potenciometer
Abstract: konnex KNX PL110 PL132 powerline schematic diagram triak konnex M68HC08 78s10 PL-132
Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. Konnex PL132 Over Power Line Based on the M68HC08 — Demo Application Designer Reference Manual M68HC08 Microcontrollers DRM009/D Rev. 0 2/2003 MOTOROLA.COM/SEMICONDUCTORS For More Information On This Product,
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PL132
M68HC08
M68HC08
DRM009/D
PL132
potenciometer
konnex KNX
PL110
powerline schematic diagram
triak
konnex
78s10
PL-132
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LM7805 smd
Abstract: LM7805 smd transistor marking C14
Text: Preliminary PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, PCS Band, 1930 – 1990 MHz Description The PTF180101M is a 10-watt GOLDMOS FET device intended for EDGE applications in the PCS band. This LDMOS device operates at 50% efficiency
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PTF180101M
PTF180101M
10-watt
PTF180101M*
TSSOP-10
LM7805 smd
LM7805
smd transistor marking C14
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Untitled
Abstract: No abstract text available
Text: BFR183T NPN Silicon RF Transistor Preliminary data 3 For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR183T
VPS05996
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1N5817
Abstract: IN4148 N2102 P01N02LMB TSSOP28 TSSOP-28 23S17
Text: 5V~12V input, 3A/5A output synchronous step-down regulator NIKO-SEM N2102ZA/B GENERAL DESCRIPTION The N2102 is a high efficiency, synchronous rectifier buck converter. Synchronous operation allows for the elimination of heat sinks in many applications. The N2102 is ideal for implementing
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N2102ZA/B
N2102
N2102
Aug-22-2003
TSSOP28
1N5817
IN4148
P01N02LMB
TSSOP28
TSSOP-28
23S17
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bcp55
Abstract: BCP51 BCP53 BCP54 BCP54-10 BCP54-16 BCP55-10 BCP55-16 BCP56 VPS05163
Text: BCP54.BCP56 NPN Silicon AF Transistors For AF driver and output stages 4 High collector current Low collector-emitter saturation voltage Complementary types: BCP51 . BCP53 PNP 3 2 1 Type Marking Pin Configuration BCP54 BCP 54 1=B 2=C 3=E 4=C
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BCP54.
BCP56
BCP51
BCP53
BCP54
OT223
BCP54-10
BCP54-16
bcp55
BCP51
BCP53
BCP54
BCP54-10
BCP54-16
BCP55-10
BCP55-16
BCP56
VPS05163
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BFG194
Abstract: Q62702-F1321 BFG 38
Text: BFG 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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OT-223
BFG194
Q62702-F1321
Aug-22-1996
Q62702-F1321
BFG 38
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sn 7600 n
Abstract: SPX2967 TLE4267 6 VOLT CD IGNITION
Text: SPX2967 Preliminary 400mA Low Dropout Voltage Regulator D E6 Q GND I E2 RO FEATURES • Output voltage tolerance ≤ 2% SPX2967 ■ 400mA current capability 7 Pin TO-263 ■ Low Dropout Voltage 1 2 3 4 5 6 7 ■ Very low standby current consumption ■ Overvoltage protection up to 60V ≤ 400ms
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SPX2967
400mA
O-263
400ms)
TLE4267
O-220-7-X
SPX2967
SPX2967T7
sn 7600 n
6 VOLT CD IGNITION
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MICREL sot-23-5 DATE CODE
Abstract: SIPEX 211 SP6222 SP6223 SP331 sp6222ec5-l-3-0
Text: SP6222/SP6223 50mA and 150mA CMOS Linear Regulators FEATURES Very low Dropout Voltage: 200mV typ 150mA load High Output Setpoint Accuracy of 1% (typ) Very low Input Voltages Down to 1.6V Power-saving Shutdown Mode of 150nA (typ) Fast Turn-on (90 s) and Turn-off (90μs)
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SP6222/SP6223
150mA
200mV
150nA
100VRMS
SP6223
SP6222,
SP6223
MILSTD-883E
MICREL sot-23-5 DATE CODE
SIPEX 211
SP6222
SP331
sp6222ec5-l-3-0
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Untitled
Abstract: No abstract text available
Text: BFR183T NPN Silicon RF Transistor Preliminary data 3 For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR183T
VPS05996
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MO-22
Abstract: 1N4148 MO22
Text: SP6691 Micro Power Boost Regulator Series White LED Driver FEATURES • Drives up to 6 LED's @ 25mA ■ Drives up to 8 LED's @ 20mA ■ High Output Voltage: Up to 34V ■ Optimized for Single Supply, 2.7V - 4.2V Applications ■ Operates Down to 1V ■ High Efficiency: Greater Than 75%
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SP6691
350mV
350mA)
SP6691
SP6691ER/TR
SP6691ER-L/TR
OT-23
Aug22-06
MO-22
1N4148
MO22
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LM7805 M SMD
Abstract: LM7805 smd LM7805 footprint PG-RFP-10 RO4320 smd transistor marking C14 8 LM7805 smd transistor marking L5 LM7805 smd VOLTAGE REGULATOR elna 50v
Text: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small
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PTF180101M
PTF180101M
10-watt
PG-RFP-10
LM7805 M SMD
LM7805 smd
LM7805 footprint
PG-RFP-10
RO4320
smd transistor marking C14 8
LM7805
smd transistor marking L5
LM7805 smd VOLTAGE REGULATOR
elna 50v
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Untitled
Abstract: No abstract text available
Text: BFR360F NPN Silicon RFTransistor Preliminary data Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1.0 dB at 1.8 GHz 2 3 1 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR360F
Aug-22-2001
-j100
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Untitled
Abstract: No abstract text available
Text: A B C D E G F H REVISIONS STANDARD PROFILE SHELL LOW PROFILE SHELL REV DESCRIPTION, ECN, EAR NO. DATE APP'D A PRODUCT DRAWING EAR 14115 AUG27/12 K.L. 1 1 THREADED MOUNTING HOLES ORDERING CODE: M U S B R - A 5 1 1 - X X SERIES, RUGGED USB 2 18.00 .709 REF
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AUG27/12
AUG22/12
E14115
P-MUSBR-A511-XX
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BFR183T
Abstract: SC75
Text: BFR183T NPN Silicon RF Transistor Preliminary data 3 For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR183T
VPS05996
900MHz
Aug-22-2001
BFR183T
SC75
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LM7805 M SMD
Abstract: LM7805 smd C5 MARKING TRANSISTOR lm7805 datasheet future LM7805 smd 8 pin elna 50v transistor smd marking ND LM7805 PTF180101M TPSE106K050R0400
Text: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small
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PTF180101M
PTF180101M
10-watt
LM7805 M SMD
LM7805 smd
C5 MARKING TRANSISTOR
lm7805 datasheet future
LM7805 smd 8 pin
elna 50v
transistor smd marking ND
LM7805
TPSE106K050R0400
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Untitled
Abstract: No abstract text available
Text: 2 . Schematic: 1. Mechanical Dimensions: o3.55 Max o- TT 3. Electrical Specifications: 3.0 CICL: 3.54uH±20% @100KHz 0.25V DC Res.: 0.0226 Ohms Typ p DC Current: 4.22Adc, 30% drop in OCL in od Notes: 1. Selderability; Leads shall meet MIL—STD—202, M e th o d
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100KHz
22Adc,
MIL-ST0-202,
UL94V-0
E151556
102mm)
XFTPRH73â
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