Untitled
Abstract: No abstract text available
Text: APTM50DHM65T Asymmetrical - Bridge MOSFET Power Module VDSS = 500V RDSon = 65mΩ Ω max @ Tj = 25°C ID = 51A @ Tc = 25°C Application • • • Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives Features • • • • •
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APTM50DHM65T
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ZN3819
Abstract: IN457 equivalent uA748 3N128 equivalent 531 8PIN uA709 FD4725 NE531 diode IN457 3n128
Text: Philips Semiconductors Linear Products Product specification High slew rate operational amplifier NE/SE531 DESCRIPTION PIN CONFIGURATIONS The 531 is a fast slewing high performance operational amplifier which retains DC performance equal to the best general purpose
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NE/SE531
NE531
NE5535
NE531
ZN3819
IN457 equivalent
uA748
3N128 equivalent
531 8PIN
uA709
FD4725
diode IN457
3n128
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UJ-845
Abstract: MOSFET Module transistor d 1556 APTM50DHM65T
Text: APTM50DHM65T Asymmetrical - Bridge MOSFET Power Module VBUS VBUS SENSE Q1 CR3 VDSS = 500V RDSon = 65mW max @ Tj = 25°C ID = 51A @ Tc = 25°C Application • Welding converters · Switched Mode Power Supplies · Switched Reluctance Motor Drives G1 S1 OUT1 OUT2
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APTM50DHM65T
UJ-845
MOSFET Module
transistor d 1556
APTM50DHM65T
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Untitled
Abstract: No abstract text available
Text: APT50M75JLLU2 APT50M75JLLU2 51A 0.075W 500V POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON
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APT50M75JLLU2
E145592
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Untitled
Abstract: No abstract text available
Text: APT50M75JLLU2 51A 0.075Ω 500V R POWER MOS 7 MOSFET K S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT50M75JLLU2
E145592
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tf 115 250v 15a
Abstract: No abstract text available
Text: APT50M75JLLU2 51A 0.075Ω 500V R POWER MOS 7 MOSFET K S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT50M75JLLU2
E145592
tf 115 250v 15a
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Untitled
Abstract: No abstract text available
Text: RCJ510N25 Nch 250V 51A Power MOSFET Datasheet lOutline VDSS 250V RDS on (Max.) 65mW ID 51A PD 40W LPT(S) (SC-83) (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.
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RCJ510N25
SC-83)
R1102A
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Untitled
Abstract: No abstract text available
Text: 5000W Surface Mount Transient Voltage Suppressor 5.0SMCJ12A – 5.0SMCJ170A 5000W Surface Mount Transient Voltage Suppressor Features • • • • Stand-off voltage from 12 to 170 volts Glass passivated junction Low inductance Excellent clamping capability
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0SMCJ12A
0SMCJ170A
DO-214AB
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Untitled
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR PSMCJ SERIES SURFACE MOUNT UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS REVERSE VOLTAGE - 6.8 to 250 Volts POWER DISSIPATION - 1500 WATTS FEATURES Glass passivated chip For surface mounted applications Low leakage Uni and Bidirectional unit
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Untitled
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR PSMCJ SERIES SURFACE MOUNT UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS REVERSE VOLTAGE - 6.8 to 250 Volts POWER DISSIPATION - 1500 WATTS FEATURES Glass passivated chip For surface mounted applications Low leakage Uni and Bidirectional unit
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P4SMA15CA
Abstract: P4SMA250C P4SMA350CA P4SMA130CA
Text: 3SMA Transient Voltage Suppressors Series MERITEK UL E223045 FEATURES For surface mounted applications in order to optimize board space. Low profile package. Built-in strain relief. Glass passivated junction. Low inductance. Excellent clamping capability.
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E223045
SMA/DO-214AC
214AC.
DO--201
MIL-STD-750,
50mVp-p
P4SMA15CA
P4SMA250C
P4SMA350CA
P4SMA130CA
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Untitled
Abstract: No abstract text available
Text: P4SMA SERIES DATA SHEET TRANSIENT VOLTAGE SUPPRESSORS – P4SMA SERIES FEATURE For surface mounted applications in order to optimize board space. Low profile package. Built-in strain relief. Glass passivated junction. Low inductance. Excellent clamping capability.
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SMA/DO-214AC
DO214AC.
MIL-STD-750,
50mVp-p
01-Oct-10
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Untitled
Abstract: No abstract text available
Text: P6SMB SERIES DATA SHEET TRANSIENT VOLTAGE SUPPRESSORS – P6SMB SERIES FEATURE For surface mounted applications in order to optimize board space. Low profile package. Built-in strain relief. Glass passivated junction. Low inductance. Excellent clamping capability.
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SMB/DO-214AA
DO214AA.
MIL-STD-750,
50mVp-p
01-Oct-10
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p6smb15a
Abstract: smb 82a 400C SMB P6SMB400CA P6SMB200A P6SMB15CA 43C 1CA 6V8C
Text: P6SMB Transient Voltage Suppressors Series MERITEK UL E223045 FEATURES For surface mounted applications in order to optimize board space. Low profile package. Built-in strain relief. Glass passivated junction. Low inductance. Excellent clamping capability.
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E223045
SMB/DO-214AA
214AMolded
DO--201
MIL-STD-750,
10/1000sec.
50mVp-p
p6smb15a
smb 82a
400C SMB
P6SMB400CA
P6SMB200A
P6SMB15CA
43C 1CA
6V8C
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Untitled
Abstract: No abstract text available
Text: W jÊ CY7C024AV/025AV/026AV CY7C0241 AV/0251 AV/036AV PRELIMINARY 3.3V 4K/8K/16K x 16/18 Dual-Port Static RAM Features • True dual-ported m em ory cells which allow sim ulta neous access of the same m em ory location • 4/8/16K x 16 organization CY7C024AV/025AV/026AV
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CY7C024AV/025AV/026AV
CY7C0241
AV/0251
AV/036AV
4K/8K/16K
4/8/16K
CY7C024AV/025AV/026AV)
CY7C0241AV/0251AV)
CY7C036AV)
35-micron
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Untitled
Abstract: No abstract text available
Text: - • A.D. *e ft * iS fé Ta -25°C tè # te 5 I A , 5 1B ( 7 - f K Vcc Vcc ± 12— ± 18 V,d ± Vcc « =-j » HYB n x -(V ) $ |t t * 94 ± 40 ± 10 ±100 Vcc — & j£ K ') 77 ¡311 7 7E £ ft- 51A ±50 A Vio ÌA T 51B ± 20 V AV tolA T AL o/A T l O 'C t i ^ t è
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101ra100
Abstract: 22RC10 71RA120 36RA80 101RC60 PR002W 40RCS60 151ra100 250pa120 250RA80
Text: EUROPEAN CATALOGUE CATALOGO EUROPEO EUROPAISCHER KATALOG CATALOGUE EUROPEEN In tro d u c tio n The products specified in this shortform catalogue have been selected from the comprehensive range manufactured by the International Rectifier group of Companies.
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Untitled
Abstract: No abstract text available
Text: 4- Half Bridge MOSFET Module With Gate Driver: Features: Description: • These power modules are suited for high reliability switching applications such as motion control, U PS systems, induction heating, and DC/DC and DC/AC switch mode power supplies. Both the gate drivers and the switching devices
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48v 150A mosfet switch
Abstract: No abstract text available
Text: 8- Three-Phase Full-Bridge MOSFET Module With Gate Driver: Features: Description: •These power modules are suited for high reliability switching applications such as motion control, UPS systems, induction heating, and DC/AC switch mode power supplies. Both the
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7S03bS0
48v 150A mosfet switch
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INDUCTION HEATING POWER SUPPLY
Abstract: No abstract text available
Text: 7- H-Bridge MOSFET Module With Gate Driver: Features: Description: •These power modules are suited for high reliability switching applications such as motion control, UPS systems, induction heating, and DC/DC and DC/AC switch mode power supplies. Both the gate drivers and the switching devices
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7503b50
INDUCTION HEATING POWER SUPPLY
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s3h 02
Abstract: A1t smd sot23 a1z LMV118 avnet LMP2011 LMP2012 LMP2014 LMV771 LMV772
Text: SIS! S&I-SJ & : A m plifiers Made Simple"1 Amplifiers Made Simple ^. <& S. 2 i e | 4r is-®} tH 4 A m plifiers M ade Sim ple^- °1 ^ M A] jSL. ZI&]^. Amplifier Made Sim ple0! -2}-<§^!‘ ig t S .& ^ « 8 a] ^ • 341 SP IC E • • •§'A1®11 n # oj o.^a] ^
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LMH6703
LMH6703-&
OT23-6)
LMH6703Ã
s3h 02
A1t smd
sot23 a1z
LMV118
avnet
LMP2011
LMP2012
LMP2014
LMV771
LMV772
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MC3403L
Abstract: mc3503l MC3303P mc1741 MC3303 Motorola MC3403L MC3303L MC3403P MC3303D MC3403
Text: MC3403 MC3503 MC3303 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Low Power Operational Amplifiers The MC3503 is a low cost, quad operational amplifier with true differential inputs. The device has electrical characteristics similar to the popular MC1741. However, the MC3503 has several distinct advantages over standard
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MC3503
MC1741.
MC1741
MC3403L
mc3503l
MC3303P
mc1741
MC3303
Motorola MC3403L
MC3303L
MC3403P
MC3303D
MC3403
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VEB mikroelektronik
Abstract: E355D D410D mikroelektronik DDR E351D DDR Schaltkreise Transistoren DDR E412D elektronik DDR E345D
Text: ^ o n ij- c B ip o la r e reise Bipolare digitale Schaltkreise Dekoder, Treiber, Timer Inhaltsverzeichnis Seite Typenübersicht 5 Kurzzeichenübersicht 6 Technische Erläuterungen 7 - Zuverlässigkeit 8 - Definitionen 9 - G renz- und Betriebswerte 12 - Einbau- und Lötvorschriften
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D4501X1
VEB mikroelektronik
E355D
D410D
mikroelektronik DDR
E351D
DDR Schaltkreise
Transistoren DDR
E412D
elektronik DDR
E345D
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C34064D-5
Abstract: TP3055EL MC34064 3055el MC34064P5 5151r TP3055E 3055E
Text: M MOTOROLA M C34064 M C33064 Advance Information U ndervoltage Sensing C ircuit UNDERVOLTAGE SENSING CIRCUIT The MC34064 is an undervoltage sensing circuit specifically designed for use as a reset controller in microprocessor-based systems. It offers the
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C34064
C33064
MC34064
O-226AA
3055E
C34064D-5
TP3055EL
3055el
MC34064P5
5151r
TP3055E
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