sma MOTOROLA p6ke schaltungen DIODES CROSS tvs DO-213A BZW04-5V8 BZW06-5V8

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN025-100D SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V ID = 47 A


    Original     		PDF PSMN025-100D PSMN025-100D OT428 PSMN025100D OT428

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN063-150D SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 150 V ID = 29 A


    Original     		PDF PSMN063-150D PSMN063-150D OT428 PSMN063150D OT428

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor FEATURES SYMBOL PSMN010-55D QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Logic level compatible VDSS = 55 V


    Original     		PDF PSMN010-55D PSMN010-55D OT428 PSMN01055D OT428

    Schottky diode TO220

    Abstract: schottky diode cross reference DFN1006-2 SCHOTTKY DIODES CROSS REFERENCE DFN1006 Tiny Part Number Cross Reference diode SBR avalanche diode cross reference rectifier diode 2kv SBR1A40SA
    Text: Issue Number | 001 November 09 New Product Announcement Announcing portfolio expansion of SBR products Description Diodes Incorporated has expanded its Super Barrier Rectifier SBR portfolio with the introduction of five new products packaged in DFN1006-2, SMA and


    Original     		PDF DFN1006-2, ITO220S. SBR0240LP, DFN1006-2 PMEG4002EL SBR024OLP-7 PMEG3002AEL SBR02U30LP-7 SBR1A40SA B240A Schottky diode TO220 schottky diode cross reference SCHOTTKY DIODES CROSS REFERENCE DFN1006 Tiny Part Number Cross Reference diode SBR avalanche diode cross reference rectifier diode 2kv SBR1A40SA

    IRF540 smd

    Abstract: IRF540 IRF540 application IRF540 application note Application Note of IRF540 Applications Note of IRF540 IRF540S 43118 TRANSISTOR SMD MARKING CODE 2g IRF540 cross reference
    Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF540, IRF540S SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V ID = 23 A


    Original     		PDF IRF540, IRF540S IRF540 O220AB) IRF540S OT404 OT78127 OT404 IRF540 smd IRF540 application IRF540 application note Application Note of IRF540 Applications Note of IRF540 43118 TRANSISTOR SMD MARKING CODE 2g IRF540 cross reference

    MOSFET TRANSISTOR SMD MARKING CODE nh

    Abstract: catalog mosfet Transistor smd MOSFET TRANSISTOR SMD MARKING CODE A1 mosfet so8 smd sot96-1
    Text: Philips Semiconductors Product specification Dual N-channel enhancement mode TrenchMOSTM transistor FEATURES PHN203 SYMBOL • Dual device • Low threshold voltage • Fast switching • Logic level compatible • Surface mount package QUICK REFERENCE DATA


    Original     		PDF PHN203 PHN203 OT96-1 MOSFET TRANSISTOR SMD MARKING CODE nh catalog mosfet Transistor smd MOSFET TRANSISTOR SMD MARKING CODE A1 mosfet so8 smd sot96-1

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor FEATURES PHP14NQ20T, PHB14NQ20T SYMBOL • ’Trench’ technology • Low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance QUICK REFERENCE DATA


    Original     		PDF PHP14NQ20T, PHB14NQ20T PHP14NQ20T O220AB) PHB14NQ20T OT404 PHP14NQ20T OT404 PHB14NQ20T;

    smd transistor marking A2

    Abstract: TRANSISTOR SMD MARKING CODE 42 transistor smd marking 457 smd transistor 33 05 transistor smd code marking nc g TRANSISTOR SMD MARKING CODE PHP11N06
    Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET FEATURES PHP11N06LT, PHB11N06LT PHD11N06LT SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Logic level compatible


    Original     		PDF PHP11N06LT, PHB11N06LT PHD11N06LT PHP11N06LT O220AB) OT404 PHD11N06LT smd transistor marking A2 TRANSISTOR SMD MARKING CODE 42 transistor smd marking 457 smd transistor 33 05 transistor smd code marking nc g TRANSISTOR SMD MARKING CODE PHP11N06

    TRANSISTOR SMD MARKING CODE 97

    Abstract: SMD TRANSISTOR MARKING 71 transistor smd code marking nc g PHD21N06LT
    Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET FEATURES PHP21N06LT, PHB21N06LT PHD21N06LT SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Logic level compatible


    Original     		PDF PHP21N06LT, PHB21N06LT PHD21N06LT PHP21N06LT O220AB) OT404 PHD21N06LT OT428 TRANSISTOR SMD MARKING CODE 97 SMD TRANSISTOR MARKING 71 transistor smd code marking nc g

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    MOSFETs

    Abstract: N mosfet 100v 500A uis test AO4468 for bipolar junction diode used for MOSFET cross AOT1N60 high voltage mosfet
    Text: dV/dt Ratings for Low Voltage and High Voltage Power MOSFET Fei Wang , Wei Wang, Anup Bhalla 1. Abstract To better understand and utilize AOS power MOSFETs, it is important to understand the design and ratings. Voltage ramp and diode recovery related dV/dt and avalanche breakdown UIS are explained and the inter-relationship


    Original     		PDF

    transistor smd code marking nc

    Abstract: smd transistor marking A2 transistor smd code marking nc g TRANSISTOR SMD MARKING CODE 42
    Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET FEATURES PHP11N06LT, PHB11N06LT PHD11N06LT SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Logic level compatible


    Original     		PDF PHP11N06LT, PHB11N06LT PHD11N06LT PHP11N06LT O220AB) OT404 PHD11N06LT transistor smd code marking nc smd transistor marking A2 transistor smd code marking nc g TRANSISTOR SMD MARKING CODE 42

    fuel injector mosfet

    Abstract: automotive injector fuel injector driver FET switching with IRFP450 schematic injector MOSFET driver INJECTOR POWER MOSFET CIRCUIT AN-1005 fuel injector test solenoid injector
    Text: AN-1005 Rev. 1.0 POWER MOSFET AVALANCHE DESIGN GUIDELINES Application Note Tim McDonald Marco Soldano Anthony Murray Teodor Avram Page 1 of 17 TABLE OF CONTENTS Table of Figures Introduction Overview Avalanche Mode Defined Avalanche Occurrences In Industry Applications


    Original     		PDF AN-1005 fuel injector mosfet automotive injector fuel injector driver FET switching with IRFP450 schematic injector MOSFET driver INJECTOR POWER MOSFET CIRCUIT AN-1005 fuel injector test solenoid injector

    T2 WICKMANN FUSE

    Abstract: t1.403 National Standard for Telecommunications ARRESTOR triac 131-6 raychem stress control tube schematic design for surge protector and electric Federal fuse switch transmission line transformers TVS-SM05 AN34
    Text: AN34 Application Note Secondary Line Protection for T1 and E1 Line Cards Roger Taylor The lower cost of high speed digital T1 and E1 trunk lines has resulted in the increasing deployment of this technology in place of traditional analog lines. In the past, T1/E1 trunks were used


    Original     		PDF UL1459, TR-NWT-001089: UL1459 AN34REV1 T2 WICKMANN FUSE t1.403 National Standard for Telecommunications ARRESTOR triac 131-6 raychem stress control tube schematic design for surge protector and electric Federal fuse switch transmission line transformers TVS-SM05 AN34

    Untitled

    Abstract: No abstract text available
    Text: FQB12N60 / FQI12N60 April 2000 QFET TM FQB12N60 / FQI12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB12N60 FQI12N60

    RC snubber for 3 phase rectifier bridge

    Abstract: "water Flow Sensor" water flow sensor metal rectifier diode metric bolts torque m 32 HSK-E 6000 skv 1/2b 3000/2700 electrolube chopper transformer FOR UPS heat sensor with fan cooling working
    Text: 8. Rectifier Diodes Features Typical Applications Small plastic packaged diodes • Reverse voltages up to 1700 V • All-purpose rectifier diodes • Axial lead diodes taped for automatic insertion • Snubber diodes Threaded stud diodes • Reverse voltages up to 3000 V


    Original     		PDF

    PSMN035-150P

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PSMN035-150B; PSMN035-150P N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES PSMN035-150B; PSMN035-150P SYMBOL QUICK REFERENCE DATA


    Original     		PDF PSMN035-150B; PSMN035-150P PSMN035-150P O220AB)

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-25D N-channel logic level TrenchMOS TM transistor Product specification October 1999 Philips Semiconductors Product specification N-channel logic level TrenchMOS(TM) transistor FEATURES SYMBOL PSMN005-25D QUICK REFERENCE DATA


    Original     		PDF PSMN005-25D PSMN005-25D PSMN00525D OT428

    transistor smd code marking tm

    Abstract: SMD transistor MARKING CODE 213 PSMN130-200D PSMN130
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PSMN130-200D N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES SYMBOL PSMN130-200D QUICK REFERENCE DATA • ’Trench’ technology


    Original     		PDF PSMN130-200D PSMN130-200D OT428 PINNING0200D OT428 transistor smd code marking tm SMD transistor MARKING CODE 213 PSMN130

    SMD Marking 4570

    Abstract: PSMN070-200P PSMN070-200B
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PSMN070-200B; PSMN070-200P N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES PSMN070-200B; PSMN070-200P SYMBOL QUICK REFERENCE DATA


    Original     		PDF PSMN070-200B; PSMN070-200P PSMN070-200P O220AB) SMD Marking 4570 PSMN070-200B

    power switching with IRFP450 schematic

    Abstract: POWER MOSFET CIRCUIT BJT, General electric Linear Application Note FET IRFP450 Avalanche
    Text: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN-1005 Power MOSFET Avalanche Design Guidelines TABLE OF CONTENTS Page Table of Figures. 2


    Original     		PDF AN-1005 06-Dec-11 power switching with IRFP450 schematic POWER MOSFET CIRCUIT BJT, General electric Linear Application Note FET IRFP450 Avalanche

    Untitled

    Abstract: No abstract text available
    Text: FUJI SUMsUMK 1999 SELECTOR GUIDE & CROSS REFERENCE F-l SERIES - Low R d S ON FAP-I SERIES - Low RdS(ON), High Avalanche Ruggedness F-ll SERIES - V gs ± 30V, Reduced Turn-Off Time FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness


    OCR Scan     		PDF 150-200nS)

    irf740 switching 3 phase motor driver

    Abstract: IRF510 SEC mosfet h-bridge power MOSFET IRF740 working of mosfet IRF450 IRF540 complementary transistor IRF740 VDMOS reliability testing report transistor equivalent irf740 IRF640 mosfet snubber circuit for mosfet push pull
    Text: MQSFET RUGGEDNESS Application Note DESIGN RELIABILITY PREFACE PART 1-FAILURE MECHANISMS INTRODUCTION This application note discusses why and how MOSFET devices fail in switch-mode applications. It deals with the issue of ruggedness in the design of the device, and with system design strategies that can


    OCR Scan     		PDF