Murata grm40
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHVIC915R2 Rev. 6, 5/2005 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage
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MHVIC915R2
MHVIC915R2
Murata grm40
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AN1977
Abstract: AN1987 GRM40 MHVIC915R2 020C Circuit Diagram Panasonic Model DIM 74
Text: Freescale Semiconductor Technical Data MHVIC915R2 Rev. 4, 12/2004 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage
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MHVIC915R2
MHVIC915R2
AN1977
AN1987
GRM40
020C
Circuit Diagram Panasonic Model DIM 74
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GM 950 motorola
Abstract: A113 ECEV1HA100SP GRM40 GRM42 MHVIC915 MHVIC915R2 198MHz
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MHVIC915R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier Freescale Semiconductor, Inc. The MHVIC915R2 wideband integrated circuit is designed for CDMA and
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MHVIC915R2/D
MHVIC915R2
MHVIC915R2
GM 950 motorola
A113
ECEV1HA100SP
GRM40
GRM42
MHVIC915
198MHz
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J673
Abstract: J612 J582 J279
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier The MHVIC915R2 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest high voltage 26 to 28 Volts LDMOS IC technology and integrates a multi–stage structure.
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MHVIC915R2
J673
J612
J582
J279
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GM 950 motorola
Abstract: ATC600S J361 motorola gm 900 grm40 A113 ECEV1HA100SP GRM42 MHVIC915 MHVIC915R2
Text: MOTOROLA Order this document by MHVIC915R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier The MHVIC915R2 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest high voltage 26
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MHVIC915R2/D
MHVIC915R2
MHVIC915R2
GM 950 motorola
ATC600S
J361
motorola gm 900
grm40
A113
ECEV1HA100SP
GRM42
MHVIC915
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHVIC915NR2 Rev. 8, 7/2005 RF LDMOS Wideband Integrated Power Amplifier The MHVIC915NR2 wideband integrated circuit is designed with on -chip matching that makes it usable from 750 to 1000 MHz. This multi - stage
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MHVIC915NR2
IS-95
MHVIC915NR2
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J361 IC
Abstract: No abstract text available
Text: MOTOROLA Order this document by MHVIC915R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier The MHVIC915R2 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest high voltage 26
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MHVIC915R2/D
MHVIC915R2
J361 IC
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J595
Abstract: J673 J361
Text: MOTOROLA Order this document by MHVIC915R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier The MHVIC915R2 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest high voltage 26
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MHVIC915R2/D
MHVIC915R2
J595
J673
J361
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHVIC915NR2 Rev. 9, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHVIC915NR2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage
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MHVIC915NR2
MHVIC915NR2
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J703
Abstract: No abstract text available
Text: Document Number: MHVIC915R2 Rev. 8, 8/2006 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 Final Application • Typical Single - Carrier N - CDMA Performance: VDD = 27 Volts, IDQ1 = 80 mA, IDQ2 = 120 mA, Pout = 34 dBm, Full Frequency Band 746 to
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MHVIC915R2
J703
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MHVIC915 equivalent
Abstract: MHVIC915NR2
Text: Freescale Semiconductor Technical Data Document Number: MHVIC915NR2 Rev. 8, 7/2005 RF LDMOS Wideband Integrated Power Amplifier The MHVIC915NR2 wideband integrated circuit is designed with on -chip matching that makes it usable from 750 to 1000 MHz. This multi - stage
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MHVIC915NR2
IS-95
MHVIC915NR2
MHVIC915 equivalent
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MHVIC915R2 Rev. 5, 1/2005 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on−chip matching that makes it usable from 750 to 1000 MHz. This multi−stage
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MHVIC915R2
IS-95
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J40-5
Abstract: FET J134 A113 A114 A115 AN1955 AN1977 AN1987 C101 JESD22
Text: Freescale Semiconductor Technical Data Document Number: MHVIC915NR2 Rev. 9, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHVIC915NR2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage
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MHVIC915NR2
MHVIC915NR2
J40-5
FET J134
A113
A114
A115
AN1955
AN1977
AN1987
C101
JESD22
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHVIC915R2 Rev. 7, 7/2005 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on -chip matching that makes it usable from 750 to 1000 MHz. This multi - stage
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IS-95
MHVIC915R2
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J673
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 5, 1/2005 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage structure is rated for 26 to 28 Volt operation and covers all typical cellular base
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MHVIC915R2
J673
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marking J6 transistors
Abstract: J702 GM 950 motorola grm40 KOA RM73B2AT102J DATASHEET marking Z4 Marking Z7 Gate Driver A113 A114 A115
Text: Freescale Semiconductor Technical Data Document Number: MHVIC915R2 Rev. 8, 8/2006 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 Final Application • Typical Single - Carrier N - CDMA Performance: VDD = 27 Volts, IDQ1 = 80 mA, IDQ2 = 120 mA, Pout = 34 dBm, Full Frequency Band 746 to
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MHVIC915R2
marking J6 transistors
J702
GM 950 motorola
grm40
KOA RM73B2AT102J DATASHEET
marking Z4
Marking Z7 Gate Driver
A113
A114
A115
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smd diode J476
Abstract: VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3
Text: Device Data Library WIRELESS RF PRODUCT DEVICE DATA DL110/D Rev. 14 2/2003 wireless Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii
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DL110/D
smd diode J476
VIPER L2A RoHS
Viper L2A
mmic amplifier marking code N10
mosfet j279
MRF 966 Mesfet
PIN diode MACOM SPICE model
NCR 2400 SMA DATASHEET Datasheet
MRF 899
smd wb3
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A113
Abstract: ECEV1HA100SP GRM40 GRM42 MHVIC915 MHVIC915R2
Text: MOTOROLA Order this document by MHVIC915R2/D SEMICONDUCTOR TECHNICAL DATA The RF Line 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier The MHVIC915R2 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest high voltage 26
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MHVIC915R2/D
MHVIC915R2
MHVIC915R2
A113
ECEV1HA100SP
GRM40
GRM42
MHVIC915
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