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    ATF26884 Price and Stock

    Agilent Technologies Inc ATF-26884-TR1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATF-26884-TR1 13,600
    • 1 $14.7
    • 10 $14.7
    • 100 $14.7
    • 1000 $7.35
    • 10000 $7.35
    		Buy Now

    Agilent Technologies Inc ATF-26884

    RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, KU BAND, GALLIUM ARSENIDE, N-CHANNEL, METAL SEMICONDUCTOR FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATF-26884 231
    • 1 $7.5
    • 10 $7.5
    • 100 $3.25
    • 1000 $3
    • 10000 $3
    		Buy Now
    ATF-26884 1
    • 1 $69.5764
    • 10 $69.5764
    • 100 $69.5764
    • 1000 $69.5764
    • 10000 $69.5764
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    Hewlett Packard Co ATF-26884

    RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, KU BAND, GALLIUM ARSENIDE, N-CHANNEL, METAL SEMICONDUCTOR FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATF-26884 206
    • 1 $7.5
    • 10 $7.5
    • 100 $3.25
    • 1000 $3
    • 10000 $3
    		Buy Now
    ATF-26884 60
    • 1 $7.5
    • 10 $7.5
    • 100 $4.625
    • 1000 $4.625
    • 10000 $4.625
    		Buy Now
    ATF-26884 8
    • 1 $7.5
    • 10 $5.5
    • 100 $5.5
    • 1000 $5.5
    • 10000 $5.5
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    ATF26884 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ATF26884 Agilent Technologies 2-16 GHz General Purpose Gallium Arsenide FET Original PDF
    ATF-26884 Agilent Technologies 2-16 GHz General Purpose Gallium Arsenide FET Original PDF
    ATF-26884-STR Agilent Technologies 2-16 GHz General Purpose Gallium Arsenide FET Original PDF
    ATF-26884-STR Agilent Technologies Over 600 obsolete distributor catalogs now available on the Datasheet Archive - GaAs FET, Gate Width 250, 12 GHz, Pkg: 84 Plastic Scan PDF
    ATF26884-STR Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    ATF-26884-TR1 Agilent Technologies 2-16 GHz General Purpose Gallium Arsenide FET Original PDF
    ATF-26884-TR1 Agilent Technologies 2-16 GHz General Purpose Gallium Arsenide FET Original PDF
    ATF26884-TR1 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    ATF26884 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GHZ micro-X Package

    Abstract: micro-x ATF-10136 atf 26836 ATF-25570 ATF-10236 ATF-25735 ATF-26884 ATF-13736 ATF-10100
    Text: Low Noise MESFETs Typical Specifications @ 25°C Case Temperature Gate Width (mm) Optimum Frequency Range (GHz) Test Frequency (GHz) Vdd NFo Ga P1 dB [1] (V) (dB) (dB) (dBm) ATF-13100 250 2 - 18 12 2.5 1.1 9.5 ATF-13336 250 2 - 16 12 2.5 1.4 ATF-13736 250


    Original     		PDF ATF-13100 ATF-13336 ATF-13736 ATF-13786 ATF-26836 ATF-26884 ATF-10236 ATF-10736 ATF-25170 ATF-25570 GHZ micro-X Package micro-x ATF-10136 atf 26836 ATF-25570 ATF-10236 ATF-25735 ATF-26884 ATF-13736 ATF-10100

    ATF-26884-STR

    Abstract: ATF-26884 ATF-26884-TR1
    Text: 2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26884 Features • High Output Power: 18.0␣ dBm Typical P 1 dB at 12␣ GHz • High Gain: 9.0 dB Typical GSS at 12␣ GHz housed in a cost effective microstrip package. This device is


    Original     		PDF ATF-26884 ATF-26884 ATF-26884-STR ATF-26884-TR1

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    Untitled

    Abstract: No abstract text available
    Text: 2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26884 Features • High Output Power: 18.0 dBm Typical P1 dB at 12 GHz • High Gain: 9.0 dB Typical GSS at 12 GHz housed in a cost effective microstrip package. This device is designed for use in oscillator


    Original     		PDF ATF-26884 ATF-26884 Schottkybarrier-ga-165 5965-8703E

    HSMS-2850-BLK

    Abstract: HSMS-2802-BLK MSA-1105 HSMS-2822-TR1 IAM-81008-STR HSMS-2812BLK IAM-82008 HSMS-2824-BLK HSMS-2805-BLK HSMS-2850
    Text: A g i l e n t Technologies Microwave Diodes, Integrated Circuits, GaAs FETs, Amplifiers and Mixers Diodes continued Please reference artwork on previous page. Surface Mount RF Schottky Barrier Diodes Mfr.Õs Type Bulk Tape and Reel 5082-2800 HSMS-2800-BLK


    Original     		PDF HSMS-2829-BLK HSMS-2800-BLK HSMS-2802-BLK HSMS-2802-TR1 INA-03184-BLK IAM-82008-STR IAM-81008-STR HSMS-2850-BLK MSA-1105 HSMS-2822-TR1 HSMS-2812BLK IAM-82008 HSMS-2824-BLK HSMS-2805-BLK HSMS-2850

    IAM-81008

    Abstract: 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
    Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101


    Original     		PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 IAM-81008 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800

    ATF-26884

    Abstract: zo 103 ma ATF-26884-STR ATF-26884-TR1
    Text: 2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26884 Features • High Output Power: 18.0 dBm Typical P1 dB at 12 GHz • High Gain: 9.0 dB Typical GSS at 12 GHz housed in a cost effective microstrip package. This device is designed for use in oscillator


    Original     		PDF ATF-26884 ATF-26884 5965-8703E 5980-0024E zo 103 ma ATF-26884-STR ATF-26884-TR1

    5082-2830

    Abstract: IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870
    Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101


    Original     		PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 5082-2830 IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870

    GHZ micro-X Package

    Abstract: ATF-36163 Field Effect Transistors ATF-26884 atf 26836 ATF-10100 ATF-10136 ATF-13100 ATF-13336 ATF-13736
    Text: Gallium Arsenide Field Effect Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB and G1 dB are specified at bias points which optimize these parameters. Low Noise PHEMTs Typical Specifications @ 25°C Case Temperature


    Original     		PDF ATF-36077 ATF-36163 OT-363 SC-70) ATF-44101 ATF-45101 ATF-45171 ATF-46101 ATF-46171 GHZ micro-X Package ATF-36163 Field Effect Transistors ATF-26884 atf 26836 ATF-10100 ATF-10136 ATF-13100 ATF-13336 ATF-13736

    GHZ micro-X Package

    Abstract: Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package AT-32032 ATF-13336 ATF-13786 at42010 ATF-10136
    Text: Transistor Selection Guide Silicon Bipolar Transistors NFo and Ga are specified at a low noise bias point, while P 1 dB, G1 dB, and |S 21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature


    Original     		PDF AT-30511 OT-143 OT-23 AT-30533 AT-31011 AT-31033 ATF-45101 ATF-45171 ATF-46101 GHZ micro-X Package Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package AT-32032 ATF-13336 ATF-13786 at42010 ATF-10136

    ATF-35176

    Abstract: ina10386 lnb downconverter schematic diagram ATF-35576 ATF35176 INA-10386 AN-A008 micro-X ceramic Package lna fet ATF13036 LNB down converter for Ku band
    Text: Direct Broadcast Satellite Systems Application Note A009 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. For more current information, see the following publications: • AN1091, 1 and 2 Stage 10.7 to 12.7 GHz Amplifiers Using the


    Original     		PDF AN1091, ATF-36163 5965-1235E. AN1136, 5966-2488E. AN1139, INA-51063 5091-8819E 5968-3629E ATF-35176 ina10386 lnb downconverter schematic diagram ATF-35576 ATF35176 INA-10386 AN-A008 micro-X ceramic Package lna fet ATF13036 LNB down converter for Ku band

    ATF SOT

    Abstract: ATF-26884 ATF-34143 ATF-44101 ATF10236 ATF-21186 ATF-10136
    Text: Gallium Arsenide Field Effect Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB and G1 dB are specified at bias points which optimize these parameters. Low Noise PHEMTs Typical Specifications @ 25°C Case Temperature


    Original     		PDF OT-363 SC-70) OT-343 ATF-36077 ATF-36163 ATF-34143 ATF-13336 ATF-13736 ATF-13786 ATF SOT ATF-26884 ATF-34143 ATF-44101 ATF10236 ATF-21186 ATF-10136

    INA-02186

    Abstract: MSA0485 sot363 marking code ca INA-10386 AT-41485 msa0185 msa0304 msa-1105 AT-41511 MSA-08
    Text: Hewlett-Packard Company Communication Semiconductor Solutions Division 39201 Cherry Street Newark, CA 94560-4967 Customer Change Notice CCN 9808A For Hewlett-Packard Customer Notification Date: August 24, 1998 Parts Affected: All packing options of the following standard part numbers and their respective specials


    Original     		PDF OT-23 HSMS-280X HSMS-285X HSMS-820X HSMP-380X HSMP-383X HSMP-389X HSMP-481X AT-30533 AT-30511 INA-02186 MSA0485 sot363 marking code ca INA-10386 AT-41485 msa0185 msa0304 msa-1105 AT-41511 MSA-08

    HSCH-5337

    Abstract: HSMS-2850 5082-3188 HSMP-3804 ifd 0512 5082-2970 5082-2800 SERIES DATASHEET 5082-2830 AT-41470 HSCH-9301
    Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101


    Original     		PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 HSCH-5337 HSMS-2850 5082-3188 HSMP-3804 ifd 0512 5082-2970 5082-2800 SERIES DATASHEET 5082-2830 AT-41470 HSCH-9301

    Untitled

    Abstract: No abstract text available
    Text: What mLftM HP AECWKLAERTDT 2 -16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26884 F e atu res • High Output Power: 18.0 dBm Typical Px dB at 12 GHz • High Gain: 9.0 dB Typical Gss at 12 GHz • Low Cost Plastic Package • Tape-and-Reel Packaging


    OCR Scan     		PDF ATF-26884 ATF-26884 5965-8703E

    ATF-26884

    Abstract: No abstract text available
    Text: Whn1 H E W L E T T 1HEM PA C K A R D ATF-26884 2-16 GHz General Purpose Gallium Arsenide FET 84 Plastic Package Features • High Im a x : 60 GHz typical • High Output Power: 18.0 dBm typical Pi dB at 12 GHz • High Gain: 9.0 dB typical Gss at 12 GHz •


    OCR Scan     		PDF ATF-26884

    HRMA-0470B

    Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
    Text: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic


    OCR Scan     		PDF E-28230 S-164 CH-8902 HRMA-0470B Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61

    ST Z0 103 MA

    Abstract: No abstract text available
    Text: What HEW LETT* mLliM PACKARD 2-1 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26884 F e atu res • High Output Pow er: 18.0 dBm Typical Pi ¿s at 12 GHz • High Gain: 9.0 dB TypicalGssat 12 GHz • Low C ost P lastic Package • Tape-and-Reel Packaging


    OCR Scan     		PDF ATF-26884 ATF-26884 ST Z0 103 MA

    AVANTEK transistor

    Abstract: No abstract text available
    Text: SOE D A V A N T E K INC Q avantek • 1141=11=1, 0 0 Q b 5 0 5 1 A T F -268 84 2 -1 6 G H z G en eral P u rp o s e G alliu m A rs e n id e F E T T-3 I-25 Features Avantek 84 Plastic Package • High fMAx: 60 GHz typical • High Output Power: 18.0 dBm typical Pi dB


    OCR Scan     		PDF

    ATF-35176

    Abstract: ATF-3507 ATF-35076 ATF-21170 ATF-44100 ATF26550 ATF-13036 ATF-10170 ATF-35576 ATF-35376
    Text: Gallium Arsenide GaAs Field Effect Transistors (FETs) Low Noise GaAs FETs (Typical Specifications at +25°C Case Temperature) Part Number Gate Width Optimum Freq. Range (GHz) Test Freq. (GHz) NF. (dB) (dB) PldB (dBm) 0.5-12 2-18 0.5-6 0.5-10 4 12 4 4 0.5


    OCR Scan     		PDF ATF-10100 ATF-13100 ATF-21100 ATF-25100 ATF-10170 ATF-13170 ATF-21170 ATF-25170 ATF-10136 ATF-10236 ATF-35176 ATF-3507 ATF-35076 ATF-44100 ATF26550 ATF-13036 ATF-35576 ATF-35376