4.5" OD tubing details
Abstract: No abstract text available
Text: TITLE DOCUMENT No. DATE REV. PAGE ASR Cable Specifications CABLE-ASR 6/25/12 - 1 of 2 The ASR series of VNA test cables offers a high performance assembly for precision test applications. It provides a test setup which will maintain its configuration for a very repeatable test platform. The NMD connectors*
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db/100ft)
lbs/100ft)
Kg/100m)
4.5" OD tubing details
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Untitled
Abstract: No abstract text available
Text: TITLE DOCUMENT No. DATE REV. PAGE ASR-F Cable Specifications CABLE-ASR-F 6/26/12 - 1 of 2 The ASR-F series of VNA test cables offers a flexible alternative to the original high performance ASR design. It offers a durable construction for long-lasting and repeatable test results. The NMD connectors* allow for
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lbs/100ft)
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514400BJ-50
Abstract: Q67100-Q973 Q67100-Q756
Text: 1M x 4-Bit Dynamic RAM HYB 514400BJ-50/-60 Advanced Information • 1 048 576 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page Mode Operation • Performance: -50 -60 tRAC RAS access time 50 60 ns tCAC CAS access time 13 15
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514400BJ-50/-60
P-SOJ-26/20-2
GPJ09100
514400BJ-50
Q67100-Q973
Q67100-Q756
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HYB3117800
Abstract: HYB5117800 SOJ-28
Text: 2M x 8 - Bit Dynamic RAM 2k Refresh Fast Page Mode HYB 5117800/BSJ-50/-60 HYB 3117800BSJ-50/-60 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance: -50 -60 tRAC
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5117800/BSJ-50/-60
3117800BSJ-50/-60
HYB5117800
HYB3117800
SPT03042
117800/BSJ-50/-60
GPJ05699
P-SOJ-28-3
400mil)
HYB3117800
HYB5117800
SOJ-28
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WCs MARKING
Abstract: 514100BJ Q67100-Q759 Q67100-Q971 SMD MARKING CODE RAC code marking rah SMD MARKING code ASC
Text: 4M x 1-Bit Dynamic RAM HYB 514100BJ-50/-60 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 °C operating temperature • Fast Page Mode Operation • Performance: -50 -60 tRAC RAS access time 50 60 ns tCAC CAS access time 13 15
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514100BJ-50/-60
P-SOJ-26/20-2
GPJ09100
WCs MARKING
514100BJ
Q67100-Q759
Q67100-Q971
SMD MARKING CODE RAC
code marking rah
SMD MARKING code ASC
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SPT0305
Abstract: Q67100-Q2021 Q67100-Q727
Text: 256k x 16-Bit Dynamic RAM HYB 514171BJ-50/-60 Advanced Information • • • • • • • • • 262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time • Standby power dissipation 11 mW standby TTL 5.5 mW max. standby (CMOS)
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16-Bit
514171BJ-50/-60
SPT03055
GPJ09018
SPT0305
Q67100-Q2021
Q67100-Q727
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transistor WTs smd
Abstract: SMD MARKING code ASC
Text: 1M x 4-Bit Dynamic RAM HYB 314400BJ-50/-60 Advanced Information • 1 048 576 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page Mode Operation • Performance: -50 -60 tRAC RAS access time 50 60 ns tCAC CAS access time 13 15
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314400BJ-50/-60
P-SOJ-26/20-2
GPJ09100
transistor WTs smd
SMD MARKING code ASC
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SPT0305
Abstract: Q67100-Q2072 Q67100-Q2073 Q67100-Q2100
Text: 256k x 16-Bit EDO-DRAM HYB 514175BJ-50/-55/-60 Advanced Information • • • • • • • • • 262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time • Low Power dissipation max. 1100 mW active -50 version
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16-Bit
514175BJ-50/-55/-60
cycles/16
P-SOJ-40-1
SPT03055
514175BJ/BJL-50/-55/-60
GPJ09018
SPT0305
Q67100-Q2072
Q67100-Q2073
Q67100-Q2100
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smd code marking rac
Abstract: HYB3118160 HYB5118160 RAD SMD MARKING CODE
Text: 1M x 16-Bit Dynamic RAM 1k Refresh Fast Page Mode HYB 5118160BSJ-50/-60 HYB 3118160BSJ-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance: -50 -60 tRAC
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16-Bit
5118160BSJ-50/-60
3118160BSJ-50/-60
HYB5118160
HYB3118160
P-TSOPII-50/44-1
GPX05958
smd code marking rac
HYB3118160
HYB5118160
RAD SMD MARKING CODE
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SPT0305
Abstract: BST50 SMD MARKING CODE RAC HYB3118165 HYB5118165 5118165BSJ-60 5118165BSJ
Text: 1M x 16-Bit Dynamic RAM 1k Refresh Hyper Page Mode-EDO HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:
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16-Bit
5118165BSJ/BST-50/-60
3118165BSJ/BST-50/-60
HYB5118165
HYB3118165
P-TSOPII-50/44-1
GPX05958
SPT0305
BST50
SMD MARKING CODE RAC
HYB3118165
HYB5118165
5118165BSJ-60
5118165BSJ
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Q67100-Q1104
Abstract: SOJ-28
Text: 2M x 8-Bit Dynamic RAM 2k Refresh Hyper Page Mode-EDO HYB 5117805/BSJ-50/-60 HYB 3117805/BSJ-50/-60 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance: -50
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5117805/BSJ-50/-60
3117805/BSJ-50/-60
SPT03042
117805/BSJ-50/-60
GPJ05699
P-SOJ-28-3
400mil)
Q67100-Q1104
SOJ-28
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Untitled
Abstract: No abstract text available
Text: VIS VG264260CJ 262,144 x 16 - Bit CMOS Dynamic RAM Preliminary Description The device is CMOS Dynamic RAM organized as 262, 144-word x 16 bits. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design technologies. It is packaged in
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VG264260CJ
144-word
40-pin
25/28/30/35/40ns
1G5-0125
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Untitled
Abstract: No abstract text available
Text: VIS VG264260CJ 262,144 x 16 - Bit CMOS Dynamic RAM Preliminary Description The device is CMOS Dynamic RAM organized as 262, 144-word x 16 bits. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design technologies. It is packaged in
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VG264260CJ
144-word
40-pin
25/28/30/35/40ns
1G5-0125
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Untitled
Abstract: No abstract text available
Text: TO SH IBA TC55V1001 AF/AFT/ATR/AST/ASR-85,-10,-85L.-1 OL T O SH IB A M O S DIGITAL INTEGRATED CIRCUIT SILICON GATE C M O S 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001AF/AFT/ATR/AST/ASR is a 1,048,576-bit static random access memory SRAM organized as
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TC55V1001
AF/AFT/ATR/AST/ASR-85
072-WORD
TC55V1001AF/AFT/ATR/AST/ASR
576-bit
AF/AFT/ATR/AST/ASR-85t-10
32-P-0820-0
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D1068
Abstract: CD 76 13 CP
Text: Do 0 9 I r ~ 0 5 - 2 a 9.L Oo. 0 2 I a •V pI 1Q2 Do S Z = o i o ¿ [ MI * I (Do Q2 = 'ei1) D ¿ [ y ia g ú vr a i Voi o i 6 10 asr 3l Ú ( v T 'i ) VI dD l AO I oasA A00 6 030 a A0 0 0 I O SD a A — // i- A. ¿ ¿ / A lliT - n TZ C y V 'X jg,2¡? -í Í T • ^ ^ / i C
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7-2T-1405
900Vf
D1068
17-2T-14
D1068
CD 76 13 CP
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mt4c1004j
Abstract: 4C1004 4c1004j
Text: MT4C1004J L 4 MEG X 1 DRAM |u iic = n o N DRAM 4 MEG x 1 DRAM 5V, FAST PAGE MODE, OPTIONAL EXTENDED REFRESH FEATURES • 1,024-cy cie refresh d istrib u ted a cro ss 16m s (M T 4C 1004J) o r 128m s (M T 4C 1004J L only) • In d u stry-stan d ard p in o u t, tim ing , fu n ctio n s and
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MT4C1004J
024-cy
1004J)
1004J
20/26-Pla
4C1004
4c1004j
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Untitled
Abstract: No abstract text available
Text: MT4C4001 J L MEG X 4 DRAM DRAM 1 MEG x 4 DRAM 5V, FAST PAGE MODE, OPTIONAL EXTENDED REFRESH FEATURES • 1,024-cy cle refresh d istrib u ted acro ss 16m s (M T 4C 4001J) o r 128m s (M T 4C 4001J L) • In d u stry -sta n d a rd p in ou t, tim ing , fu nction s and
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MT4C4001
024-cy
4001J)
4001J
20/26-Pin
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Untitled
Abstract: No abstract text available
Text: 0U| 1X6o|oul|o x U0J3|1/\| ‘¿ 66 L© eo ito u I y suoiiE o^ioeds io s p n p o jd e B u e ijo o i m 6u e q i s e /u e s e j ‘ ou| ‘À6o|ouLjoej_ u o jo i^ A|uo ODA Lai 80d 9Qd TOd sad SSA uoa ozoa 6900 89 00 ODA ¿9 0 0 99 00 39oa woa SSA e9oa s9oa
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LH231G
Abstract: lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235
Text: MEMORIES ★Under development • M ask ROMs SlpÉHRfi Bonflgmllan jvorai x d m i NMOS <"^g|g|ï|ïi£- User1* No. sssysr Sllpjiijp 1 currant mA MAX. ■ Paefcagfe ft- • 64k 8k x 8 LH2389D LH2369XX 200 60 5 ± 10% 28DIP 128k 16k x 8 LH23128D LH2326XX 200
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28DIP
28DIP
LH2389D
LH23128D
LH23286D
LH236120
LH2310006D
LH231G
lh5348
LH538b
LH2326
lh5s4
LHMN5
lh5359
lh5348xx
lh537
LH235
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Untitled
Abstract: No abstract text available
Text: 0U| 1X6 o |oul |o x U0J3|1/\| ‘9 6 6 1. eo ito u suoiiE o^ioeds io s p n p o jd e B u e ijo o i m 6 u e q i s e /u e s e j ‘ ou| ‘À6o|ouLjoej_ u o jo i^ A|uo ODA ssa 9SL SSL i?sl SSL SSL LSL OSL 6LL 8LL ¿LL 9LL SLL HL SLL SLL LLL OLL 60 L 80 L ¿OL
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sem 2105 16 pin
Abstract: sem 2106 data set IC SEM 2105 MCM514258-10 sem 2106 circuit diagram sem 2106 514258 sem 2106 24 pin MCM514258-12 sem 2107
Text: MOTOROLA •i SEM ICONDUCTOR TECHNICAL DATA MCM514258 Advance Information 2 5 6 K x 4 CM O S Dynamic RAM P PACKAGE PLASTIC CA SE 738A Th e M CM514258 is a 1.2 n C M O S high-speed, dynamic random acce ss mem ory. It is organized a s 262,144 four-bit words and fabricated w ith C M O S silicon-gate process tech
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MCM514258
CM514258
MCM514258
514258P85
MCM514258P10
514258P12
514258J85
514258J10
514258J12
sem 2105 16 pin
sem 2106 data set
IC SEM 2105
MCM514258-10
sem 2106 circuit diagram
sem 2106
514258
sem 2106 24 pin
MCM514258-12
sem 2107
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Untitled
Abstract: No abstract text available
Text: SIEM EN S 2M x 8 - Bit Dynamic RAM 2k Refresh Fast Page Mode HYB 5117800/BSJ-50/-60 HYB 3117800BSJ-50/-60 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance: -50
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5117800/BSJ-50/-60
3117800BSJ-50/-60
HYB5117800
HYB3117800
cloJ-50/-60
SPT03042
117800/BSJ-50/-60
081nrrax
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we32100
Abstract: tC23E UNUSED26
Text: Zilog Product S p e c ifica tio n January 1987 Z32106 M AU MATH ACCELERATION UNIT DESCRIPTION T he Z32106 M ath A cceleration U nit M AU provides floating-point capability fo r the Z32100 M icroprocessor and is fully com patible with A N S I/IE E E Standard 754-1985 for Binary
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Z32106
Z32100
32bit)
64-bit)
80-bit)
32-bit
125-pin
we32100
tC23E
UNUSED26
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SASI
Abstract: cmps a13 grd 07 z32106 Z32100 IRR28 we32100
Text: Zilog P roduct S pecification January 1987 / O D ^ O ^ Z32106 M A U M A T H A C C E L E R A T IO N U N IT DESCRIPTION T he Z32106 M ath A cceleration U nit M AU provides floating-point capability fo r the Z32100 M icroprocessor and is fully com patible with
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Z32106
Z32100
32bit)
64-bit)
80-bit)
32-bit
125-pin
SASI
cmps a13
grd 07
IRR28
we32100
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