TRANSISTOR tl131
Abstract: tl239
Text: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include
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PTFB082817FH
PTFB082817FH
H-34288-4/2
TRANSISTOR tl131
tl239
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J103 transistor
Abstract: transistor c223
Text: PTFB072707FH Thermally-Enhanced High Power RF LDMOS FET 270 W, 28 V, 728 – 768 MHz Description The PTFB072707FH is a LDMOS FET intended for use in multistandard cellular power amplifier applications. Features include input and output matching, high gain and thermally-enhanced
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PTFB072707FH
PTFB072707FH
b072707fh-gr1
J103 transistor
transistor c223
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Untitled
Abstract: No abstract text available
Text: LET9150 RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 150 W with 20 dB gain @ 860 MHz ■ BeO-free package Description
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LET9150
LET9150
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Untitled
Abstract: No abstract text available
Text: PTFA091203EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091203EL is a 120-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.
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PTFA091203EL
PTFA091203EL
120-watt,
H-33288-6
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TRANSISTOR tl131
Abstract: C805 capacitor C207 capacitor ATC200B103MW LM78L05ACM-ND TL131 LM78L05ACMND TL228 capacitor 471 c103 TRANSISTOR
Text: PTFA091203EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091203EL is a 120-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band.
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PTFA091203EL
PTFA091203EL
120-watt,
H-33288-4/2
TRANSISTOR tl131
C805 capacitor
C207 capacitor
ATC200B103MW
LM78L05ACM-ND
TL131
LM78L05ACMND
TL228
capacitor 471
c103 TRANSISTOR
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PTFB092707FH
Abstract: No abstract text available
Text: PTFB092707FH Thermally-Enhanced High Power RF LDMOS FET 270 W, 28 V, 925 – 960 MHz Description The PTFB092707FH is a 270-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.
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PTFB092707FH
PTFB092707FH
270-watt
H-37288L-4/2
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tl136
Abstract: TRANSISTOR tl131 LM78L05ACM-ND LM78L05ACMND TL127 3882 PTFA091203EL
Text: PTFA091203EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091203EL is a 120-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band.
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PTFA091203EL
PTFA091203EL
120-watt,
H-33288-6
tl136
TRANSISTOR tl131
LM78L05ACM-ND
LM78L05ACMND
TL127
3882
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LM78L05ACM-ND
Abstract: LM78L05ACMND C210 TL122
Text: PTFA091203EL Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091203EL is a 120-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band. This device features internal I/O matching and thermally-enhanced
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PTFA091203EL
PTFA091203EL
120-watt,
H-33288-6
LM78L05ACM-ND
LM78L05ACMND
C210
TL122
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transistor c237
Abstract: capacitor 471 c221 capacitor TRANSISTOR c104 C103 c104 c804 TL227 c221 TRANSISTOR C11256 B0828
Text: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power amplifier applications. Features include
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PTFB082817FH
PTFB082817FH
H-34288-4/2
transistor c237
capacitor 471
c221 capacitor
TRANSISTOR c104
C103 c104
c804
TL227
c221 TRANSISTOR
C11256
B0828
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