10 ghz transistor

Abstract: AT41435-3 AT-41435 Silicon Bipolar Transistor TRANSISTOR 12 GHZ
Contextual Info: AT41435-3 NPN SILICON BIPOLAR TRANSISTOR DESCRIPTION: PACKAGE STYLE .100 4L PILL The ASI AT41435-3 Is a low noise, high gain, silicon bipolar transistor for applications up to 6.0 GHz. MAXIMUM RATINGS IC 60 mA VCEO 12 V VCBO 20 V VEBO 1.5 V PDISS 500 mW @ TC = 25°C

UHF transistor GHz

Abstract: amplifier TRANSISTOR 12 GHZ 10 ghz transistor AT41470 S21E
Contextual Info: AT41470 NPN SILICON BIPOLAR TRANSISTOR DESCRIPTION: The ASI AT41470 is a Common Emitter Device Designed for low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. PACKAGE STYLE MAXIMUM RATINGS IC 60 mA

Contextual Info: AT41486 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V) I(C) Max. (A)60m Absolute Max. Power Diss. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

NE56755

Abstract: BFR96S HXTR4105 LT3203 HXTR3615 NE21960 j200 Avantek S MA42141 2sc240s
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W Gp V(BR)CBO (V) Po N.F. at. MatI. Toper Max °C (W) Package Style UHFIMicrowave Transistors, Bipolar NPN (Co nt' d) 5 10 15 20 25 30 35 40 45 50 BFQ73S BFR96 AT41435-5 AT420S5 AT414S5

BF907

Abstract: BF900 BF910 BF914 BF479S Siemens BF479T NE56755 BF540 BFQ14
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W Gp V(BR)CBO (V) Po N.F. at. MatI. Toper Max °C (W) Package Style UHFIMicrowave Transistors, Bipolar NPN (Co nt' d) 5 10 15 20 25 30 35 40 45 50 BFQ73S BFR96 AT41435-5 AT420S5 AT414S5

AT425

Abstract: AT6CLC telephone handset cords AT414 cords AT1007-NK 3522 AT307 AT314 AT325
Contextual Info: CORDS FULL MODULAR LINE CORDS AT407 7 Ft. AT414 (14 Ft.) AT425 (25 Ft.) 1/4 MODULAR LINE CORDS AT307 (7 Ft.) AT314 (14 Ft.) AT325 (25 Ft.) 4-conductor, flat, satin silver line cords. 4-conductor, flat, satin silver line cords FULL MODULAR LINE CORDS AT607 (7 Ft.)

AT-41410

Abstract: 41410 bipolar transistor 6 GHz UHF transistor GHz AT41410 NF50 S21E
Contextual Info: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41410 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High Associated Gain: 14.0 dB Typical at 2.0 GHz 10.0 dB Typical at 4.0 GHz • High Gain-Bandwidth

IEC60529

Contextual Info: Environmentally Sealed Pushbuttons Series WB Distinctive Characteristics Single unit construction of the bushing and case gives added protection from environmental elements. Specially designed contact mechanism for breaking light welds. Minimal contact bounce is achieved with specially

TACTILE SWITCH SPST FLAT BUTTON

Abstract: JB Series TACTILE SWITCH SPST FLAT IEC60529 JB15FP lm 386
Contextual Info: Series JB Low Profile Process Sealed Tactiles Distinctive Characteristics Special bracket for right angle mounting provides added design variations. Higher operating force type provides more pronounced operating feel. Rubber seal construction prevents contact contamination

AT4156

Abstract: switch M2044 M2012 6A 125V M2019 HK-2 M2044 M2012 M2032 M2013 M2015
Contextual Info: Miniature Rockers Series M Distinctive Characteristics Three methods of panel mounting: flat frame for flush with face or subpanel, snap-in, and PCB. High insulating barriers increase isolation of circuits in multipole devices and provide added protection to contact points.

SOT-143 MARKING 550

Abstract: 3 to 10 GHz mixer AT-41411 41411 AT-41411-BLK AT-41411-TR1 S21E avago marking -2 sot-143
Contextual Info: AT-41411 Surface Mount Low Noise Silicon Bipolar Transistor Chip Data Sheet Description Features Avago’s AT-41411 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41411 is housed in a low cost low parasitic 4 lead SOT-143 surface mount package. The

AT-41486

Abstract: AT-41486-BLK AT-41486-TR1 NF50 S21E Silicon Bipolar Transistor Hewlett-Packard
Contextual Info: Up to 6 GHz Low Noise Silicon␣ Bipolar Transistor Technical Data AT-41486 • Low Noise Figure: 1.4 dB Typical at 1.0␣ GHz 1.7 dB Typical at 2.0␣ GHz • High Associated Gain: 18.0 dB Typical at 1.0␣ GHz 13.0 dB Typical at 2.0␣ GHz • High Gain-Bandwidth

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

AT3080

Contextual Info: Toggles Accessories & Hardware Rockers Contents Pushbuttons Part Number Page Programmable Illuminated PB

avantek

Abstract: Avantek amplifier AT-41410 T-31-21 Avantek, Inc ic and 4081 AVANTEK oscillator
Contextual Info: AVANTEK Q INC imntt ooobMb3 i 2GE D avantek AT-41410 Up to 6 GHz Low Noise Silicon Bipolar Transistor Z .\ Features • • • • Avantek 100 mil Package Low Noise Figure: 1.6 dB typical at 2.0 GHz 3.0 dB typical at 4.0 GHz High Associated Galn:14.0 dB typical at 2.0 GHz

AT4041

Abstract: nkk TL 22 AT050 AT3004 AT607 S 04 at615 JD 803 AT057 SB40 AT070
Contextual Info: Accessories & Hardware Color Codes A Black B White C Red D Amber E Yellow F Green G Blue H Gray J Clear Hardware Threading Materials & Finishes Many hardware pieces are available in both metric and inch threading, and in such cases M metric and H (inch) are noted in the descriptions.

AT-41435G

Abstract: at41435 AT41435G transistor 2499
Contextual Info: Agilent AT-41435 Up to 6 GHz Low Noise Silicon Bipolar Transistor Data Sheet Features • Low Noise Figure: 1.7 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz Description Agilent’s AT-41435 is a general purpose NPN bipolar transistor that offers excellent high

AT-41435

Abstract: transistor K D 2499 transistor 45 f 122 S21E T-31-21 Avantek AT41435 AVANTEK transistor
Contextual Info: AVANTEK I NC 0 A V A N SGE D T E H i m DDOmbT T AT-41435 Up to 6 GHz Low Noise Silicon Bipolar Transistor K ~S >\ - Z . I Features • • • • Avantek 35 micro-X Package • Low Noise Figure: 1.7 dB typical at 2.0 GHz 3.0 dB typical at 4.0 GHz High Associated Gain: 14.0 dB typical at 2.0 GHz

AN-S002

Abstract: AN-S013 5091 AN-S001 MGA-64135 GaAS MMIC Assembly and Handling Guidelines MSA1104 msa-0520 POWER AMPLIFIERS CIRCUIT DIAGRAMS TRANSIMPEDANCE mmic
Contextual Info: Applications The application notes represented by these abstracts are available from your local Hewlett-Packard sales office or nearest HewlettPackard authorized distributor or representative. Technical information is also available on the WWW at: www.hp.com/go/rf

Bipolar Junction Transistor

Abstract: 414 rf transistor AT-420
Contextual Info: RF and Microwave Silicon Bipolar␣ Transistors Characteristics The silicon bipolar transistor is a semiconductor device, with amplification due to current gain. The advantages silicon bipolar transistors have over other transistor types include mature technology both in the understanding of the device physics and

M2T19

Abstract: welding schematics M2T13
Contextual Info: Process Sealed Miniature Rockers Series M2 Distinctive Characteristics Antijamming design protects against mechanism damage from downward force on the actuator. O-ring surrounding top of lever prevents liquids from reaching switch mechanism. Ultrasonic welding of upper and lower housing

AT-41486-TR1G

Contextual Info: AT-41486 Up to 6 GHz Low Noise Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-41486 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41486 is housed in a low cost surface mount .085" diameter plastic package. The 4 micron emitter-toemitter pitch enables this transistor to be used in many

AVANTEK YIG tuned oscillator

Abstract: avantek YTO Avantek yig yig oscillator hp AVANTEK, yig yig tuned oscillator avantek yig oscillator avantek vto yig oscillator avantek yto oscillator
Contextual Info: Microwave Oscillator Design Application Note A008 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. For more current information, see the following publications: • AN1091, 1 and 2 Stage 10.7 to 12.7 GHz Amplifiers Using the

AT605

Contextual Info: RF and M icrowave S ilicon Bipolar Transistors The silicon bipolar transistor is a semiconductor device, with amplification due to current gain. The advantages silicon bipolar transistors have over other transistor types include m ature technology both in the