ASI10672 Search Results

ASI10672 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
ASI10672		Advanced Semiconductor	NPN SILICON RF POWER TRANSISTOR		Original	PDF

ASI10672 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
UHBS60-1 Abstract: ASI10672 IC K 902 Text: UHBS60-1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS60-1 is Designed for Class C, FM Base Station Applications up to 900 MHz. PACKAGE STYLE .230 6L FLG FEATURES: A • Internal Input Matching Network • PG = 7.5 dB at 60 W/900 MHz • Omnigold Metalization System	Original	UHBS60-1 UHBS60-1 040x45° ASI10672 ASI10672 IC K 902	PDF
ASI10672 Abstract: UHBS60-1 transistor 355 Text: UHBS60-1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS60-1 is Designed for PACKAGE STYLE .230 6L FLG FEATURES: A .040x45° • • • Omnigold Metalization System B C 2XØ.130 4X .025 R .115 .430 D E .125 F G H MAXIMUM RATINGS I IC 9.0 A VCBO	Original	UHBS60-1 UHBS60-1 040x45° ASI10672 ASI10672 transistor 355	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

UHBS60-1

Abstract: ASI10672 IC K 902
Text: UHBS60-1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS60-1 is Designed for Class C, FM Base Station Applications up to 900 MHz. PACKAGE STYLE .230 6L FLG FEATURES: A • Internal Input Matching Network • PG = 7.5 dB at 60 W/900 MHz • Omnigold Metalization System

Original

UHBS60-1 UHBS60-1 040x45° ASI10672 ASI10672 IC K 902

PDF

ASI10672

Abstract: UHBS60-1 transistor 355
Text: UHBS60-1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS60-1 is Designed for PACKAGE STYLE .230 6L FLG FEATURES: A .040x45° • • • Omnigold Metalization System B C 2XØ.130 4X .025 R .115 .430 D E .125 F G H MAXIMUM RATINGS I IC 9.0 A VCBO