AC100
Abstract: T2526 atmel 350 so8 atmel 336
Text: Features • • • • • • • No external components except PIN diode Supply-voltage range: 2.7 V to 5.5 V Automatic sensitivity adaptation AGC Automatic strong signal adaptation (ATC) Automatic supply voltage adaptation Enhanced immunity against ambient light disturbances
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T2526
T2526
13-Nov-01
AC100
atmel 350 so8
atmel 336
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atmel 350 so8
Abstract: Park transformation AC100 T2526 Atmel 652
Text: Features • • • • • • • No External Components Except PIN Diode Supply-voltage Range: 2.7 V to 5.5 V Automatic Sensitivity Adaptation AGC Automatic Strong Signal Adaptation (ATC) Automatic Supply Voltage Adaptation Enhanced Immunity against Ambient Light Disturbances
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T2526
atmel 350 so8
Park transformation
AC100
Atmel 652
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Untitled
Abstract: No abstract text available
Text: Features • No External Components Except PIN Diode • Supply-voltage Range: 4.5V to 5.5V • High Sensitivity Due to Automatic Sensitivity Adaption AGC and Automatic Strong Signal Adaption (ATC) • High Immunity Against Disturbances from Daylight and Lamps
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ATA2525
ATA2525
4854Gâ
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amplifier 40khz with gain 100 with 5v
Abstract: 9226B AC100 ir receiver 38Khz and 56Khz
Text: Features • Highly Integrated Device with No External Components Except PIN Diode • Supply-voltage Range: 2.7V to 5.5V • High Sensitivity Due to Automatic Sensitivity Adaption AGC and Automatic Strong • • • • • Signal Adaption (ATC) Automatic Supply Voltage Adaptation
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36kHz
40kHz
ATA2536T
ATA2536T
amplifier 40khz with gain 100 with 5v
9226B
AC100
ir receiver 38Khz and 56Khz
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Untitled
Abstract: No abstract text available
Text: Features • Highly Integrated Device with No External Components Except PIN Diode • Supply-voltage Range: 2.7V to 5.5V • High Sensitivity Due to Automatic Sensitivity Adaption AGC and Automatic Strong • • • • • Signal Adaption (ATC) Automatic Supply Voltage Adaptation
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36kHz
40kHz
ATA2536T
ATA2536T
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Untitled
Abstract: No abstract text available
Text: Features • No External Components Except PIN Diode • Supply-voltage Range: 2.7V to 5.5V • High Sensitivity Due to Automatic Sensitivity Adaption AGC and Automatic Strong Signal Adaption (ATC) Automatic Supply Voltage Adaptation High Immunity against Disturbances from Daylight and Lamps
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ATA2526
ATA2526
4905Fâ
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Untitled
Abstract: No abstract text available
Text: T2526 Low-voltage IR Receiver ASSP DATASHEET Features ● No external components except PIN diode ● Supply-voltage range: 2.7V to 5.5V ● Highest sensitivity due to automatic sensitivity adaption AGC and automatic strong signal adaption (ATC) ● Automatic supply voltage adaptation
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T2526
30kHz
56kHz;
4597J-AUTO-04/14
T2526
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Untitled
Abstract: No abstract text available
Text: Features • Highly Integrated Device with No External Components Except PIN Diode • Supply-voltage Range: 2.7V to 5.5V • High Sensitivity Due to Automatic Sensitivity Adaption AGC and Automatic Strong • • • • • Signal Adaption (ATC) Automatic Supply Voltage Adaptation
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36kHz
40kHz
ATA2536T
ATA2536T
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Untitled
Abstract: No abstract text available
Text: ATA2526 Low-voltage IR Receiver ASSP DATASHEET Features ● No external components except PIN diode ● Supply-voltage range: 2.7V to 5.5V ● High sensitivity due to automatic sensitivity adaption AGC and automatic strong signal adaption (ATC) ● Automatic supply voltage adaptation
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ATA2526
33kHz
40kHz
56kHz;
4905G-AUTO-04/14
ATA2526
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atmel 224
Abstract: No abstract text available
Text: ATA2525 IR Receiver ASSP DATASHEET Features ● No external components except PIN diode ● Supply-voltage range: 4.5V to 5.5V ● High sensitivity due to automatic sensitivity adaption AGC and automatic strong signal adaption (ATC) ● High immunity against disturbances from daylight and lamps
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ATA2525
33kHz
40kHz;
4854H-AUTO-03/14
ATA2525
atmel 224
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Untitled
Abstract: No abstract text available
Text: T2525 IR Receiver ASSP DATASHEET Features ● No external components except PIN diode ● Supply-voltage range: 4.5V to 5.5V ● Highest sensitivity due to automatic sensitivity adaption AGC and automatic strong signal adaption (ATC) ● Highest immunity against disturbances from daylight and lamps
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T2525
30kHz
56kHz;
4657I-AUTO-04/14
T2525
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AC100
Abstract: T2525 T2525N038 T2525N238 T2525N638
Text: Features • • • • • • No external components except PIN diode Supply-voltage range: 4.5 V to 5.5 V Automatic sensitivity adaptation AGC Automatic strong signal adaptation (ATC) Enhanced immunity against ambient light disturbances Available for carrier frequencies between 30 kHz to 76 kHz; adjusted by Zener diode
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T2525
T2525
17-Oct-01
AC100
T2525N038
T2525N238
T2525N638
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atmel 904
Abstract: No abstract text available
Text: Features • • • • • • No External Components Except PIN Diode Supply-voltage Range: 4.5 V to 5.5 V Automatic Sensitivity Adaptation AGC Automatic Strong Signal Adaptation (ATC) Enhanced Immunity Against Ambient Light Disturbances Available for Carrier Frequencies between 30 kHz to 76 kHz; Adjusted by Zener Diode
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T2525
T2525
4657B
atmel 904
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atmel 904
Abstract: Park transformation AC100 T2525
Text: Features • • • • • • No External Components Except PIN Diode Supply-voltage Range: 4.5 V to 5.5 V Automatic Sensitivity Adaptation AGC Automatic Strong Signal Adaptation (ATC) Enhanced Immunity Against Ambient Light Disturbances Available for Carrier Frequencies between 30 kHz to 76 kHz; Adjusted by Zener Diode
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T2525
T2525
atmel 904
Park transformation
AC100
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TB223
Abstract: amidon BN-61-202
Text: June 22, 2012 TB223 Frequency=20-35MHz Pout=30W Gain=17dB Vds=24Vdc Idq=0.4A Efficiency=30 to 58% L2701 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com June 22, 2012 TB223 Pout/Gain vs Pin: Freq=20 MHz, Vds=24Vdc, Idq=0.4A
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TB223
20-35MHz
24Vdc
L2701
TB223
24Vdc,
17-turn,
850mu
amidon BN-61-202
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electrolytic capacitor 470uF 63V
Abstract: electrolytic capacitor, .1uF electrolytic capacitor 470uf L494 chip capacitor c06
Text: 0912LD20 20 Watts, 28 Volts Pulsed Avionics 960 to 1215 MHz LDMOS FET CASE OUTLINE 55QT Common Source GENERAL DESCRIPTION The 0912LD20 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 20Wpk of RF power from 960 to 1215 MHz.
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0912LD20
0912LD20
20Wpk
electrolytic capacitor 470uF 63V
electrolytic capacitor, .1uF
electrolytic capacitor 470uf
L494
chip capacitor c06
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167D
Abstract: TB167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener
Text: July 13, 2012 TB167D#7 Frequency=30-512MHz Pout=100W Gain=30dB Vds=28Vdc Idq=0.4+0.8A Efficiency=38 to 50% LQ801>LB501A PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com July 13, 2012 40 100 35 80 30 60 25 40 20 20 100
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TB167D
30-512MHz
28Vdc
LQ801
LB501A
28Vdc,
0R0J12AFX
167D
ph c24 zener diode
amidon BN-61-202
ph c20 zener diode
ph c13 zener diode
ph c24 zener
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960-1215 MHz transistor 20W
Abstract: CAPACITOR 33PF electrolytic capacitor, .1uF 470uf, 35v electrolytic capacitor capacitor 470uf/63v 0912LD20 ADG419 capacitor 226 20V 47pf 55QT
Text: 0912LD20 20 Watts, 28 Volts Pulsed Avionics 960 to 1215 MHz LDMOS FET CASE OUTLINE 55QT Common Source GENERAL DESCRIPTION The 0912LD20 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 20Wpk of RF power from 960 to 1215 MHz.
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0912LD20
0912LD20
20Wpk
960-1215 MHz transistor 20W
CAPACITOR 33PF
electrolytic capacitor, .1uF
470uf, 35v electrolytic capacitor
capacitor 470uf/63v
ADG419
capacitor 226 20V
47pf
55QT
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9435a
Abstract: GE C35 4C35 6.8 2w c33a
Text: ATC ! ! !"#$% & &' ) ' * . 3 ))
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diode zener 7.2v
Abstract: rf power amplifier circuit by 400-470mhz 3214W-1-103E DB-54008L-470 EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54008L H3460
Text: DB-54008L-470 RF POWER amplifier using 1 x PD54008L N-channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 400 - 470MHz ■ Supply voltage: 7.2V ■ Output power: 8W ■ Power gain: 12.2 ± 1.6dB ■ Efficiency: 51% - 76%
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DB-54008L-470
PD54008L
470MHz
DB-54008L-470
diode zener 7.2v
rf power amplifier circuit by 400-470mhz
3214W-1-103E
EEVHB1V100P
EXCELDRC35C
GRM42-6C0G102J50
PD54008L
H3460
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165nH
Abstract: No abstract text available
Text: DB-54008L-470 RF POWER amplifier using 1 x PD54008L N-channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 400 - 470MHz ■ Supply voltage: 7.2V ■ Output power: 8W ■ Power gain: 12.2 ± 1.6dB ■ Efficiency: 51% - 76%
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DB-54008L-470
PD54008L
470MHz
DB-54008L-470
165nH
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DB-57060-526
Abstract: transistor 526 zener 20w A02TJ B10TJ EXCELDRC35C GRM426C0G102J50 GRM426C0G151J50 GRM426X7R104K50 PD57060
Text: DB-57060-526 RF power amplifier using 1 x PD57060 N-channel enhancement-mode lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 486 - 526MHz ■ Supply voltage: 26V ■ Output power: 20W ■ Operation: class AB ■ IMD3 2 tones test : < -36 dBc @ 20W avg
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DB-57060-526
PD57060
526MHz
2002/95/EC
DB-57060-526
transistor 526
zener 20w
A02TJ
B10TJ
EXCELDRC35C
GRM426C0G102J50
GRM426C0G151J50
GRM426X7R104K50
PD57060
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Untitled
Abstract: No abstract text available
Text: 3 ud d Ha pw-^rl^yl Aixpli—«l * • wt4 a tMTrwM — A park kw MM#Mtwn «r «d« ky « ! » n a *r b a n AnpFanwl ■ b Y in atC fi In M i d i d a r t . ^ ^ 0.530 REF. D 04-40x5/8 SCREW * C H> SPECIFICATIONS: B 1) INSULATION DISPLACEMENT CONTACTS: TO ACCOMMODATE 3 4 -3 6 AWG
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04-40x5/8
M/15/W
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trimmer 20pF
Abstract: SD1485 push pull class AB RF linear L band sgs-thomson RF TRANSISTORS transistor 7g SGS-THOMSON RF POWER transistor zc
Text: S G S -T H O M S O N SD1485 !IL[ $ 7 . RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS 170 - 230 MHz 32 VOLTS COMMON EMITTER GOLD METALLIZATION CLASS AB PUSH PULL INTERNAL INPUT MATCHING HIGH SATURATED POWER CAPABILITY DESIGNED FOR HIGH POWER LINEAR OPERATION
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SD1485
SD1485
7053ti
trimmer 20pF
push pull class AB RF linear L band
sgs-thomson RF TRANSISTORS
transistor 7g
SGS-THOMSON RF POWER
transistor zc
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