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    ASY TRANSISTOR Search Results

    ASY TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    ASY TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    acs710

    Abstract: SOT-23 marking 12F marking codes transistors sot-223 ON SEMI 10uF/16v CAPACITOR 0603 panasonic capacitor date codes panasonic erj date codes IC SUBSTITUTION lm317 substitution Loranger 04337 10uf 16V capacitor
    Text: 85-0350 ACS710 Demo Board Originator: Shawn Upton Design Cover Sheet Page 1 of 2 000-REV 000-TOP 000-OPT 000-ASY 000-TST A A A A A pdf pdf pdf pdf pdf Design Rev -> Name, Description Revision Control Top Level Instructions Build Options Construction Notes


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    PDF ACS710 000-REV 000-TOP 000-OPT 000-ASY 000-TST 001-BOM 001-SCH 001-BD1 001-SS1 SOT-23 marking 12F marking codes transistors sot-223 ON SEMI 10uF/16v CAPACITOR 0603 panasonic capacitor date codes panasonic erj date codes IC SUBSTITUTION lm317 substitution Loranger 04337 10uf 16V capacitor

    RTSX32

    Abstract: 54SX32 034 MEC RTSX16
    Text: Preliminary v1.5.1 54SX Family FPGAs RadTolerant and HiRel Fe a t ur es • Up to 225 User I/Os Rad To ler ant 54S X Fam i ly • Up to 1,080 Dedicated Flip-Flops • Tested Total Ionizing Dose TID Survivability Level E asy L ogi c In teg ra ti on • Radiation Performance to 100Krads (Si) (ICC Standby


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    PDF 100Krads RTSX32 54SX32 034 MEC RTSX16

    RTSX32

    Abstract: TRANSISTOR ASY 28 54SX A54SX16 A54SX32 RT54SX Cqfp256
    Text: Preliminary v1.5.2 54SX Family FPGAs RadTolerant and HiRel Fe a t ur es • Up to 225 User I/Os Rad To ler ant 54S X Fam i ly • Up to 1,080 Dedicated Flip-Flops • Tested Total Ionizing Dose TID Survivability Level E asy L ogi c In teg ra ti on • Radiation Performance to 100Krads (Si) (ICC Standby


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    PDF 100Krads RTSX32 TRANSISTOR ASY 28 54SX A54SX16 A54SX32 RT54SX Cqfp256

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    Abstract: No abstract text available
    Text: Preliminary v1.5 54SX Family FPGAs RadTolerant and HiRel Fe a t ur es • Up to 225 User I/Os Rad To ler ant 54S X Fam i ly • Up to 1,080 Dedicated Flip-Flops • Tested Total Ionizing Dose TID Survivability Level E asy L ogi c In teg ra ti on • Radiation Performance to 100Krads (Si) (ICC Standby


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    PDF 100Krads

    54SX32

    Abstract: TRANSISTOR ASY 28 tIRD12 DSA0036603 CQFP 256 PIN actel CQ25 54SX16
    Text: Preliminary v1.5 54SX Family FPGAs RadTolerant and HiRel Fe a t ur es • Up to 225 User I/Os Rad To ler ant 54S X Fam i ly • Up to 1,080 Dedicated Flip-Flops • Tested Total Ionizing Dose TID Survivability Level E asy L ogi c In teg ra ti on • Radiation Performance to 100Krads (Si) (ICC Standby


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    PDF 100Krads 54SX32 TRANSISTOR ASY 28 tIRD12 DSA0036603 CQFP 256 PIN actel CQ25 54SX16

    ASG TRANSISTOR

    Abstract: marking code ASY transistor ASY Asy transistor ASG sot-23 marking ASG KTA1504 asy marking code transistor ASG transistor sot23 asg
    Text: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor FEATURES z Complementary To KTC3875. z Excellent HFE Linearity. z Low noise. KTA1504 Pb Lead-free APPLICATIONS z General purpose application, switching application. SOT-23


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    PDF KTA1504 KTC3875. OT-23 BL/SSSTC054 ASG TRANSISTOR marking code ASY transistor ASY Asy transistor ASG sot-23 marking ASG KTA1504 asy marking code transistor ASG transistor sot23 asg

    transistor ASG

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors KTA1504 SOT-23 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2.4 1.3 0.95 0.4 2.9 Collector current ICM: -0.15 A Collector-base voltage V(BR)CBO: -50 V Operating and storage junction temperature range


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    PDF OT-23 KTA1504 OT-23 -10mA transistor ASG

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    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTA1504 SOT-23 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2.4 1.3 0.95 0.4 2.9 Collector current ICM: -0.15 A Collector-base voltage V(BR)CBO:


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    PDF OT-23 KTA1504 OT-23 -10mA

    transistor smd AsG

    Abstract: No abstract text available
    Text: Diodes IC Transistors Transistor T SMD Type Product specification KTA1504 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 1 0.55 ● Collector Current: IC=-150mA +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector Power Dissipation: PC=150mW 0.4 3 2 +0.1 0.95-0.1


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    PDF KTA1504 OT-23 -150mA 150mW -100mA, -10mA transistor smd AsG

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTA1504 TRANSISTOR PNP SOT–23 FEATURES  Complementary to KTC3875  Low Noise  Excellent hFE Linearity 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    PDF OT-23 KTA1504 KTC3875 -100mA, -10mA

    Asy transistor

    Abstract: transistor ASY TRANSISTOR ASY 75 germanium transistor asy asy70 TRANSISTOR ASY 0.25 W asy oi TRANSISTOR Q60118-Y48-D Q60118-Y48-E Q60118-Y70-D
    Text: 2SC D • r- 3 7 - o i fl235b05 00QMGÛ7 b « S I E G PNP Transistors for Switching Applications A SY48 A SY70 - SIEMENS A K TI EN GE SE LL SCH AF Not for new design ASY 48 and ASY 70 are alloyed germanium PNP transistors in 1 A 3 DIN 41871 case


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    PDF fl235fc ASY48 ASY70 Q60118-Y82 Q60118-Y48-D Q60118-Y48-E Q60118-Y48-F Q60118-Y81 Q60118-Y70-D Q60118-Y70-E Asy transistor transistor ASY TRANSISTOR ASY 75 germanium transistor asy asy70 TRANSISTOR ASY 0.25 W asy oi TRANSISTOR Q60118-Y48-D Q60118-Y48-E Q60118-Y70-D

    ASY27

    Abstract: ASY26 ASY 27 Asy transistor Q601 PNP-Germanium
    Text: ASY26, ASY ,27 Not for new d e v e lo p m e n t PNP-Transistors for switching applications A SY 26 and A S Y 27 are P N P-germ anium -transistors in a case 5 A 3 D IN 41 8 7 3 TO —5 . The base terminal is electrically connected to the case. The transistors


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    PDF ASY26, ASY26 ASY27 Q60118-Y26 Q60118 ASY27 ASY 27 Asy transistor Q601 PNP-Germanium

    317L

    Abstract: 317lb 317LZ TRANSISTOR ASY 19
    Text: Semiconductor LM317L 3-Terminal Adjustable Regulator • O utput is short circuit protected G en eral D escrip tio n The LM 317L is an adjustable 3-term inal positive voltage regulator capable o f supplying 100 m A o ver a 1 .2V to 37V output range. It is exceptionally e asy to use and requires


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    PDF LM317L 317L 317lb 317LZ TRANSISTOR ASY 19

    pin out of lm338

    Abstract: adjustable current limiter lm338 20A Adjustable lm338k LM338T 7105A-at7 502 LM338 OF IC LM338 LM138 STEEL 7105A-AT2-502 LM138K
    Text: LM138/LM338 5-Amp Adjustable Regulators General Description The LM 138 series of adjustable 3-term inal positive voltage regulators is capable of supplying in excess of 5 A over a 1.2V to 32V output range. T hey are exceptionally e asy to use and require only 2 resistors to set the output voltage.


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    PDF LM138/LM338 LM138 12Ato pin out of lm338 adjustable current limiter lm338 20A Adjustable lm338k LM338T 7105A-at7 502 LM338 OF IC LM338 LM138 STEEL 7105A-AT2-502 LM138K

    germanium transistors NPN

    Abstract: ASY 29 2N1304 npn germanium 1302 germanium npn 1308 ic ASY29 2N1308
    Text: NPN Germanium Transistors NPN G erm anium R F A llo y Tran sisto rs in T 0 5 metal case Type M a xim um Ratings BV CEO C haracteristics @ 2 5 ° C B V CBO V B V E ßO V 1CM A pr o r 1 W J JM °C hFE V ASY 28 A S Y 29 15 15 30 25 20 20 0.3 0.3 0.15 0.15 85


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    PDF 15/1L_ germanium transistors NPN ASY 29 2N1304 npn germanium 1302 germanium npn 1308 ic ASY29 2N1308

    MFQ1000C

    Abstract: B757T
    Text: M O T O RO L A SC XSTRS/R F 12E 0 I t3t?5SM Q U AD DUAL-IN-LINE N-CHANNEL EN H ANCEM EN T M O D E SILICON GATE TM O S FIELD EFFECT TRANSISTORS • Fast Sw itching S pee d — t0 n = toff = 10 ns M ax • L o w Drive R equirem ent, V e S th = 2.5 V M ax • Inherent Current Sharing Capability Perm its E asy Paralleling


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    Untitled

    Abstract: No abstract text available
    Text: 19-1249; RevOa; 10/97 e v a lu a tio n s 6 AVAILABLE; _ 6 2 2 M b p s L A N / WA N L a s e r D r i v e r w i t h A u t o m a t i c Power Control and Safety Shutdown The M AX3766 is a co m p le te , e asy-to-p ro gram laser d rive r fo r fib e r o ptic LAN transm itters, optim ized for


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    PDF AX3766

    ATIC 164 D2

    Abstract: dece2x4 ATIC 164 D2 44 pin ATIC 164 D2 48 pin
    Text: A10M20A Mask Programmed Gate Array Preliminary Features Description • H igh G a te C o u n t: 2000 g a te arra y gates 5000 P L D /L C A e q u iv alen t g ates • P in-for-Pin C o m p atib le w ith A ctel's A 1020A F P G A a t Low er C ost • E asy C onvension F rom F P G A to M ask Pro g ram m ed G ate


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    PDF A10M20A 100-Pin ATIC 164 D2 dece2x4 ATIC 164 D2 44 pin ATIC 164 D2 48 pin

    ASY26

    Abstract: oc44 ASY27 oc45 asy63 OC42 pnp germanium transistor transistor t05 OC44N ASY 27
    Text: PNP Germanium Transistors PIMP G erm anium RF A llo y Transistors in T 0 1 and T 0 5 m etal cases Type Characteristics at T amb= 25°C Maximum ratings Case bv C£0 V 15 15 10 5 10 10 10 10 - B V C SO V bvebo 30 25 30 20 16 16 16 16 26 16 16 15 15 20


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    PDF OC44N ASY26 oc44 ASY27 oc45 asy63 OC42 pnp germanium transistor transistor t05 OC44N ASY 27

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    Asy transistor

    Abstract: transistor ASY TRANSISTOR ASY 77 asy70 germanium transistor asy ASY48 TRANSISTOR ASY 75
    Text: ASY48, ASY70 PNP-Transistors for switching applications A S Y 48 and A S Y 7 0 are alloyed PNP-germanium transistors in a case 1 A 3 DIN 41 871 sim. TO-1 . The leads are electrically insulated from the case. The collector terminal is indicated by a red dot on the rim of the case. These transistors are particularly


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    PDF 70are Q60118- Q62901- 10K/W ASY70 Asy transistor transistor ASY TRANSISTOR ASY 77 asy70 germanium transistor asy ASY48 TRANSISTOR ASY 75

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    germanium transistor asy

    Abstract: 18y4 ASY48 21 k 1564 y703
    Text: ESC D • Û235b05 00040Û7 r - 37 - 0 7 b H SIE6 ASY48 ASY70 PNP Transistors for Switching Applications - SIEMENS A K T IE N G E S E LL S C H A F Not for new design A S Y 48 and A S Y 70 are alloyed germanium PN P transistors in 1 A 3 DIN 41871 case


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    PDF 235b05 ASY48 ASY70 18-Y48-D 18-Y48-E 18-Y48-F 60118-Y81 0118-Y70-D 18-Y70-E 62quency germanium transistor asy 18y4 21 k 1564 y703

    kt420

    Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
    Text: Introduction This summary contains abridged information on the range of NKT semiconductor products, and the five main product groups are listed below. a HYBRID MICROCIRCUITS b) SILICON TRANSISTORS c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS


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