ASI10589
Abstract: FMB175
Text: FMB175 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB175 is a 28 V silicon NPN power transistor designed primarily for FM broadcast transmitters. Diffused emitter ballast provides high VSWR capability under rated operation conditions. PACKAGE STYLE .500 6L FLG
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FMB175
FMB175
ASI10589
ASI10589
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ASI10589
Abstract: FMB175 k20a
Text: FMB175 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB175 is Designed for PACKAGE STYLE .500 6L FLG FEATURES: A C • • • Omnigold Metalization System D MAXIMUM RATINGS G 2x ØN FULL R B IC 20 A VCBO 65 V VCEO 36 V VCES 65 V VEBO PDISS 270 W @ TC = 25 C
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FMB175
FMB175
ASI10589
ASI10589
k20a
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ASI10589
Abstract: FMB175 c 108 m 229
Text: FMB175 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB175 is Designed for Class C, FM Broadcast Applications up to 108 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x ØN • Class C Operation • PG = 10 dB at 175 W/108 MHz • Omnigold Metalization System
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FMB175
FMB175
ASI10589
ASI10589
c 108 m 229
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