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    International Rectifier AUIRFI3205

    HEXFET POWER MOSFET Power Field-Effect Transistor, 64A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
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    ComSIT USA AUIRFI3205 500
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    AUIRFI3205 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    AUIRFI3205 International Rectifier FETs - Single, Discrete Semiconductor Products, MOSFET N CH 55V 64A TO-220AB Original PDF

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    IRF3205 application

    Abstract: irf3205 DRIVER Mosfet IRF3205 IRF3205 IR
    Text: AUTOMOTIVE GRADE PD - 97764 AUIRFI3205 Features ● ● ● ● ● ● ● ● ● HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Distance = 4.8mm 175°C Operating Temperature


    Original     		PDF AUIRFI3205 IRF3205 application irf3205 DRIVER Mosfet IRF3205 IRF3205 IR

    IRF3205 application

    Abstract: No abstract text available
    Text: AUTOMOTIVE GRADE PD - 97764 AUIRFI3205 Features ● ● ● ● ● ● ● ● ● HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Distance = 4.8mm 175°C Operating Temperature


    Original     		PDF AUIRFI3205 IRF3205 application