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diode B25 Abstract: B25-28 B25 diode Text: B25-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380" 4L STUD The B25-28 is Designed for VHF Class C Power Amplifier Applications up to 250 MHz. .112x45° A C B E FEATURES: E ØC • PG = 10 dB Typical at 25 W/175 MHz • ∞ Load VSWR at Rated Conditions	Original	PDF	B25-28 B25-28 112x45° ASI10803 diode B25 B25 diode

Catalog Datasheet

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diode B25

Abstract: B25-28 B25 diode
Text: B25-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380" 4L STUD The B25-28 is Designed for VHF Class C Power Amplifier Applications up to 250 MHz. .112x45° A C B E FEATURES: E ØC • PG = 10 dB Typical at 25 W/175 MHz • ∞ Load VSWR at Rated Conditions

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B25-28 B25-28 112x45° ASI10803 diode B25 B25 diode