ATF21170 Search Results

ATF21170 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
ATF-21170		Agilent Technologies	0.5-6 GHz Low Noise Gallium Arsenide FET		Original	PDF
ATF-21170		Agilent Technologies	0.5-6 GHz Low Noise Gallium Arsenide FET		Original	PDF
ATF-21170		Avantek	0.5-6 GHz Low Noise Gallium Arsenide FET		Scan	PDF
ATF21170		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF
ATF-21170-STR		Hewlett-Packard	0.5-6GHz low noise gallium arsenide FET		Original	PDF

ATF21170 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
GHZ micro-X Package Abstract: micro-x ATF-10136 atf 26836 ATF-25570 ATF-10236 ATF-25735 ATF-26884 ATF-13736 ATF-10100 Text: Low Noise MESFETs Typical Specifications @ 25°C Case Temperature Gate Width (mm) Optimum Frequency Range (GHz) Test Frequency (GHz) Vdd NFo Ga P1 dB [1] (V) (dB) (dB) (dBm) ATF-13100 250 2 - 18 12 2.5 1.1 9.5 ATF-13336 250 2 - 16 12 2.5 1.4 ATF-13736 250	Original	PDF	ATF-13100 ATF-13336 ATF-13736 ATF-13786 ATF-26836 ATF-26884 ATF-10236 ATF-10736 ATF-25170 ATF-25570 GHZ micro-X Package micro-x ATF-10136 atf 26836 ATF-25570 ATF-10236 ATF-25735 ATF-26884 ATF-13736 ATF-10100
2SC3355 SPICE MODEL Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101 Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness	Original	PDF	F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
ATF-21170 Abstract: 5965-8718E Text: 0.5–6 GHz Low Noise Gallium Arsenide FET Technical Data ATF-21170 Features • Low Noise Figure: 0.9 dB Typical at 4 GHz • High Associated Gain: 13.0 dB Typical at 4 GHz • High Output Power: 23.0 dBm Typical P1 dB at 4 GHz • Hermetic Gold-Ceramic Microstrip Package	Original	PDF	ATF-21170 ATF-21170 5965-8718E 5966-4979E 5965-8718E
Untitled Abstract: No abstract text available Text: 0.5–6 GHz Low Noise Gallium Arsenide FET Technical Data ATF-21170 Features • Low Noise Figure: 0.9 dB Typical at 4 GHz • High Associated Gain: 13.0 dB Typical at 4 GHz • High Output Power: 23.0 dBm Typical P1 dB at 4 GHz • Hermetic Gold-Ceramic Microstrip Package	Original	PDF	ATF-21170 ATF-21170 5965-8718E 5966-4979E
IAM-81008 Abstract: 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800 Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101	Original	PDF	1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 IAM-81008 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
ATF-21170 Abstract: No abstract text available Text: 0.5– 6 GHz Low Noise Gallium Arsenide FET Technical Data ATF-21170 Features • Low Noise Figure: 0.9 dB Typical at 4␣ GHz • High Associated Gain: 13.0␣ dB Typical at 4␣ GHz • High Output Power: 23.0␣ dBm Typical P 1 dB at 4␣ GHz • Hermetic Gold-Ceramic	Original	PDF	ATF-21170 ATF-21170
5082-2830 Abstract: IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870 Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101	Original	PDF	1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 5082-2830 IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870
GHZ micro-X Package Abstract: ATF-36163 Field Effect Transistors ATF-26884 atf 26836 ATF-10100 ATF-10136 ATF-13100 ATF-13336 ATF-13736 Text: Gallium Arsenide Field Effect Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB and G1 dB are specified at bias points which optimize these parameters. Low Noise PHEMTs Typical Specifications @ 25°C Case Temperature	Original	PDF	ATF-36077 ATF-36163 OT-363 SC-70) ATF-44101 ATF-45101 ATF-45171 ATF-46101 ATF-46171 GHZ micro-X Package ATF-36163 Field Effect Transistors ATF-26884 atf 26836 ATF-10100 ATF-10136 ATF-13100 ATF-13336 ATF-13736
GHZ micro-X Package Abstract: Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package AT-32032 ATF-13336 ATF-13786 at42010 ATF-10136 Text: Transistor Selection Guide Silicon Bipolar Transistors NFo and Ga are specified at a low noise bias point, while P 1 dB, G1 dB, and \|S 21E\|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature	Original	PDF	AT-30511 OT-143 OT-23 AT-30533 AT-31011 AT-31033 ATF-45101 ATF-45171 ATF-46101 GHZ micro-X Package Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package AT-32032 ATF-13336 ATF-13786 at42010 ATF-10136
ATF SOT Abstract: ATF-26884 ATF-34143 ATF-44101 ATF10236 ATF-21186 ATF-10136 Text: Gallium Arsenide Field Effect Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB and G1 dB are specified at bias points which optimize these parameters. Low Noise PHEMTs Typical Specifications @ 25°C Case Temperature	Original	PDF	OT-363 SC-70) OT-343 ATF-36077 ATF-36163 ATF-34143 ATF-13336 ATF-13736 ATF-13786 ATF SOT ATF-26884 ATF-34143 ATF-44101 ATF10236 ATF-21186 ATF-10136
HSCH-5337 Abstract: HSMS-2850 5082-3188 HSMP-3804 ifd 0512 5082-2970 5082-2800 SERIES DATASHEET 5082-2830 AT-41470 HSCH-9301 Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101	Original	PDF	1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 HSCH-5337 HSMS-2850 5082-3188 HSMP-3804 ifd 0512 5082-2970 5082-2800 SERIES DATASHEET 5082-2830 AT-41470 HSCH-9301
AT-41486 Abstract: 8060 IAM MSA-1105 VTO-8000 HSMP-3895 HSCH-5337 ATF-46171 HSMS-2804 HSCH-5313 HSMS-2862 Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101	Original	PDF	1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 AT-41486 8060 IAM MSA-1105 VTO-8000 HSMP-3895 HSCH-5337 ATF-46171 HSMS-2804 HSCH-5313 HSMS-2862
Untitled Abstract: No abstract text available Text: WhoI m!!EM ATF-21170 AT-8110 0.5-6 GHz Low Noise Gallium Arsenide FET HEW LETT PACKARD 70 mil Package Features Low Noise Figure: 0.9 dB typical at 4 GHz High Associated Gain: 13.0 dB typical at 4 GHz High Output Power: 23.0 dBm typical Pi dB at 4 GHz Hermetic Gold-Ceramic Microstrip Package	OCR Scan	PDF	ATF-21170 AT-8110) ATF-21170
Untitled Abstract: No abstract text available Text: Wfipl mHHM HEW LETT PACKARD 0.5-6 GHz Low Noise Gallium Arsenide FET Technical Data ATF-21170 Features ho used in a hermetic, high reliability package. This device is designed for use in low noise or medium power amplifier applica tions in the 0.5-6 GHz frequency	OCR Scan	PDF	ATF-21170 ATF-21170 5965-8718E 59664979E

AT-8110 Abstract: avantek Avantek amplifier 167 ATF-21170 AVANTEK transistor AVANTEK source Avantek UA-152 Text: AVANTEK eo e INC d • Q a v a n tek ATF-21170 AT-8110 0.5-6 GHz Low Noise Gallium Arsenide FET " ; " Avantek 70 mil Package Features • • Low Noise Figure: 0.9 dB typical at 4 GHz High Associated Gain: 13.0 d B typical at 4 GHz • High Output Power: 23.0 dBm typical Pi dB	OCR Scan	PDF	ATF-21170 AT-8110) ATF-21170 peripher59 CA95054 310-371-8717cr310 AT-8110 avantek Avantek amplifier 167 AVANTEK transistor AVANTEK source Avantek UA-152
Untitled Abstract: No abstract text available Text: mHHMPACKARD W tia i H E W L E T T 0 .5 - 6 GHz Low Noise Gallium Arsenide FET Technical Data ATF-21170 Features • Low Noise Figure: 0.9 dB Typical at 4 GHz • High A ssociated Gain: 13.0 dB Typical at 4 GHz • High Output Power: 23.0 dBm Typical P LdB at 4 GHz	OCR Scan	PDF	ATF-21170 ATF-21170 5965-8718E
ATF-35176 Abstract: ATF-3507 ATF-35076 ATF-21170 ATF-44100 ATF26550 ATF-13036 ATF-10170 ATF-35576 ATF-35376 Text: Gallium Arsenide GaAs Field Effect Transistors (FETs) Low Noise GaAs FETs (Typical Specifications at +25°C Case Temperature) Part Number Gate Width Optimum Freq. Range (GHz) Test Freq. (GHz) NF. (dB) (dB) PldB (dBm) 0.5-12 2-18 0.5-6 0.5-10 4 12 4 4 0.5	OCR Scan	PDF	ATF-10100 ATF-13100 ATF-21100 ATF-25100 ATF-10170 ATF-13170 ATF-21170 ATF-25170 ATF-10136 ATF-10236 ATF-35176 ATF-3507 ATF-35076 ATF-44100 ATF26550 ATF-13036 ATF-35576 ATF-35376
Untitled Abstract: No abstract text available Text: AVANTEK INC EOE D • 1141 =1bb OQabSt.3 2 ■ ATF-21170 AT-8110 0.5-6 GHz Low Noise Gallium Arsenide FET " ; 'T -3 > \ - x ë Avantek 70 mil Package Features • Low N oise Figure: 0.9 dB typical at 4 GHz • High A ssociated Gain: 13.0 d B typical at 4 GHz	OCR Scan	PDF	ATF-21170 AT-8110)