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Catalog Datasheet	MFG & Type	Document Tags	PDF
A1t smd Abstract: 3CAQ smd code A1t Text: CYM1622 CYPRESS SEMICONDUCTOR 64K x 16 Static RAM Module F eatures F unctional D escription • High-density 1-megabit SRAM module T he CYM 1622 is a very high p erform ance 1-m egabit static R A M m odule organized as64K w ordsby 16 bits. T he m odule is con	OCR Scan	CYM1622 1622H 1622PV --25C --30C --35C A1t smd 3CAQ smd code A1t	PDF
1620H Abstract: 3545C Text: CYM1620 p y p p p c c SEMICONDUCTOR 64K X 16 Static RAM Module Features Functional Description • High-density 1-megabit SRAM module The C Y M 1620 is a very high perform ance 1-m egabit static R A M m odule organized as64K w ords by 16 bits. T he m odule is con	OCR Scan	CYM1620 40-pin, 1620PD --25C 1620H --30C --35MB 3545C	PDF
Untitled Abstract: No abstract text available Text: 32Kx 32 EEPROM Module mosaic PUMA67E1001/A-90/12 Issue4.0: February 1996 semiconductor, inc. Description ThePUMA67E1001/AisalMbitCMOS EEPROM module in a JEDEC 68 pin J leaded Ceramic Surface Mount Substrate. Accesstimes of90and 120 ns are available.Theoutputwidth is	OCR Scan	PUMA67E1001/A-90/12 ThePUMA67E1001/AisalMbitCMOS of90and MIL-STD-883orD0 MIL-STD-883 32Kx32 as64Kx 16and 128Kx8 PUMA67	PDF
32KX8 Abstract: HD03 ZL53 Text: CYM1620 CYPRESS SEMICONDUCTOR 64K x 16 Static RAM Module Features Functional Description • High-density 1-megabit SRAM module • High-speed CM OS SRAMs — Access tim e o f 20 ns The CYM1620 is a veiy high performance 1-megabit static RAM module organized	OCR Scan	CYM1620 40-pin, 16bits. Outg-15 Ins-15 CYM1620PD-20C CYM1620PDâ CYM1620HDâ CYM1620PD-30C 32KX8 HD03 ZL53	PDF
Untitled Abstract: No abstract text available Text: MXIC 51 2K -B ITI64K x 8 ] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM FEATURES • • • • • • • M X26C 512A 64K x 8 organization +5V operating power supply +12.75V program/erase voltage Electric erase instead of UV light erase Fast access time: 70/90/100/120/150 ns	OCR Scan	ITI64K 100juA MX26C512A 512K-bit, as64K PM0455 X26C512A	PDF
5225M Abstract: SOJ28 Text: LH52253 FEATURES • Fast Access Times: 20/25/35 ns • Low-Power Standby when Deselected • TTL Compatible I/O • 5 V ± 10% Supply • Fully-Static Operation C M O S 64K x 4 Static R A M The LH52253 offers an Output Enable G for use in managing the Data Bus. Bus contention _during Write	OCR Scan	LH52253 28-Pin, 300-mil LH52253 256K-bit as64Kx LH52253. 5225M SOJ28	PDF
sRAM 2116 Abstract: 2116 ram memory sram Text: Q S86444, Ô Q S86449 High-Speed CMOS 64Kx4 SRAM with Separate I/O Q S86444 Q S86449 ADVANCE INFORM ATIO N F E A TU R E S /B E N E FIT S • • • • • High Speed Access and Cycle times 15ns/20ns/25ns Commercial 20ns/25ns/35ns Military TTL compatible I/O	OCR Scan	QS86444, QS86449 64Kx4 QS86444 QS86449 15ns/20ns/25ns 20ns/25ns/35ns 28-pin MIL-STD-883 sRAM 2116 2116 ram memory sram	PDF