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ATC100A120JW150X Price and Stock

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American Technical Ceramics Corp ATC100A120JW150X CAPACITOR, CERAMIC, MULTILAYER, 150 V, 0.000012 UF, SURFACE MOUNT, 0505
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	ATC100A120JW150X		4			1 $1.875 10 $1.725 100 $1.725 1000 $1.725 10000 $1.725	Buy Now
Kyocera AVX Components 100A120JW150XT Silicon RF Capacitors / Thin Film 150volts 12pF 5%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	100A120JW150XT	Reel	1,000		500	1 - 10 - 100 - 1000 $1.19 10000 $1.02	Buy Now

ATC100A120JW150X Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
c102 TRANSISTOR Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113 Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PDF	PTFA220121M PTFA220121M 12-watt PG-SON-10 c102 TRANSISTOR NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
TL225 Abstract: ATC100A6R2CW150X Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PDF	PTFA220121M PTFA220121M 12-watt PG-SON-10 TL225 ATC100A6R2CW150X
Untitled Abstract: No abstract text available Text: PTFC262157SH Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz Description The PTFC262157SH LDMOS FET is designed for use in Doherty cellular power applications in the 2620 MHz to 2690 MHz frequency band. Input and output matching have been optimized for maximum	Original	PDF	PTFC262157SH PTFC262157SH H-34288G-4/2 c262157sh-gr1
Untitled Abstract: No abstract text available Text: PTFC262157FH Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz Description The PTFC262157FH LDMOS FET is designed for use in Doherty cellular power applications in the 2620 MHz to 2690 MHz frequency band. Input and output matching have been optimized for maximum	Original	PDF	PTFC262157FH PTFC262157FH H-34288G-4/2 c262157sh-gr1 48stances.
TRANSISTOR C802 Abstract: PTFA220121M LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PDF	PTFA220121M PTFA220121M 12-watt PG-SON-10 TRANSISTOR C802 LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw
C801 Abstract: 1/db3 c801 Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power ampliier applications in the 700 to 2200 MHz. This LDMOS	Original	PDF	PTFA220121M PTFA220121M 12-watt PG-SON-10 C801 1/db3 c801
TRANSISTOR C802 Abstract: TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104 Text: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PDF	PTFA220121M PTFA220121M 12-watt PG-SON-10 TRANSISTOR C802 TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104