TL205
Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147
Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's
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PTFC260202FC
PTFC260202FC
10-watt
H-37248-4
TL205
TL2322
RO4350
tl233
tl241
587-1818-2-ND
c201
017 C202
tl147
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Untitled
Abstract: No abstract text available
Text: RFHA1004 25W GaN Wide-Band Power Amplifier 700MHz to 2500MHz The RFHA1004 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, military communication radios and general purpose amplification. Using an
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RFHA1004
700MHz
2500MHz
RFHA1004
DS131018
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Untitled
Abstract: No abstract text available
Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's
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Original
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PDF
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PTFC260202FC
PTFC260202FC
10-watt
H-37248-4
|
Untitled
Abstract: No abstract text available
Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular ampliier applications in the 2300 to 2700 MHz frequency band. Manufactured with Inineon's
|
Original
|
PDF
|
PTFC260202FC
PTFC260202FC
10-watt
H-37248-4
|
Untitled
Abstract: No abstract text available
Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's
|
Original
|
PDF
|
PTFC260202FC
PTFC260202FC
10-watt
H-37248-4
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