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    Samtec Inc USBR-A-S-S-O-TH

    CONN RCPT USB2.0 TYPEA 4POS R/A
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    DigiKey USBR-A-S-S-O-TH Tray 12,253 1
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    Mouser Electronics USBR-A-S-S-O-TH 8,459
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    Newark USBR-A-S-S-O-TH Bulk 668 1
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    USBR-A-S-S-O-TH Bulk 87 1
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    Powell Electronics USBR-A-S-S-O-TH 2,553 1
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    Avnet Abacus USBR-A-S-S-O-TH 472 4 Weeks 1
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    Chip1Stop USBR-A-S-S-O-TH 35,040
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    IBS Electronics USBR-A-S-S-O-TH 172 388
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    Master Electronics USBR-A-S-S-O-TH 2,367
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    Sager USBR-A-S-S-O-TH 6,026 1
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    Samtec Inc USBR-A-S-S-O-VU

    CONN RCPT USB2.0 TYPEA 4POS VERT
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    DigiKey USBR-A-S-S-O-VU Tray 1,065 1
    • 1 $2.93
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    Avnet Americas USBR-A-S-S-O-VU Tray 2 Weeks, 5 Days 1
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    Mouser Electronics USBR-A-S-S-O-VU 277
    • 1 $2.72
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    Newark USBR-A-S-S-O-VU Bulk 490 1
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    Powell Electronics USBR-A-S-S-O-VU 3,060 1
    • 1 $2.93
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    Avnet Abacus USBR-A-S-S-O-VU 4 Weeks 1
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    Chip1Stop USBR-A-S-S-O-VU 188
    • 1 $3.89
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    Master Electronics USBR-A-S-S-O-VU 940
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    Sager USBR-A-S-S-O-VU 5,774 1
    • 1 $2.93
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    • 1000 $1.17
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    3M Interconnect FP301-1/4-6"-ASSORTED-10-21 PC PKS

    HEATSHRINK FP301 1/4-6" ASSORTED
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    DigiKey FP301-1/4-6"-ASSORTED-10-21 PC PKS Bulk 18 1
    • 1 $20.45
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    3M Interconnect FP301-1/8-6"-ASSORTED-10-28 PC PKS

    HEATSHRINK FP301 1/8-6" ASSORTED
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    DigiKey FP301-1/8-6"-ASSORTED-10-28 PC PKS Bulk 17 1
    • 1 $29.4
    • 10 $25.525
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    3M Interconnect FP301-3/16-6"-ASSORTED-10-21 PC PKS

    HEATSHRINK FP301 3/16-6" 1=1PACK
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    DigiKey FP301-3/16-6"-ASSORTED-10-21 PC PKS Bulk 17 1
    • 1 $20.53
    • 10 $17.825
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    ASSO Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Type PDF
    101K Associated Components Inductor: RF: Shielded: 100u: 10%: 2.5M: 50: 160m Original PDF
    A2-220K Associated Components Inductor: RF: 22u: 10%: 2.5M: 50: 140m: Axial: T/R Original PDF
    A2-221K Associated Components Inductor: RF: 220u: 10%: 0.79M: 30: 52m: Axial: T/R Original PDF
    A2-271K Associated Components Inductor: RF: 270u: 10%: 0.79M: 30: 47m: Axial: T/R Original PDF
    A2-2R2K Associated Components Inductor: RF: 2.2u: 10%: 7.9M: 30: 395m: Axial: T/R Original PDF
    A2-2R7K Associated Components Inductor: RF: 2.7u: 10%: 7.9M: 37: 355m: Axial: T/R Original PDF
    A2-330K Associated Components Inductor: RF: 33u: 10%: 2.5M: 45: 130m: Axial: T/R Original PDF
    A2-331K Associated Components Inductor: RF: 330u: 10%: 0.79M: 30: 45m: Axial: T/R Original PDF
    A2-3R3K Associated Components Inductor: RF: 3.3u: 10%: 7.9M: 45: 270m: Axial: T/R Original PDF
    A2-3R9K Associated Components Inductor: RF: 3.9u: 10%: 7.9M: 45: 250m: Axial: T/R Original PDF
    A2-470K Associated Components Inductor: RF: 47u: 10%: 2.5M: 45: 110m: Axial: T/R Original PDF
    A2-471K Associated Components Inductor: RF: 470u: 10%: 0.79M: 30: 36m: Axial: T/R Original PDF
    A2-4R7K Associated Components Inductor: RF: 4.7u: 10%: 7.9M: 45: 230m: Axial: T/R Original PDF
    A2-560K Associated Components Inductor: RF: 56u: 10%: 2.5M: 45: 100m: Axial: T/R Original PDF
    A2-561K Associated Components Inductor: RF: 560u: 10%: 0.79M: 30: 35m: Axial: T/R Original PDF
    A2-5R6K Associated Components Inductor: RF: 5.6u: 10%: 7.9M: 50: 185m: Axial: T/R Original PDF
    A2-680K Associated Components Inductor: RF: 68u: 10%: 2.5M: 50: 92m: Axial: T/R Original PDF
    A2-820K Associated Components Inductor: RF: 82u: 10%: 2.5M: 50: 88m: Axial: T/R Original PDF
    A2-821K Associated Components Inductor: RF: 820u: 10%: 0.79M: 30: 29m: Axial: T/R Original PDF
    A2-8R2K Associated Components Inductor: RF: 8.2u: 10%: 7.9M: 55: 155m: Axial: T/R Original PDF
    ...

    ASSO Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor zo 107

    Abstract: 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor
    Text: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features ? Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz


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    PDF OT343 CFH400 Q62702-G0116 volt-69 Rn/50 transistor zo 107 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor

    2PG001

    Abstract: Panasonic IGBT TO220 2PG002 2PG003
    Text: Fast switching 150 ns and low VCE(sat) (2.4 V) PDP Drive IGBT Devices: 2PG00X Series „ Overview The 2PG00X series are PDP drive IGBT devices that respond to the needs for fast switching and low loss characteristics associated with the increasing image quality and lower power of PDP displays. These


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    PDF 2PG00X 2PG001ã 2PG002/2PG003ã 150ns 2PG002ã 190ns 2PG001 Panasonic IGBT TO220 2PG002 2PG003

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 3-TERMINAL POSITIVE LINEAR REGULATOR AZ78LXX General Description Features The AZ78LXX series are three terminal positive regulators with several fixed output voltages. These regulators can provide local on card regulation, eliminating the distribution problems associated with single point


    Original
    PDF AZ78LXX AZ78LXX 100mA

    Untitled

    Abstract: No abstract text available
    Text: 125L Series www.vishay.com Vishay Cera-Mite AC Line Rated Ceramic Disc Capacitors Class X1, 400 VAC/Class Y4, 125 VAC FEATURES • Worldwide safety agency recognition Underwriters laboratories - UL 1414 Canadian standards association - CSA 22.2 European EN132400 to IEC 60384-14 2nd edition


    Original
    PDF EN132400 2002/95/EC 11-Mar-11

    cera-mite capacitor marking code

    Abstract: 125-X1-400 102M 125L
    Text: 125L Series www.vishay.com Vishay Cera-Mite AC Line Rated Ceramic Disc Capacitors Class X1, 400 VAC/Class Y4, 125 VAC FEATURES • Worldwide safety agency recognition Underwriters laboratories - UL 1414 Canadian standards association - CSA 22.2 European EN132400 to IEC 60384-14 2nd edition


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    PDF EN132400 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 cera-mite capacitor marking code 125-X1-400 102M 125L

    MIL-1-7444

    Abstract: MIL-1-23053 47-10150-XX
    Text: Heat Shrink Tubing Thin Wall, 2:1 Shrink Ratio Includes Assortment Packs Description: NTE’s Thin Wall Heat Shrink Tubing is a high performance, multi purpose, professional grade, flexible, flame retardant, polyolefin based heat−shrinkable tubing with excellent electrical, chemical and


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    PDF MIL-DTL-23053/5, HS-ASST-10 HS-ASST-11 HS-ASST-12 MIL-1-7444 MIL-1-23053 47-10150-XX

    Untitled

    Abstract: No abstract text available
    Text: MIC2557 Micrel MIC2557 PCMCIA Card Socket VPP Switching Matrix • • • General Description The MIC2557 switches the four voltages required by PCMCIA Personal Computer Memory Card International Association card VPP Pins. The MIC2557 provides selectable 0V, 3.3V,


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    PDF MIC2557 MIC2557 120mA.

    Untitled

    Abstract: No abstract text available
    Text: MIC2562A Micrel MIC2562A PCMCIA/CardBus Socket Power Controller General Description Applications The MIC2562A PCMCIA Personal Computer Memory Card International Association and CardBus Power Controller handles all PC Card slot power supply pins, both VCC and VPP.


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    PDF MIC2562A MIC2562A 250mA 14-Pin 16-Pin

    RELECO S3-B

    Abstract: s3ct RELECO S2-B RELECO C3 MR-C, RELECO A114 A231 S3-MP releco MR-c c3s111
    Text: MRC series S3-B Socket for 11-pin standard relay according to IEC 67-I-18b Type S3-B 3-pole, 1 connection level Coding ring optional Integrated retaining clip and labelling space Rated current 10 A Associated, plug-in 11-pin MRC relays Suitable for holding the Releco coding ring


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    PDF 11-pin 67-I-18b RELECO S3-B s3ct RELECO S2-B RELECO C3 MR-C, RELECO A114 A231 S3-MP releco MR-c c3s111

    NE425S01

    Abstract: NE425S01-T1 NE425S01-T1B
    Text: PRELIMINARY DATA SHEET C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NE425S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES • SUPER LOW NOISE FIGURE: 0.60 dB TYP at 12 GHz 24 • HIGH ASSOCIATED GAIN: 12.0 dB TYP at f = 12 GHz Noise Figure, NF dB


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    PDF NE425S01 NE425S01 NE425S01-T1 NE425S01-T1B 24-Hour NE425S01-T1 NE425S01-T1B

    EPA025A-70

    Abstract: 0466 1.5 micron
    Text: Excelics EPA025A-70 DATA SHEET High Efficiency Heterojunction Power FET     6 6  '  • • • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +21.5dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN AT 18GHz TYPICAL 0.85dB NOISE FIGURE AND 11.0dB ASSOCIATED GAIN AT 12GHz


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    PDF EPA025A-70 70mil 18GHz 12GHz Rn/50 EPA025A-70 0466 1.5 micron

    kf 203 transistor

    Abstract: 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor NE681
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION


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    PDF NE681 NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 kf 203 transistor 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor

    LP7512

    Abstract: LP7512P70 MIL-HDBK-263 ultra low idss
    Text: LP7512P70 PACKAGED ULTRA LOW NOISE PHEMT • FEATURES ♦ 0.7 dB Noise Figure at 12 GHz ♦ 12 dB Associated Gain at 12 GHz ♦ 0.4 dB Noise Figure at 2 GHz ♦ 18 dB Associated Gain at 2 GHz ♦ Low DC Power Consumption: 30mW • DESCRIPTION AND APPLICATIONS


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    PDF LP7512P70 LP7512P70 LP7512 MIL-STD-1686 MIL-HDBK-263. MIL-HDBK-263 ultra low idss

    Toroid 3E2A

    Abstract: UC3901N Toroid 3E2A or equivalent uc2901 smps a42 UC1901L ferrite cores 3E2A PLCC-20 SOIC-14 SOIC-16
    Text: UC1901 UC2901 UC3901 Isolated Feedback Generator FEATURES DESCRIPTION • An Amplitude-Modulation System for Transformer Coupling an Isolated Feedback Error Signal The UC1901 family is designed to solve many of the problems associated with closing a feedback control loop across a voltage isolation


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    PDF UC1901 UC2901 UC3901 UC1901 UC1901Amplifiers Toroid 3E2A UC3901N Toroid 3E2A or equivalent uc2901 smps a42 UC1901L ferrite cores 3E2A PLCC-20 SOIC-14 SOIC-16

    DALLAS 2501

    Abstract: LT1097 x9241w
    Text: TECH BRIEF The Premise The Design: IMPLEMENTING PROGRAMMABLE T-NETWORKS USING XDCPs—IGSF FILTERS Implementing a traditional T-network using XDCPs results in a programmable T-network, and the analog function associated with the T-network becomes programmable as well. In other words, using


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    PDF X9418W DALLAS 2501 LT1097 x9241w

    diode 47c

    Abstract: CAB-34F CAB-14F ohmite 80 series ohmite 10 series
    Text: Ohmite Cabinet Resistor Assortments are available from stock. They consist of sturdy plastic cabinets with compartmentalized drawers. Resistors are sorted by ohmic value. Each cabinet contains resistor types and values which are available from Ohmite stock.


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    PDF CAB-525C CAB-46C CAB-22F CAB-34F CAB-23F CAB-43F CAB-24F CAB-44F CAB-14F CAB-15F diode 47c CAB-34F CAB-14F ohmite 80 series ohmite 10 series

    MS51830

    Abstract: NAS1394 NAS1395 MS51830-201L NAS1394C3L MS51830-202 ms51830-201 NAS1394C3 MS51831-102 m6 bolt shear strength
    Text: UniSert Kit Assortments Repair Kits UniSert Kit Assortments Convenient UniSert Kits − the right Insert and the correct Installation Tool for your repairs. UNITED INSERTS INCLUDED IN KIT KIT NO. ID UNITED THD PART NO. UNF FINE KIT QTY UDB-1-US-F TOOLS INCLUDED


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    PDF UDB-1428-US UDB-14-UST UDB-51624-US UDB-516-UST UDB-3824-US UDB-38-UST UDB-122J0-US UDB-12-UST UDB-5818-US UDB-58-UST MS51830 NAS1394 NAS1395 MS51830-201L NAS1394C3L MS51830-202 ms51830-201 NAS1394C3 MS51831-102 m6 bolt shear strength

    NE33284AS

    Abstract: NE33284A NE33284A-SL NE33284A-T1 MODEL 536
    Text: SUPER LOW NOISE HJ FET • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE DESCRIPTION Noise Figure, NF dB • HIGH ASSOCIATED GAIN:


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    PDF NE33284A 24-Hour NE33284AS NE33284A-SL NE33284A-T1 MODEL 536

    AT-41410

    Abstract: 41410 bipolar transistor 6 GHz UHF transistor GHz AT41410 NF50 S21E
    Text: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41410 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High Associated Gain: 14.0 dB Typical at 2.0 GHz 10.0 dB Typical at 4.0 GHz • High Gain-Bandwidth


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    PDF AT-41410 AT-41410 AT41410 RN/50 5965-8923E 41410 bipolar transistor 6 GHz UHF transistor GHz NF50 S21E

    nec 8772

    Abstract: LD 7522 142.58 NE32584C NE32584C-S NE32584C-T1 cha 9935 K 4017 j50 0513 5 5252 f 1001
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32584C NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.2 • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz 24 21 • LG ≤ 0.20 µm, WG = 200 µm • LOW COST METAL CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE


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    PDF NE32584C NE32584C NE32584C-S NE32584C-T1 24-Hour nec 8772 LD 7522 142.58 NE32584C-S NE32584C-T1 cha 9935 K 4017 j50 0513 5 5252 f 1001

    GHZ micro-X ceramic Package

    Abstract: ATF-10736 ATF-10736-STR ATF-10736-TR1 10736
    Text: 0.5 – 12 GHz General Purpose Gallium Arsenide FET Technical Data ATF-10736 36 micro-X Package Features Description • High Associated Gain: 13.0 dB Typical at 4 GHz The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor


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    PDF ATF-10736 ATF-10736 5965-8698E GHZ micro-X ceramic Package ATF-10736-STR ATF-10736-TR1 10736

    TGF1350

    Abstract: No abstract text available
    Text: Texas Instruments TGF1350 Low-Noise Microwave GaAs FET Features • 1.5-dB noise figure with 11 -dB associated gain at 10 GHz ■ 2.2-dB noise figure with 7-dB associated gain at 18 GHz ■ All-gold metallization ■ Recessed 1/2-^m gate structure ■ Si3N4 channel passivation


    OCR Scan
    PDF TGF1350 TGF1350

    20TAWG

    Abstract: 3E2A UC1901 UC2901
    Text: Iapplication flj IN F Ö 1 H 1 available j UNITRODE UC1901 UC2901 UC3901 Isolated Feedback Generator FEATURES DESCRIPTION • An Amplitude-Modulation System for Transformer Coupling an Isolated Feedback Error Signal The UC1901 family is designed to solve many of the problems associ­


    OCR Scan
    PDF UC1901 UC2901 UC3901 700nA, 20TAWG 3E2A

    low noise pseudomorphic

    Abstract: No abstract text available
    Text: MwT - H4 26 GHz Low Noise Pseudomorphic HEMT GaAs FET_ MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES — 50 • 0.9 dB NOISE FIGURE AT 12 GHZ • HIGH ASSOCIATED GAIN 1241 8.4 •0.3 MICRON REFRACTORY METAL /GOLD GATE


    OCR Scan
    PDF