CW20C104K
Abstract: CL31B104KBNC CY20C104M 474j capacitor CL31B102KBNC UP36BA0350 CW15C103K ECPU01105MA5 CL21B104KBNC CW20C473K
Text: Cornell Dubilier Electronics, Inc. - Complete Capacitor Cross Reference AERO M, AEROVOX, ARCO, ASC, ATC, AVX, BC/PHILIPS, BISHOP, CAL-CHIP, CENTRALAB, COOPER, ELECTROCUB, ELECTRONIC CONCEPTS, ELNA, EVOX, GE, HOBART, IBM, ILLINOIS CAP, JOHANSON, KEMET, KINGSTON, KOA, KORCHIP, KYOCERA, LELAND, LENNOX, MALLORY/NACC,
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AGA100M050
SKA100M050
AGA100M063
SKA100M063
AFK477M10F24T
AFK686M16D16T
AFK107M16D16T
AFK157M16X16T
AFK158M16H32T
AFK226M16C12T
CW20C104K
CL31B104KBNC
CY20C104M
474j capacitor
CL31B102KBNC
UP36BA0350
CW15C103K
ECPU01105MA5
CL21B104KBNC
CW20C473K
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Snubbers
Abstract: No abstract text available
Text: ASC 329/X329 IGBT Snubber Capacitors are designed for high demand environments as well as lower current applications. The 329 is a hybrid design combining self healing metallized film and foil to maintain very high peak and RMS currents. The X329 design utilizes only metallized film for applications
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329/X329
Snubbers
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Hitachi DSA00166
Abstract: Nippon capacitors
Text: HB56UW3273 Series 33554432-word x 72-bit High Density Dynamic RAM Module ADE-203-653 Z Preliminary Rev. 0.0 Sep. 6, 1996 Description The HB56UW3273 Series belongs to 8-byte DIMM (Dual in-line Memory Module) family , and has been developed an optimized main memory solution for 4 and 8-byte processor applications. The
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HB56UW3273
33554432-word
72-bit
ADE-203-653
HB56UW3273E
64-Mbit
HM5165405ATT)
16-bit
74LVT16244)
Hitachi DSA00166
Nippon capacitors
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74LVT16244
Abstract: HB56UW3273E-6A HB56UW3273E-7A
Text: HB56UW3273 Series 33554432-word x 72-bit High Density Dynamic RAM Module ADE-203-653 Z Preliminary Rev. 0.0 Sep. 6, 1996 Description The HB56UW3273 Series belongs to 8-byte DIMM (Dual in-line Memory Module) family , and has been developed an optimized main memory solution for 4 and 8-byte processor applications. The
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HB56UW3273
33554432-word
72-bit
ADE-203-653
HB56UW3273E
64-Mbit
HM5165405ATT)
16-bit
74LVT16244)
74LVT16244
HB56UW3273E-6A
HB56UW3273E-7A
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74LVT16244
Abstract: HB56UW3273E-6A HB56UW3273E-7A HB56UW3273EJ-6A HB56UW3273EJ-7A Hitachi DSA00244 Nippon capacitors
Text: HB56UW3273E Series HB56UW3273EJ Series 33554432-word x 72-bit High Density Dynamic RAM Module ADE-203-653A Z Rev. 1.0 Jun. 18, 1997 Description The HB56UW3273E Series, HB56UW3273EJ Series belong to 8-byte DIMM (Dual in-line Memory Module) family , and have been developed an optimized main memory solution for 4 and 8-byte processor
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HB56UW3273E
HB56UW3273EJ
33554432-word
72-bit
ADE-203-653A
64Mbit
HM5165405ATT)
74LVT16244
HB56UW3273E-6A
HB56UW3273E-7A
HB56UW3273EJ-6A
HB56UW3273EJ-7A
Hitachi DSA00244
Nippon capacitors
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2620 dynamic ram
Abstract: 74LVT16244 HB56UW3273E-6A HB56UW3273E-7A HB56UW3273EJ-6A HB56UW3273EJ-7A Hitachi DSA00200 Nippon capacitors
Text: HB56UW3273E Series HB56UW3273EJ Series 33554432-word x 72-bit High Density Dynamic RAM Module ADE-203-653A Z Rev. 1.0 Jun. 18, 1997 Description The HB56UW3273E Series, HB56UW3273EJ Series belong to 8-byte DIMM (Dual in-line Memory Module) family , and have been developed an optimized main memory solution for 4 and 8-byte processor
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HB56UW3273E
HB56UW3273EJ
33554432-word
72-bit
ADE-203-653A
64Mbit
HM5165405ATT)
2620 dynamic ram
74LVT16244
HB56UW3273E-6A
HB56UW3273E-7A
HB56UW3273EJ-6A
HB56UW3273EJ-7A
Hitachi DSA00200
Nippon capacitors
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TRIAC ACS 12
Abstract: CDT3345-07
Text: 其朋半導體股份有限公司 Chip Design Technology Inc. 90 年 8 月 3 日 CDT3345-07 P. 1 四段輸入倒時定時器 IC • IC 打線腳座配置 2 LED ■ OSCO 14 CDT3345-07 4 BZ2 1670 X 1790 M 5 CDS TEST1 TEST2 VSS 6 ZC 13 OUT1 12 IC 底座接 VDD
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CDT3345-07
34507A
CDT3345-07K3)
CDT-3345
CDT3345-07
1N4007
TRIAC ACS 12
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Untitled
Abstract: No abstract text available
Text: 其朋半導體股份有限公司 Chip Design Technology Inc. 90 年 8 月 3 日 CDT3345-03 P. 1 四段輸入倒時定時器 IC • IC 打線腳座配置 2 LED ■ OSCO 14 CDT3345-03 4 BZ2 1670 X 1790 M 5 CDS TEST1 TEST2 VSS 6 ZC 13 OUT1 12 IC 底座接 VDD
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CDT3345-03
34503A
CDT3345-03K3)
CDT-3345
CDT3345-07
1N4007
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CQX 86
Abstract: U832 write-verify RaR8 81 u218 A09T
Text: DM512K64DTE/DM512K72DTE Multibank Burst EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache • Fast 4Mbyte DRAM Array for 30ns Access to Any New Page
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DM512K64DTE/DM512K72DTE
512Kb
64/512Kb
168BD5-TR
DM512K72DTE
72-bit
CQX 86
U832
write-verify
RaR8 81
u218
A09T
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Untitled
Abstract: No abstract text available
Text: User’s Manual, V1.0, July 2004 TC1100 Peripheral Units 32-Bit Single-Chip Microcontroller Microcontrollers N e v e r s t o p t h i n k i n g . Edition 2004-07 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2004.
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TC1100
32-Bit
D-81541
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M5M418165
Abstract: NEC 2581 CSP-48 AS7C33256PFS18A tc5588 KM6865 FLASH CROSS 256K16 TR-81090 la 4620
Text: Product Guide SRAM 64K 256K 512K All densities in bits 1M 2M 1.65V-3.6V Low-power Asynchronous IntelliwattT M 32Kx8 5V Fast Asynchronous 4M 8M 16M 512K×8 1M×8 2M×8 256K×16 3.3V Fast Asynchronous 8K×8 32K×8 32K×16 32K×16 128K×8 512K×8 64K×16
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Q4--2000
1Mx18
512Kx36
SE-597
x2255
M5M418165
NEC 2581
CSP-48
AS7C33256PFS18A
tc5588
KM6865
FLASH CROSS
256K16
TR-81090
la 4620
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AS4C4256
Abstract: MAS 10 RCD MT42C4256 mt42c4256 -8
Text: AS42C4256 883C 256K x 4 VRAM AUSTIN SEMICONDUCTOR, INC. VRAM 256K x 4 DRAM WITH 512 x 4 SAM AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View MIL-STD-883 28-Pin DIP (400 MIL) FEATURES Industry standard pinout, timing and functions
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AS42C4256
MIL-STD-883
28-Pin
512-cycle
275mW
DS000016
AS4C4256
MAS 10 RCD
MT42C4256
mt42c4256 -8
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MT42C4256
Abstract: No abstract text available
Text: MT42C4256 883C 256K x 4 VRAM AUSTIN SEMICONDUCTOR, INC. Limited Supply - Consult Factory 256K x 4 DRAM WITH 512 x 4 SAM VRAM AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SMD 5962-89497 • MIL-STD-883 28-Pin DIP (400 MIL) FEATURES •
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MT42C4256
MIL-STD-883
28-Pin
DS000016
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Untitled
Abstract: No abstract text available
Text: 其朋半導體股份有限公司 Chip Design Technology Inc. 90 年 3 月 21 日 CDT3345-09 P. 1 四段輸入倒時定時器 IC • IC 打線腳座配置 2 LED 4 BZ2 1670 X 1790 M ZC 13 OUT1 12 IC 底座接 VDD VSS 6 OUT2 11 K1 7 K2 8 ■ 8 PIN DIP 包裝
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CDT3345-09
34509A
334509B345-09
CDT-3345-09
CDT-3345
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T2D 17 69
Abstract: No abstract text available
Text: PRELIMINARY MT2D T 132(X), MT4D(T)232(X) 1 MEG, 2 MEG x 32 DRAM MODULES I^ IIC R O N 1 MEG, 2 MEG x 32 DRAM MODULE 4, 8 MEGABYTE, 5V, FAST PAGE OR EDO PAGE MODE FEATURES (DD-11) (DD-9) (DD-10) (DD-12) • T im in g 60n s access 70ns access • C o m p o n en ts
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72-pin,
024-cy
T2D 17 69
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MICRON MT2D T 132(X), MT4D(T)232(X) 1 MEG, 2 MEG x 32 DRAM MODULES I DRAM 1 MEG, 2 MEG x 32 R J I A n i •■ C IV IU U U L E Z 4, 8 MEGABYTE, 5V, FAST PAGE OR EDO p a g e m o d e FEATURES 72-Pin SIMM (DD-11) 1 Meg x 32 - TSOP version (shown)
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72-Pin
DD-11)
DD-10)
DD-12)
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irf 3110
Abstract: IRF3503 irf350 IRf 334 IRf 92 0151 irf352 C055
Text: MOTOROLA SEM ICONDUCTOR IRF350 IRF351 IRF352 TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR These TMOS P o w e r FETs are d e sig n e d fo r h ig h voltage, high speed p o w e r s w itc h in g a p p lica tio n s such as sw itch in g regulators,
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IRF350
IRF351
IRF352
IRF350,
irf 3110
IRF3503
IRf 334
IRf 92 0151
irf352
C055
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x640
Abstract: No abstract text available
Text: Metallized Polyester AC Capacitors Types X637, X640 Formerly TRW-40, TRW-41 and TRW-42 series • • • • • • Applications Motor Run Speed Control Noise Filtering 220 To 460 Vac 50/60 Hz To 25.0 MFD These AC capacitors are constructed from metallized polyester film and otter small
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TRW-40,
TRW-41
TRW-42
Fl39is-*
x640
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IC CD 4440 pin diagram
Abstract: GZ150 MCM4L4400-70 MCM44400N70 MCM44400N-60
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM44400 MCM4L4400 Advance Information 1M x 4 CMOS Dynamic RAM Fast Page Mode The MCM44400 is a 0.8n CMOS high-speed dynamic random access memory. It is organized as 1,048,576 four-bit words and fabricated with CMOS silicon-gate
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MCM44400
MCM4L4400
MOTOD010
4L4400
MCM44400N60
MCM44400N70
MCM44400N80
MCM4L4400N60
IC CD 4440 pin diagram
GZ150
MCM4L4400-70
MCM44400N-60
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM32200 MCM32L200 2M x 32 Bit Dynamic Random Access Memory Module T h e M C M 3 2 2 0 0 S ¡s a 64M , d y n a m ic ra n d o m acc e s s m e m o ry D R A M m odule o rg a n ize d as 2 ,0 9 7 .1 5 2 x 32 bits. T h e m odule is a 72-le a d d o u b le s id ed s in g le -in -lin e
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72-le
32L200
MCM32200S80
MCM32200S10
MCM32L200S80
MCM32L200S10
MCM32200SG80
MCM32200SG10
MCM32L200SG80
MCM32L200SG10
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mt4lc4m4e8dj-6
Abstract: No abstract text available
Text: 4 MEG x 4 EDO DRAM V U C Z R O N D R A M L /n # 4 IV I MT4LC4M4E8, MT4C4M4E8 MT4LC4M4E9, MT4C4M4E9 FEATURES PIN ASSIGNMENT (Top View OPTIONS 24/26-Pin SOJ (DA-2) V cc q 1 • DQ1 [ 2 DQ2 d 3 WE# : 4 RAS# : 5 NC/A11 c 6 A10 A0 A1 A2 A3 V cc c q : L q [ B
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24/26-Pin
mt4lc4m4e8dj-6
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Untitled
Abstract: No abstract text available
Text: February 1996 Edition 3.0 PRODUCT PROFILE SHEET FUJITSU = MB814400D-60/-70 CMOS 1 M X 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 1,048,576 x 4 bit Fast Page Mode Dynamic RAM The Fujitsu MB814400D is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304 memory cells accessible in 4-bit increments. The MB814400D features a
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MB814400D-60/-70
MB814400D
024-bits
374175b
MB814400D-60
MB8144000-70
26-LEAD
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Untitled
Abstract: No abstract text available
Text: ^C A P A C I T O R S M etallized Polyester Capacitors Flame Retardant W rap A n d Fill Case • M o to r Run Physical Characteristics • S p eed C o n tro l C o n stru ction : • N o ise F ilte rin g Non-inductive w ound metallized poly ester. • 5 0 /6 0 H z
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