NTE281
Abstract: NTE280 NTE281MCP
Text: NTE280 NPN & NTE281 (PNP) Silicon Complementary Trasistors Audio Power Amplifier Description: The NTE280 (NPN) and NTE281 (PNP) are silicon complementary transistors in a TO3 type package designed for use in high power, high fidelity audio frequency amplifier applications.
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NTE280
NTE281
NTE280MP
NTE280
NTE281MCP
NTE281
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nte181
Abstract: NTE180MCP NEC 08F NTE181MP NTE180 NTE181 power transistor 200w audio power amplifier
Text: NTE180 PNP & NTE181 (NPN) Silicon Power Transistor High Power Audio Amplifier Description: The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case designed for use as output devices in complementary audio amplifiers to 100 watts music power per
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NTE180
NTE181
750mA
NTE181MP
NTE181
NTE180MCP
NEC 08F
NTE180
NTE181 power transistor
200w audio power amplifier
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250w npn
Abstract: NPN 250W NTE60 NTE61 NTE61MCP
Text: NTE60 NPN & NTE61 (PNP) Silicon Complementary Transistors High Power Audio, Disk Head Positioner for Linear Applications Description: The NTE60 (NPN) and NTE61 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications.
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NTE60
NTE61
500mA
500mA,
250w npn
NPN 250W
NTE60
NTE61
NTE61MCP
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insulator nec
Abstract: 2sb772 nec 2SB772 all ic books in transistor 3569
Text: DATA SHEET PNP SILICON POWER TRANSISTOR 2SB772 PNP SILICON POWER TRANSISTOR DESCRIPTION PACKAGE DRAWING Unit: mm The 2SB772 is PNP silicon transistor suited for the output stage of 3 W audio amplifier, voltage regulator, DC-DC converter and relay driver.
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2SB772
2SB772
insulator nec
2sb772 nec
all ic books in
transistor 3569
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2SB772 by Nec
Abstract: 2SB772 Nec 2SB772
Text: DATA SHEET PNP SILICON POWER TRANSISTOR 2SB772 PNP SILICON POWER TRANSISTOR PACKAGE DRAWING Unit: mm DESCRIPTION The 2SB772 is PNP silicon transistor suited for the output stage of 3 W audio amplifier, voltage regulator, DC-DC converter and relay driver.
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2SB772
2SB772
2SB772 by Nec
2SB772 Nec
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NTE388
Abstract: NPN 250W NTE68 NTE68MCP
Text: NTE388 NPN & NTE68 (PNP) Silicon Complementary Transistors General Purpose High Power Audio, Disk Head Positioner for Linear Applications Description: The NTE388 (NPN) and NTE68 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications.
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NTE388
NTE68
NTE388
NPN 250W
NTE68
NTE68MCP
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NTE87
Abstract: NTE88 NTE88MCP NTE88M
Text: NTE87 NPN & NTE88 (PNP) Silicon Complementary Transistors High Power Audio, Disk Head Positioner for Linear Applications Description: The NTE87 (NPN) and NTE88 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications. These
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NTE87
NTE88
NTE87
NTE88
NTE88MCP
NTE88M
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Untitled
Abstract: No abstract text available
Text: MJW3281A NPN MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. Features • Designed for 100 W Audio Frequency
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MJW3281A
MJW1302A
MJW3281A
MJW1302A
MJW3281A/D
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d1117
Abstract: TRANSISTOR 2202 BL 2SA1988 C10535E C10943X MEI-1202 MP-88
Text: DATA SHEET Silicon Power Transistor 2SA1988 PNP SILICON TRANSISTOR POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SA1988 is PNP Silicon Power Transistor that designed for audio frequency power amplifier. 1.0 4 20.5MAX. 5.0 • High Voltage VCEO = −200 V
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2SA1988
2SA1988
MP-88
d1117
TRANSISTOR 2202 BL
C10535E
C10943X
MEI-1202
MP-88
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complementary npn-pnp power transistors
Abstract: MJW1302A MJW1302AG MJW3281A MJW3281AG
Text: MJW3281A NPN MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. Features • Designed for 100 W Audio Frequency
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MJW3281A
MJW1302A
MJW3281A
MJW1302A
O-247
MJW3281A/D
complementary npn-pnp power transistors
MJW1302AG
MJW3281AG
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MJW1302A
Abstract: MJW3281A NPN 200 VOLTS 20 Amps POWER TRANSISTOR
Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency
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MJW3281A
MJW1302A
MJW3281A
MJW1302A
r14525
MJW3281A/D
NPN 200 VOLTS 20 Amps POWER TRANSISTOR
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MJW-1302A
Abstract: NPN 200 VOLTS 20 Amps POWER TRANSISTOR 10000 npn MJW1302A MJW3281A
Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency
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MJW3281A
MJW1302A
MJW3281A
MJW1302A
r14525
MJW3281A/D
MJW-1302A
NPN 200 VOLTS 20 Amps POWER TRANSISTOR
10000 npn
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d1117
Abstract: D111 2SA1988 MP-88
Text: DATA SHEET Silicon Transistor 2SA1988 PNP SILICON TRANSISTOR POWER AMPLIFIER DESCRIPTION The 2SA1988 is PNP Silicon Power Transistor that designed for audio frequency power amplifier. FEATURES • High Voltage VCEO = –200 V • DC Current Gain hFE = 70 to 200
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2SA1988
2SA1988
MP-88
d1117
D111
MP-88
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MJE15034G
Abstract: No abstract text available
Text: MJE15034 NPN , MJE15035 (PNP) Complementary Silicon Plastic Power Transistors TO−220, NPN & PNP Devices http://onsemi.com Complementary silicon plastic power transistors are designed for use as high−frequency drivers in audio amplifiers. 4.0 AMPERES POWER TRANSISTORS
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MJE15034
MJE15035
O-220,
O-220
25plicable
MJE15034/D
MJE15034G
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ADC 808
Abstract: BD808 power transistor audio amplifier 500 watts BD810 BD807 4422 datasheet 890 f 562 ic pdf datasheet mst 720 bd 808 BD 266 S
Text: BD808 BD810 * Plastic High Power Silicon PNP Transistor *ON Semiconductor Preferred Device . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS
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BD808/D
r14525
ADC 808
BD808
power transistor audio amplifier 500 watts
BD810
BD807
4422 datasheet
890 f 562 ic pdf datasheet
mst 720
bd 808
BD 266 S
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NTE284
Abstract: NTE284MP NTE285 NTE284 equivalent audio amplifier 100w transistor npn 100w amplifier pnp matched pair 100w audio amplifier
Text: NTE284 NPN & NTE285 (PNP) Silicon Complementary Transistors Audio Amplifier Output Description: The NTE284 (NPN) and NTE285 (PNP) are silicon complementary power transistors in a TO3 type package designed for use in power amplifier applications. Applications:
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NTE284
NTE285
NTE284MP
NTE284
NTE285MP
NTE285
NTE285MCP
NTE284 equivalent
audio amplifier 100w
transistor npn 100w amplifier
pnp matched pair
100w audio amplifier
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BUS48AP
Abstract: 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD166 Plastic Medium Power Silicon PNP Transistor 1.5 AMPERE POWER TRANSISTOR PNP SILICON 45 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
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BD166
BD165
BD166
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
BUS48AP
2SC1381
mje15033 replacement
2SA698
BD477
BD139.16
2N307
2SC1224
2SD549
BD139.10
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2N5037
Abstract: 2SC1903 2SC2159 mje15033 replacement bd7782 MJE2050 SDT7605 2SA835 BD279 svt6251
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP Transistor *Motorola Preferred Device 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS . . . designed for use in high power audio amplifiers utilizing complementary or quasi
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BD808
BD810*
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N5037
2SC1903
2SC2159
mje15033 replacement
bd7782
MJE2050
SDT7605
2SA835
BD279
svt6251
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NTE2670
Abstract: NTE2671
Text: NTE2670 NPN & NTE2671 (PNP) Silicon Complementary Transistors Silicon Perforated Emitter Technology Audio Power Output Description: The NTE2670 and NTE2671 utilize Perforated Emitter technology specifically designed for high power audio output, disk head positioners and linear applications.
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NTE2670
NTE2671
NTE2670
NTE2671
800mA
100WRMS
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PA001P
Abstract: 200W TRANSISTOR AUDIO AMPLIFIER PA001N 200w silicon audio power transistor 200w audio amplifier ic Magnatec
Text: NEW PRODUCT FOR POWER AUDIO APPLICATION Magnatec’s New Complimentary PA Range of Power Audio Devices Launch for the MILLENNIUM PA001P MECHANICAL DATA Dimensions in mm SILICON PNP POWER TRANSISTOR Complimentary to PA001N FEATURES • AUDIO POWER AMPLIFIER
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PA001P
PA001N
-300V
-240V
150Characteristics
100mS
PA001P
200W TRANSISTOR AUDIO AMPLIFIER
PA001N
200w silicon audio power transistor
200w audio amplifier ic
Magnatec
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NTE241
Abstract: No abstract text available
Text: NTE241 NPN & NTE242 (PNP) Silicon Complementary Transistors Audio Power Amplifier, Switch Description: The NTE241 (NPN) and NTE242 (PNP) are silicon complementary transistors in a TO220 type package designed for use in power amplifier and switching circuits.
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NTE241
NTE242
150mA
100mA,
NTE241
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BD234
Abstract: bd 236 BD - 100 V Bo 235 BD236 BD238 DIN125A JEDECTO126 din 125a BD 238
Text: BD 234 •BD 236 •BD 238 'W Silizium-PNP-Epibasis-Leistungstransistoren Silicon PNP Epibase Power Transistors Anwendungen: Audio-Treiber- und Endstufen Applications: Audio driver and output stages Features: Besondere Merkmale: • Hohe Spitzenleistung • High peak power
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MJE105
Abstract: MJE205 MJE105K MJE205K CASE 90-05
Text: MJE105 SILICON MJE105K MEDIUM-POWER PNP SILICON TRANSISTORS 5 AMPERE POWER TRANSISTORS . . . for use as an output device in complementary audio amplifiers up to 20-Watts music power per channel. PNP SILICON • High DC Current Gain - hFE = 25-100 @ lc = 2.0 A
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MJE105
MJE105K
20-Watts
MJE205,
MJE205K
-MJE105-
MJE105
MJE205
MJE105K
MJE205K
CASE 90-05
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transistor c 3206
Abstract: BD808 transistor BD 139 IC CD 3207 BD807 bd810
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP TVansistor *Motorola Prwtorrtd Devfc« 10 AMPERE POWER TRANSISTORS PNP SILICON 60,80 VOLTS 90 WATTS . . . designed for use ¡n high power audio amplifiers utilizing complementary or quasi
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BD808
BD810*
BD810
BD810
ti3b72S4
transistor c 3206
transistor BD 139
IC CD 3207
BD807
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